Hsueh, CA
Aaron J.w. Hsueh, Stanford, CA US
Patent application number | Description | Published |
---|---|---|
20090298770 | MAMMALIAN RELAXIN RECEPTORS - High affinity relaxin receptors, polypeptide compositions related thereto, as well as nucleotide compositions encoding the same, are provided. These proteins, herein termed LGR7 and LGR8, are orphan leucine-repeat-containing, G protein-coupled receptors. These receptors have a wide and a unique tissue expression pattern. The receptors, particularly soluble fragments thereof, are useful as therapeutic agents capable of inhibiting the action of relaxin and InsL3. The receptors and fragments thereof also find use in the screening and design of relaxin agonists and antagonists. Conditions treatable with relaxin agonists or antagonists include prevention or induction of labor, treatment of endometriosis, treatment of skin conditions such as scleroderma that require collagen or extracellular matrix remodelling. Additionally, relaxin has been implicated in the dilation of blood vessels' smooth muscle cells directly and through release of nitric oxide and atrial natriuretic peptide. Relaxin has also been used in the treatment of severe chronic pain, particularly pain arising from stretching, swelling, or dislocation of tissues. | 12-03-2009 |
20100191040 | Manipulation of ovarian primordial follicles - Methods are provided for activating dormant ovarian primordial follicles in a mammal to promote development to preovulatory follicles. | 07-29-2010 |
20110052599 | Facilitation of Oocyte, Zygote and Pre-Implantation Embryo Maturation - Compositions and methods are provided for enhancing the survival and promoting the maturation of mammalian oocytes, zygotes and preimplantation embryos. BDNF or BDNF agonists may be administered to an individual, or to cells in vitro, to enhance cellular maturation, embryo growth and fertilization. Accordingly, compositions comprising BDNF are herein presented for use in promoting in vivo oocyte maturation as well as for use as a component in culture media for promoting preimplantation maturation of zygotes and embryos, for instance, for use with in vitro fertilization procedures and for the production of stem cells. Additionally, compounds that interfere with the binding of BDNF to its receptor may be administered to an individual to prevent oocyte maturation, thereby acting as a contraceptive. The BNDF receptor, TrkB, and BDNF also find use in the screening and design of agonists and antagonists for use in the methods of the invention. | 03-03-2011 |
20120066775 | Stresscopins and their Uses - The invention provides novel nucleic acids and polypeptides, referred to herein as stresscopin 1 and stresscopin 2, which preferentially activate the CRH-R2 receptor over the R1 receptor. Stresscopins, analogs and mimetics, and related CRH-R2 agonists suppress food intake and heat-induced edema; but do not induce substantial release of ACTH. Stresscopin also finds use in the recovery phase of stress responses, as an anti-inflammatory agent, as a hypotensive agent, as a cardioprotective agent, and in the treatment of psychiatric and anxiolytic disorders. Stresscopin nucleic acid compositions find use in identifying homologous or related proteins and the DNA sequences encoding such proteins; in producing compositions that modulate the expression or function of the protein; and in studying associated physiological pathways. | 03-15-2012 |
20140314762 | Stimulation of Ovarian Follicle Development and Oocyte Maturation - Methods are provided for stimulating ovarian preantral and antral follicles in a mammal. | 10-23-2014 |
20150025125 | Stresscopins and their Uses - The invention provides novel nucleic acids and polypeptides, referred to herein as stresscopin 1 and stresscopin 2, which preferentially activate the CRH-R2 receptor over the R1 receptor. Stresscopins, analogs and mimetics, and related CRH-R2 agonists suppress food intake and heat-induced edema; but do not induce substantial release of ACTH. Stresscopin also finds use in the recovery phase of stress responses, as an anti-inflammatory agent, as a hypotensive agent, as a cardioprotective agent, and in the treatment of psychiatric and anxiolytic disorders. Stresscopin nucleic acid compositions find use in identifying homologous or related proteins and the DNA sequences encoding such proteins; in producing compositions that modulate the expression or function of the protein; and in studying associated physiological pathways. | 01-22-2015 |
20150231209 | STIMULATION OF OVARIAN FOLLICLE DEVELOPMENT AND OOCYTE MATURATION - Methods are provided for stimulating ovarian follicles in a mammal through disruption of the Hippo signaling pathway. | 08-20-2015 |
20150307571 | Stresscopins and their Uses - The invention provides novel nucleic acids and polypeptides, referred to herein as stresscopin 1 and stresscopin 2, which preferentially activate the CRH-R2 receptor over the R1 receptor. Stresscopins, analogs and mimetics, and related CRH-R2 agonists suppress food intake and heat-induced edema; but do not induce substantial release of ACTH. Stresscopin also finds use in the recovery phase of stress responses, as an anti-inflammatory agent, as a hypotensive agent, as a cardioprotective agent, and in the treatment of psychiatric and anxiolytic disorders. Stresscopin nucleic acid compositions find use in identifying homologous or related proteins and the DNA sequences encoding such proteins; in producing compositions that modulate the expression or function of the protein; and in studying associated physiological pathways. | 10-29-2015 |
Angela M. Hsueh, Diamond Bar, CA US
Patent application number | Description | Published |
---|---|---|
