Patent application number | Description | Published |
20130081421 | REFRIGERATOR - A refrigerator includes: a refrigerator main body having a cooling chamber; a cooling chamber door for opening and closing the cooling chamber; a shelf assembly provided within the cooling chamber such that a height thereof is adjustable; and a basket provided in any one of the refrigerator main body and the cooling chamber door such that a height thereof is adjustable. A space of the refrigerator main body or the cooling chamber door can be utilized to facilitate receiving and keeping food items. | 04-04-2013 |
20140035453 | Home Appliance Having Movable Door Handle - A home appliance having a door which may be opened and closed, and more particularly, a home appliance to assist a user in easily opening or closing a door is disclosed. The home appliance includes a cabinet having a chamber in which an object is received or retrieved, a door to open or close the chamber, and a handle assembly to be rotated relative to the door during opening or closing of the door, wherein rotation of the handle assembly causes the door to be rotated about a door rotating axis. | 02-06-2014 |
20150114026 | REFRIGERATOR - A refrigerator includes: a refrigerator main body having a cooling chamber; a cooling chamber door for opening and closing the cooling chamber; a shelf assembly provided within the cooling chamber such that a height thereof is adjustable; and a basket provided in any one of the refrigerator main body and the cooling chamber door such that a height thereof is adjustable. A space of the refrigerator main body or the cooling chamber door can be utilized to facilitate receiving and keeping food items. | 04-30-2015 |
20150114029 | REFRIGERATOR - A refrigerator includes: a refrigerator main body having a cooling chamber; a cooling chamber door for opening and closing the cooling chamber; a shelf assembly provided within the cooling chamber such that a height thereof is adjustable; and a basket provided in any one of the refrigerator main body and the cooling chamber door such that a height thereof is adjustable. A space of the refrigerator main body or the cooling chamber door can be utilized to facilitate receiving and keeping food items. | 04-30-2015 |
20150123532 | REFRIGERATOR - A refrigerator includes: a refrigerator main body having a cooling chamber; a cooling chamber door for opening and closing the cooling chamber; a shelf assembly provided within the cooling chamber such that a height thereof is adjustable; and a basket provided in any one of the refrigerator main body and the cooling chamber door such that a height thereof is adjustable. A space of the refrigerator main body or the cooling chamber door can be utilized to facilitate receiving and keeping food items. | 05-07-2015 |
Patent application number | Description | Published |
20130082233 | SELECTIVE PLACEMENT OF CARBON NANOTUBES VIA COULOMBIC ATTRACTION OF OPPOSITELY CHARGED CARBON NANOTUBES AND SELF-ASSEMBLED MONOLAYERS - A method of forming a structure having selectively placed carbon nanotubes, a method of making charged carbon nanotubes, a bi-functional precursor, and a structure having a high density carbon nanotube layer with minimal bundling. Carbon nanotubes are selectively placed on a substrate having two regions. The first region has an isoelectric point exceeding the second region's isoelectric point. The substrate is immersed in a solution of a bi-functional precursor having anchoring and charged ends. The anchoring end bonds to the first region to form a self-assembled monolayer having a charged end. The substrate with charged monolayer is immersed in a solution of carbon nanotubes having an opposite charge to form a carbon nanotube layer on the self-assembled monolayer. The charged carbon nanotubes are made by functionalization or coating with an ionic surfactant. | 04-04-2013 |
20140217356 | THIN FILM WAFER TRANSFER AND STRUCTURE FOR ELECTRONIC DEVICES - An electronic device includes a spreading layer and a first contact layer formed over and contacting the spreading layer. The first contact layer is formed from a thermally conductive crystalline material having a thermal conductivity greater than or equal to that of an active layer material. An active layer includes one or more III-nitride layers. A second contact layer is formed over the active layer, wherein the active layer is disposed vertically between the first and second contact layers to form a vertical thin film stack. | 08-07-2014 |
20140220764 | THIN FILM WAFER TRANSFER AND STRUCTURE FOR ELECTRONIC DEVICES - A method for wafer transfer includes forming a spreading layer, including graphene, on a single crystalline SiC substrate. A semiconductor layer including one or more layers is formed on and is lattice matched to the crystalline SiC layer. The semiconductor layer is transferred to a handle substrate, and the spreading layer is split to remove the single crystalline SiC substrate. | 08-07-2014 |
