Patent application number | Description | Published |
20090103068 | EXPOSURE APPARATUS AND METHOD FOR PHOTOLITHOGRAPHY PROCESS - Provided is an exposure apparatus including a variable focusing device. The variable focusing device may include a transparent membrane that may be deformed in the presence of an electric field. The deformation of the transparent membrane may allow the focus length of a radiation beam to be modified. In an embodiment, the variable focusing device may be modulated such that a radiation beam having a first focus length is provided for a first position on an exposure target and a radiation beam having a second focus length is provided for a second position on the exposure target. A method and computer-readable medium are also provided. | 04-23-2009 |
20110164234 | NOVEL PHOTORESIST MATERIALS AND PHOTOLITHOGRAPHY PROCESSES - A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy. | 07-07-2011 |
20110165515 | NOVEL PHOTORESIST MATERIALS AND PHOTOLITHOGRAPHY PROCESSES - A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy. | 07-07-2011 |
20110212403 | METHOD AND APPARATUS FOR ENHANCED DIPOLE LITHOGRAPHY - Provided is a lithography system that includes a source for providing energy, an imaging system configured to direct the energy onto a substrate to form an image thereon, and a diffractive optical element (DOE) incorporated with the imaging system, the DOE having a first dipole located in a first direction and a second dipole located in the first direction or a second direction perpendicular the first direction. The first dipole includes a first energy-transmitting region spaced a first distance from a center of the DOE. The second dipole includes a second energy-transmitting region spaced a second distance from the center of the DOE. The first distance is greater than the second distance. | 09-01-2011 |
20110284966 | Structure and Method for Alignment Marks - The alignment mark and method for making the same are described. In one embodiment, a semiconductor structure includes a plurality of gate stacks formed on the semiconductor substrate and configured as an alignment mark; doped features formed in the semiconductor substrate and disposed on sides of each of the plurality of gate stacks; and channel regions underlying the plurality of gate stacks and free of channel dopant. | 11-24-2011 |
20110285036 | OVERLAY MARK ASSISTANT FEATURE - A method and apparatus for alignment are disclosed. An exemplary apparatus includes a substrate having an alignment region; an alignment feature in the alignment region of the substrate; and a dummy feature disposed within the alignment feature. A dimension of the dummy feature is less than a resolution of an alignment mark detector. | 11-24-2011 |
20120082940 | PHOTOLITHOGRAPHY PROCESS FOR SEMICONDUCTOR DEVICE - Provided is a non-transitory computer readable medium including instructions to generate a level sensor map and create a compensation map from the level sensor map. The level sensor map includes a first determination of a first height above a reference plane of a feature disposed on a semiconductor substrate, and a second determination of a second height above the reference plane of a second feature disposed on a semiconductor substrate. The first and second feature are in a single exposure field. The compensation map includes a determination of at least one parameter to be used during exposure of a single field during an exposure process for the semiconductor substrate. | 04-05-2012 |
20120146159 | STRUCTURE AND METHOD FOR OVERLAY MARKS - The overlay mark and method for making the same are described. In one embodiment, a semiconductor overlay structure includes gate stack structures formed on the semiconductor substrate and configured as an overlay mark, and a doped semiconductor substrate disposed on both sides of the gate stack structure that includes at least as much dopant as the semiconductor substrate adjacent to the gate stack structure in a device region. The doped semiconductor substrate is formed by at least three ion implantation steps. | 06-14-2012 |
20130188164 | DOUBLE DIPOLE LITHOGRAPHY METHOD FOR SEMICONDUCTOR DEVICE FABRICATION - A method of photolithography including coupling a first aperture to a lithography system, then performing a first illumination process to form a first pattern on a layer of a substrate using the first aperture, thereafter coupling a second aperture to the lithography system, and performing a second illumination process to form a second pattern on the layer of the substrate using the second aperture. The first aperture includes a first pair and a second pair of radiation-transmitting regions. The second aperture includes a second plate having a third pair and a fourth pair of radiation-transmitting regions. | 07-25-2013 |
20130330904 | OVERLAY MARK ASSISTANT FEATURE - A method and apparatus for alignment are disclosed. An exemplary apparatus includes a substrate having an alignment region; an alignment feature in the alignment region of the substrate; and a dummy feature disposed within the alignment feature. A dimension of the dummy feature is less than a resolution of an alignment mark detector. | 12-12-2013 |