Patent application number | Description | Published |
20110057240 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a plurality of conduction plugs disposed on an active region, a bit line connected to a conduction plug of the plurality of conduction plugs which is disposed in a central portion of the active region, and storage nodes connected with conduction plugs of the plurality of conduction plugs which are disposed at both peripherals of the active region and passing over the active region. | 03-10-2011 |
20110163415 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device comprises depositing an absorption barrier layer of a dielectric film on a semiconductor substrate including a bottom electrode contact plug so as to separate the dielectric films between capacitors without having any influence of a bias of the adjacent capacitor, thereby improving a refresh characteristic of cells. | 07-07-2011 |
20120018799 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are provided. The method includes forming a cell structure where a storage node contact is coupled to a silicon layer formed over a gate, thereby simplifying the manufacturing process of the device. The semiconductor device includes a bit line buried in a semiconductor substrate; a plurality of gates disposed over the semiconductor substrate buried with the bit line; a first plug disposed in a lower portion between the gates and coupled to the bit line; a silicon layer disposed on the upper portion and sidewalls of the gate; and a second plug coupled to the silicon layer disposed over the gate. | 01-26-2012 |
20120175701 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are disclosed, in which a gate formed over a device isolation film is an inner gate inserted into a recess so that device operation characteristics are improved. A semiconductor device includes a recess formed in a device isolation film of a semiconductor substrate including an active region and the device isolation film, a gate formed over the recess and having a width smaller than that of the recess, and a capping film formed over a sidewall of a gate including the recess exposed by the gate. | 07-12-2012 |
20130119463 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are provided. The method includes forming a cell structure where a storage node contact is coupled to a silicon layer formed over a gate, thereby simplifying the manufacturing process of the device. The semiconductor device includes a bit line buried in a semiconductor substrate; a plurality of gates disposed over the semiconductor substrate buried with the bit line; a first plug disposed in a lower portion between the gates and coupled to the bit line; a silicon layer disposed on the upper portion and sidewalls of the gate; and a second plug coupled to the silicon layer disposed over the gate. | 05-16-2013 |
20130130453 | Method for manufacturing semiconductor device with first and second gates over buried bit line - A semiconductor device and a method for manufacturing the same are provided. The method includes forming a cell structure where a storage node contact is coupled to a silicon layer formed over a gate, thereby simplifying the manufacturing process of the device. The semiconductor device includes a bit line buried in a semiconductor substrate; a plurality of gates disposed over the semiconductor substrate buried with the bit line; a first plug disposed in a lower portion between the gates and coupled to the bit line; a silicon layer disposed on the upper portion and sidewalls of the gate; and a second plug coupled to the silicon layer disposed over the gate. | 05-23-2013 |
20130256891 | SEMICONDUCTOR DEVICE WITH A COPPER LINE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device with a copper line comprises a lower portion of a copper pattern buried in an interlayer insulating film, an upper portion of the copper disposed over the upper portion of the lower copper pattern, and an upper barrier metal layer disposed over upper and side surfaces of the upper copper pattern. As a result, the copper pattern is protected by the barrier metal layers, providing a metal line with a stable structure. | 10-03-2013 |
20140302651 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH FIRST AND SECOND GATES OVER BURIED BIT LINE - A semiconductor device and a method for manufacturing the same are provided. The method includes forming a cell structure where a storage node contact is coupled to a silicon layer formed over a gate, thereby simplifying the manufacturing process of the device. The semiconductor device includes a bit line buried in a semiconductor substrate; a plurality of gates disposed over the semiconductor substrate buried with the bit line; a first plug disposed in a lower portion between the gates and coupled to the bit line; a silicon layer disposed on the upper portion and sidewalls of the gate; and a second plug coupled to the silicon layer disposed over the gate. | 10-09-2014 |
20140327085 | VARIABLE RESISTANCE DEVICE HAVING PARALLEL STRUCTURE - A variable resistance device includes a parallel structure. The variable resistance device is formed using a silicon (Si) substrate. In the variable resistance device, a conductive line arranged in a current direction is formed over an impurity region, and a resistance value of the resistance device is precisely adjusted by adjusting a level of a voltage applied to the conductive line. The variable resistance device includes a first impurity region formed in a substrate, a second impurity region formed in the substrate and arranged parallel to the first impurity region, a conductive line formed over the first impurity region, and electrode terminals formed at both longitudinal ends of the second impurity region to be coupled to the second impurity region. | 11-06-2014 |
20150072513 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device comprises a bit line formed over a semiconductor substrate. The bit line has an upper portion and a lower portion, and the upper portion is narrower than the lower portion. An barrier film is formed over sidewalls of the bit line, and a storage node contact plug is obtained by filling a space between the bit lines so that an upper portion of the storage node contact is wider than a lower portion of the storage node contact. As a result, the process can be simplified and a short between the storage node contact plug and the bit line can be prevented. | 03-12-2015 |
