Inami, Tokyo
Akiko Inami, Tokyo JP
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20150273620 | Member Joining Structure - A first member has through holes. A linking member has a first holding portion and a second holding portion that hold an inner circumferential face and outer circumferential face of the first member; and engaging protrusions are formed on the first holding portion and second holding portion. The engaging protrusions are inserted into the through holes, and joined by joining portions formed thereupon. An attaching portion continues to the base edges of the first holding portion and second holding portion via a first supporting portion and a second supporting portion. | 10-01-2015 |
Hiroshi Inami, Tokyo JP
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20090105231 | AMIDE DERIVATIVES AS ROCK INHIBITORS - This invention relates to novel amide derivatives and salts thereof. More particularly, it relates to novel amide derivatives and salts thereof which act as a ROCK inhibitor, to a pharmaceutical composition comprising the same and to a method of using the same therapeutically in the treatment and/or prevention of ROCK-related disease. | 04-23-2009 |
20090131666 | ACYLAMINOPIPERIDINE COMPOUND - [Problem] To provide a compound which has an excellent activity to modulate the functions of CCR4 or TARC and/or MDC and can be used for the prevention and/or treatment of various inflammatory diseases, allergic diseases, autoimmune diseases and the like. | 05-21-2009 |
Ichiro Inami, Tokyo JP
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20100154840 | SYSTEM AND METHOD FOR CHEMICAL DECONTAMINATION OF RADIOACTIVE MATERIAL - A system for chemically decontaminating radioactive material. | 06-24-2010 |
20100168497 | CHEMICAL DECONTAMINATION APPARATUS AND DECONTAMINATION METHOD THEREIN - A chemical decontamination apparatus of the present invention chemically dissolves radioactive substance-containing oxide films formed or adhering on the surface of a decontamination object by using ozone water to conduct decontamination. The chemical decontamination apparatus includes an ozone generating unit for generating ozone gas, an ozone supplying device for supplying the generated ozone gas to an ozone supplying unit in water, and a sintered metal element | 07-01-2010 |
Kazuyoshi Inami, Tokyo JP
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20090079648 | HIGH FREQUENCY MODULE - To provide a high-frequency module having an antenna configured by integrally connecting a slot plate laid out with radiation slots to a plate having plural thin plates formed with a waveguide for supplying power to the slot plate, using a diffusion bonding. The waveguide of the antenna is connected to a dielectric waveguide of a high-frequency package via a waveguide provided on a resin substrate, thereby configuring a slot antenna at low cost, and connecting a power-supply slot of the slot antenna to a waveguide terminal of the high-frequency package with low loss. | 03-26-2009 |
20140069706 | HIGH-FREQUENCY PACKAGE - In a multilayer substrate, a quasi-coaxial line is formed as a structure for transmitting a high-frequency signal generated by a mounted high-frequency device from an uppermost layer to a lowermost layer to externally output and for transmitting an externally input high-frequency signal from the lowermost layer to the high-frequency device. The quasi-coaxial line has: a central conductor being a vertical through hole via that connects between a metal pattern formed on an upper surface of the uppermost layer and a metal pattern formed on a lower surface of the lowermost layer; and outer conductors being a plurality of interlayer vias that are circularly arranged around the central conductor and connect between two or more layers. Whole or a part of the vertical through hole via is substituted by a capacitor structure formed of conductor pads facing each other without any via. | 03-13-2014 |
Kiyoshi Inami, Tokyo JP
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20100165549 | GAS-INSULATED EQUIPMENT - A gas-insulated equipment such as a gas-insulated switchgear provided according to the invention can efficiently improve dielectric strength of an entire electrode system considering electric field distribution of the electrodes and conductors and improving insulation coordination so that miniaturization of the entire device can be achieved. The gas-insulated switchgear includes insulating gas sealed within an earth metal container and an insulating spacer insulating and supporting high-voltage receiving portions. Surfaces of shielding electrodes having a larger diameter than that of high-voltage conductors are covered with thick dielectric coatings, and surfaces of the high-voltage conductors are covered with thin dielectric coatings. | 07-01-2010 |
Masahiko Inami, Tokyo JP
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20080267450 | Position Tracking Device, Position Tracking Method, Position Tracking Program and Mixed Reality Providing System - The present invention has a simpler structure than before and is designed to precisely detect the position of a real environment's target object on a screen. The present invention generates a special marker image MKZ including a plurality of areas whose brightness levels gradually change in X and Y directions, displays the special marker image MKZ on the screen of a liquid crystal display | 10-30-2008 |
20090207246 | Interactive image acquisition device - The present invention tracks a specified target object and provides an image in real time in a way that gives a viewer a sense of reality. The present invention connects, in order to produce a spherical image Q | 08-20-2009 |
Masamichi Inami, Tokyo JP
