Hsiao, Tainan City
Chao-Kuang Hsiao, Tainan City TW
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20110043964 | CERAMIC POWDER COMPOSITION, CERAMIC MATERIAL, AND MULTI-LAYER CERAMIC CAPACITOR FABRICATED THEREBY - A ceramic powder composition, ceramic material, and a multi-layer ceramic capacitor fabricated thereby are provided. The ceramic powder composition includes a main ingredient and an accessory ingredient. The main ingredient is in an amount of 95 to 99 mol %, and includes BaTiO | 02-24-2011 |
20110176253 | CERAMIC POWDER COMPOSITION, CERAMIC MATERIAL, AND MULTILAYER CERAMIC CAPACITOR FABRICATED THEREBY - A ceramic powder composition, a ceramic material and a multi-layer ceramic capacitor fabricated thereby are presented. The ceramic powder composition includes a main component and a glassy component. A content of the glassy component is 0.2 to 2.0 mole % based on the main component. The main component includes (Ba | 07-21-2011 |
Cheng-Tai Hsiao, Tainan City TW
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20150108644 | 3D Integrated Circuit and Methods of Forming the Same - An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer. | 04-23-2015 |
20150243611 | Wafer Bonding Process and Structure - A semiconductor device and a method of fabricating the same are introduced. In an embodiment, one or more passivation layers are formed over a first substrate. Recesses are formed in the passivation layers and one or more conductive pads are formed in the recesses. One or more barrier layers are formed between the passivation layers and the conductive pads. The conductive pads of the first substrate are aligned to the conductive pads of a second substrate and are bonded using a direct bonding method. | 08-27-2015 |
Chen-Ming Hsiao, Tainan City TW
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20140142313 | NEW CRYSTALLINE FORM OF CLOPERASTINE HYDROCHLORIDE - The present invention provides a compound of new crystalline form I and form II of 1-[2-[(4-chlorophenyl)phenylmethoxy]ethyl]piperidinium monohydrochloride. The compound of form I has an X-ray diffraction pattern expressed in terms of 2-theta angles that comprises the following peaks: 15.5, 15.9, 17.6, 18.3, 18.8, 19.8, 20.2, 20.8, 21.2, 21.9, 22.9, 24.8, 25.7, 27.7, 28.0, and 30.6 degrees. In addition, the compound of form II has an X-ray diffraction pattern expressed in terms of 2-theta angles that comprises the following peaks: 14.8, 16.7, 17.3, 18.0, 18.2, 19.8, 20.5, 21.1, 22.8, 23.7, 25.0, 25.2, 25.4, 26.4, 27.8, 28.3, 29.0, 29.9, and 31.6 degrees. | 05-22-2014 |
Chin-Yuan Hsiao, Tainan City TW
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20140189101 | AUTO-CONFIGURATION SERVER AND MANAGEMENT METHOD OF CUSTOMER PREMISES EQUIPMENTS - An auto-configuration server (ACS) and a management method of customer premises equipments (CPEs) thereof are provided, and the ACS includes a sub server communication module and a group management module. When an online message is received from a new CPE, the management method includes performing an extension procedure including the following steps. A health value of the ACS is calculated. When the health value of the ACS is less than or equal to a health threshold, a new group and a sub server corresponding to the new group are added and the new CPE is managed by the sub server corresponding to the new group. | 07-03-2014 |
Chung-Min Hsiao, Tainan City TW
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20150102149 | Directly Falling Powder Type Coffee Grinding Machine - A coffee grinding machine includes a base, a motor and a grinding device. The motor is mounted in the base. The base has a top face provided with a platform for mounting the grinding device. The grinding device includes an outer cutter and an inner cutter. A bearing is mounted on the outer cutter to drive the outer cutter so that the outer cutter is rotated above the inner cutter to grind the falling coffee beans into coffee powders. Thus, the coffee powders fall down vertically and will not remain in the grinding device. | 04-16-2015 |
Emily Hsiao, Tainan City TW
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20090117316 | Thermal module - A thermal module includes a body press-forged from magnesium alloy that is heated to a softened status and having a peripheral wall and a recessed chamber surrounded by the peripheral wall, and a contact surface member prepared from a high thermal conductivity metal material and bonded to the recessed chamber of the body during press-forging of the body. | 05-07-2009 |
20090117402 | Thermal module - A thermal module directly press-forged from magnesium alloy is disclosed having a peripheral wall, a recessed chamber surrounded by the peripheral wall. The body is made of magnesium alloy by means of softening magnesium alloy with heat and then press forging softened magnesium alloy into the desired shape. | 05-07-2009 |
