Patent application number | Description | Published |
20100302391 | Head-Separated Camera Device and Control Method Thereof - According to one embodiment, a camera control unit outputs serial data containing information for specifying a predetermined control target device to be controlled from among plural control target devices comprised in a camera head. The camera head identifies the control target device specified by the received serial data, and supplies the identified control target device with a select signal for an active state. | 12-02-2010 |
20110013037 | Head-Separated Camera Device - According to one embodiment, a head-separated camera device has an imaging unit, control unit configured to control the imaging unit and a connection unit configured to connect the imaging unit with the control unit, wherein the imaging unit comprises a sensor configured to capture an image, and a transmitter configured to transmit a video signal, a synchronization signal, and a clock signal, for recovering or reproducing the image captured by the sensor, and the control unit comprises detector configured to detect that the imaging unit is connected to the control unit if a preset value preset in the imaging unit is read via a control line, and a setting module configured to set a register setting in the sensor if the detector detects connection of the imaging unit. | 01-20-2011 |
20110013078 | HEAD-SEPARATED CAMERA DEVICE - According to one embodiment, a head-separated camera device includes an imaging unit, a control unit configured to control the imaging unit and a connection unit configured to connect the imaging unit and the control unit. The imaging unit includes a sensor configured to capture an image to provide a video signal, a superimposition module configured to superimpose, on serial data, the video signal, the synchronization signal, and the clock signal, the serial data serving to reproduce the image captured by the sensor, and a transmitter configured to transmit the serial data to the control unit. The control unit includes a receiver configured to receive the serial data and a separation module configured to separate the serial data received by the receiver, into the video signal, the synchronization signal, and the clock signal. | 01-20-2011 |
20110050877 | HEAD SEPARATED CAMERA APPARATUS - According to one embodiment, a head-separated device has an imaging unit, a control unit configured to control the imaging unit and a connection unit configured to connect the imaging unit with the control unit, wherein the imaging unit comprises sensor configured to capture an image, and a transmitter configured to transmit a video signal, a sync signal (HD, VD) and a clock signal to restore or to reproduce the image captured by the sensor, and the control unit comprises a determining module configured to determine whether a waveform of the video signal has a level that the video processor is processable, and a setting module configured to set the transmitter to perform enhancement correction to the video signal, if the determining module determines that the waveform of the video signal does not have the level that the video processor is processable. | 03-03-2011 |
20110122262 | METHOD AND APPARATUS FOR INFORMATION REPRODUCTION - According to one embodiment, a camera apparatus includes, an imaging unit which acquires videos, a cable which connects the imaging unit to a control unit, and the control unit which comprises an asynchronous FIFO memory and a signal processing module and controls the imaging unit, the control unit performing transmitting to the imaging unit a drive signal configured to control an image sensor included in the imaging unit, and receiving a video signal including a clock signal or a synchronous signal output from the image sensor and converting this signal into a video signal standardized via the signal processing module. | 05-26-2011 |
20120013755 | Head-Separated Camera Device and Control Method Thereof - According to one embodiment, a method for controlling a head-separated camera device in which a camera head and a camera control unit are connected to each other by a cable comprising a line that supplies the camera head with serial data from the camera control unit. The method comprises outputting, by the camera control unit, serial data containing information for specifying a predetermined control target device of a plurality of control target devices to be controlled, where the plurality of control target devices are implemented within the camera head. The method further comprises identifying, by the camera head, the predetermined control target device specified by the serial data received, and supplying the predetermined control target device with an active select signal. | 01-19-2012 |