20100059455 | METHODS AND SYSTEMS FOR DISINFECTING POTABLE WATER SUPPLIES - The invention described herein contains two aspects, usable together or separately, that address the needs in the art described above, namely a first aspect that relates to the provision of a transportable water purification system that can be contained on a passenger transport vehicle, and that can use, but does not require, continuous, real-time monitoring, and a second aspect that relates to the use of UV purification of the water as it is uploaded to the passenger transport vehicle after a single pass through the UV chamber. | 03-11-2010 |
20130175452 | METHODS AND SYSTEMS FOR DISINFECTING POTABLE WATER SUPPLIES - The invention described herein contains two aspects, usable together or separately, that address the needs in the art described above, namely a first aspect that relates to the provision of a transportable water purification system that can be contained on a passenger transport vehicle, and that can use, but does not require, continuous, real-time monitoring, and a second aspect that relates to the use of UV purification of the water as it is uploaded to the passenger transport vehicle after a single pass through the UV chamber. | 07-11-2013 |
20140137319 | TOILET CONCEPTS - Embodiments described herein relate to quick release toilet concepts, which can be useful particularly on-board aircraft and other passenger transport vehicles. Further embodiments relate to improved shroud components for toilets that help reduce splash. Further embodiments also relate to flushing systems for use with vacuum toilets. | 05-22-2014 |
Brian Hsueh, Pacifica, CA US
Patent application number | Description | Published |
---|---|---|
20140276257 | METHOD AND SYSTEM FOR REGULATING CORE BODY TEMPERATURE - A method for maintaining and/or increasing body temperature of a patient may involve delivering heat to a first location on a limb of the patient, delivering heat to a second location on the limb, apart from the first location, and applying intermittent compression to a third location on the limb, located between the first location and the second location. A device for maintaining and/or increasing body temperature of a patient may include a sleeve for positioning over at least part of one of the patient's limbs, first and second heat delivery members coupled with the sleeve, and an intermittent compression member coupled with the sleeve between the first and second heat delivery members. | 09-18-2014 |
Chien-Lan Hsueh, Campbell, CA US
Patent application number | Description | Published |
---|---|---|
20130210193 | ReRAM STACKS PREPARATION BY USING SINGLE ALD OR PVD CHAMBER - Systems and methods for preparing resistive switching memory devices such as resistive random access memory (ReRAM) devices wherein both oxide and nitride layers are deposited in a single chamber are provided. Various oxide and nitride based layers in the ReRAM device such as the switching layer, current-limiting layer, and the top electrode (and optionally the bottom electrode) are deposited in the single chamber. By fabricating the ReRAM device in a single chamber, throughput is increased and cost is decreased. Moreover, processing in a single chamber reduces device exposure to air and to particulates, thereby minimizing device defects. | 08-15-2013 |
20130214236 | USING TiON AS ELECTRODES AND SWITCHING LAYERS IN ReRAM DEVICES - A single TiON film is used to form a ReRAM device by varying the oxygen and nitrogen content throughout the device to form the electrodes and switching layer. A ReRAM device that can be formed in a single deposition chamber is also disclosed. The ReRAM device can be formed by forming a first titanium nitride layer, forming atitanium oxynitride-titanium oxide-titanium oxynitride layer, and then forming a second titanium nitride. | 08-22-2013 |
20140103284 | ReRAM Cells Including TaXSiYN Embedded Resistors - Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and a resistive switching layer connected in series with this resistor. The resistor is configured to prevent over-programming of the cell by limiting electrical currents through the resistive switching layer. Unlike the resistive switching layer, which changes its resistance in order to store data, the embedded resistor maintains a substantially constant resistance during operation of the cell. The embedded resistor is formed from tantalum nitride and silicon nitride. The atomic ratio of tantalum and silicon may be specifically selected to yield resistors with desired densities and resistivities as well as ability to remain amorphous when subjected to various annealing conditions. The embedded resistor may also function as a diffusion barrier layer and prevent migration of components between one of the electrodes and the resistive switching layer. | 04-17-2014 |
20140166956 | Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer - A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and lifetime by custom tailoring the average concentration of defects in the resistive switching film and methods of forming the same. The nonvolatile memory element includes a first electrode layer, a second electrode layer, and a resistive switching layer disposed between the first electrode layer and the second electrode layer. The resistive switching layer comprises a first sub-layer and a second sub-layer, wherein the first sub-layer has more defects than the first sub-layer. A method includes forming a first sub-layer on the first electrode layer by a first ALD process and forming a second sub-layer on the first sub-layer by a second ALD process, where the first sub-layer has a different amount of defects than the second sub-layer. | 06-19-2014 |