20100203356 | Magnesium alloy compound type thermal metal material - A magnesium alloy compound type thermal metal material includes a heat dissipation surface layer formed of a magnesium alloy, a contact surface layer formed of gold, platinum, silver, or copper alloy, and a fusion layer, which is an eutectic structure joined between the heat dissipation surface layer and the contact surface layer under and formed therebetween subject to application of a high temperature and a high pressure, such that the thermal conductivity metal alloy of the contact surface layer absorbs heat energy quickly from the heat source and transfers absorbed heat energy to the heat dissipation surface layer for quick dissipation; the internal molecules of the product are joined tightly together subject to the applied pressure, and the surface of the product allows for electroplating. | 08-12-2010 |
Fang-Hsuing Hsiao, Tainan City TW
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20140121284 | Stable Pharmaceutical Composition - Provided is a stable pharmaceutical composition having as an active ingredient a therapeutically effective amount of R(+)-N-propargyl-1-aminoindan or a pharmaceutically acceptable salt thereof, an absorption modulator, and a diluent, wherein the absorption modulator is glycerin, and the diluent is anhydrous dibasic calcium phosphate (CaHPO | 05-01-2014 |
Feibin Hsiao, Tainan City TW
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20100129220 | BLADE PITCH CONTROLLING APPARATUS AND APPLICATION THEREOF - A blade pitch controlling apparatus and an application thereof are described. The blade pitch controlling apparatus includes a centrifugal device and a blade pitch variable device, and the blade pitch variable device is arranged under the centrifugal device. The blade pitch variable device has a downward stroke that is variable by the centrifugal device according to a centrifugal force induced thereon so as to drive the blade pitch variable device to change the setting angle of the blades of the wind power generator. | 05-27-2010 |
Fei-Bin Hsiao, Tainan City TW
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20080217819 | Micro/Nano-Pattern Film Contact Transfer Process - A micro/nano-pattern film contact transfer process is described, comprising: providing a mold, wherein an imprinting pattern is set in a first surface of the mold; forming a release layer on the first surface of the mold and a transfer material layer on the release layer; providing a substrate; placing the mold on a first surface of the substrate, wherein the first surface of the mold is opposite to the first surface of the substrate; applying a pre-pressed force on the substrate from a second surface opposite to the first surface of the substrate; providing a heating source to heat the transfer material layer to produce an adhesion effect between a portion of the transfer material layer contacting with the first surface of the substrate and the substrate; and removing the mold, wherein the contacting portion of the transfer material layer is transferred onto the first surface of the substrate. | 09-11-2008 |
20080296803 | Nano-imprinting process - A nano-imprinting process is described, comprising: providing a substrate including an imprinting material layer covering a surface of the substrate; providing a mold including protruding features set on a surface of the mold covered with an anti-adhesion layer; forming a transferring material layer on a top surface of each protruding feature; embedding the transferring material layer into a first portion of the imprinting material layer; removing the mold and separating the mold and the transferring material layer simultaneously to transfer the transferring material layer into the first portion of the imprinting material layer and to expose a second portion of the imprinting material layer; using the transferring material layer as a mask to remove the second portion of the imprinting material layer and a portion of the substrate; and removing the first portion of the imprinting material layer and the transferring material layer. | 12-04-2008 |
20110231146 | SYSTEM AND METHOD FOR ESTIMATING TORQUE AND ROTATIONAL SPEED OF MOTOR - A system and a method for estimating a torque and a rotational speed of a motor are disclosed. The system includes a sound receiving device, a feature extraction device, and an artificial neural network module. In the method, at first, a plurality of training data are provided, wherein the training data includes a plurality of history sound feature values of the motor and history torque values or history rotation values corresponding thereto. Thereafter, an artificial neural network stored in the artificial neural network module is trained by the history data to obtain a motor model of the motor. Then, a motor sound signal made by the motor in a working state is received. Thereafter, sound feature values of the motor sound signal are extracted. Thereafter, the rotational speed value and the torque value are computed by the motor model in accordance with the at least one sound feature value. | 09-22-2011 |
