Patent application number | Description | Published |
20080318378 | MIM Capacitors with Improved Reliability - A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer. | 12-25-2008 |
20130270663 | ANTI-REFLECTIVE LAYER FOR BACKSIDE ILLUMINATED CMOS IMAGE SENSORS - A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method includes depositing a metal oxide anti-reflection laminate on the first surface of the substrate. The metal oxide anti-reflection laminate includes one or more composite layers of thin metal oxides stacked over the photodiode. Each composite layer includes two or more metal oxide layers: one metal oxide is a high energy band gap metal oxide and another metal oxide is a high refractive index metal oxide. | 10-17-2013 |
20150060774 | IMAGE SENSORS WITH ORGANIC PHOTODIODES AND METHODS FOR FORMING THE SAME - Embodiments of forming an image sensor with organic photodiodes are provided. Trenches are formed in the organic photodiodes to increase the PN-junction interfacial area, which improves the quantum efficiency (QE) of the photodiodes. The organic P-type material is applied in liquid form to fill the trenches. A mixture of P-type materials with different work function values and thickness can be used to meet the desired work function value for the photodiodes. | 03-05-2015 |
20150060775 | ORGANIC PHOTO DIODE WITH DUAL ELECTRON BLOCKING LAYERS - Embodiments of forming an image sensor with an organic photodiode are provided. The organic photodiode uses dual electron-blocking layers formed next to the anode of the organic photodiode to reduce dark current. By using dual electron-blocking layers, the values of highest occupied molecular orbital (HOMO) for the neighboring anode layer and the organic electron-blocking layer are matched by one of the dual electron-blocking layers to form a photodiode with good performance. The values of the lowest occupied molecular orbital (LOMOs) of the dual electron-blocking layers are selected to be lower than the neighboring anode layer to reduce dark current. | 03-05-2015 |
Patent application number | Description | Published |
20130093048 | Deposited Material and Method of Formation - A system and method for manufacturing a semiconductor device is provided. An embodiment comprises forming a deposited layer using an atomic layer deposition (ALD) process. The ALD process may utilize a first precursor for a first time period, a first purge for a second time period longer than the first time period, a second precursor for a third time period longer than the first time period, and a second purge for a fourth time period longer than the third time period. | 04-18-2013 |
20140291745 | Deposited Material and Method of Formation - A system and method for manufacturing a semiconductor device is provided. An embodiment comprises forming a deposited layer using an atomic layer deposition (ALD) process. The ALD process may utilize a first precursor for a first time period, a first purge for a second time period longer than the first time period, a second precursor for a third time period longer than the first time period, and a second purge for a fourth time period longer than the third time period. | 10-02-2014 |
20150034957 | NORMALLY-OFF ENHANCEMENT-MODE MISFET - The present disclosure relates to an enhancement mode MISFET device. In some embodiments, the MISFET device has an electron supply layer located on top of a layer of semiconductor material. A multi-dielectric layer, having two or more stacked dielectric materials sharing an interface having negative fixed charges, is disposed above the electron supply layer. A metal gate structure is disposed above the multi-dielectric layer, such that the metal gate structure is separated from the electron supply layer by the multi-dielectric layer. The multi-dielectric layer provides fixed charges at interfaces between the separate dielectric materials, which cause the transistor device to achieve a normally off disposition. | 02-05-2015 |
20150041874 | MIM Capacitors with Improved Reliability - A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer. | 02-12-2015 |
20150060773 | Organic Photosensitive Device with an Electron-Blocking and Hold-Transport Layer - The present disclosure provides a photosensitive device. The photosensitive device includes a donor-intermix-acceptor (PIN) structure. The PIN structure includes an organic hole transport layer; an organic electron transport layer; and an intermix layer sandwiched between the hole transport organic material layer and the electron transport organic material layer. The intermix layer includes a mixture of an n-type organic material and a p-type organic material. | 03-05-2015 |
20150060873 | Crystalline Layer for Passivation of III-N Surface - Some embodiments of the present disclosure relates to a crystalline passivation layer for effectively passivating III-N surfaces. Surface passivation of HEMTs reduces or eliminates the surface effects that can otherwise degrade device performance. The crystalline passivation layer reduces the degrading effects of surface traps and provides a good interface between a III-nitride surface and an insulator (e.g., gate dielectric formed over the passivation layer). | 03-05-2015 |