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20100216798 | FUSED HETEROCYCLES AS LCK INHIBITORS - There is provided fused heterocycles of imidazopyridazine or pyrazolopyrimidine derivative represented by the formula (I), which have excellent Lck inhibitory activity and are useful for a medicament particularly an immunosuppressive agent. | 08-26-2010 |
20120034250 | CONDENSED PYRROLOPYRIDINE DERIVATIVE | 02-09-2012 |
Shuichi Inami, Tokyo JP
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20080245291 | Method for producing silicon single crystal - A method of growing silicon single crystals with a [110] crystallographic axis orientation by the Czochralski method is provided according to which a silicon seed crystal doped with a high concentration of boron is used and an included angle of a conical part during shoulder section formation is maintained within a specified range. It is thereby possible to grow large-diameter and heavy-weight dislocation-free silicon single crystals with a diameter of 300 mm or more in a stable manner, without the fear of dropping the single crystal during pulling up. Therefore, the method can be properly utilized in producing silicon single crystals as semiconductor materials. | 10-09-2008 |
20090197358 | Method for making COP evaluation on single-crystal silicon wafer - An evaluation area of an evaluation object wafer is concentrically divided in a radial direction, an upper limit value to the number of COPs is set in each divided evaluation segment, and an acceptance determination of the single-crystal silicon wafer is made using the upper limit value as a criterion. Thereby, a quantitative and objective COP evaluation can be made, and a proper determination is made based on a clear criterion. The evaluation method of the present invention can sufficiently deal with automation of the COP evaluation (inspection) and the higher-quality wafer in the near future, and the evaluation method can be widely applied to production of the single-crystal silicon wafer and production of a semiconductor device. | 08-06-2009 |
20090249998 | Single crystal pulling apparatus - A single crystal pulling apparatus comprises: a chamber; a crucible disposed within the chamber for containing a melt; a water-cooling means disposed within the chamber in such a manner as surrounding a single crystal pulled up from the melt in the crucible; water piping for feeding cooling water to and discharging the same from the water-cooling means; and supporting arms connected to the chamber for supporting the water-cooling means, wherein the supporting arms are disposed between the single crystal and the water piping. According to this configuration, the supporting arms can prevent the water piping from being damaged in the event of fall and collapse of the single crystal due to failure of the seed neck portion or in the event of rupture of the single crystal due to thermal stress, for instance. | 10-08-2009 |
20100000318 | Method for determining cop generation factors for single-crystal silicon wafer - A whole determination area of a targeted wafer is concentrically divided in a radial direction, COP density is obtained in each divided determination segment, a maximum value of the COP density is set as COP density | 01-07-2010 |
20120029834 | METHOD FOR DETERMINING COP GENERATION FACTORS FOR SINGLE-CRYSTAL SILICON WAFER - A whole determination area of a targeted wafer is concentrically divided in a radial direction, COP density is obtained in each divided determination segment, a maximum value of the COP density is set as COP density | 02-02-2012 |
20130054152 | METHOD FOR DETERMINING COP GENERATION FACTORS FOR SINGLE-CRYSTAL SILICON WAFER - A whole determination area of a targeted wafer is concentrically divided in a radial direction, COP density is obtained in each divided determination segment, a maximum value of the COP density is set as COP density | 02-28-2013 |
20140005953 | METHOD FOR DETERMINING COP GENERATION FACTORS FOR SINGLE-CRYSTAL SILICON WAFER | 01-02-2014 |
Taro Inami, Tokyo JP
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20120066421 | NETWORK SYSTEM AND NODE - A connector unit includes a communication line connecting a receiving port of a physical layer unit of a node to one adjacent node, and a communication line connecting a transmitting port of the physical layer unit to the one adjacent node via a capacitor, and a connector unit includes a communication line for connecting a receiving port of a physical layer unit of the node to the other adjacent node, and a communication line for connecting a transmitting port of the physical layer unit to the other adjacent node via a capacitor, wherein the connector unit is connected to a connector unit of the one adjacent node, so that the communication line of the node is connected to the communication line of the one adjacent node, and the communication line of the node is connected to the communication line of the one adjacent node. | 03-15-2012 |
Wataru Inami, Tokyo JP
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20120187293 | Transmission Electron Microscope - A scanning transmission electron microscope using optical fibers as optical guiding media. The microscope obtains a high-angle scattering image or a dark-field image from electrons transmitted through a specimen. A scintillator converts electrons transmitted through the specimen into optical signals. The optical fibers couple outputs from the scintillator to the photodetector segments. The connections of the fibers with the photodetector segments are formed into arbitrary shapes. | 07-26-2012 |
Yoshitake Inami, Tokyo JP
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20110031902 | INVERTER DEVICE - An object of the present invention is to provide an inverter device that can readily prevent flickering on a light emitting apparatus even when the light emission level thereof lowers. To achieve the object, an inverter device according to the present invention includes a rectifier ( | 02-10-2011 |