Han-Chi Hsiao, Tainan City TW
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20100277350 | GROUP KEYPADS IN COMPLIANCE WITH STANDARD KEYBOARD INSTALLATION - A group keypad structure in compliance with a standard keyboard installation includes group keypads corresponding to characters of a standard keyboard input method; for example, the structure includes ten group keypads installed from left to right on a base, and the ten group keypads include characters of “Q, A, Z”, “W, S, X”, “E, D, C”, “R, F, V”, “T, G, B”, “Y, H, N”, “U, J, M”, “I, K, ,”, “O, L, .” and “P, ;, /” respectively, and further includes ten numeric characters “ | 11-04-2010 |
Hung-Ta Hsiao, Tainan City TW
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20130135857 | LIGHT-EMITTING DIODE ROAD LAMP STRUCTURE - A light-emitting diode road lamp structure includes a seat body and a plurality of tube bodies. The seat body includes an accommodation space to accommodate a circuit unit. The tube bodies are juxtaposedly connected to an outside of the seat body, a plurality of light-emitting (LED) units accommodated in the tube bodies are electrically connected to the circuit unit, and an interspace is formed between each of the tube bodies and the tube body abutted therewith, thereby providing the road lamp with a better heat-dissipation efficiency by the air flow passing through the interspace, maintaining the luminous efficiency of the LED units, and extending the life span of the LED units. | 05-30-2013 |
Jen-Chang Hsiao, Tainan City TW
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20130181964 | LIQUID CRYSTAL DISPLAY - A liquid crystal display (LCD) including a LCD panel having a plurality of pixels, a source driver outputting a plurality of pixel voltages to the LCD panel, a gate driver, and a timing controller is provided. During performing a polarity inversion on a polarity signal corresponding to a first frame, the timing controller sequentially outputs a first start signal and a second start signal to the gate driver in a first frame period corresponding to the first frame. The gate driver sequentially outputs a plurality of first scan signals and a plurality of second scan signals to the LCD panel according to the first start signal and the second start signal, so that the brightness corresponding to a plurality of gray levels in the first frame are equal to the brightness corresponding to the gray levels in a plurality of previous frames and a plurality of following frames. | 07-18-2013 |
Ju-Hung Hsiao, Tainan City TW
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20120136919 | METHOD AND SYSTEM FOR EDITING MULTIMEDIA FILE - A method and a system for editing a multimedia file are provided, wherein the multimedia file provided by a server is edited and played by a client device. In the present method, the multimedia file provided by the server is downloaded and played. At least one edit operation for modifying the multimedia file is received. The edit operation is converted into a plurality of edit commands recognizable to the server. The edit commands are sent to the server to request the server to modify the multimedia file accordingly. The modified multimedia file is downloaded from the server and played again. | 05-31-2012 |
20130318045 | METHOD OF PRE-BROWSING AND CUSTOMIZING BROWSING DATA AND DIGITAL MEDIA DEVICE USING THE SAME - A method of pre-browsing and customizing browsing data and a digital media device using the same are provided. The method includes following steps. In a step (a), a directory structure of a server is locally copied by recursively requesting to browse each node of the directory structure, where the directory structure has a plurality of levels, and each of the levels has at least one node. In a step (b), the step (a) is repeated on each of other servers so that the directory structures of all the servers are locally copied. | 11-28-2013 |