20140175361 | Resistive Switching Layers Including Hf-Al-O - Provided are resistive random access memory (ReRAM) cells having switching layers that include hafnium, aluminum, oxygen, and nitrogen. The composition of such layers is designed to achieve desirable performance characteristics, such as low current leakage as well as low and consistent switching currents. In some embodiments, the concentration of nitrogen in a switching layer is between about 1 and 20 atomic percent or, more specifically, between about 2 and 5 atomic percent. Addition of nitrogen helps to control concentration and distribution of defects in the switching layer. Also, nitrogen as well as a combination of two metals helps with maintaining this layer in an amorphous state. Excessive amounts of nitrogen reduce defects in the layer such that switching characteristics may be completely lost. The switching layer may be deposited using various techniques, such as sputtering or atomic layer deposition (ALD). | 06-26-2014 |
20140264223 | Metal Aluminum Nitride Embedded Resistors for Resistive Random Memory Access Cells - Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions. | 09-18-2014 |
20140264231 | Confined Defect Profiling within Resistive Random Memory Access Cells - Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A stack including a defect source layer, a defect blocking layer, and a defect acceptor layer disposed between the defect source layer and the defect blocking layer may be subjected to annealing. During the annealing, defects are transferred in a controllable manner from the defect source layer to the defect acceptor layer. At the same time, the defects are not transferred into the defect blocking layer thereby creating a lowest concentration zone within the defect acceptor layer. This zone is responsible for resistive switching. The precise control over the size of the zone and the defect concentration within the zone allows substantially improvement of resistive switching characteristics of the ReRAM cell. In some embodiments, the defect source layer includes aluminum oxynitride, the defect blocking layer includes titanium nitride, and the defect acceptor layer includes aluminum oxide. | 09-18-2014 |
20140322884 | Nonvolatile resistive memory element with a silicon-based switching layer - A nonvolatile resistive memory element includes a novel switching layer and methods of forming the same. The switching layer includes a material having bistable resistance properties and formed by bonding silicon to oxygen or nitrogen. The switching layer may include at least one of SiO | 10-30-2014 |
20140357046 | ReRAM Cells Including TaXSiYN Embedded Resistors - Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and a resistive switching layer connected in series with this resistor. The resistor is configured to prevent over-programming of the cell by limiting electrical currents through the resistive switching layer. Unlike the resistive switching layer, which changes its resistance in order to store data, the embedded resistor maintains a substantially constant resistance during operation of the cell. The embedded resistor is formed from tantalum nitride and silicon nitride. The atomic ratio of tantalum and silicon may be specifically selected to yield resistors with desired densities and resistivities as well as ability to remain amorphous when subjected to various annealing conditions. The embedded resistor may also function as a diffusion barrier layer and prevent migration of components between one of the electrodes and the resistive switching layer. | 12-04-2014 |
20140377931 | Metal Aluminum Nitride Embedded Resistors for Resistive Random Memory Access Cells - Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions. | 12-25-2014 |
20150034898 | Confined Defect Profiling within Resistive Random Memory Access Cells - Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A stack including a defect source layer, a defect blocking layer, and a defect acceptor layer disposed between the defect source layer and the defect blocking layer may be subjected to annealing. During the annealing, defects are transferred in a controllable manner from the defect source layer to the defect acceptor layer. At the same time, the defects are not transferred into the defect blocking layer thereby creating a lowest concentration zone within the defect acceptor layer. This zone is responsible for resistive switching. The precise control over the size of the zone and the defect concentration within the zone allows substantially improvement of resistive switching characteristics of the ReRAM cell. In some embodiments, the defect source layer includes aluminum oxynitride, the defect blocking layer includes titanium nitride, and the defect acceptor layer includes aluminum oxide. | 02-05-2015 |
20150060753 | CONTROLLING COMPOSITION OF MULTIPLE OXIDES IN RESISTIVE SWITCHING LAYERS USING ATOMIC LAYER DEPOSITION - A method of fabricating a resistive random access memory (ReRAM) cell may include forming a set of nanolaminate structures over an electrode, such that each structure includes at least one first element oxide layer and at least one second element oxide layer. The overall set is operable as a resistive switching layer in a ReRAM cell. In this set, an average atomic ratio of the first element to the second element is different in at least two nanolaminate structures. This ratio may be less in nanolaminate structures that are closer to electrodes than in the middle nanolaminate structures. Alternatively, this ratio may increase from one end of the set to another. The first element may be less electronegative than the second elements. The first element may be hafnium, while the second element may be one of zirconium, aluminum, titanium, tantalum, or silicon. | 03-05-2015 |
