Patent application number | Description | Published |
20110233050 | MAGNETIC LENSING TO IMPROVE DEPOSITION UNIFORMITY IN A PHYSICAL VAPOR DEPOSITION (PVD) PROCESS - A physical vapor deposition (PVD) system includes a chamber and a plurality of electromagnetic coils arranged around the chamber. First and second annular bands of permanent magnets are arranged around the chamber with poles oriented perpendicular to a magnetic field imposed by the electromagnetic coils. Each of the permanent magnets in the first annular band is arranged with poles having a first polarity closest to a central axis of the chamber. Each of the permanent magnets in the second annular band is arranged anti-parallel with respect to the permanent magnets in the first annular band. | 09-29-2011 |
20120070589 | CREATION OF MAGNETIC FIELD (VECTOR POTENTIAL) WELL FOR IMPROVED PLASMA DEPOSITION AND RESPUTTERING UNIFORMITY - A physical vapor deposition (PVD) system includes a chamber and a target arranged in a target region of the chamber. A pedestal has a surface for supporting a substrate and is arranged in a substrate region of the chamber. A transfer region is located between the target region and the substrate region. N coaxial coils are arranged in a first plane parallel to the surface of the pedestal and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. N currents flow in a first direction in the N coaxial coils, respectively, and M currents flow in a second direction in the M coaxial coils that is opposite to the first direction, respectively. | 03-22-2012 |
20120228125 | CREATION OF MAGNETIC FIELD (VECTOR POTENTIAL) WELL FOR IMPROVED PLASMA DEPOSITION AND RESPUTTERING UNIFORMITY - A physical vapor deposition (PVD) system includes N coaxial coils arranged in a first plane parallel to a substrate-supporting surface of a pedestal in a chamber of a PVD system and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. Plasma is created in the chamber. A magnetic field well is created above a substrate by supplying N currents to the N coaxial coils, respectively, and M currents to the M coaxial coils, respectively. The N currents flow in a first direction in the N coaxial coils and the M second currents flow in a second direction in the M coaxial coils that is opposite to the first direction. A recessed feature on the substrate arranged on the pedestal is filled with a metal-containing material by PVD using at least one operation with high density plasma having a fractional ionization of metal greater than 30%. | 09-13-2012 |
20130206725 | CREATION OF OFF-AXIS NULL MAGNETIC FIELD LOCUS FOR IMPROVED UNIFORMITY IN PLASMA DEPOSITION AND ETCHING - Disclosed are methods and associated apparatus for depositing layers of material on a substrate (e.g., a semiconductor substrate) using ionized physical vapor deposition (iPVD). Also disclosed are methods and associated apparatus for plasma etching (e.g., resputtering) layers of material on a semiconductor substrate. | 08-15-2013 |
20140127912 | PLASMA PROCESS ETCH-TO-DEPOSITION RATIO MODULATION VIA GROUND SURFACE DESIGN - Plasma deposition in which properties of a discharge plasma are controlled by modifying the grounding path of the plasma is potentially applicable in any plasma deposition environment, but finds particular use in ionized physical vapor deposition (iPVD) gapfill applications. Plasma flux ion energy and E/D ratio can be controlled by modifying the grounding path (grounding surface's location, shape and/or area). Control of plasma properties in this way can reduce or eliminate reliance on conventional costly and complicated RF systems for plasma control. For a high density plasma source, the ionization fraction and ion energy can be high enough that self-sputtering may occur even without any RF bias. And unlike RF induced sputtering, self-sputtering has narrow ion energy distribution, which provides better process controllability and larger process window for integration. | 05-08-2014 |
20150163860 | APPARATUS AND METHOD FOR UNIFORM IRRADIATION USING SECONDARY IRRADIANT ENERGY FROM A SINGLE LIGHT SOURCE - A technique and apparatus are provided for supplying substantially uniform radiant heat energy to a semiconductor wafer in a load lock or process chamber using a light source and a set of radially-symmetric reflectors. | 06-11-2015 |
20160056037 | METHOD TO TUNE TIOX STOICHIOMETRY USING ATOMIC LAYER DEPOSITED TI FILM TO MINIMIZE CONTACT RESISTANCE FOR TIOX/TI BASED MIS CONTACT SCHEME FOR CMOS - Methods of depositing and tuning deposition of sub-stoichiometric titanium oxide are provided. Methods involve depositing highly pure and conformal titanium on a substrate in a chamber by (i) exposing the substrate to titanium tetraiodide, (ii) purging the chamber, (iii) exposing the substrate to a plasma, (iv) purging the chamber, (v) repeating (i) through (iv), and treating the deposited titanium on the substrate to form sub-stoichiometric titanium oxide. Titanium oxide may also be deposited prior to depositing titanium on the substrate. Treatments include substrate exposure to an oxygen source and/or annealing the substrate. | 02-25-2016 |
20160056053 | METHOD AND APPARATUS TO DEPOSIT PURE TITANIUM THIN FILM AT LOW TEMPERATURE USING TITANIUM TETRAIODIDE PRECURSOR - Methods of depositing highly conformal and pure titanium films at low temperatures are provided. Methods involve exposing a substrate to titanium tetraiodide, purging the chamber, exposing the substrate to a plasma, purging the chamber, and repeating these operations. Titanium films are deposited at low temperatures less than about 450° C. | 02-25-2016 |