| Patent application number | Description | Published |
|---|
| 20160044754 | MULTICHANNEL CONSTANT CURRENT LED DRIVING CIRCUIT, DRIVING METHOD AND LED DRIVING POWER - A multichannel constant current LED driving circuit can include: (i) a power stage circuit having a power switching transistor, an inductor, and a rectifier circuit, where the power stage circuit is configured to receive a DC bus voltage, and to generate a pseudo-constant output signal to drive a plurality of LED strings; (ii) a current control unit configured to control an average current of each of the plurality of LED strings in accordance with a corresponding one of a plurality of dimming signals; and (iii) the current control unit being configured to control the power switching transistor in accordance with a current feedback signal that represents a current flowing through the LED strings, where the plurality of LED strings are coupled in series to receive the pseudo-constant output signal. | 02-11-2016 |
| 20160044759 | MULTICHANNEL CONSTANT CURRENT LED CONTROLLING CIRCUIT AND CONTROLLING METHOD - A multichannel constant current LED controlling circuit can include: (i) a control loop configured to generate a first control signal in accordance with a current feedback signal that represents a driving current flowing through an LED load, where the LED load comprises a plurality of LED strings coupled in series; (ii) a loop steady state network comprising a plurality of steady state holding components configured to hold a plurality of steady state control signals that correspond to a plurality of load states of the LED load, where when a state of the LED load varies, at least one of the steady state holding components is selected by the control loop to generate the first control signal; and (iii) a power switching transistor of a power stage circuit configured to generate a pseudo-constant output current to drive the LED load. | 02-11-2016 |
| 20160056708 | RIPPLE FILTER CIRCUIT AND RIPPLE FILTER METHOD - A method of filtering a ripple can include: (i) generating, by a sampling circuit, a sense voltage signal that represents an output current flowing through a load; (ii) generating, by a filter circuit, a filter voltage signal by filtering the sense voltage signal, where the filter circuit includes a switch capacitor circuit and a filter capacitor; and (iii) generating, by an error amplifying circuit, an error compensation signal by amplifying a difference between the sense voltage signal and the filter voltage signal, where the error compensation signal is configured to compensate and regulate the output current flowing through the load by controlling a power switch that is coupled to the load and the sampling circuit. | 02-25-2016 |
| 20160066377 | LED DRIVING CIRCUIT AND METHOD USING SINGLE INDUCTOR - The present disclosure relates to an LED driving circuit and method using a single inductor. A constant current controller controls a power stage circuit to provide a constant output signal, and thus to provide a constant current signal for an LED load. A dimming controller regulates luminance of the LED load. A constant voltage generating circuit receives the current signal at an output terminal of the power stage circuit and a reserve supply voltage for providing a supply voltage for the dimming controller. Compared with the prior art, the present disclosure does not need an independent power supply chip, and reduces components such as inductors and rectifying transistors. Thus, a peripheral circuit is simplified, and an overall size of the system is reduced. | 03-03-2016 |
| Patent application number | Description | Published |
|---|
| 20150191806 | ULTRAHIGH-STRENGTH, HIGH-TOUGHNESS, WEAR-RESISTANT STEEL PLATE AND MANUFACTURING METHOD THEREOF - The invention provides a wear-resistant steel plate, which has the following chemical composition (wt. %): C: 0.22-0.35%, Si: 0.10-0.40%, Mn: 0.60-1.35%, P: ≦0.015%, S: ≦0.010%, Nb: 0.010-0.040%, Al: 0.010-0.080%, B: 0.0006-0.0014%, Ti: 0.005-0.050%, Ca: 0.0010-0.0080%, V≦0.080%, Cr≦0.60%, W≦1.00 wt. %, N≦0.0080%, O≦0.0060%, H≦0.0004%, wherein 0.025%≦Nb+Ti≦0.080%, 0.030%≦Al+Ti≦0.12%, and the balance of Fe and unavoidable impurities. The method of manufacturing the wear-resistant steel plate comprises the steps of smelting, casting, rolling, post-rolling direct cooling and the like. The wear-resistant steel plate obtained from the above composition and process has high strength, high hardness, good low-temperature toughness, and excellent machinability, and is suitable for quick-wear devices in engineering and mining machinery, such as bucket and scraper transporter, etc. | 07-09-2015 |
