Patent application number | Description | Published |
20080272455 | SOLID-STATE IMAGING DEVICE - An n/p semiconductor substrate is formed in such a manner that an n type semiconductor layer is deposited on a p | 11-06-2008 |
20090108389 | IMAGING DEVICE COMPRISING SHIELDING UNIT WHICH SHIELDS LIGHT INCIDENT FROM IMAGING AREA TO OPTICAL BLACK AREA AND METHOD OF MANUFACTURING THE SAME - An imaging device according to an example of the invention comprises a first photoelectric conversion unit which is formed at an imaging area of a substrate, a second photoelectric conversion unit for black reference observation which is formed at an optical black area between the imaging area of the substrate and a peripheral circuit area where a peripheral circuit is formed, an insulating film which is formed on the imaging area and the optical black area of the substrate, and a shielding unit which is formed by connecting a contact and a interconnect in an accumulating direction of the insulating film from the substrate surface to the insulating film surface. | 04-30-2009 |
20100190289 | SOLID-STATE IMAGING DEVICE - An n/p semiconductor substrate is formed in such a manner that an n type semiconductor layer is deposited on a p | 07-29-2010 |
20100207224 | SOLID-STATE IMAGING DEVICE HAVING PENETRATION ELECTRODE FORMED IN SEMICONDUCTOR SUBSTRATE - A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a penetration electrode, a first insulating interlayer, a first electrode, and a first contact plug. The imaging element is formed on a first main surface of a semiconductor substrate. The external terminal is formed on a second main surface facing the first main surface of the substrate. The insulating film is formed in a through-hole formed in the substrate. The penetration electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first insulating interlayer is formed on the first main surface of the substrate and the penetration electrode. The first electrode is formed on the first insulating interlayer. The first contact plug is formed in the first insulating interlayer between the penetration electrode and the first electrode to electrically connect the penetration electrode and the first electrode. | 08-19-2010 |
20100237452 | SEMICONDUCTOR DEVICE AND BACKSIDE ILLUMINATION SOLID-STATE IMAGING DEVICE - A semiconductor substrate has a first principal face and a second principal face opposite thereto. A pixel unit, an analog circuit and a digital circuit are formed in a first, second and third region of the semiconductor substrate. An interconnect is formed on each of the first and second principal faces of the second region. A plurality of penetrative electrodes is formed in the semiconductor substrate to penetrate the first and second principal faces. These penetrative electrodes are electrically connected with interconnects formed in the first and second principal faces of the second region. A guard ring is formed in the semiconductor substrate to penetrate the first and second principal faces, the guard ring is surrounding the penetrative electrodes. | 09-23-2010 |
20100264503 | SOLID-STATE IMAGING DEVICE COMPRISING THROUGH-ELECTRODE - A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a through-electrode and a first electrode. The imaging element is formed on a first major surface of a semiconductor substrate. The external terminal is formed on a second major surface opposing the first major surface of the semiconductor substrate. The insulating film is formed in a through-hole formed in the semiconductor substrate. The through-electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first electrode is formed on the through-electrode on the first major surface of the semiconductor substrate. When viewed from a direction perpendicular to the first major surface of the semiconductor substrate, an outer shape with which the insulating film and the semiconductor substrate are in contact is larger than an outer shape of the first electrode. | 10-21-2010 |
20110062540 | SOLID-STATE IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a solid-state image sensor includes a semiconductor substrate including a first surface on which light enters, and a second surface opposite to the first surface, a pixel region formed in the semiconductor substrate, and including a photoelectric conversion element which converts the incident light into an electrical signal, a peripheral region formed in the semiconductor substrate, and including a circuit which controls an operation of the element in the pixel region, a plurality of interconnects which are formed in a plurality of interlayer insulating films stacked on the second surface, and are connected to the circuit, and a support substrate formed on the stacked interlayer insulating films and the interconnects. An uppermost one of the interconnects formed in an uppermost one of the interlayer insulating films is buried in a first trench formed in the uppermost interlayer insulating film. | 03-17-2011 |
20110068476 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad. | 03-24-2011 |
20120252156 | SOLID-STATE IMAGING DEVICE HAVING PENETRATION ELECTRODE FORMED IN SEMICONDUCTOR SUBSTRATE - A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a penetration electrode, a first insulating interlayer, a first electrode, and a first contact plug. The imaging element is formed on a first main surface of a semiconductor substrate. The external terminal is formed on a second main surface facing the first main surface of the substrate. The insulating film is formed in a through-hole formed in the substrate. The penetration electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first insulating interlayer is formed on the first main surface of the substrate and the penetration electrode. The first electrode is formed on the first insulating interlayer. The first contact plug is formed in the first insulating interlayer between the penetration electrode and the first electrode to electrically connect the penetration electrode and the first electrode. | 10-04-2012 |
20120318962 | BACKSIDE ILLUMINATION SOLID-STATE IMAGE PICKUP DEVICE - According to one embodiment, an image pickup device includes a semiconductor substrate and first and second color filters. The semiconductor substrate includes a first principal surface and a second principal surface lying opposite the first principal surface. The first color filter has a first bottom surface lying on the second principal surface side and a first top surface lying opposite the first bottom surface. The second color filter has a second bottom surface lying on the second principal surface side and a second top surface lying opposite the second bottom surface. The first color filter includes a spectroscopic filter configured to allow light having passed through the semiconductor substrate to pass through. In a cross section perpendicular to the second principal surface, the first bottom surface is longer than the first top surface, and the second bottom surface is shorter than the second top surface. | 12-20-2012 |
20130248862 | SOLID-STATE IMAGE SENSING DEVICE AND CAMERA - According to one embodiment, a solid-state image sensing device includes a semiconductor substrate having a first and second surface, an insulating film covering an element on the first surface, a pixel array including pixels configured to photoelectrically convert light applied on the side of the second surface, contact regions in the semiconductor substrate, one or more through-electrodes respectively provided in the contact regions, and first pads provided on the side of the second surface to correspond to the respective contact regions. The first pad extends in a first direction from the contact regions toward the pixel array. | 09-26-2013 |
20140110771 | SOLID-STATE IMAGING DEVICE AND SEMICONDUCTOR DEVICE - According to one embodiment, a solid-state imaging device includes a semiconductor substrate including a pixel area and a peripheral circuit area, a first line provided in the peripheral circuit area and on a first principal surface of the semiconductor substrate, a second line provided in the peripheral circuit area and on a second principal surface of the semiconductor substrate, a first through electrode connected to one end of the first line and one end of the second line and passing through the semiconductor substrate, and a second through electrode connected to the other end of the first line and the other end of the second line and passing through the semiconductor substrate. | 04-24-2014 |
20150035103 | SOLID STATE IMAGING DEVICE - According to one embodiment, a solid state imaging device includes a semiconductor substrate comprising a first surface and a second surface opposite the first surface; a circuit at a side of the first surface of the semiconductor substrate; a pixel in the semiconductor substrate and converting light from a side of the second surface into electric charge; and an element at a side of the second surface of the semiconductor substrate. The pixel includes a photo diode in the semiconductor substrate at the side of the first surface, and the photo diode includes a diffusion layer in an impurity region in the semiconductor substrate at the side of the first surface. | 02-05-2015 |