Huang, Jhonghe City
Chi-Hun Huang, Jhonghe City TW
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20110175723 | METHOD FOR REMINDING OF BATTERY POWER LEVEL - The present invention discloses a method for reminding of a battery power level, which generates a grading instruction according to the battery power level of an electronic device, and which controls the electronic device to present an obvious reminder corresponding to the grading instruction. The present invention uses a progressively intensified visual reminder to stepwise semi-compel the user to notice the insufficiency of the battery power and respond to the reminding. Thereby, the present invention can guarantee that the user indeed knows the status of the residual electric energy of the battery. | 07-21-2011 |
Eddie Huang, Jhonghe City TW
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20090032822 | HIGH POWER LIGHT EMITTING DIODE - A high power light emitting diode, The high power light emitting diode comprises a light emitting diode chip, a main module, two first electrode pins, two second electrode pins, and at least one heat dissipation board. The main module has a concave and the light emitting diode chip is positioned in the concave. The first electrode pins are connected to a first side of the main module and also electrically connected to the light emitting diode chip. The second electrode pins are arranged on a second side of the main module that is relative to the first electrode pins wherein the second electrode pins and the first electrode pins are electrically opposite. The second electrode pins are electrically connected to the light emitting diode chip. The heat dissipation board is connected to a part of the main module between the first electrode pin and the second electrode pin. | 02-05-2009 |
Hua-Chun Huang, Jhonghe City TW
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20100052377 | POSITIONING DEVICE FOR MOUNTING A SEAT ON A SEAT TUBE OF A BICYCLE - A positioning device includes a mount secured on a seat tube, and left and right joint members having joint surfaces which abut against the mount, and gripping cavities which mate with clamping cavities of left and right clamping members to permit lengthwise segments of left and right anchoring bars of a seat to be clamped in left and right bar-engaging zones, respectively. When the joint surfaces switch places or when the left and right clamping members are shifted, the bar-engaging zones are displaced from a first position to be proximate to corresponding ones of front and rear ends of the anchoring bars, to a second position to be proximate to the other corresponding ones of the front and rear ends of the anchoring bars, thereby enabling the seat to be adjusted to a desired position relative to the seat tube. | 03-04-2010 |
Huai-Ying Huang, Jhonghe City TW
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20080212353 | SRAM design with separated VSS - An array of static random access memory (SRAM) cells arranged in a plurality of rows and a plurality of columns includes a plurality of VSS lines connected to VSS nodes of the SRAM cells, with each VSS line connected to the SRAM cells in a same column. The plurality of VSS lines includes a first VSS line connected to a first column of the SRAM cells; and a second VSS line connected to a second column of the SRAM cells, wherein the first and the second VSS lines are disconnected from each other. | 09-04-2008 |
20090323401 | 8T LOW LEAKAGE SRAM CELL - This invention discloses a static random access memory (SRAM) cell comprising a pair of cross-coupled inverters connected between a positive supply voltage (Vcc) and a first node, a first NMOS transistor with a gate and drain connected to the first node and a source connected to a ground, and a second NMOS transistor with a drain and source connected to the first node and the ground, respectively, and a gate connected to a control-line. | 12-31-2009 |
20100315862 | Stable SRAM Cell - SRAM cells and SRAM cell arrays are described. In one embodiment, an SRAM cell includes a first inverter and a second inverter cross-coupled with the first inverter to form a first data storage node and a complimentary second data storage node for latching a value. The SRAM cell further includes a first pass-gate transistor and a switch transistor. A first source/drain of the first pass-gate transistor is coupled to the first data storage node, and a second source/drain of the first pass-gate transistor is coupled to a first bit line. The first source/drain of the switch transistor is coupled to the gate of the first pass-gate transistor. | 12-16-2010 |
20110198699 | INTEGRATED SEMICONDUCTOR STRUCTURE FOR SRAM AND FABRICATION METHODS THEREOF - A SRAM device with metal gate transistors is provided. The SRAM device includes a PMOS structure and an NMOS structure over a substrate. Each of the PMOS and the NMOS structure includes a p-type metallic work function layer and an n-type metallic work function layer. The p-type work metallic function layer and the n-type metallic work function layer form a combined work function for the PMOS and the NMOS structures. | 08-18-2011 |
20110241127 | Well implant through dummy gate oxide in gate-last process - The present disclosure relates to methods for fabricating a field-effect transistor. The method includes performing a pocket implantation to a semiconductor substrate; thereafter forming a polysilicon layer on the semiconductor substrate; and patterning the polysilicon layer to form a polysilicon gate. | 10-06-2011 |