| 20150211098 | HIGH-STRENGTH, HIGH-TOUGHNESS, WEAR-RESISTANT STEEL PLATE AND MANUFACTURING METHOD THEREOF - The invention provides a wear-resistant steel plate, which has the following chemical composition (wt. %): C: 0.08-0.21%, Si: 0.15-0.45%, Mn: 1.10-1.80%, P: ≦0.015%, S: ≦0.010%, Nb: 0.010-0.040%, Al: 0.010-0.080%, B: 0.0006-0.0014%, Ti: 0.005-0.050%, Ca: 0.0010-0.0080%, V≦0.080%, Cr≦0.60%, N≦0.0080%, O≦0.0060%, H≦0.0004%, wherein 0.025%≦Nb+Ti≦0.080%, 0.030%≦Al+Ti≦0.12%, and the balance being Fe and unavoidable impurities. The invention also provides a method of manufacturing the wear-resistant steel plate, comprising smelting, casting, rolling, post-rolling direct cooling, inter alia. The wear-resistant steel plate obtained from the above composition and process has perfect weldability, high strength, high hardness, good low-temperature toughness, and excellent machinability, and is suitable for quick-wear devices in engineering and mining machinery, such as bucket, mining vehicle body and scraper transporter, etc. | 07-30-2015 |
| 20150329945 | HIGH-HARDNESS, HIGH-TOUGHNESS, WEAR-RESISTANT STEEL PLATE AND MANUFACTURING METHOD THEREOF - The invention provides a wear-resistant steel plate, which has the following chemical composition (wt. %): C: 0.36-0.45%, Si: 0.10-0.30%, Mn: 0.40-1.00%, P≦0.015%, S≦0.010%, Nb: 0.010-0.040%, Al: 0.010-0.080%, B: 0.0010-0.0020%, Ti: 0.005-0.050%, Ca: 0.0010-0.0080%, V≦0.080%, Cr≦1.00%, RE≦0.10%, N≦0.0080%, O≦0.0060%, H≦0.0004%, wherein the total amount of Nb and Ti is between 0.025% and 0.080%, the total amount of Al and Ti is between 0.030% and 0.12%, and the balance being Fe and unavoidable impurities. The invention also provides a method of manufacturing the wear-resistant steel plate, comprising smelting, casting, rolling, post-rolling direct cooling and other steps. The wear-resistant steel plate obtained from the above composition and process has high hardness and excellent wear resistance, and is suitable for quick-wear devices in engineering machinery, such as crusher baffle, etc. | 11-19-2015 |
| 20160002759 | HIGH-TOUGHNESS LOW-ALLOY WEAR-RESISTANT STEEL SHEET AND METHOD OF MANUFACTURING THE SAME - A high-toughness low-alloy wear-resistant steel sheet and a method of manufacturing the same, which has the chemical compositions (wt %): C: 0.08-0.20%; Si: 0.10-0.60%; Mn: 1.00-2.00%; B: 0.0005-0.0040%; Cr: less than or equal to 1.50%; Mo: less than or equal to 0.80%; Ni: less than or equal to 1.50%; Nb: less than or equal to 0.080%; V: less than or equal to 0.080%; Ti: less than or equal to 0.060%; Al: 0.010-0.080%, Ca: 0.0010-0.0080%, N: less than or equal to 0.0080%, 0: less than or equal to 0.0080%, H: less than or equal to 0.0004%, P: less than or equal to 0.015%, S: less than or equal to 0.010%, and (Cr/5+Mn/6+50B): more than or equal to 0.20% and less than or equal to 0.55%; (Mo/3+Ni/5+2Nb): more than or equal to 0.02% and less than or equal to 0.45%; (Al+Ti): more than or equal to 0.01% and less than or equal to 0.13%, the remainders being Fe and unavoidable impurities. The present invention reduces the contents of carbon and alloy elements, and makes full use of the characteristics of refinement, strengthening, etc. of micro-alloy elements such as Nb, Ti, etc., and through TMCP process, the wear-resistant steel sheet has high strength, high hardness, good toughness, good weldability, excellent wear-resistant performance, and is applicable to wearing parts in various mechanical equipments. | 01-07-2016 |