20130318206 | RENDER, CONTROLLER AND MANAGING METHODS THEREOF - A render, a controller, and managing methods thereof are provided. The render includes a storage unit, a playback unit, and a determination unit. The storage unit includes an instruction queue temporarily saving an instruction from the controller. According to a playback instruction from the controller, the playback unit downloads a multimedia file from a server through a network and plays the multimedia file. The determination unit receives the instruction through the network and determines whether a first controller identification information is identical to a second controller identification information corresponding to the multimedia currently played by the render. When the first controller identification information is identical to the second controller identification information, the render performs an operative action corresponding to the instruction. When the first controller identification information is different from the second controller identification information, the instruction is saved in the instruction queue of the storage unit. | 11-28-2013 |
Jun-Yin Hsiao, Tainan City TW
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20130256328 | DISPLAY AND STORAGE BOX - A display and storage box includes a box having a bottom plate with four sides, and the bottom plate has a first side plate and a second side plate respectively extending upward from two opposite sides thereof, and a third side plate and a fourth side plate respectively extending upward from the other two opposite sides of the bottom plate. A space is defined between the bottom plate, the first, second, third and fourth side plates. An opening communicating with the space is formed by folding the fourth side plate. An object can be easily put in the box or removed from the box via the opening. | 10-03-2013 |
Ju Wen Hsiao, Tainan City TW
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20130049101 | SEMICONDUCTOR DEVICES UTILIZING PARTIALLY DOPED STRESSOR FILM PORTIONS AND METHODS FOR FORMING THE SAME - A semiconductor structure and method for forming the same provide a high mobility stressor material suitable for use as source/drain regions or other active devices. The structure is formed in a substrate opening and is doped with an impurity such as boron in upper portions but is void of the impurity in regions that contact the surfaces of the opening. The structure is therefore resistant to out-diffusion of the dopant impurity during high temperature operations and may be formed through selective deposition using reduced pressure chemical vapor deposition or reduced pressure epitaxial deposition. | 02-28-2013 |
20150311314 | SEMICONDUCTOR DEVICES UTILIZING PARTIALLY DOPED STRESSOR FILM PORTIONS - A method includes providing a gate structure over a semiconductor substrate and forming a source/drain region associated with the gate structure by etching an opening in the semiconductor substrate, performing a first epitaxial growth process while an entirety of a sidewall of the opening is exposed to grow a first epitaxy material in the opening. The first epitaxial growth process is free of a first dopant impurity. A second epitaxial growth process is performed after first epitaxial growth process to grow a second epitaxy material on the first epitaxy material. The second epitaxy material has the first dopant impurity at a first concentration. Further, a third epitaxial growth process is performed after the second epitaxial growth process that includes introducing the first dopant impurity at a second concentration, the second concentration greater than the first concentration. | 10-29-2015 |
Li-Yin Hsiao, Tainan City TW
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20130230445 | Method Of Processing Wafer Waste - Provided is a method of processing wafer waste. First, the wafer waste is separated into liquid mixture and solid mixture by solid-liquid separation. Next, a recovered cutting fluid is isolated from the liquid mixture by evaporation. The solid mixture is mixed with a first aqueous solvent to obtain a mixing slurry. Then, the mixing slurry is separated into a silicon-containing mixture and a silicon carbide-containing mixture. After suitable washing process, a recovered silicon and a recovered silicon carbide are finally obtained. Thus, the method recovers the cutting fluid, silicon and silicon carbide in the same process, which can reduce the environmental contaminations caused by wafer waste and reduce the manufacture cost of wafer production by recovering the wafer waste. | 09-05-2013 |
20140137400 | METHOD OF PRODUCING SILICON MATERIAL, ANODE MATERIAL AND METHOD OF PRODUCING ANODE ELECTRODE OF LITHIUM-ION BATTERY - Provided is a method of producing a silicon material, comprising: slicing a silicon substrate with a fixed-abrasives wire to obtain a mixing slurry; and treating the mixing slurry by solid-liquid separation, so as to isolate a silicon material from the mixing slurry, which is applicable for a lithium-ion battery. With the simplified method, the production cost of silicon material is remarkably reduced. Furthermore, an anode material of a lithium-ion battery and a method of producing an anode electrode of a lithium-ion battery are provided. Since the silicon material produced by the method has high purity and fine granules, the extreme volumetric expansion of silicon under heat is largely reduced, and thus the cycle stability, electrical performance, and quality of a lithium-ion battery comprising the silicon material are improved. | 05-22-2014 |