20120108036 | Active Region Patterning in Double Patterning Processes - A method includes forming an SRAM cell including a first and a second pull-up transistor and a first and a second pull-down transistor. The step of forming the SRAM cell includes forming a first and a second active region of the first and the second pull-up transistors using a first lithography mask, and forming a third and a fourth active region of the first and the second pull-down transistors using a second lithography mask. | 05-03-2012 |
20130146987 | Integrated Semiconductor Structure for SRAM and Fabrication Methods Thereof - A SRAM device with metal gate transistors is provided. The SRAM device includes a PMOS structure and an NMOS structure over a substrate. Each of the PMOS and the NMOS structure includes a p-type metallic work function layer and an n-type metallic work function layer. The p-type work metallic function layer and the n-type metallic work function layer form a combined work function for the PMOS and the NMOS structures. | 06-13-2013 |
20130250660 | Stable SRAM Cell - SRAM cells and SRAM cell arrays are described. In one embodiment, an SRAM cell includes a first inverter and a second inverter cross-coupled with the first inverter to form a first data storage node and a complimentary second data storage node for latching a value. The SRAM cell further includes a first pass-gate transistor and a switch transistor. A first source/drain of the first pass-gate transistor is coupled to the first data storage node, and a second source/drain of the first pass-gate transistor is coupled to a first bit line. The first source/drain of the switch transistor is coupled to the gate of the first pass-gate transistor. | 09-26-2013 |
20140254248 | Stable SRAM Cell - SRAM cells and SRAM cell arrays are described. In one embodiment, an SRAM cell includes a first inverter and a second inverter cross-coupled with the first inverter to form a first data storage node and a complimentary second data storage node for latching a value. The SRAM cell further includes a first pass-gate transistor and a switch transistor. A first source/drain of the first pass-gate transistor is coupled to the first data storage node, and a second source/drain of the first pass-gate transistor is coupled to a first bit line. The first source/drain of the switch transistor is coupled to the gate of the first pass-gate transistor. | 09-11-2014 |
20140254249 | Stable SRAM Cell - SRAM cells and SRAM cell arrays are described. In one embodiment, an SRAM cell includes a first inverter and a second inverter cross-coupled with the first inverter to form a first data storage node and a complimentary second data storage node for latching a value. The SRAM cell further includes a first pass-gate transistor and a switch transistor. A first source/drain of the first pass-gate transistor is coupled to the first data storage node, and a second source/drain of the first pass-gate transistor is coupled to a first bit line. The first source/drain of the switch transistor is coupled to the gate of the first pass-gate transistor. | 09-11-2014 |
20150155382 | Well Implant Through Dummy Gate Oxide In Gate-Last Process - The present disclosure relates to methods for fabricating a field-effect transistor. The method includes performing a pocket implantation to a semiconductor substrate; thereafter forming a polysilicon layer on the semiconductor substrate; and patterning the polysilicon layer to form a polysilicon gate. | 06-04-2015 |
Kong Huang, Jhonghe City TW
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20090056842 | Compositions of gas generates with polymer adhesive - Compositions of gas generants with polymer adhesive are disclosed. The gas generant compositions include nitrogen containing guanidines, hydrogen containing tetrazole, oxidizing agent, polymer adhesive, and residue aggregating agent. The nitrogen containing guanidines range from 25 to 45 weight percent. The hydrogen containing tetrazole is 10-30 weight percent. The nitrate oxidizing agent is 20-40 weight percent. The perchlorate oxidizing agent ranges from 1 to 15 weight percent. The polymer adhesive is 0.1-3 weight percent and the residue aggregating agent weights from 1 to 15 weight percent. The gas generant pellets are applied to inflators for generating gas so that the air bag is inflating instantly for protecting driver and passengers in automobile. | 03-05-2009 |
Mao-Jung Huang, Jhonghe City TW
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20150364883 | ELECTRICAL CONNECTOR WITH GROUNDING MECHANISM CONTACTING OUTER SHELL - An electrical connector includes an upper contact module, a lower contact module, an outer insulative housing inject-molded with the upper contact module and the lower contact module, a shielding mechanism at least partly fixed in the outer insulative housing and a metallic outer shell enclosing the outer insulative housing. The upper contact module includes a number of upper contacts and an upper housing inject-molded with the upper contacts. The lower contact module includes a number of lower contacts and a lower housing inject-molded with the lower contacts. The shielding mechanism and the metallic outer shell are in mechanical contact with each other for achieving a relative larger grounding area. | 12-17-2015 |