20150176122 | Low-temperature growth of complex compound films - Ternary oxides, nitrides and oxynitrides of the form (a)(b)O | 06-25-2015 |
20150179316 | Methods of forming nitrides at low substrate temperatures - Provided are methods of forming nitrides at low substrate temperatures, such as less than 500° C. or even less than 400° C. The nitrides can be formed using atomic layer deposition (ALD), chemical vapor deposition (CVD), and other like techniques. The low substrate temperatures allow using various temperature sensitive precursors, such as Tetrakis(DiMethylAmino)Hafnium (i.e., TDMAHf) or TertiaryButylimido-Tris(DiEthylamino)Tantalum (i.e., TBTDET), to form nitrides of components provided by these precursors. Furthermore, the low temperatures preserve other structures present on the substrate prior to forming the nitride layers. Nitrogen-containing precursors with low dissociation energy are used in these methods. Some examples of such nitrogen-containing precursors include hydrazine (N | 06-25-2015 |
20150179937 | Metal Organic Chemical Vapor Deposition of Embedded Resistors for ReRAM Cells - Provided are resistive random access memory (ReRAM) cells and methods of fabricating them using metal organic chemical vapor deposition (MOCVD). Specifically, MOCVD is used to form an embedded resistor that includes two different nitrides. The first nitride may be more conductive than the second nitride. The concentrations of these nitrides may vary throughout the thickness of the embedded resistor. This variability may be achieved by changing flow rates of MOCVD precursors during formation of the embedded resistor. The second nitride may be concentrated in the middle of the embedded resistor, while the first nitride may be present at interface surfaces of the embedded resistor. As such, the first nitride protects the second nitride from exposure to other components and/or environments and prevents oxidation of the second nitride. Controlling the distribution of the two nitrides within the embedded resistor allows using new materials and achieving consistent performance of the embedded resistor. | 06-25-2015 |
20150184287 | Systems and Methods for Parallel Combinatorial Vapor Deposition Processing - Embodiments described herein provide systems and methods for performing vapor deposition processes on substrates. A housing defining a processing chamber is provided. A substrate support is positioned within the processing chamber and configured to support a substrate. A fluid supply system including a plurality precursor sources is included. A fluid conduit assembly is coupled to the fluid supply system and configurable to selectively expose a first site-isolated region defined on the substrate to the respective precursors of a first and a second of the plurality of precursor sources and selectively expose a second site-isolated region defined on the substrate to the respective precursors of a third and a fourth of the plurality of precursor sources. | 07-02-2015 |
20160133691 | DRAM MIMCAP Stack with MoO2 Electrode - Steps are taken to ensure that the bulk dielectric layer exhibits a crystalline phase before the deposition of a second electrode layer. The crystalline phase of the bulk dielectric layer facilitates the crystallization of the second electrode layer at lower temperature during a subsequent anneal treatment. In some embodiments, one or more interface layers are inserted between the bulk dielectric layer and the first electrode layer and/or the second electrode layer. The interface layers may act as an oxygen sink, facilitate the crystallization of the electrode layer at lower temperature during a subsequent anneal treatment, or provide barriers to leakage current through the film stack. | 05-12-2016 |
20160133837 | Low-Temperature Deposition of Metal Silicon Nitrides from Silicon Halide Precursors - Metal silicon nitride nanolaminates are formed at temperatures of 200-400 C by alternating ALD monolayers or thin CVD layers of metal nitride and silicon nitride. The silicon nitride layers are formed from a silicon halide precursor, causing nitrogen bonds to replace the halogen bonds, which is a lower-energy reaction than bonding nitrogen to elemental silicon. The silicon content, and thereby the resistivity, of the nanolaminate can be tuned by either a sub-saturation dose of the silicon halide precursor (forming ALD sub-monolayers) or by the relative number of metal nitride and silicon nitride layers. Resistivities between 1 and 500 Ω·cm, suitable for ReRAM embedded resistors, can be achieved. Some of the nanolaminates can function as combination embedded resistors and electrodes. | 05-12-2016 |
Chih Hsueh, Cupertino, CA US
Patent application number | Description | Published |
---|---|---|
20090158085 | POWER SAFE TRANSLATION TABLE OPERATION IN FLASH MEMORY - Systems and/or methods that provide for the accuracy of address translations in a memory system that decouples the system address from the physical address. Address-modifying transactions are recorded in a non-volatile write buffer to couple the last-in-time translation physical address/location with the current translated physical location/address. In addition, integrity check protection may be applied to the translation and to the written data to limit the amount of data that may be lost in the event of a failure/error occurring during the write operation. Transaction recording and integrity check protection allows for recovery of write operations that may not have fully completed due to the failure/error. | 06-18-2009 |
