Patent application number | Description | Published |
20150135791 | METHOD OF ROLLING NIW ALLOY TAPES FOR COATED CONDUCTORS - A method of rolling NiW alloy tapes for coated conductors belongs to the technical field of metal materials rolling. According to the method, a cylindrical NiW alloy ingot with a diameter not less than 10 mm is used to be rolled back and forth along the axial direction as a rolling direction, wherein the content of W is 5˜7 at. %, and the axis of this ingot is perpendicular to the plane where the axes of working rollers are located. During rolling process, the cross sectional area reduction of the ingot is retained at 5% per pass. When the total cross sectional area reduction of the ingot is larger than 98% and the thickness of the tape is down to 60˜100 μm, the rolling is stopped, and thus the NiW alloy tape is obtained. The method has the advantages that the negative influence generated when the NiW alloy tape is produced from a cuboid initial NiW alloy ingot can be reduced as much as possible, the yield of the NiW alloy tapes is increased, as well as relatively ideal effects can be obtained in terms of the surface biaxial texture, the length and the axial quality. | 05-21-2015 |
20150373728 | DEVICE AND METHOD FOR CONFIGURING ALMOST BLANK SUBFRAME AND HETEROGENEOUS WIRELESS COMMUNICAITON NETWORK - An apparatus and a method for a wireless communication network. The apparatus includes circuitry configured for acquiring the first information associated with an indicator indicating communication quality of user terminals served by an interfering base station; acquiring second information associated with an indicator indicating interfered degree of user terminals interfered by the interfering base station; configuring, based on the first information and the second information, transmission of the interfering base station for inter-base station coordination. The technical solution improves the overall performance of the wireless communication heterogeneous network. | 12-24-2015 |
20160027813 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF AND DISPLAY APPARATUS - An array substrate and a manufacturing method thereof, and a display apparatus comprising the array substrate are provided. The array substrate comprises a base substrate, and a thin film transistor and a storing capacitor provided on the base substrate, the thin film transistor comprises a gate, a source, a drain and a gate insulation layer provided between the source and drain and the gate, the storing capacitor comprises a first plate, a second plate and a dielectric layer provided between the first plate and the second plate, wherein, both of the first plate and the second plate are formed of metal material, and the dielectric layer is formed of the same material as the gate insulation layer. In the array substrate of the present invention, the charging speed of the storing capacitor can be improved and the display quality of the display apparatus comprising the array substrate is further improved. | 01-28-2016 |
20160035634 | IMPROVED ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS PERFORMING THE SAME - The present invention provides an improved ion implantation method and an ion implantation apparatus for performing the improved ion implantation method, belongs to the field of ion implantation technology, which can solve the problem of the poor stability and uniformity of the ion beam of the existing ion implantation apparatus. The improved ion implantation method of the invention comprises steps of: step S | 02-04-2016 |
20160061722 | METHOD FOR DETECTING RESISTANCE OF A PHOTO RESIST LAYER - The present disclosure provides a method for detecting resistance of a photo resist layer. The method includes: providing a silicon wafer and measuring a refractive index of a surface of the silicon wafer as an initial refractive index of the surface of the silicon wafer; forming photo resist layers with different thicknesses on the surface of the silicon wafer; performing ion-implantation on the photo resist layers by predetermined amounts; peeling off the photo resist layers from the surface of the silicon wafer; and testing the refractive indexes of different areas on the surface of the silicon wafer after the ion-implantation, on which the photo resist layers with different thicknesses are located and determining the resistance of the photo resist layers with different thicknesses in contrast to the initial refractive index before the ion-implantation. | 03-03-2016 |
20160071691 | A METHOD FOR MONITORING ION IMPLANTATION - A method for monitoring ion implantation, comprising: a), providing a control piece and forming a mask layer; b), performing ion implantation process to implant a predetermined dose of impurity ions into the control piece, an area on the control piece uncovered by the mask layer being an impurity implantation area and an area on the control piece covered by the mask layer being an impurity non-implantation area; c), peeling off the mask layer from the control piece; d), performing oxidation treatment on the control piece; and e), respectively measuring thicknesses of the oxide layers on the impurity implantation area and the impurity non-implantation area of the control piece, and monitoring the impurity dose of the ion implantation on the basis of a ratio of the thickness of the oxide layer in the impurity implantation area to the thickness of the oxide layer in the impurity non-implantation area. By this method, it is possible to accurately monitor whether or not the dose of the implanted ions meets the predetermined requirement, and it is possible to effectively avoid the defects of incorrect monitor result caused by the variation of the intrinsic resistance of the semiconductor, improve the accuracy of the monitoring, and thus improve the performance and yield rate of the device. | 03-10-2016 |
20160095007 | CARRIER COORDINATION DEVICE AND SYSTEM, COMMUNICATIONS DEVICE AND METHOD, AND MEASUREMENT DEVICE AND METHOD - A carrier coordination device and system, a communications device and method, and a measurement device and method. The carrier coordination device includes: a receiving unit, used to receive interference information for describing interference suffered by a user equipment; and a coordination unit, used to determine an interfering source base station of the user equipment according to the interference information, and coordinate carrier use of the user equipment and/or the interfering source base station at least based on the interference information and carrier state information of the interfering source base station, to reduce the interference suffered by the user equipment. The technology can be applied in a wireless communications field. | 03-31-2016 |
20160133755 | LOW TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE - A low temperature poly-silicon thin film transistor and its manufacturing method, an array substrate and a display device are provided. The method comprises: forming a poly-silicon film on a base substrate ( | 05-12-2016 |