Patent application number | Description | Published |
20120061680 | GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heat dissipation substrate (that is, a thermal conductive substrate); a GaN-based multi-layer arranged on the heat dissipation substrate and having N-face polarity; and a heterostructure field effect transistor (HFET) or a Schottky electrode arranged on the GaN-based multi-layer. The HFET device may include a gate having a double recess structure. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used. | 03-15-2012 |
20120061727 | GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heterostructure field effect transistor (HFET) or a Schottky diode, arranged on a heat dissipation substrate. The HFET device may include a GaN-based multi-layer having a recess region; a gate arranged in the recess region; and a source and a drain that are arranged on portions of the GaN-based multi-layer at two opposite sides of the gate (or the recess region). The gate, the source, and the drain may be attached to the heat dissipation substrate. The recess region may have a double recess structure. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used. | 03-15-2012 |
20120074424 | GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a conductive heat dissipation substrate (that is, a thermal conductive substrate); an GaN-based multi-layer arranged on the heat dissipation substrate; and a Schottky electrode arranged on the GaN-based multi-layer. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used. | 03-29-2012 |
20120280233 | NITRIDE-BASED HETEROSTRUCTURE FIELD EFFECT TRANSISTOR HAVING HIGH EFFICIENCY - A high efficiency heterostructure field effect transistor (HFET) capable of suppressing a leakage current and enhancing a current density by lowering a barrier between an electrode and a semiconductor layer is provided. The high efficiency HFET may include a substrate, a semi-insulating gallium nitride (GaN) layer formed on the substrate, an aluminum gallium nitride (AlGaN) layer formed on the GaN layer, and a silicon carbide (Si | 11-08-2012 |
20130009164 | POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is a power device. The power device may include a two-dimensional electron gas (2-DEG) layer in a portion corresponding to a gate electrode pattern since a second nitride layer is further formed on a lower portion of the gate electrode pattern after a first nitride layer is formed and thus, may be capable of performing a normally-OFF operation. Accordingly, the power device may adjust generation of the 2-DEG layer based on a voltage of a gate, and may reduce power consumption. The power device may regrow only the portion corresponding to the gate electrode pattern or may etch a portion excluding the portion corresponding to the gate electrode pattern and thus, a recess process may be omissible, a reproducibility of the power device may be secured, and a manufacturing process may be simplified. | 01-10-2013 |
20130015463 | NITRIDE-BASED SEMICONDUCTOR DEVICE HAVING EXCELLENT STABILITYAANM LEE; Jae HoonAACI Suwon-siAACO KRAAGP LEE; Jae Hoon Suwon-si KR - A nitride-based semiconductor device is provided. The nitride-based semiconductor device may include an aluminum silicon carbide (AlSi | 01-17-2013 |
20130015465 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICEAANM LEE; Jae-hoonAACI Suwon-siAACO KRAAGP LEE; Jae-hoon Suwon-si KR - A nitride light-emitting device includes an N-type nitride semiconductor layer; an active layer disposed on the N-type nitride semiconductor layer; and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor includes a heterojunction structure having a GaN layer and an N-type Al | 01-17-2013 |
20130017657 | METHOD OF MANUFACTURING POWER DEVICEAANM LEE; Jae HoonAACI Suwon-siAACO KRAAGP LEE; Jae Hoon Suwon-si KR - A power device manufacturing method is provided. The power device manufacturing method may perform patterning of regions on which a source electrode and a drain electrode are to be formed, may regrow n | 01-17-2013 |
20130032821 | SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING THE SAME - A Schottky barrier diode (SBD) is provided, which improves electrical characteristics and optical characteristics by securing high crystallinity by including an n-gallium nitride (GaN) layer and a GaN layer which are doped with aluminum (Al). In addition, by providing a p-GaN layer on the Al-doped GaN layer, a depletion layer may be formed when a reverse current is applied, thereby reducing a leakage current. The SBD may be manufactured by etching a part of the Al-doped GaN layer and growing a p-GaN layer from the etched part of the Al-doped GaN layer. Therefore, a thin film crystal is not damaged, thereby increasing reliability. Also, since dedicated processes for ion implantation and thermal processing are not necessary, simplified process and reduced cost may be achieved. | 02-07-2013 |
20130034939 | METHOD OF MANUFACTURING POWER DEVICE - A method of manufacturing a power device includes forming a first drift region on a substrate. A trench is formed by patterning the first drift region. A second drift region is formed by growing n-gallium nitride (GaN) in the trench, and alternately disposing the first drift region and the second drift region. A source electrode contact layer is formed on the second drift region. A source electrode and a gate electrode are formed on the source electrode contact layer. A drain electrode is formed on one side of the substrate which is an opposite side of the first drift region. | 02-07-2013 |