| 20160032432 | HIGH-PERFORMANCE LOW-ALLOY WEAR-RESISTANT STEEL AND METHOD OF MANUFACTURING THE SAME - A high-performance low-alloy wear-resistant steel sheet and a method of manufacturing the same, which has the chemical compositions (wt %): C: 0.21-0.32%; Si: 0.10-0.50%; Mn: 0.60-1.60%; B: 0.0005-0.0040%; Cr: less than or equal to 1.50%; Mo: less than or equal to 0.80%; Ni: less than or equal to 1.50%; Nb: less than or equal to 0.080%; V: less than or equal to 0.080%; Ti: less than or equal to 0.060%; Al: 0.010-0.080%, Ca: 0.0010-0.0080%, N: less than or equal to 0.0080%, O: less than or equal to 0.0080%, H: less than or equal to 0.0004%, P: less than or equal to 0.015%, S: less than or equal to 0.010%, and (Cr/5+Mn/6+50B): more than or equal to 0.20% and less than or equal to 0.55%; (Mo/3+Ni/5+2Nb): more than or equal to 0.02% and less than or equal to 0.45%; (Al+Ti): more than or equal to 0.01% and less than or equal to 0.13%, the remainders being Fe and unavoidable impurities. The wear-resistant steel sheet of the present invention obtained by the above-mentioned compositions and TMCP process, has high strength, high hardness, good toughness, excellent wear-resistant performance, and is applicable to wearing parts in various mechanical equipments. | 02-04-2016 |
| Patent application number | Description | Published |
|---|
| 20150085935 | SUB-PREDICTION UNIT (PU) BASED TEMPORAL MOTION VECTOR PREDICTION IN HEVC AND SUB-PU DESIGN IN 3D-HEVC - Techniques are described for sub-prediction unit (PU) based motion prediction for video coding in HEVC and 3D-HEVC. In one example, the techniques include an advanced temporal motion vector prediction (TMVP) mode to predict sub-PUs of a PU in single layer coding for which motion vector refinement may be allowed. The advanced TMVP mode includes determining motion vectors for the PU in at least two stages to derive motion information for the PU that includes different motion vectors and reference indices for each of the sub-PUs of the PU. In another example, the techniques include storing separate motion information derived for each sub-PU of a current PU predicted using a sub-PU backward view synthesis prediction (BVSP) mode even after motion compensation is performed. The additional motion information stored for the current PU may be used to predict subsequent PUs for which the current PU is a neighboring block. | 03-26-2015 |
| 20150124885 | METHOD AND APPARATUS FOR CODING AND DECODING VIDEOS - This disclosure relates to the field of video coding and decoding technology, and particularly, to a method and an apparatus for coding and decoding videos, wherein the coding method comprises: acquiring available neighbouring pixel points which are reconstructed and neighbouring to a coding unit; finding a reference block corresponding to the coding unit according to the motion vector of a prediction unit for a pixel attribute in the coding unit, and acquiring corresponding reference pixel points around the reference block; calculating a pixel attribute compensation parameter of the prediction unit using a value of the pixel attribute of the neighbouring pixel point and a value of the same pixel attribute of the reference pixel point; and calculating a first prediction value of the prediction unit according to the pixel attribute compensation parameter, and coding the coding unit according to the first prediction value. | 05-07-2015 |
| 20150215642 | METHOD AND APPARATUS FOR PREDICTING RESIDUAL - Embodiments of the present invention provide a method and an apparatus for predicting a residual, which method is applied to three-dimensional video encoding or multi-visual angle video encoding and comprises searching, when performing inter frame image prediction encoding on a prediction unit, a corresponding unit of the prediction unit in an adjacent visual angle encoded at the same time; and predicting a time domain predicted residual of the prediction unit by utilizing a time domain predicted residual of the corresponding unit in the encoded adjacent visual angle. The method is applied to three-dimensional video decoding or multi-visual angle video decoding and comprises judging, when performing inter frame image prediction decoding on a prediction unit, whether the prediction unit adopts a residual prediction; searching, if it is determined the prediction unit adopts the residual prediction, a corresponding unit of the prediction unit in an adjacent visual angle decoded at the same time; and predicting a predicted residual of the prediction unit by utilizing a time domain predicted residual of the corresponding unit in the decoded adjacent visual angle. The present invention improves video compression ratio and enhances encoding/decoding efficiencies. | 07-30-2015 |