20090164700 | EFFICIENT MEMORY HIERARCHY IN SOLID STATE DRIVE DESIGN - Systems and methods for improving the performance and reliability of flash memory solid state drive devices are described herein. A flash memory array component stores data. A memory hierarchy component transfers data between the host and the flash memory array component. The memory hierarchy component includes a level one (“L1”) cache coupled to a merge buffer, the flash memory array component, and the host. The merge buffer is coupled to the flash memory array component. The L1 cache and merge buffer include volatile memory, and the host is coupled to the merge buffer and flash memory array component. The memory hierarchy component includes a write component and a read component. The write component writes data to at least one of the L1 cache, merge buffer, or flash memory array component. The read component reads data from at least one of the L1 cache, merge buffer, or flash memory array component. | 06-25-2009 |
Chun-Jen Hsueh, Pasadena, CA US
Patent application number | Description | Published |
---|---|---|
20160131564 | Systems and Methods for Determining the Effective Toughness of a Material and for Implementing Materials Possessing Improved Effective Toughness Characteristics - Systems and methods in accordance with embodiments of the invention determine the effective toughness of a given material, and also implement materials possessing improved effective toughness values. In one embodiment, a method of determining the effective toughness of a material includes: causing a crack to propagate through the material; where the relative constant velocity and the relative overall direction are prescribed and maintained for the duration of the propagation of the crack through the material; measuring the energy release rate of the crack as it propagates through the material; and defining the effective toughness of the material as the maximum value of the measured energy release rate. | 05-12-2016 |
Frank Chijeen Hsueh, Sunnyvale, CA US
Patent application number | Description | Published |
---|---|---|
20160094574 | DETERMINING MALWARE BASED ON SIGNAL TOKENS - Example embodiments disclosed herein relate to determining malware. A set of tokens is generated from an application under test, A set of signal tokens is generated from the set of tokens. A likelihood of malware is determined for the application under test based on the signal tokens and a signal token database. | 03-31-2016 |
Jason Hsueh, Menlo Park, CA US
Patent application number | Description | Published |
---|---|---|
20130262218 | Incorporating Delayed Feedback In Performance-Based Content Distribution - Systems, methods, and computer-readable medium allow incorporation of delayed feedback in performance-based content delivery. A computer-implemented method includes receiving historical data indicative of performance of at least one first content item, determining a statistical distribution of the performance over time, applying the statistical distribution to a second content item to obtain an estimated performance of a second content item over time, and determining a pricing value of the second content item based on the estimated performance. | 10-03-2013 |
Jay-Jen Hsueh, San Jose, CA US
Patent application number | Description | Published |
---|---|---|
20160140440 | REAL-TIME PROACTIVE MACHINE INTELLIGENCE SYSTEM BASED ON USER AUDIOVISUAL FEEDBACK - Disclosed herein are techniques for implementing a machine intelligence computer system that can proactively monitor user audiovisual feedbacks as ques for improving the machine learning and predictive data analytical processes. Based on the real-time feedbacks, the introduced proactive machine intelligence system (PMIS) can dynamically revise (e.g., by assigning different weights) and/or filter the gathered input data for machine learning purposes. The PMIS can also dynamically adjust the machine learning algorithms adapted in the predictive models based on user real-time feedbacks. | 05-19-2016 |
John Hsueh, Fremont, CA US
Patent application number | Description | Published |
---|---|---|
20110075994 | System and Method for Video Storage and Retrieval - A method and system for providing functionality similar to that found in a DVR but mostly or completely contained within a television set is disclosed. A memory stores packets representing a portion of one or more programs in the broadcast stream and allows a viewer to replay that portion of the program using some of the functions available on a DVR, such as pause, rewind, and fast forward. The packet stream is divided into groups of equal length and fixed time duration, for example one second, and stored in sequential order in the memory. This allows for the storage and retrieval of content without the need for an index file, without adding a timestamp to the program data packets, and without separating the audio portion from the video portion of the program and then having to synchronize and recombine them. | 03-31-2011 |
Kuey-Lung Hsueh, Milpitas, CA US
Patent application number | Description | Published |
---|---|---|
20080316661 | Electrostatic Discharge Immunizing Circuit without Area Penalty - A chip includes a core circuit, a main electrostatic discharge immunizing circuit, and a secondary electrostatic discharge immunizing circuit. The secondary electrostatic discharge immunizing circuit is disposed beneath a core power ring formed between the core circuit and the main electrostatic discharge immunizing circuit for reaching the aim of protecting the core circuit from damage by electrostatic discharges without area penalty of the chip. Both the main electrostatic discharge immunizing circuit and the secondary electrostatic discharge immunizing circuit include a power clamp and a plurality of current limiters, and keep electrostatic currents from reaching the core circuit with the aid of the power clamp. | 12-25-2008 |
