Patent application number | Description | Published |
20090317191 | FISH WAY OF TURBINE STRUCTURE AND GATE STRUCTURE FOR TIDAL POWER PLANT - Fishways of turbine structures and gate structures for environmentally-friendly tidal power plant through which fish can pass through are provided. The fishway comprises of sea side fishways and lake side fishways to allow fish to move between the sea side and the lake side by forming inside stuffing space filled with seawater for shorter construction period and concrete reduced placing quantity in a certain section of the vertical middle walls installed on the base of which the bottom part is on the marine rock to form blocks of turbine structures and gate structures in a tidal power plant, and seawater on the sea side and the lake side is flown through the front and rear of such inside stuffing space. | 12-24-2009 |
20100014920 | TURBINE STRUCTURE AND GATE STRUCTURE HAVING FLEXIBLE JOINT AND INSIDE STUFFING FOR TIDAL POWER PLANT - A turbine structure and a gate structure for tidal power plants of the present invention features that middle walls which can be installed as two units of one block are installed with an inside stuffing and a flexible joint so as to absorb and reduce the internal and external effects of the buoyancy and mechanical vibration of the turbine structures and the gate structures on the tidal power plants, save construction costs by shortened construction period and reduced concrete placing quantity, and prevent the cracks of concrete and the generation of hydration heat. The turbine structure having the flexible joint and the inside stuffing for tidal power plants comprises a base which bottom part is on the submarine rock so that a turbine structure between lake and sea which is connected with a gate structure by the medium of a connection structure can be installed as two units of one block; vertical middle walls which are formed on the base, the top of which is closed by a concrete structure wherein a draft tube and a discharge tube by which seawater can move inside; turbine generators which are arranged between the middle walls through the draft tubes; an inside stuffing space which is formed in the middle walls on one side installed in a predetermined distance on the base of the gate structure and filled with seawater; and a flexible joint of connecting the middle walls on the other side. | 01-21-2010 |
20100285622 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance. | 11-11-2010 |
20120190142 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance. | 07-26-2012 |
Patent application number | Description | Published |
20080204626 | Light emitting diodes and display apparatuses using the same - In a light emitting diode, a first semiconductor layer supplies electrons, and a second semiconductor layer supplies holes. An active layer is formed between the first and second semiconductor layers. The active layer receives electrons and holes, and emits light in response to coupling between the electrons and the holes. A first reflective layer is formed on a bottom portion of the first semiconductor layer, and a second reflective layer is formed on a top portion of the second semiconductor layer. The light emitted from the active layer exits toward a side of the active layer. | 08-28-2008 |
20080274575 | Vertical semiconductor light-emitting device and method of manufacturing the same - Provided is a vertical semiconductor light-emitting device and a method of manufacturing the same. The method may include sequentially forming a lower clad layer, an active layer, and an upper clad layer on a substrate to form a semiconductor layer and forming first electrode layers on the upper clad layer. A metal support layer may be formed on each of the first electrode layers and a trench may be formed between the first electrode layers. The substrate may be removed and a second electrode layer may be formed on the lower clad layer. | 11-06-2008 |
20090072196 | RED PHOSPHOR AND METHOD OF PREPARING THE SAME - Provided is a red phosphor which is excellent in emission efficiency by a long wavelength UV excitation source and has a fine and uniform particle size. The red phosphor includes a compound represented by (Li.sub.(2−z)−xM.sub.x)(AO.sub.4).sub.y:Eu.sub.z,Sm.sub.q and a flux wherein M is K, Mg, Na, Ca, Sr, or Ba, A is Mo or W, 0.ltoreq.x.ltoreq.2, 0.5.ltoreq.y.ltoreq.5, 0.01.ltoreq.z.ltoreq.1.5, and 0.001.ltoreq.q.ltoreq.1.0. Provided is also a method of preparing the red phosphor. | 03-19-2009 |
20090278154 | Led module and method of manufacturing the same - Provided are a light emitting diode (LED) module and a method of manufacturing the same. The LED module may include a package housing including an inner space, a light-emitting chip in the inner space of the package housing, a phosphor layer including a fluorescent material and converting light emitted from the light-emitting chip to light having a longer wavelength than that of the light emitted from the light-emitting chip. The concentration of the fluorescent material of the phosphor layer may be inhomogeneous. The method of manufacturing the LED module may include providing or forming a package housing having an inner space and including a light-emitting chip in the inner space, measuring a radiation pattern of light emitted from the light-emitting chip, and forming a phosphor layer including a fluorescent material on the light-emitting chip and having characteristics that may be determined according to the radiation pattern. | 11-12-2009 |
20100166983 | OMNI-DIRECTIONAL REFLECTOR AND LIGHT EMITTING DIODE ADOPTING THE SAME - An omni-directional reflector having a transparent conductive low-index layer formed of conductive nanorods and a light emitting diode utilizing the omni-directional reflector are provided. The omni-directional reflector includes: a transparent conductive low-index layer formed of conductive nanorods; and a reflective layer formed of a metal. | 07-01-2010 |
20110198652 | LOW RESISTANCE ELECTRODE AND COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME - A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process. | 08-18-2011 |