| 20150304683 | INTRAFRAME CODING METHOD, DEVICE AND ENCODER FOR DEPTH IMAGES - The embodiments of the present invention provide an intraframe encoding method, device and encoder for depth images. The method is applied to 3D video encoding or multi-view video encoding. The method includes: in an intraframe encoding mode for depth images, generating a non-all-zero residual and an all-zero residual when a prediction unit is encoded; and performing a rate-distortion optimization selection between the non-all-zero residual and the all-zero residual, as a residual encoding scheme of the prediction unit. The device is applied to 3D video encoding or multi-view video encoding. The device includes: a residual generation unit configured to generate, in an intraframe encoding mode for depth images, a non-all-zero residual and an all-zero residual when a prediction unit is encoded; and a rate-distortion optimization selection unit configured to perform a rate-distortion optimization selection between the non-all-zero residual and the all-zero residual, as a residual encoding scheme of the prediction unit. | 10-22-2015 |
| 20160073082 | DEPTH PICTURE INTER ENCODING AND DECODING METHOD, ENCODER AND DECODER - A depth picture inter encoding method, a decoding method, an encoder and a decoder, wherein the depth picture inter encoding method comprises: judging whether a depth picture inter encoding mode is a skip mode; setting a first depth picture inter encoding flag bit to an encoding unit if it is judged that the depth picture inter encoding mode is not the skip mode; judging whether the first depth picture inter encoding flag bit is true, encoding merely one residual value to each prediction unit if it is judged that the first depth picture inter encoding flag bit is true. Encoding by adopting a residual encoding manner existing in 3D-HEVC if it is judged that the first depth picture inter encoding flag bit is false. | 03-10-2016 |
| Patent application number | Description | Published |
|---|
| 20100212331 | CRYOPRESERVATION METHOD AND DEVICE - A device and method suitable for the cryopreservation of all types of biological cells is described. In this method, an ultra-fast cooling/warming device system is used to achieve vitrification of individual cells or cell suspensions without cryoprotectant agents (CPA) or with a low concentration of CPAs (<1M), to attenuate the formation of intracellular ice crystal formation during cooling, and to minimize devitrification during subsequent warming. The device system applies oscillating heat pipe (OHP) and nanofluid techniques, and is built through microfabrication. Several devices may be networked to increase the total volume of cell samples that the cryopreservation system can process simultaneously. | 08-26-2010 |
| 20110079022 | HYBRID THERMOELECTRIC-EJECTOR COOLING SYSTEM - A hybrid thermoelectric-ejector active cooling system having an increased Coefficient of Performance (COP) when compared to typical thermoelectric cooling modules. A thermoelectric cooling module is integrated with an ejector cooling device so that heat from the thermoelectric cooling module is rejected to a high temperature evaporator of the ejector cooling device. This provides for a total COP greater than the sum of the COPs of the thermoelectric cooling module and ejector cooling device individually. For example, given 1 unit input power into the thermoelectric cooling module, the heat received by the cold side of the thermoelectric cooling module would be COP | 04-07-2011 |
| 20110206077 | Thin Disk Laser Operations with Unique Thermal Management - A thermal management apparatus and method for a thin disk laser system enabling the laser system to have near isothermal temperatures across and throughout a thin disk comprising a mechanically controlled oscillating heat pipe having effective thermal conductivity of 10-20,000 W/m*K that promotes near isothermal conditions in lasing of the thin disk, a thin disk lasing crystal or ceramic bonded to the mechanically controlled oscillating heat pipe, and a supporting structure including a surface bonded to the thin disk that matches the CTE (coefficient of thermal expansion) of both materials. | 08-25-2011 |
