Patent application number | Description | Published |
20100289050 | LIGHT-EMITTING ELEMENT - Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a second electrode layer, a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on the second electrode layer, a reflective member spaced apart from the light emitting semiconductor layer on the second electrode layer, and a first electrode layer on the first conductive semiconductor layer. | 11-18-2010 |
20110049553 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is provided. The light emitting device package includes a substrate including a first cavity having a first depth and a lateral surface inclined with respect to a bottom surface and a second cavity having a second depth recessed from the bottom surface of the first cavity and a lateral surface perpendicular to the bottom surface of the first cavity, a first electrode layer and a second electrode layer on the substrate, and a light emitting diode within the second cavity, the light emitting diode being electrically connected to the first and second electrode layers. | 03-03-2011 |
20110156073 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure, a buffer layer on the light emitting structure, and a filter layer on the buffer layer. | 06-30-2011 |
20110193093 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Provided is a light emitting device. A light emitting device includes: a conductive support member; a light emitting structure for generating a light on the conductive support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer; an electrode on the light emitting structure; and an oxide layer between the electrode and the light emitting structure. The light emitting structure includes an oxygen-injected region where oxygen is injected on an upper portion of the light emitting structure. | 08-11-2011 |
20110278625 | LIGHT-EMITTING ELEMENT - Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a second electrode layer, a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on the second electrode layer, a reflective member spaced apart from the light emitting semiconductor layer on the second electrode layer, and a first electrode layer on the first conductive semiconductor layer. | 11-17-2011 |
Patent application number | Description | Published |
20090273003 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device comprises a second electrode layer; a second conductivity-type semiconductor layer on the second electrode layer; a current blocking layer comprising an oxide of the second conductivity-type semiconductor layer; an active layer on the second conductivity-type semiconductor layer; a first conductivity-type semiconductor layer on the active layer; and a first electrode layer on the first conductivity-type semiconductor layer. | 11-05-2009 |
20100123148 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a plurality of compound semiconductor layers, a first electrode, a second electrode layer, and a conductive support member. The plurality of compound semiconductor layers comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The first electrode is formed under the compound semiconductor layer. The second electrode layer is formed on the compound semiconductor layer. The second electrode layer has an unevenness. The conductive support member is formed on the second electrode layer. | 05-20-2010 |
20100252850 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises a multireflection layer comprising at least one of reflection layers of different refractive indices, a first conductive semiconductor layer on the multireflection layers, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. | 10-07-2010 |
20100264440 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a IH-V group compound semiconductor, a reflective layer comprising mediums, which are different from each other and alternately stacked under the light emitting structure, and a second electrode layer under the reflective layer. | 10-21-2010 |
20110248298 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device comprises a second electrode layer; a second conductivity-type semiconductor layer on the second electrode layer; a current blocking layer comprising an oxide of the second conductivity-type semiconductor layer; an active layer on the second conductivity-type semiconductor layer; a first conductivity-type semiconductor layer on the active layer; and a first electrode layer on the first conductivity-type semiconductor layer. | 10-13-2011 |
20120280260 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a first electrode on an region of top surface of a first conductive semiconductor layer; a second electrode layer under a second conductive semiconductor layer; and a conductive support member under the second electrode layer, wherein the second conductive semiconductor layer includes a plurality of recesses on a lower portion of the second conductive semiconductor layer, wherein the second electrode layer has an uneven structure corresponding to the plurality of recesses. | 11-08-2012 |
20120286316 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active; an electrode on a first region of the first conductive semiconductor layer; a conductive support member under the light emitting structure; a metal layer between the light emitting structure and the conductive support member; and a reflective layer between the metal layer and the light emitting structure, wherein the metal layer is physically contacted with a lower surface of the reflective layer, wherein the reflective layer includes a first layer and a second layer, wherein the first layer has a different material from the second layer, wherein the metal layer has a protrusion, wherein the first conductive semiconductor layer includes a roughness. | 11-15-2012 |
20130292732 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a III-V group compound semiconductor, a reflective layer comprising mediums, which are different from each other and alternately stacked under the light emitting structure, and a second electrode layer under the reflective layer. | 11-07-2013 |