Kyai Hsueh, Fremont, CA US
Patent application number | Description | Published |
---|---|---|
20110190862 | STENT DELIVERY SYSTEM - A stent delivery system comprises a stent having a first connector disposed on a stent proximal end, and a pusher wire having a second connector disposed on a pusher wire distal end, wherein the first and second connectors are configured to releasably attach to each other. | 08-04-2011 |
Pang-Yu Hsueh, San Jose, CA US
Patent application number | Description | Published |
---|---|---|
20130210747 | Methods and Therapeutics Comprising Ligand-Targeted ELPs - Disclosed herein are novel methods and compositions for targeting drug delivery systems to specific cells. One aspect relates to a drug delivery system comprising an elastin-like peptide (ELP) component and a ligand selected from the group consisting of mIgA and knob capable of either drug encapsulation or drug attachment. Further aspects relate to drug delivery systems comprising an elastin-like peptide (ELP) component and a ligand; wherein the ligand specifically binds to a receptor selected from the group consisting of CAR and pIgR. Further aspects include the novel transcytosing properties of the elastin-like peptide and the ligand, knob. Also provided are methods and pharmaceutical compositions comprising the disclosed therapeutics. | 08-15-2013 |
20160017004 | METHODS AND THERAPEUTICS COMPRISING LIGAND-TARGETED ELPs - Disclosed herein are novel methods and compositions for targeting drug delivery systems to specific cells. One aspect relates to a drug delivery system comprising an elastin-like peptide (ELP) component and a ligand selected from the group consisting of mIgA and knob capable of either drug encapsulation or drug attachment. Further aspects relate to drug delivery systems comprising an elastin-like peptide (ELP) component and a ligand; wherein the ligand specifically binds to a receptor selected from the group consisting of CAR and pIgR. Further aspects include the novel transcytosing properties of the elastin-like peptide and the ligand, knob. Also provided are methods and pharmaceutical compositions comprising the disclosed therapeutics. | 01-21-2016 |
Pang-Yu Hsueh, San Gabriel, CA US
Patent application number | Description | Published |
---|---|---|
20150238431 | ICAM-1 TARGETING ELPS - Provided herein are therapeutic agents comprising an elastin-like peptide (ELP) component and a ligand that specifically targets and binds an ICAM-1 receptor. In one aspect, the ELP comprises, or alternatively consists essentially of, or yet further consists of one or more sequence(s) designated S48I48 and/or mICMA-1 SI and/or hICAM-1 S1 or biological equivalents thereof. In a further aspect, the ELP/ligand composition further comprises a therapeutic agent. In one aspect, the therapeutic agent is specific to the treatment or amelioration of symptoms associated with autoimmune disorders such as SjS. | 08-27-2015 |
Paul Hsueh, Concord, CA US
Patent application number | Description | Published |
---|---|---|
20080235939 | Manufacturing Method For Micro-SD Flash Memory Card - A method for fabricating MicroSD devices includes forming a PCB panel having multiple PCB regions arranged in parallel rows. Passive components are attached by conventional surface mount technology (SMT) techniques. IC chips, including a MicroSD controller chip and a flash memory chip, are attached to the PCB by wire bonding or other chip-on-board (COB) technique. A molded layer is then formed over the IC chips and passive components using a mold that prevents formation of plastic on the upper surface of each PCB. The panel is then singulated using one of a laser cutting method, an abrasive water jet cutting method, and a mechanical grinding method such that the resulting PCB substrate and plastic housing have the width, height and length specified by MicroSD specifications. A front edge chamfer process is then performed. | 10-02-2008 |
20090203168 | Manufacturing Method for a Secure-Digital (SD) Flash Card with Slanted Asymmetric Circuit Board - A flash-memory device has a printed-circuit board assembly (PCBA) with a PCB with a flash-memory chip and a controller chip. The controller chip includes an input/output interface circuit to an external computer over a Secure-Digital (SD) interface, and a processing unit to read blocks of data from the flash-memory chip. The PCBA is encased inside an upper case and a lower case, with SD contact pads on the PCB that fit through contact openings in the upper case. Supporting end ribs under each of the SD contact pads and middle ribs support the PCB at a slanted angle to the centerline of the device. The PCB slants upward at the far end to allow more thickness for the chips mounted to the bottom surface of the PCB, and slants downward at the insertion end to position the SD contact pads near the centerline. | 08-13-2009 |
Philip Hsueh, Fremont, CA US
Patent application number | Description | Published |
---|---|---|
20110157648 | Data Pump For Printing - Systems and techniques for printing on a workpiece. In one implementation, a data pump is used to create a packet of image data for a print head assembly. The data pump includes multiple state machines to receive image data from an image buffer on a computer, and a serializer to gather image data from each of the state machines. Each of the state machines is configured to send image data to the serializer at a different instance in time. The serializer is configured to arrange the gathered image data according to when the serializer received the image data from each of the state machines. The data pump also includes an optical fiber communication interface to connect with a communication channel. | 06-30-2011 |