20140141330 | METHOD OF PRODUCING SILICON-CONTAINING COMPOSITION, ANODE MATERIAL AND METHOD OF PRODUCING ANODE ELECTRODE OF LITHIUM-ION BATTERY - Provided is a method of producing a silicon-containing composition in mass production, comprising steps of: slicing a silicon substrate with a free-abrasive wire to obtain a mixing slurry; separating the mixing slurry into a liquid mixture and a solid mixture; and sorting the solid mixture by particle size and removing the cutting wire granules from the solid mixture, so as to obtain the silicon-containing composition applicable for a lithium-ion battery. Furthermore, an anode material of a lithium-ion battery and a method of producing an anode electrode of a lithium-ion battery are provided. According to the method, a few abrasives of the wire sawing tool remain in the nano-scale or micro-scale silicon-containing composition, and thus the problems of extreme volumetric expansion under heat and high production cost are overcome. The produced silicon-containing composition is applicable for a lithium-ion battery. | 05-22-2014 |
Rong-June Hsiao, Tainan City TW
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20150038056 | TEMPERATURE MODIFICATION FOR CHEMICAL MECHANICAL POLISHING - Among other things, one or more systems and techniques for increasing temperature for chemical mechanical polishing (CMP) are provided. For example, a liquid heater component is configured to supply heated liquid to a polishing pad upon which a semiconductor wafer is to be polished, resulting in a heated polishing pad having a heated polishing pad temperature. The increased temperature of the heated polishing pad increases oxidation of the semiconductor wafer, which improves a CMP removal rate of material from the semiconductor wafer due to a decreased oxidation timespan and a stabilization timespan for reaching a stable CMP removal rate during CMP. In this way, the semiconductor wafer is polished utilizing the heated polishing pad, such as by a tungsten CMP process. | 02-05-2015 |
Sheng-Jen Hsiao, Tainan City TW
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20120133681 | GAMMA CORRECTION METHOD - A gamma correction method adapted for a liquid crystal display panel is provided. The gamma correction method includes the following steps. A reference gamma curve is provided. The LCD panel is lighted up with at least one of primary-color frames. Gamma voltages of the primary-color frame are set for the LCD panel based on the reference gamma curve to obtain at least one primary-color gamma curve. The gamma correction is performed on the LCD panel based on the at least one primary-color gamma curve or a linear combination curve of the at least one primary-color gamma curve. By using the gamma correction method, the LCD panel could be allowed to provide good image quality. | 05-31-2012 |
20130176347 | PROJECTION APPARATUS AND PROJECTION METHOD - A projection apparatus including an image panel, a projection lens, and a control unit is provided. The image panel is configured to provide an image beam and has a displaying area. The projection lens is configured to project the image beam to form an image. When the optical axis of the projection lens is tilted with respect to a normal of the image, the control unit commands a first portion of the displaying area to show a compressed frame corresponding to the image and commands a second portion of the displaying area to show a black border. A projection method is also provided. | 07-11-2013 |
Shih-Wen Hsiao, Tainan City TW
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20130032425 | BICYCLE TRANSMISSION DEVICE - The bicycle transmission device includes a hollow tube extending through the bottom bracket and two caps are connected to two ends of the hollow tube. A motor unit has two extensions and multiple fixing assemblies, wherein the extensions are positioned by the caps. The fixing assemblies fix the motor unit to the underside of the bicycle. A shaft extends through the hollow tube and a first one-way transmission device is connected to one end of the shaft. A chainwheel and a first passive wheel are connected to the other end of the transmission shaft. Two cranks are connected to two ends of the transmission shaft. A motor located in the motor unit and has a second passive wheel. The first and second passive wheels transmit energy via the belt. The present invention reduces the space required for the motor and balances the weight of the bicycle. | 02-07-2013 |
Tien-Mu Hsiao, Tainan City TW