20120293676 | HEAD-SEPARATED CAMERA DEVICE - According to one embodiment, a head-separated camera device includes an imaging unit, a control unit configured to control the imaging unit and a connection unit configured to connect the imaging unit and the control unit. The imaging unit includes a sensor configured to capture an image to provide a video signal, a superimposition module configured to superimpose, on serial data, the video signal, the synchronization signal, and the clock signal, the serial data serving to reproduce the image captured by the sensor, and a transmitter configured to transmit the serial data to the control unit. The control unit includes a receiver configured to receive the serial data and a separation module configured to separate the serial data received by the receiver, into the video signal, the synchronization signal, and the clock signal. | 11-22-2012 |
Patent application number | Description | Published |
20080296080 | Hydraulic Transaxle And Vehicle Comprising It - A hydraulic transaxle comprises a transaxle casing for supporting left and right axles, a pair of hydraulic motors disposed in the transaxle casing so as to drive the respective left and right axles, hydraulic ports provided in the transaxle casing so as to fluidly connect the pair of hydraulic motors in parallel to a common hydraulic pump, and a system for restricting or canceling differential rotation of the pair of hydraulic motors. | 12-04-2008 |
20090047151 | Hydraulic Steering Transaxle And Hydraulic Driving Vehicle - A fluid passage member includes a pump mounting surface onto which a hydraulic pump having a rotary axis is mounted; first and second kidney ports opened at the pump mounting surface; a first fluid extraction port outwardly opened and connected to the first kidney port; a motor mounting surface onto which a hydraulic motor having a rotary axis is mounted so that the rotary axis of the hydraulic motor is parallel to the rotary axis of the hydraulic pump; third and fourth kidney ports opened at the motor mounting surface; and a second fluid extraction port outwardly opened and connected to the third kidney port. | 02-19-2009 |
20090145124 | Hydraulic Transaxle - A hydraulic transaxle comprises: a housing having a fluid sump therein, the housing including mutually joined housing parts; a pair of first wheels disposed at one of front and rear portions of the vehicle; an axle disposed in the housing; a center section disposed in the housing, the center section being formed therein with a pair of fluid ducts; a hydraulic pump disposed in the housing, fitted to the center section, and communicating with the fluid ducts; and a hydraulic motor disposed in the housing, fitted to the center section, and communicating with the fluid ducts so as to be fluidly connected to the hydraulic pump. The hydraulic motor includes a cylindrical motor shaft relatively rotatably and coaxially penetrated by the axle and drivingly connected to the axle. | 06-11-2009 |
20090194360 | Multi-Wheel Vehicle - A vehicle comprises a steering operation device, a pair of running-driving wheels, which differentially drive when the steering operation device is manipulated, a pair of steerable running wheels interlocking with the steering operation device, and a steering mechanism interposed between the steering operation device and the pair of running-driving wheels. The steering mechanism includes a pair of drive gears interlocking with the steering operation device and a pair of follower gears interlocking with the respective steerable running wheels. The drive gears mesh with the respective follower gears so as to control lateral turning of the respective steerable running wheels. A gear radius of the drive gear may be greater than that of the follower gear meshing with it. A gear ratio between the mutually meshing drive and follower gears may be variable. The lateral turning centers of both the steerable running wheels may coincide with each other, and further coincide with a lateral turning center of the vehicle body caused by differential rotation of the running-driving wheels. | 08-06-2009 |
Patent application number | Description | Published |
20090127564 | GaN Substrate Manufacturing Method, GaN Substrate, and Semiconductor Device - A GaN substrate manufacturing method characterized in including a step of processing the surface of a substrate composed of a GaN single crystal into a concavely spherical form, based on differences in orientation of the crystallographic axis across the substrate surface. Processing the GaN substrate surface into a concavely spherical form reduces, in the post-process GaN substrate surface, differences in orientation of the crystallographic axis with respect to a normal. Furthermore, employing to manufacture semiconductor devices a GaN substrate in which differences in orientation of the crystallographic axis have been reduced makes it possible to uniformize in device characteristics a plurality of semiconductor devices fabricated from a single GaN substrate, which contributes to improving yields in manufacturing the semiconductor devices. | 05-21-2009 |
