| Patent application number | Description | Published |
|---|
| 20110303987 | BIPOLAR FIELD EFFECT TRANSISTOR STRUCTURES AND METHODS OF FORMING THE SAME - Bipolar field effect transistor (BiFET) structures and methods of forming the same are provided. In one embodiment, an apparatus includes a substrate and a plurality of epitaxial layers disposed over the substrate. The plurality of epitaxial layers includes a first epitaxial layer, a second epitaxial layer disposed over the first epitaxial layer, and a third epitaxial layer disposed over the second epitaxial layer. The first epitaxial layer includes at least a portion of a channel of a first field effect transistor (FET) and the third epitaxial layer includes at least a portion of a channel of a second FET. | 12-15-2011 |
| 20120139006 | DEVICES AND METHODOLOGIES RELATED TO STRUCTURES HAVING HBT AND FET - A semiconductor structure includes a heterojunction bipolar transistor (HBT) including a collector layer located over a substrate, the collector layer including a semiconductor material, and a field effect transistor (FET) located over the substrate, the FET having a channel formed in the semiconductor material that forms the collector layer of the HBT. In some implementations, a second FET can be provided so as to be located over the substrate and configured to include a channel formed in a semiconductor material that forms an emitter of the HBT. One or more of the foregoing features can be implemented in devices such as a die, a packaged module, and a wireless device. | 06-07-2012 |
| 20140002188 | POWER AMPLIFIER MODULES INCLUDING RELATED SYSTEMS, DEVICES, AND METHODS | 01-02-2014 |
| 20140097472 | BIPOLAR FIELD EFFECT TRANSISTOR STRUCTURES AND METHODS OF FORMING THE SAME - Bipolar field effect transistor (BiFET) structures and methods of forming the same are provided. In one embodiment, an apparatus includes a substrate and a plurality of epitaxial layers disposed over the substrate. The plurality of epitaxial layers includes a first epitaxial layer, a second epitaxial layer disposed over the first epitaxial layer, and a third epitaxial layer disposed over the second epitaxial layer. The first epitaxial layer includes at least a portion of a channel of a first field effect transistor (FET) and the third epitaxial layer includes at least a portion of a channel of a second FET. | 04-10-2014 |
| 20150152543 | SYSTEMS, DEVICES AND METHODS RELATED TO REACTIVE EVAPORATION OF REFRACTORY MATERIALS - Systems, devices and methods related to reactive evaporation of refractory materials. In some embodiments, a method for performing reactive evaporation can include positioning a volume of refractory material such as tantalum within an evaporation chamber and forming a vacuum environment therein. The method can further include providing a beam of electrons to the volume of refractory material to evaporate the refractory material into evaporated particles. The method can further include introducing a flow of reactive gas such as nitrogen into the evaporation chamber to allow at least some of the reactive gas to react with at least some of the evaporated particles of the refractory material. The flow of reactive gas can be selected such that a layer such as tantalum nitride formed on a substrate by deposition of the evaporated particles includes a range of a desirable property. | 06-04-2015 |
| 20150326181 | POWER AMPLIFIER MODULES INCLUDING RELATED SYSTEMS, DEVICES, AND METHODS - A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×10 | 11-12-2015 |
| 20150326182 | POWER AMPLIFIER MODULES INCLUDING RELATED SYSTEMS, DEVICES, AND METHODS - A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×10 | 11-12-2015 |
| 20150326183 | POWER AMPLIFIER MODULES INCLUDING RELATED SYSTEMS, DEVICES, AND METHODS - One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. Other embodiments of the module are provided along with related methods and components thereof. | 11-12-2015 |