| 20110259039 | Thermally Driven Heat Pump for Heating and Cooling - A thermally driven heat pump includes a low temperature evaporator for evaporating cooling fluid to remove heat A first heat exchanger located at an outlet of a converging/diverging chamber of a first ejector receives a flow of primary fluid vapor and cooling fluid vapor ejected from the first ejector for condensing a portion of the cooling fluid vapor An absorber located in the first heat exchanger absorbs cooling fluid vapor into an absorbing fluid to reduce the pressure in the first heat exchanger A second heat exchanger located at an outlet of a converging/diverging chamber of a second ejector receives primary fluid vapor and cooling fluid vapor ejected from the second ejector for condensing the cooling fluid vapor and the primary fluid vapor A separator in communication with the second ejector, the low temperature evaporator and the primary fluid evaporator separates the primary fluid from the cooling fluid. | 10-27-2011 |
| 20130044776 | Integrated Advanced Heat Spreader for Solid-State Laser Systems - A thermal management apparatus and method for a solid-state laser system enabling the laser system to have near isothermal temperatures across and throughout a solid-state gain material, by mechanically controlling an oscillating heat pipe having effective thermal conductivity of 10-20,000 W/m*K; bonding a solid-state lasing crystal or ceramic to the mechanically controlled oscillating heat pipe; and providing a supporting structure including a surface bonded to the solid-state lasing crystal or ceramic that matches the coefficient of thermal expansion of both the solid-state lasing crystal or ceramic and the mechanically controlled oscillating heat pipe. | 02-21-2013 |
| 20130133871 | Multiple Thermal Circuit Heat Spreader - A heat spreader has more than one thermal circuit to give better performance over a wider range of heat input regimes. Different working fluids may be used in the different thermal circuits. The thermal circuits may extend in three dimensions to improve the density of the channels in limited space. | 05-30-2013 |
| 20140190666 | Active Cooling of High Speed Seeker Missile Domes and Radomes - A thermal management system and method for active cooling of high speed seeker missile domes or radomes comprising bonding to an IR dome or RF radome a heat pipe system having effective thermal conductivity of 10-20,000 W/m*K and comprising one or more mechanically controlled oscillating heat pipes, employing supporting integrating structure including a surface bonded to the IR dome or RF radome that matches the coefficient of thermal expansion the dome or radome material and that of said one or more mechanically controlled oscillating heat pipes, and operating the heat pipe system to cool the IR dome or RF radome while the missile is in flight. | 07-10-2014 |
| 20150072424 | CRYOGENIC COOLING THIN FILM EVAPORATOR - One aspect of the present invention is directed to an apparatus for cryogenically cooling a substance. The apparatus of the present invention includes a thin film evaporator comprising a microstructured surface and an applicator for dispensing a working fluid onto the microstructured surface. The apparatus preferably contains a pressure-controlled vessel enclosing the thin film evaporator and at least a portion of the applicator. In a second aspect, the present invention is directed to the method of using a thin film evaporator of the present invention to cryogenically cool a substance by forming a thin film layer of the working fluid on the microstructured surface of the thin film evaporator. | 03-12-2015 |
| 20150107601 | WIRELESS PATIENT POSITIONING AND WARMING DEVICE - The present invention provides a new and improved positioning device for stabilizing a subject on an operation table without a clinician's manual fitting. The inventive positioning device comprises a mattress/pad with a shell filled with a substance and a vacuum outlet on the sidewall of the shell. The invention also provides a warming device for preventing hypothermia of a subject on an operation table. The inventive warming device comprises a single cavity or an array of closed cuboid cavities contained in a shell and filled with a phase change material (PCM) in a form of liquid, and a triggering means for activating nucleation of the phase change material, which leads to an exothermic crystallization of the material to start the heat emission. The invention further provides a combination device that performs positioning and warming functions simultaneously. | 04-23-2015 |
| Patent application number | Description | Published |
|---|