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20080261555 | Intertalk wristband radio frequency identification tag - The present invention discloses an intertalk wristband RFID (Radio Frequency Identification) tag, which applies to any type of wireless automatic wristband RFID system and comprises an RFID system, an audio-receiving system, and an audio-outputting system. The present invention utilizes the RFID system to receive and transmits the audio information-bearing signal and the radio frequency signal to implement a bidirectional communication function. Via the bidirectional communication function, the nursed in an emergency can press an intertalk button to talk with the nursing personnel and ask for rescue. | 10-23-2008 |
Ting-Han Hsiao, Tainan City TW
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20160051062 | Fixing Mount for Fixing an Elastic Strip on a Chair - A fixing mount for fixing an elastic strip includes a body and multiple assembling seats. The body has a front face, a back face located opposite to the front face, an inner surface connected with the front face and the back face, an outer surface located opposite to the inner surface, a mounting space surrounded by the front face, the back face and the inner surface, and at least one through hole formed through the inner surface and communicating with the mounting space. The assembling seats are formed on the outer surface and are located in the mounting space. The fixing mount can be mounted on a chair frame without exposing screws and dirt will not fall in and accumulate in the through holes easily. | 02-25-2016 |
Tsai-Fu Hsiao, Tainan City TW
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20080258178 | Method of forming a MOS transistor - A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of CO, CO | 10-23-2008 |
20100001317 | CMOS TRANSISTOR AND THE METHOD FOR MANUFACTURING THE SAME - A CMOS transistor and a method for manufacturing the same are disclosed. A semiconductor substrate having at least a PMOS transistor and an NMOS transistor is provided. The source/drain of the PMOS transistor comprises SiGe epitaxial layer. A carbon implantation process is performed to form a carbon-doped layer in the top portion of the source/drain of the PMOS transistor. A silicide layer is formed on the source/drain. A CESL is formed on the PMOS transistor and the NMOS transistor. The formation of the carbon-doped layer is capable of preventing Ge out-diffusion. | 01-07-2010 |
20100144110 | Method of forming a MOS transistor - A method of forming a MOS transistor, in which, a co-implantation is performed to implant a carbon co-implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect, and the carbon co-implant is from a precursor comprising CO or CO | 06-10-2010 |
20120068268 | TRANSISTOR STRUCTURE AND METHOD OF FABRICATING THE SAME - A method of fabricating a transistor structure includes the step of providing a substrate having a gate thereon. Then, a first spacer is formed at two sides of the gate. After that, an LDD region is formed in the substrate at two sides of the gate. Later, a second spacer comprising a carbon-containing spacer and a sacrificing spacer is formed on the first spacer. Subsequently, a source/drain region is formed in the substrate at two sides of the gate. Finally, the sacrificing spacer is removed entirely, and part of the carbon-containing spacer is also removed. The remaining carbon-containing spacer has an L shape. The carbon-containing spacer has a first carbon concentration, and the sacrificing spacer has a second carbon concentration. The first carbon concentration is greater than the second carbon concentration. | 03-22-2012 |
20120202328 | METHOD FOR FABRICATING MOS TRANSISTOR - The invention discloses a method for fabricating a MOS transistor. A substrate having thereon a gate structure is provided. A silicon nitride layer is deposited on the gate structure. A dry etching process is then performed to define a silicon nitride spacer on each sidewall of the gate structure and a recess in a source/drain region on each side of the gate structure. A transitional layer covering the gate structure and the recess is deposited. A pre-epitaxial clean process is performed to remove the transitional layer. The substrate is subjected to a pre-bake process. An epitaxial growth process is performed to grow an embedded SiGe layer in the recess. The disposable silicon nitride spacer is removed. | 08-09-2012 |
20140038374 | METHOD FOR MANUFACTURING CMOS TRANSISTOR - A CMOS transistor and a method for manufacturing the same are disclosed. A semiconductor substrate having at least a PMOS transistor and an NMOS transistor is provided. The source/drain of the PMOS transistor comprises SiGe epitaxial layer. A carbon implantation process is performed to form a carbon-doped layer in the top portion of the source/drain of the PMOS transistor. A silicide layer is formed on the source/drain. A CESL is formed on the PMOS transistor and the NMOS transistor. The formation of the carbon-doped layer is capable of preventing Ge out-diffusion. | 02-06-2014 |