20130168688 | NITRIDE BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A nitride based semiconductor device includes a first metallic junction layer, a Schottky junction layer on the first metallic junction layer, a first group III nitride semiconductor layer on the Schottky junction layer, a first insulating pattern layer on the first group III nitride semiconductor layer, the first insulating layer pattern including curved protrusions, a second group III nitride semiconductor layer laterally grown on the first group III nitride semiconductor layer, a first type group III nitride semiconductor layer on the second group III nitride semiconductor layer, the first type group III nitride semiconductor layer being simultaneously doped with aluminum (Al) and silicon (Si), an ohmic junction layer formed on the first type group III nitride semiconductor layer, a second metallic junction layer on the ohmic junction layer, and a metallic supporting substrate on the second metallic junction layer. | 07-04-2013 |
20130168689 | NITRIDE BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - With the formation of a Si | 07-04-2013 |
20130168698 | POWER DEVICES AND METHOD FOR MANUFACTURING THE SAME - A power device includes a substrate, a silicon carbide (Si | 07-04-2013 |
20140021481 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A nitride-based semiconductor device includes a buffer layer on a substrate, a nitride-based semiconductor layer on the buffer layer, at least one ion implanted layer within the nitride-based semiconductor layer, and a channel layer on the nitride-based semiconductor layer. | 01-23-2014 |
20140021488 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR DEVICE - In a nitride-based semiconductor device, an undoped gallium nitride (GaN) layer is formed on an aluminum gallium nitride (AlGaN) layer, and a silicon carbon nitride (Si | 01-23-2014 |
20140021512 | METHODS OF MANUFACTURING THE GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICES - Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heterostructure field effect transistor (HFET) or a Schottky diode, arranged on a heat dissipation substrate. The HFET device may include a GaN-based multi-layer having a recess region; a gate arranged in the recess region; and a source and a drain that are arranged on portions of the GaN-based multi-layer at two opposite sides of the gate (or the recess region). The gate, the source, and the drain may be attached to the heat dissipation substrate. The recess region may have a double recess structure. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used. | 01-23-2014 |
20140087529 | POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is a power device. The power device may include a two-dimensional electron gas (2-DEG) layer in a portion corresponding to a gate electrode pattern since a second nitride layer is further formed on a lower portion of the gate electrode pattern after a first nitride layer is formed and thus, may be capable of performing a normally-OFF operation. Accordingly, the power device may adjust generation of the 2-DEG layer based on a voltage of a gate, and may reduce power consumption. The power device may regrow only the portion corresponding to the gate electrode pattern or may etch a portion excluding the portion corresponding to the gate electrode pattern and thus, a recess process may be omissible, a reproducibility of the power device may be secured, and a manufacturing process may be simplified. | 03-27-2014 |
20140123111 | AUTOMATIC TESTING APPARATUS FOR EMBEDDED SOFTWARE AND AUTOMATIC TESTING METHOD THEREOF - An automatic test apparatus for embedded software and an automatic testing method thereof, the automatic testing apparatus for embedded software, includes an output detector which collects interface status information in accordance with data transmission/reception from at least one of first and second electronic devices respectively loaded with first and second embedded software and exchanging data therebetween, and extracts a keyword from the collected interface status information, a scenario composer which uses identification information about the first and second embedded software and the extracted keyword, and composes a scenario corresponding to a predetermined event status and a control command generator which generates a control command to reproduce the event status based on the composed scenario. Thus, it is possible to previously detect unpredictable and predictable problems that may occur in interaction between the plurality of embedded software, interface operation to transmit and receive data, etc., and reproduce them. | 05-01-2014 |
20140167113 | GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heat dissipation substrate (that is, a thermal conductive substrate); a GaN-based multi-layer arranged on the heat dissipation substrate and having N-face polarity; and a heterostructure field effect transistor (HFET) or a Schottky electrode arranged on the GaN-based multi-layer. The HFET device may include a gate having a double recess structure. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used. | 06-19-2014 |