| 20130166270 | METHOD OF SUBSTATION-CONTROL CENTER TWO-LEVEL DISTRIBUTED MODELING FOR POWER GRID - A method of substation-control center two-level distributed modeling for power grid is provided. The method comprises: (1) building a substation model for each of substations, each substation model comprising a network model having a topological structure of the substation devices, parameters of the substation devices and measurement information of each substation devices, and a wiring diagram of each substation based on a whole line identification consistency; (2) uploading each substation model for each of the substations to the control center through a state power dispatching data network; and (3) splicing network models for the substations according to the wiring diagrams of the substations to build a whole power grid model of a whole power grid so as to monitor and control the whole power grid. | 06-27-2013 |
| 20140046493 | STATIC SECURITY CONSTRAINED AUTOMATIC VOLTAGE CONTROL METHOD - A static security constrained automatic voltage control method is provided, which includes: performing a single automatic voltage control calculation for a control snapshot of a power system in each control cycle. The single automatic voltage control calculation comprises: obtaining a single-time severe contingency sequencing table and a periodical severe contingency sequencing table from a historical severe contingency information database, and selecting severe contingencies; performing a contingency assessment for the active contingency set, and iterating between a result of the contingency assessment for the active contingency set and a solution of the optimal power flow model to obtain a single automatic voltage control instruction; and performing a contingency assessment for a contingency set, and updating the single-time severe contingency sequencing table and the periodical severe contingency sequencing table according to a comprehensive result of the contingency assessment. | 02-13-2014 |
| 20140046501 | AUTOMATIC VOLTAGE CONTROL METHOD BASED ON COOPERATIVE GAME THEORY - A security and economy coordinated automatic voltage control method based on a cooperative game theory is provided. The method includes: establishing a multi-objective reactive voltage optimizing model of a power system; resolving the multi-objective reactive voltage optimizing model into an economy model and a security model; solving the economy model and the security model based on the cooperative game theory to obtain the automatic voltage control instruction; and performing an automatic voltage control for the power system according to the automatic voltage control instruction. | 02-13-2014 |
| 20140125280 | METHOD AND SYSTEM FOR CHARGING ELECTRIC VEHICLES IN AGGREGATION - Method and system for charging electric vehicles in an aggregation is provided. The method includes: obtaining a plurality of first charge power curves of a plurality of electric vehicles in the aggregation; obtaining a coordinating information of each of the plurality of electric vehicles from the plurality of first charge power curves; obtaining a first feedback charge power curve of each of the plurality of electric vehicles from the coordinating information and a charging cost curve of each of the plurality of electric vehicles; judging whether the first feedback charge power curve is same with the first charge power curve of each of the plurality of electric vehicles; if yes, charging each of the plurality of electric vehicles in accordance with the first charge power curve. | 05-08-2014 |
| 20140172298 | METHOD AND DEVICE FOR NAVIGATING ELECTRIC VEHICLE IN CHARGING - A method and a device for navigating an electric vehicle in charging are provided. The method comprises: S | 06-19-2014 |
| 20140222227 | METHOD FOR CALCULATING CONTINUATION POWER FLOW OF ELECTRIC POWER SYSTEM - A method for obtaining a continuous power flow of an electric power system is provided. The method comprises: establishing first power flow equations for PQ buses, and establishing second power flow equations for PV buses; establishing power flow equations according to the first flow equations, the second power flow equations, and a voltage magnitude and a voltage phase of a balance bus; choosing a bus having a fastest voltage drop as a parameterization bus, and defining a parameterization variable according to a voltage magnitude of the parameterization bus and the load growth factor; defining an equality constraint equation according to the parameterization variable, and generating an extended power flow equation according to the equality constraint equation and the power flow equations; solving the extended power flow equation by a plurality of iterations to obtain a plurality of load summations; generating a P-V curve according to the plurality of load summations. | 08-07-2014 |