20150364888 | METHOD FOR MANUFACTURING ELECTRICAL CONNECTOR WITH MULTIPLE INJECT-MOLDING PROCESSES - A method for making an electrical connector include steps of: S1) providing a plurality of upper contacts and inject-molding an upper housing over the upper contacts so as to form an upper contact module; S2) providing a plurality of lower contacts and inject-molding a lower housing over the lower contacts so as to form a lower contact module; and S3) inject-molding an outer insulative housing over the upper contact module and the lower contact module. | 12-17-2015 |
Po-Ching Huang, Jhonghe City TW
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20090072435 | PASSIVE DEVICE POLYMER CARRIER TAPE AND PROCESS THEREOF - A polymer carrier tape for placement of a passive device includes polymer of 10˜80% by weight of polyolefin (e.g., PE, PP), polymer of polyolefin grafted with acid anhydride or polymer of cross-linked polyolefin blended with calcium carbonate, ethylene-vinyl acetate (EVA), traces of anti-oxidant and 5˜30% anti-static agent by weight in a polymer compounding process to produce an admixture, the admixture is then molded into coiled carrier tape to replace conventional paper carrier tape. | 03-19-2009 |
Shiu-Hua Huang, Jhonghe City TW
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20120329129 | MAGNETIC NANOPARTICLE WITH BIOCOMPATIBILITY - A magnetic nanoparticle is provided in the disclosure. The magnetic nanoparticle includes a magnetic nanoparticle; a biocompatible polymer of the following formula (II) covalently coupled to the magnetic nanoparticle, wherein R | 12-27-2012 |
Te-Li Huang, Jhonghe City TW
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20100006319 | CABLE STRUCTURE - The present invention provides an improved cable structure, which comprising: a first conductor; a second conductor at one side of the first conductor; a coating unit covered externally onto the first and second conductors, so that the central distance of the first and second conductors is a stable distance; moreover, one surface of the coating unit is provided with a plane portion, and the other surface provided with a depressed portion between the first and second conductors. Thus, the cable could be used to balance efficiently the impedance and realize zero delay difference during HF signal transmission. | 01-14-2010 |
20100006321 | VIDEO/AUDIO SIGNAL TRANSMISSION CABLE - The present invention disclose a video/audio signal transmission cable comprising a first and a second conducting wires respectively having conductor and insulator, and the first and second conducting wires are neighborly installed, wherein each conductor has a core being made of steel material and being electroplated with a high conductive metal plating layer on the outside surface thereof; a first enclosing layer being made of insulation material is used to enclose the outsides of the first and second conducting wires; and a second enclosing layer being made of insulation material is used to enclose the outside of the first enclosing layer. It is then through the material characteristics of the core and high conducting metal plating layer to have the signal equalization effect during high frequency and low frequency transmissions thereby achieving the better quality and stable transmission effect. | 01-14-2010 |
Tsung-Jen Huang, Jhonghe City TW
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20100181389 | Smell Producing and Outputting Device - A smell producing and outputting device capable of providing a certain smell correspondingly to a certain image or a certain sound is disclosed. The disclosed smell producing and outputting device comprises: an audio processing unit for detecting an image signal or a sound signal; and a smell producing and outputting unit including a smell storing reservoir, a compression part, a driving part, and an outside shell, wherein the smell storing reservoir, the compression part, the driving part are received by the outside shell, and the driving part is electrically connected with the audio processing unit. When a certain image signal or a certain sound signal is received by the audio processing unit, the audio processing unit outputs a driving signal to the driving part, for changing the position of the compression part. Thus, a smell is driven out from the smell producing and outputting unit and distributed in the atmosphere. | 07-22-2010 |
Yao-Lun Huang, Jhonghe City TW
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20100309684 | FLEXIBLE LIGHT-GUIDING MODULE WITH WATERPROOF FUNCTION - A flexible light-guiding module with waterproof function includes a flexible light-guiding film, a light-reflecting element and a light-generating element. The light-reflecting element is disposed on a bottom side of the flexible light-guiding film. The light-generating element is embedded into the flexible light-guiding film, and the light-generating element has a circuit substrate and at least one light-generating chip electrically disposed on the circuit substrate. Hence, the light-generating element is embedded into the flexible light-guiding film, so that the light-generating element is waterproof. In addition, the present invention can be attached to any plane or curved surface by using the flexible light-guiding film, so that the application field of the present invention is very extensive. Moreover, the flexible light-guiding film and the light-reflecting element are integrally formed in order to decrease manufacturing cost of the present invention. | 12-09-2010 |