Hui-Chu
Hui-Chu Hsu, Hsinchu TW
Patent application number | Description | Published |
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20100258175 | PANCHROMATIC PHOTOSENSITIZERS AND DYE-SENSITIZED SOLAR CELL USING THE SAME - Panchromatic photosensitizers having a Formula of ML | 10-14-2010 |
20110277841 | THIOCYANATE-FREE RU(II) SENSITIZERS AND DYE-SENSITIZED SOLAR CELLS - Photosensitizers having a formula of RuL | 11-17-2011 |
Hui-Chu Hsu, Beidou Township TW
Patent application number | Description | Published |
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20100137539 | Visible light-absorbing complex, triazine-based dendritic polymer, and organic photovoltiac device - A visible light-absorbing complex includes an electron acceptor and an electron donor, the electron donor having a triazine-based dendritic polymer formed of a core group (C) and branch groups, each of the branch groups being composed of terminal groups (P) and a triazine-based moiety group. The triazine-based dendritic polymer is represented by the following formula (I): | 06-03-2010 |
20130237703 | Visible Light-Absorbing Complex, Triazine-Based Dendritic Polymer, and Organic Photovoltaic Device - A visible light-absorbing complex includes an electron acceptor and an electron donor, the electron donor having a triazine-based dendritic polymer formed of a core group (C) and branch groups, each of the branch groups being composed of terminal groups (P) and a triazine-based moiety group. The triazine-based dendritic polymer is represented by the following formula (I): | 09-12-2013 |
Hui-Chu Lin, Hsinchu County TW
Hui-Chu Lin, Hsinchu TW
Patent application number | Description | Published |
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20150053974 | THIN FILM TRANSISTOR AND DISPLAY ARRAY SUBSTRATE USING SAME - A thin film transistor includes a gate electrode, a gate insulating layer, a channel layer, an etching stop layer, two contact holes, a source, and a drain. The gate insulating layer covers the gate electrode. The channel layer is arranged on the gate insulating layer corresponding to the gate electrode. The etching stop layer covers the channel layer and includes an organic stop layer and a hard mask layer, the hard mask layer is located on a surface of the organic stop layer opposite to the channel layer to enhance a hardness of the organic stop layer. The two contact holes pass through the etching stop layer. The source connects to the channel via one contact hole, and the drain connects to the channel via the other contact hole. | 02-26-2015 |
20150056761 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND DISPLAY ARRAY SUBSTRATE USING SAME - A manufacturing method of a thin film transistor includes hard-baking and etching processes for a stop layer. Two through holes are exposed and developed in a photoresistor layer, in which a distance between the two through holes is substantially equal to the channel length of the thin film transistor. Further, the etching stop layer is dry-etched to obtain the thin film transistor having an expected channel length. | 02-26-2015 |
Hui-Chu Shih, Shulin City TW
Patent application number | Description | Published |
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20110043087 | SLIDE RAIL BUFFERING STRUCTURE - A slide rail buffering structure includes a connection board, a slidable board, a damper, a pull-resistant assembly, and a positioning bar. The positioning bar is received in a slide channel of the connection board. The slidable board is fit over the positioning bar and is set on the track portion of the connection board. The damper is received in an end of the connection board and the damper is coupled to the slidable board. The pull-resistant assembly is connected between the slidable board and the connection board and is set at an end of a rail base plate. The structure of the present invention allows the positioning bar to be caught and driven by a guide section of a rail plate to alleviate and buffer the pulling force of the connection board that is moved backward for returning so as to prevent damage caused by excessive pulling force. | 02-24-2011 |