20140284547 | SELF-FORMATION OF HIGH-DENSITY ARRAYS OF NANOSTRUCTURES - A method for forming nanostructures includes bonding a flexible substrate to a crystalline semiconductor layer having a two-dimensional material formed on a side opposite the flexible substrate. The crystalline semiconductor layer is stressed in a first direction to initiate first cracks in the crystalline semiconductor layer. The first cracks are propagated through the crystalline semiconductor layer and through the two-dimensional material. The stress of the crystalline semiconductor layer is released to provide parallel structures including the two-dimensional material on the crystalline semiconductor layer. | 09-25-2014 |
20140284616 | SELF-FORMATION OF HIGH-DENSITY ARRAYS OF NANOSTRUCTURES - A method for forming nanostructures includes bonding a flexible substrate to a crystalline semiconductor layer having a two-dimensional material formed on a side opposite the flexible substrate. The crystalline semiconductor layer is stressed in a first direction to initiate first cracks in the crystalline semiconductor layer. The first cracks are propagated through the crystalline semiconductor layer and through the two-dimensional material. The stress of the crystalline semiconductor layer is released to provide parallel structures including the two-dimensional material on the crystalline semiconductor layer. | 09-25-2014 |
20140291282 | WAFER SCALE EPITAXIAL GRAPHENE TRANSFER - A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a substrate, the spreading layer having a monolayer. A stressor layer is formed on the spreading layer, and the stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein the closest monolayer remains on the stressor layer. | 10-02-2014 |
20140339506 | FORMATION OF LARGE SCALE SINGLE CRYSTALLINE GRAPHENE - A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a first substrate. The spreading layer has at least one monolayer. A stressor layer is formed on the spreading layer. The stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein at least the closest monolayer remains on the stressor layer. The at least one monolayer is stamped against a second substrate to adhere remnants of the two-dimensional material on the at least one monolayer to the second substrate to provide a single monolayer on the stressor layer. The single monolayer is transferred to a third substrate. | 11-20-2014 |
20140342127 | FORMATION OF LARGE SCALE SINGLE CRYSTALLINE GRAPHENE - A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a first substrate. The spreading layer has at least one monolayer. A stressor layer is formed on the spreading layer. The stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein at least the closest monolayer remains on the stressor layer. The at least one monolayer is stamped against a second substrate to adhere remnants of the two-dimensional material on the at least one monolayer to the second substrate to provide a single monolayer on the stressor layer. The single monolayer is transferred to a third substrate. | 11-20-2014 |
20150228728 | FORMATION OF LARGE SCALE SINGLE CRYSTALLINE GRAPHENE - A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a first substrate. The spreading layer has at least one monolayer. A stressor layer is formed on the spreading layer. The stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein at least the closest monolayer remains on the stressor layer. The at least one monolayer is stamped against a second substrate to adhere remnants of the two-dimensional material on the at least one monolayer to the second substrate to provide a single monolayer on the stressor layer. The single monolayer is transferred to a third substrate. | 08-13-2015 |
20150235849 | SELF-FORMATION OF HIGH-DENSITY ARRAYS OF NANOSTRUCTURES - A method for forming nanostructures includes bonding a flexible substrate to a crystalline semiconductor layer having a two-dimensional material formed on a side opposite the flexible substrate. The crystalline semiconductor layer is stressed in a first direction to initiate first cracks in the crystalline semiconductor layer. The first cracks are propagated through the crystalline semiconductor layer and through the two-dimensional material. The stress of the crystalline semiconductor layer is released to provide parallel structures including the two-dimensional material on the crystalline semiconductor layer. | 08-20-2015 |
20150263087 | SELF-FORMATION OF HIGH-DENSITY ARRAYS OF NANOSTRUCTURES - A method for forming nanostructures includes bonding a flexible substrate to a crystalline semiconductor layer having a two-dimensional material formed on a side opposite the flexible substrate. The crystalline semiconductor layer is stressed in a first direction to initiate first cracks in the crystalline semiconductor layer. The first cracks are propagated through the crystalline semiconductor layer and through the two-dimensional material. The stress of the crystalline semiconductor layer is released to provide parallel structures including the two-dimensional material on the crystalline semiconductor layer. | 09-17-2015 |
20150336800 | WAFER SCALE EPITAXIAL GRAPHENE TRANSFER - A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a substrate, the spreading layer having a monolayer. A stressor layer is formed on the spreading layer, and the stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein the closest monolayer remains on the stressor layer. | 11-26-2015 |