20090273060 | GROUP III NITRIDE CRYSTAL AND METHOD FOR SURFACE TREATMENT THEREOF, GROUP III NITRIDE STACK AND MANUFACTURING METHOD THEREOF, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method for surface treatment of a group III nitride crystal includes the steps of lapping a surface of a group III nitride crystal using a hard abrasive grain with a Mohs hardness higher than 7, and abrasive-grain-free polishing the lapped surface of the group III nitride crystal using a polishing solution without containing abrasive grain, and the polishing solution without containing abrasive grain has a pH of not less than 1 and not more than 6, or not less than 8.5 and not more than 14. Accordingly, the method for surface treatment of a group III nitride crystal can be provided according to which hard abrasive grains remaining at the lapped crystal can be removed to reduce impurities at the crystal surface. | 11-05-2009 |
20100013058 | Semiconductor Wafer and Semiconductor Wafer Inspection Method - Affords semiconductor wafers that achieve uniformization of semiconductor films. In a semiconductor wafer ( | 01-21-2010 |
20110133207 | GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate ( | 06-09-2011 |
20110133209 | GaN SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A GaN substrate on which an epitaxially grown layer of good quality can be formed is obtained. A GaN substrate as a group III nitride substrate has a surface in which the number of chlorine atoms per square centimeter of the surface is not more than 2×10 | 06-09-2011 |
20110146565 | GROUP III NITRIDE CRYSTAL AND METHOD FOR SURFACE TREATMENT THEREOF, GROUP III NITRIDE STACK AND MANUFACTURING METHOD THEREOF, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method for surface treatment of a group III nitride crystal includes the steps of lapping a surface of a group III nitride crystal using a hard abrasive grain with a Mohs hardness higher than 7, and abrasive-grain-free polishing the lapped surface of the group III nitride crystal using a polishing solution without containing abrasive grain, and the polishing solution without containing abrasive grain has a pH of not less than 1 and not more than 6, or not less than 8.5 and not more than 14. Accordingly, the method for surface treatment of a group III nitride crystal can be provided according to which hard abrasive grains remaining at the lapped crystal can be removed to reduce impurities at the crystal surface. | 06-23-2011 |
20120094473 | GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate ( | 04-19-2012 |
Patent application number | Description | Published |
20090218659 | CHAMFERED FREESTANDING NITRIDE SEMICONDUCTOR WAFER AND METHOD OF CHAMFERING NITRIDE SEMICONDUCTOR WAFER - Technology of making freestanding gallium nitride (GaN) wafers has been matured at length. Gallium nitride is rigid but fragile. Chamfering of a periphery of a GaN wafer is difficult. At present edges are chamfered by a rotary whetstone of gross granules with weak pressure. Minimum roughness of the chamfered edges is still about Ra 10 μm to Ra 6 μm. The large edge roughness causes scratches, cracks, splits or breaks in transferring process or wafer process. A wafer of the present invention is bevelled by fixing the wafer to a chuck of a rotor, bringing an edge of the wafer into contact with an elastic whetting material having a soft matrix and granules implanted on the soft matrix, rotating the wafer and feeding the whetting material. Favorably, several times of chamfering edges by changing the whetting materials of smaller granules are given to the wafer. The chamfering can realize small roughness of Ra 10 nm and Ra 5 μm at edges of wafers. | 09-03-2009 |
20100187540 | GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×10 | 07-29-2010 |
20130292696 | CHAMFERED FREESTANDING NITRIDE SEMICONDUCTOR WAFER AND METHOD OF CHAMFERING NITRIDE SEMICONDUCTOR WAFER - Technology of making freestanding gallium nitride (GaN) wafers has been matured at length. Gallium nitride is rigid but fragile. Chamfering of a periphery of a GaN wafer is difficult. At present edges are chamfered by a rotary whetstone of gross granules with weak pressure. Minimum roughness of the chamfered edges is still about Ra 10 μm to Ra 6 μm. The large edge roughness causes scratches, cracks, splits or breaks in transferring process or wafer process. A wafer of the present invention is bevelled by fixing the wafer to a chuck of a rotor, bringing an edge of the wafer into contact with an elastic whetting material having a soft matrix and granules implanted on the soft matrix, rotating the wafer and feeding the whetting material. Favorably, several times of chamfering edges by changing the whetting materials of smaller granules are given to the wafer. The chamfering can realize small roughness of Ra10 nm and Ra5 μm at edges of wafers. | 11-07-2013 |