Rex Hsueh, Cupertino, CA US
Patent application number | Description | Published |
---|---|---|
20100306448 | CACHE AUTO-FLUSH IN A SOLID STATE MEMORY DEVICE - A device, system and method in which data in a write cache, that must at some point be written to non-volatile memory, is written to non-volatile memory after expiration of a threshold time period during which no new host commands are received. If either the last dirty entry is written back or a host command is received during the write-back process, the time threshold time period and auto-flush process is restarted. | 12-02-2010 |
Ronald Hsueh, Huntington Beach, CA US
Patent application number | Description | Published |
---|---|---|
20120181775 | BICYCLE REAR WHEEL AXLE POSITIONING DEVICE - A bicycle rear wheel axle positioning device includes a rod having a curved surface and a flat surface. The rod is connected with a seat stay and a chain stay. A clamp member has a clamp portion and the rod extends through a passage in the clamp portion, wherein the periphery of the passage is corresponding to the curved surface and the flat surface. A first resilient portion and a second resilient portion extend from the clamp portion, respectively. The rear wheel axle is inserted into one side of the clamp portion and the clamp member is movable along the rod. The other side of the clamp portion includes a protrusion which is engaged with one of positioning grooves defined in the curved surface of the rod when the axle is moved to a desired position and a fastening member extends through the two resilient portions. | 07-19-2012 |
Sheng-Hsiung Hsueh, San Jose, CA US
Patent application number | Description | Published |
---|---|---|
20090052248 | FLASH MEMORY ARRAY SYSTEM INCLUDING A TOP GATE MEMORY CELL - A memory system includes memory cells arranged in sectors. A decoder corresponding to a sector disables memory cells having a defective top gate. The decoder may include a low voltage or high voltage latch for the disabling. A top gate handling algorithm is included. The memory system may include dynamic top gate coupling. A programming algorithm and waveforms with top gate handling is included. | 02-26-2009 |
20090067239 | FLASH MEMORY ARRAY SYSTEM INCLUDING A TOP GATE MEMORY CELL - A memory system includes memory cells arranged in sectors. A decoder corresponding to a sector disables memory cells having a defective top gate. The decoder may include a low voltage or high voltage latch for the disabling. A top gate handling algorithm is included. The memory system may include dynamic top gate coupling. A programming algorithm and waveforms with top gate handling is included. | 03-12-2009 |
20090323415 | FLASH MEMORY ARRAY SYSTEM INCLUDING A TOP GATE MEMORY CELL - A memory system includes memory cells arranged in sectors. A decoder corresponding to a sector disables memory cells having a defective top gate. The decoder may include a low voltage or high voltage latch for the disabling. A top gate handling algorithm is included. The memory system may include dynamic top gate coupling. A programming algorithm and waveforms with top gate handling is included. | 12-31-2009 |
20110122693 | FLASH MEMORY ARRAY SYSTEM INCLUDING A TOP GATE MEMORY CELL - A memory system includes memory cells arranged in sectors. A decoder corresponding to a sector disables memory cells having a defective top gate. The decoder may include a low voltage or high voltage latch for the disabling. A top gate handling algorithm is included. The memory system may include dynamic top gate coupling. A programming algorithm and waveforms with top gate handling is included. | 05-26-2011 |
Steve Hsueh, Palo Alto, CA US
Patent application number | Description | Published |
---|---|---|
20120030469 | Streamlined CSR Generation, Certificate Enrollment, and Certificate Delivery - The process of acquiring SSL certificates for enterprise SSL customers is improved by reducing the number of steps used to acquire the SSL certificate and streamlining the process. An on-line CSR generator on the certificate enrollment form is used to submit the customer information (i.e. Common Name, Organizational Unit, Organization, City/Locality, State/Province, and Country Code) and generate the CSR. By making the CSR generation part of the enrollment process, the administrator can use the same enrollment form to submit the customer information along with the contact information pertinent to the enterprise. | 02-02-2012 |
Wai Hsueh, Newark, CA US
Patent application number | Description | Published |
---|---|---|
20150231368 | RADIAL AND TRANS-ENDOCARDIAL DELIVERY CATHETER - A needle-injection catheter includes a catheter body having a distal end, a proximal end, a stiff proximal portion, a flexible distal portion, and a delivery lumen extending therethrough. In a first embodiment, a straight injection needle extends coaxially from a distal tip of the flexible portion of the catheter body, and a plurality of penetration limiting elements positioned circumferentially about a base of the straight injection needle and configured to fold radially inwardly against a shaft of the needle when constrained in a tubular lumen and to extend radially outwardly when unconstrained. In a second embodiment, a helical needle extends from the distal tip of the flexible portion of the catheter body. The helical needle has at least one helical delivery lumen connected to receive an injectable substance from the delivery lumen of the catheter body. | 08-20-2015 |
Walter C. Hsueh, San Mateo, CA US
Patent application number | Description | Published |
---|---|---|