Wen Chu Hsiao, Tainan City TW
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20130049101 | SEMICONDUCTOR DEVICES UTILIZING PARTIALLY DOPED STRESSOR FILM PORTIONS AND METHODS FOR FORMING THE SAME - A semiconductor structure and method for forming the same provide a high mobility stressor material suitable for use as source/drain regions or other active devices. The structure is formed in a substrate opening and is doped with an impurity such as boron in upper portions but is void of the impurity in regions that contact the surfaces of the opening. The structure is therefore resistant to out-diffusion of the dopant impurity during high temperature operations and may be formed through selective deposition using reduced pressure chemical vapor deposition or reduced pressure epitaxial deposition. | 02-28-2013 |
20130256663 | SURFACE TENSION MODIFICATION USING SILANE WITH HYDROPHOBIC FUNCTIONAL GROUP FOR THIN FILM DEPOSITION - A semiconductor structure that includes crystalline surfaces and amorphous hydrophilic surfaces is provided. The hydrophilic surfaces are treated with silane that includes a hydrophobic functional group, converting the hydrophilic surfaces to hydrophobic surfaces. Chemical vapor deposition or other suitable deposition methods are used to simultaneously deposit a material on both surfaces and due to the surface treatment, the deposited material exhibits superior adherence qualities on both surfaces. In one embodiment, the structure is an opening formed in a semiconductor substrate and bounded by at least one portion of a crystalline silicon surface and at least one portion of an amorphous silicon oxide structure. | 10-03-2013 |
20130295739 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In a method of manufacturing a semiconductor device, a source/drain feature is formed over a substrate. A Si-containing layer is formed over the source/drain feature. A metal layer is formed over the Si-containing layer. A metal silicide layer is formed from the metal layer and Si in the Si-containing layer. | 11-07-2013 |
20140191299 | Dual Damascene Metal Gate - A method for fabricating a dual damascene metal gate includes forming a dummy gate onto a substrate, disposing a protective layer on the substrate and the dummy gate, and growing an expanding layer on sides of the dummy gate. The method further includes removing the protective layer, forming a spacer around the dummy gate, and depositing and planarizing a dielectric layer. The method further includes selectively removing the expanding layer, and removing the dummy gate. | 07-10-2014 |
20140239416 | Semiconductor device - A semiconductor device includes a source/drain feature in a substrate. The source/drain feature has an upper portion and a lower portion, the upper portion having a lower concentration of Ge than the lower portion. A Si-containing layer over the source/drain feature includes a metal silicide layer. | 08-28-2014 |
20150255578 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a gate structure located on a substrate and a raised source/drain region adjacent to the gate structure. The raised source/drain region includes: a first epitaxial-grown doped layer of the raised source/drain region in contact with the substrate; a second epitaxial-grown doped layer on the first epitaxial-grown doped layer and including a same dopant species as the first epitaxial-grown doped layer, wherein the second epitaxial-grown doped layer includes a higher dopant concentration than the first epitaxial-grown doped layer and interfacing the gate structure by using a predetermined distance; and a third epitaxial-grown doped layer on the second epitaxial-grown doped layer and including the same dopant species as the first epitaxial-grown doped layer, wherein the third epitaxial-grown doped layer includes a higher dopant concentration than the second epitaxial-grown doped layer. | 09-10-2015 |
20150311314 | SEMICONDUCTOR DEVICES UTILIZING PARTIALLY DOPED STRESSOR FILM PORTIONS - A method includes providing a gate structure over a semiconductor substrate and forming a source/drain region associated with the gate structure by etching an opening in the semiconductor substrate, performing a first epitaxial growth process while an entirety of a sidewall of the opening is exposed to grow a first epitaxy material in the opening. The first epitaxial growth process is free of a first dopant impurity. A second epitaxial growth process is performed after first epitaxial growth process to grow a second epitaxy material on the first epitaxy material. The second epitaxy material has the first dopant impurity at a first concentration. Further, a third epitaxial growth process is performed after the second epitaxial growth process that includes introducing the first dopant impurity at a second concentration, the second concentration greater than the first concentration. | 10-29-2015 |