20140252368 | HIGH-ELECTRON-MOBILITY TRANSISTOR - A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern. | 09-11-2014 |
20140252369 | NITRIDE-BASED SEMICONDUCTOR DEVICE - A nitride-based semiconductor device including a substrate; a GaN-containing layer on the substrate; a nitride-containing layer on the GaN layer; a channel blocking layer on the nitride-containing layer, the channel blocking layer including a nitride-based semiconductor; a gate insulation layer on the channel blocking layer; and a gate electrode on the gate insulation layer. | 09-11-2014 |
20140253241 | HIGH ELECTRON MOBILITY TRANSISTOR DEVICE - A high electron mobility transistor (HEMT) device includes a buffer layer on a substrate; a face-inversion layer on a part of the buffer layer; a plurality of semiconductor layers on the face-inversion layer and on the buffer layer; and a source electrode, a drain electrode, and a gate electrode on the plurality of semiconductor layers. The HMT device has a stable, normally Off characteristic. | 09-11-2014 |
20140312990 | COMPOSITE ELECTRONIC COMPONENT, BOARD HAVING THE SAME MOUNTED THEREON, AND POWER SMOOTHING UNIT COMPRISING THE SAME - A composite electronic component may include: an input terminal receiving power which has been converted by a power management unit; a power smoothing unit including a capacitor including a ceramic body in which a plurality of dielectric layers and internal electrodes are stacked such that the internal electrodes are disposed to face each other with the dielectric layer interposed therebetween and an inductor including a magnetic body including a coil part and a magnet, and smoothing power; and an output terminal supplying the smoothed power. The inductor may suppress an alternating current (AC) component of supplied power and the capacitor may reduce ripples in the supplied power. | 10-23-2014 |
20140313785 | COMPOSITE ELECTRONIC COMPONENT, BOARD HAVING THE SAME MOUNTED THEREON AND POWER STABILIZING UNIT INCLUDING THE SAME - A composite electronic component includes a first power stablizing unit and a second power stabilizing unit. The first power stabilizing unit includes a first input terminal receiving first power supplied from a battery, stabilizing the first power, and supplying the stabilized first power to a power managing unit. The second power stabilizing unit includes a second input terminal receiving second power converted by the power managing unit and an output terminal stabilizing the second power and supplying the stabilized second power as driving power. The first and second power stabilizing units include a capacitor and an inductor to stabilize the powers. The inductor is configured to suppress an alternating current (AC) component of the received power. The capacitor is configured to decrease ripple of the received power. | 10-23-2014 |
20140327049 | METHODS OF MANUFACTURING THE GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICES - Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heterostructure field effect transistor (HFET) or a Schottky diode, arranged on a heat dissipation substrate. The HFET device may include a GaN-based multi-layer having a recess region; a gate arranged in the recess region; and a source and a drain that are arranged on portions of the GaN-based multi-layer at two opposite sides of the gate (or the recess region). The gate, the source, and the drain may be attached to the heat dissipation substrate. The recess region may have a double recess structure. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used. | 11-06-2014 |
20150021616 | NITRIDE-BASED SEMICONDUCTOR DEVICES - A nitride-based semiconductor device includes a barrier structure on a substrate, a nitride semiconductor layer on the barrier structure, and a source electrode, a drain electrode, and a gate electrode on the nitride semiconductor layer to be separated from each other. The barrier structure includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity on the first semiconductor layer, a third semiconductor layer having the first conductivity on the second semiconductor layer, and a fourth semiconductor layer having the second conductivity on the third semiconductor layer. A two-dimensional electrode gas (2DEG) channel is formed in the nitride semiconductor layer. | 01-22-2015 |
20150021658 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes an emitter electrode and a first field plate disposed on one surface of a substrate and spaced apart from each other, a collector electrode disposed on the other surface of the substrate, a trench gate disposed in the substrate, a field diffusion junction disposed in the substrate, and a first contact connecting the trench gate and the first field plate. The first field plate has a first part extending toward the emitter electrode with respect to the first contact and having a first width, and a second part extending toward the field diffusion junction with respect to the first contact and having a second width. The second width is greater than the first width. | 01-22-2015 |