Patent application number | Description | Published |
20090230506 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a fuse pattern formed as conductive polymer layer having a low melting point. The fuse pattern is easily cut at low temperature to improve repair efficiency. The semiconductor device includes first and second fuse connecting patterns that are separated from each other by a distance, a fuse pattern including a conductive polymer layer formed between the first and second fuse connection patterns and connecting the first and second fuse connection patterns, and a fuse box structure that exposes the fuse pattern. | 09-17-2009 |
20100155884 | MELTING FUSE OF SEMICONDUCTOR AND METHOD FOR FORMING THE SAME - The present invention discloses a fuse of a semiconductor device and manufacturing method thereof. The fuse of a semiconductor device of the present invention includes a first conductive pattern; and a second conductive pattern which is separated from the first conductive pattern with a given gap, wherein the first conductive pattern and the second conductive pattern are melted in a laser irradiation to be connected. Accordingly, the present invention prevents the damage of the adjacent fuse in the repair process, enabling to improve the reliability of device and accomplish the high integration. | 06-24-2010 |
20100258859 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING LOW CONTACT RESISTANCE - Disclosed herein is a method for forming a semiconductor device capable of reducing contact resistance in a highly integrated semiconductor device. The semiconductor device according to an exemplary embodiment of the invention includes an active region defined by an isolation film, the active region having porous regions therein, and gate patterns formed over the active region. | 10-14-2010 |
20100320616 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device comprises forming an insulating layer on a semiconductor substrate, etching the insulating layer to form contact regions, forming a conductive layer on an entire surface including the contact regions, and spiking the conductive layer in the semiconductor substrate. | 12-23-2010 |
20110175192 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a fuse pattern formed as conductive polymer layer having a low melting point. The fuse pattern is easily cut at low temperature to improve repair efficiency. The semiconductor device includes first and second fuse connecting patterns that are separated from each other by a distance, a fuse pattern including a conductive polymer layer formed between the first and second fuse connection patterns and connecting the first and second fuse connection patterns, and a fuse box structure that exposes the fuse pattern. The conductive polymer layer includes a nano-sized metal powder and a polymer. | 07-21-2011 |
20140061741 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device comprises a bit line formed over a semiconductor substrate. The bit line has an upper portion and a lower portion, and the upper portion is narrower than the lower portion. An barrier film is formed over sidewalls of the bit line, and a storage node contact plug is obtained by filling a space between the bit lines so that an upper portion of the storage node contact is wider than a lower portion of the storage node contact. As a result, the process can be simplified and a short between the storage node contact plug and the bit line can be prevented. | 03-06-2014 |
Patent application number | Description | Published |
20090166801 | FUSE OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a fuse of a semiconductor device comprises forming an island-type metal fuse in a region where a laser is irradiated, so that laser energy may not be dispersed in a fuse blowing process, thereby improving repair efficiency. | 07-02-2009 |
20090275258 | Liquid crystal display panel transferring system - A liquid crystal display (LCD) panel transferring system including a panel transferring apparatus that takes out and transfers a LCD panel formed at a surface of a substrate; a camera installed at the panel transferring apparatus that captures an image of the LCD panel; and a controlling unit that aligns the LCD panel with the panel transferring apparatus based on an image captured using the camera. The panel transferring apparatus includes a main body, a plurality of suction holes formed at the main body that fix an LCD panel to the main body, and a pin formed at the peripheral area of the main body that applies an impact to a dummy region to separate the LCD panel from the substrate. | 11-05-2009 |
20100176911 | Fuse of Semiconductor Device - A method for manufacturing a fuse of a semiconductor device comprises forming an island-type metal fuse in a region where a laser is irradiated, so that laser energy may not be dispersed in a fuse blowing process, thereby improving repair efficiency. | 07-15-2010 |
20140285452 | APPARATUS AND METHOD FOR CONTROLLING OPERATION OF AN ELECTRONIC DEVICE - An apparatus and a method for controlling an operation of an electronic device are provided. The method includes detecting a first input or a second input corresponding to a proximity distance of an input instrument in proximity to a display screen; identifying an input combination which includes at least one of the first input, the second input, or a combination of the first and second inputs which are inputted at a predetermined time interval; and performing a predetermined function corresponding to the identified input combination. | 09-25-2014 |
20140327614 | METHOD OF OPERATING TOUCH SCREEN AND ELECTRONIC DEVICE THEREOF - A method of operating a touch screen and an electronic device thereof are provided. The method includes the operations of sensing an object approaching the touch screen, and displaying a pointer at a predetermined position of the touch screen in response to the object. | 11-06-2014 |
20140351768 | METHOD FOR PROCESSING INPUT AND ELECTRONIC DEVICE THEREOF - A method employed by an electronic device determines a state of the electronic device in a hover input mode. The state comprises at least one of, (a) an orientation of the electronic device and (b) finger locations of a grip holding the electronic device. The method sets a hover lock region on a touchscreen in response to the determined state of the electronic device and inhibits activation of a command associated with selection of an object in the hover lock region. | 11-27-2014 |