Yun-Chien Hsiao, Tainan City TW
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20120068509 | CHAIR ASSEMBLY WITH A BACKREST-ADJUSTING DEVICE - A chair assembly has a base frame, a pivot frame, a backrest frame, a seat frame and a backrest-adjusting device. The pivot frame is mounted pivotally on the base frame. The backrest frame is mounted securely on the pivot frame. The backrest-adjusting device is mounted between the base frame and the pivot frame and has a torsion spring biasing the pivot frame and the backrest frame to pivot forward. The backrest-adjusting device tightens or loosens the torsion spring to change the resilient force provided to the backrest frame against users' back. Therefore, the chair assembly adapts to differ users well. | 03-22-2012 |
20120074749 | Chair Assembly with a Seat-Adjusting Device - A chair assembly has a supporting frame, a backrest frame, a seat frame and a seat-adjusting device. The backrest frame is mounted on the supporting frame. The seat frame is connected pivotally to the base frame. The seat-adjusting device is mounted between the base frame and the seat frame and may be manipulated to move the seat bar backward or forward relative to the base frame. Therefore, a distance between the seat frame and the backrest frame may be adjusted to adapt for different users. | 03-29-2012 |
Yun-Lien Hsiao, Tainan City TW
Patent application number | Description | Published |
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20140098433 | WAFER LEVEL LENS, LENS SHEET AND MANUFACTURING METHOD THEREOF - A method of manufacturing a lens sheet including following steps is provided. A first structure is provided. The first structure includes a first transparent substrate and a first lens film attached to the first transparent substrate. A second structure is provided. The second structure includes a second transparent substrate and a second lens film. The second transparent substrate has a first surface and a second surface opposite to the first surface. The second lens film is attached to the first surface. The first lens film is attached to the second lens film. A third lens film is formed on the second surface of the second substrate after the first lens film is attached to the second lens film. Moreover, a lens sheet and a wafer level lens are also provided. | 04-10-2014 |
20140204467 | WAFER LEVEL OPTICAL LENS STRUCTURE - A wafer level optical lens structure is provided. A stress buffer layer is disposed between a light-transmissive substrate and a lens layer, so as to improve production yield of the wafer level optical lens. | 07-24-2014 |
20150331155 | WAFER LEVEL LENS, LENS SHEET - A lens sheet including a first transparent substrate, a first lens film, a second lens film, a second transparent substrate, a plurality of bonding material patterns and a plurality of buffer cavities is provided. The first lens film is disposed on the first transparent substrate, and having a plurality of first lens portions and a plurality of first carrying portions. The second lens film is disposed between the second transparent substrate and the first lens film. The bonding material patterns are disposed between the second lens film and the first carrying portions. The buffer cavities are located between the first carrying portions and the first lens portions. | 11-19-2015 |
Yu-Wei Hsiao, Tainan City TW
Patent application number | Description | Published |
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20140364374 | AMINO ACID SEQUENCE FOR INHIBITING PTX3 TO TREAT NASOPHARYNGEAL CARCINOMA - The invention relates to an amino acid sequence for inhibiting PTX3 to treat nasopharyngeal carcinoma. It can be used to inhibit PTX3 from promoting the migration and invasion of nasopharyngeal carcinoma cells, promoting angiogenesis and inhibiting macrophage phagocytosis to further treat nasopharyngeal carcinoma. | 12-11-2014 |
20150025018 | METHOD FOR INHIBITING euPTX3 TO TREAT NASOPHARYNGEAL CARCINOMA BY AMINO ACID SEQUENCE - The invention relates to a method for inhibiting euPTX3 to treat nasopharyngeal carcinoma by an amino acid sequence, comprising administering an effective amount of the amino acid sequence to a subject in need. The amino acid sequence can be used to inhibit euPTX3 from promoting the migration and invasion of nasopharyngeal carcinoma cells, promoting angiogenesis and inhibiting macrophage phagocytosis to further treat nasopharyngeal carcinoma. | 01-22-2015 |