20120102553 | Mixed-Mode Authentication - Techniques for mixed-mode authentication are described. In one or more embodiments, an authentication service may be implemented to selectively configure and issue authentication tokens based upon an optional secure mode that enables enhanced security. Clients may be provided with an option to choose between an insecure mode and a secure mode for authentications. Based on this choice, tokens may be configured to include an indication of whether the secure mode is disabled or enabled. When secure mode is disabled, an insecure token valid for both secure sites and other sites is issued to a client when the client is authenticated. When the optional secure mode is enabled, both secure and insecure tokens are provided to the client. The authentication services and/or other services may be configured to reject an insecure token when secure mode is enabled to prevent unauthorized use of a stolen token to access secure resources. | 04-26-2012 |
20140341527 | Creating, Editing, and Publishing a Video Using a Mobile Device - A video is produced using a mobile device that includes an integrated camera. Multiple video clips are captured using the camera. Data is generated that describes a video project. The video project includes the multiple video clips. The video project data and the multiple video clips are sent to a server. A pointer to the video project stored in a playable format is received from the server. | 11-20-2014 |
20150071614 | Creating, Editing, and Publishing a Video Using a Mobile Device - Video is processed. Multiple raw video clips and data that describes a video project that includes the multiple raw video clips are received from a mobile device. The multiple raw video clips were captured using an integrated camera of the mobile device. The multiple raw video clips are processed to generate multiple intermediate video clips. The multiple intermediate video clips all have a same first video resolution and a same first aspect ratio. The multiple intermediate video clips are concatenated, in an order specified by the video project data, to generate a concatenated video. | 03-12-2015 |
Wayne Y.w. Hsueh, San Jose, CA US
Patent application number | Description | Published |
---|---|---|
20110223729 | INTEGRATED CIRCUIT INCLUDING POWER DIODE - A method of fabricating a semiconductor integrated circuit including a power diode includes providing a semiconductor substrate of first conductivity type, fabricating a integrated circuit such as a CMOS transistor circuit in a first region of the substrate, and fabricating a power diode in a second region in the semiconductor substrate. Dielectric material is formed between the first region and the second regions thereby providing electrical isolation between the integrated circuit in the first region and the power diode in the second region. The power diode can comprise a plurality of MOS source/drain elements and associated gate elements all connected together by one electrode of the diode, and a semiconductor layer in the second region can function as another source/drain of the power diode. | 09-15-2011 |
Wenpeng Hsueh, San Ramon, CA US
Patent application number | Description | Published |
---|---|---|
20160096136 | GAS SEPARATION CARTRIDGE - A gas separation cartridge including a housing comprising an inlet port for an air sample to enter; a top cover attached to the housing; an upper cavity comprising individual chambers comprised of a chemical or an absorbent or a mixture thereof attached to the top cover wherein each end of each chamber has an opening; a bottom cover attached to the upper cavity, wherein the bottom cover comprises a lower cavity, a separate opening for an air sample traveling from an individual chamber to pass through, and a separate opening for an air sample that does not pass through an individual chamber; and a base upon which the bottom cover of the cartridge is seated, wherein the base has an exit port. | 04-07-2016 |
20160128289 | HYDROPONIC SYSTEM WITH ACTUATED ABOVE-PLANT PLATFORM - A hydroponic growth system may be integrated into a programmable system providing for the growth of plants. An upper section of a system may include a lighting system able to vary lighting characteristics such as the intensity or spectral content of light provided to the plants and atmospheric systems to control the temperature, flow, or humidity of air around the plants that are mounted on an actuated platform. A control system may execute a program to control the available systems including the actuated above-plant platform to programmably control the height or heights of the systems above plants. | 05-12-2016 |
Yu-Li Hsueh, Mountain View, CA US
Patent application number | Description | Published |
---|---|---|
20090074123 | Phase/Frequency Detector and Charge Pump Architecture for Referenceless Clock and Data Recovery (CDR) Applications - A stream of data may flow over a fiber or other medium without any accompanying clock signal. The receiving device may then be required to process this data synchronously. Embodiments describe clock and data recovery (CDR) circuits which may sample a data signal at a plurality of sampling points to partition a clock cycle into four phase regions P | 03-19-2009 |
20090208226 | Bang-bang architecture - In one embodiment, the present invention includes an apparatus having a voltage controlled oscillator (VCO) to generate a first clock signal having a frequency controlled by a bias current coupling ratio of first and second bias currents, and a control circuit coupled to the VCO to generate a first pair of control signals to adjust the bias current coupling ratio. Other embodiments are described and claimed. | 08-20-2009 |