| 20150088470 | METHOD AND DEVICE FOR IDENTIFYING FEASIBILITY OF TRANSMISSION INTERFACE CONSTRAINT IN ONLINE ROLLING DISPATCHING - A method and a device for identifying a feasibility of a transmission interface constraint in an online rolling dispatching are provided. The method comprises: S | 03-26-2015 |
| 20150145477 | METHOD AND DEVICE FOR CHARGING ELECTRIC VEHICLE IN POWER SYSTEM - A method and a device for charging an electric vehicle in a power system are provided. The method includes: obtaining a first electric vehicle connected to the power system, and obtaining a rated charging power and a first charging requirement; determining a first charging period corresponding to the first electric vehicle; determining a forecast period, and obtaining a second electric vehicle to be connected to the power system; revising the first charging period to obtain a second charging period, and obtaining a second charging requirement and a maximum charging power; establishing a charging model, establishing a first constraint of the charging model, and establishing a second constraint of the charging model; and solving the charging model under the first constraint and the second constraint to obtain an optimal charging power so as to charge each first electric vehicle under the optimal charging power. | 05-28-2015 |
| 20150145478 | METHOD AND DEVICE FOR CHARGING ELECTRIC VEHICLE IN POWER SYSTEM - A method and a device for charging an electric vehicle in a power system are provided. The method includes: obtaining a plurality of electric vehicles connected to the power system at a dispatching time, and obtaining a rated charging power and a charging requirement at the dispatching time; determining a charging period corresponding to the plurality of electric vehicles; determining a forecast period, and obtaining a charging requirement, a remaining charging energy capacity and a maximum charging power; establishing a charging model of the plurality of electric vehicles, establishing a first constraint of the charging model, and establishing a second constraint of the charging model; and solving the charging model under the first constraint and the second constraint to obtain an optimal charging power of each electric vehicle at each charging time in the charging period so as to charge each electric vehicle under the optimal charging power. | 05-28-2015 |
| 20150199301 | METHOD AND DEVICE FOR OBTAINING THREE-PHASE POWER FLOW OF POWER DISTRIBUTION NETWORK WITH UNGROUNDED TRANSFORMERS - A method for obtaining a three-phase power flow of a power distribution network and a device for obtaining a three-phase power flow of a power distribution network are provided. The method comprises steps of: selecting a three-phase power transformer with an ungrounded neutral connection in the power distribution network; correcting a three-phase admittance matrix of the three-phase power transformer; and applying the three-phase admittance matrix to a preset algorithm to obtain a three-phase power flow of the power distribution network. | 07-16-2015 |
| 20150207324 | VOLTAGE CONTROL METHOD AND APPARATUS OF CENTRAL BUS IN POWER SYSTEM - A voltage control method and apparatus of a central bus in a power system are provided. The method comprises: S1: obtaining a predetermined voltage and a current voltage; S2: obtaining a first voltage adjustment of the generator and a second voltage adjustment of the dynamic reactive power compensation device; S3: sending the first voltage adjustment and the second voltage adjustment; S4: judging whether a current reactive power of the dynamic reactive power compensation device is between a first predetermined reactive power and a second predetermined reactive power; S5: if yes, obtaining a third voltage adjustment of the generator and a fourth voltage adjustment of the dynamic reactive power compensation device; S6: sending the third voltage adjustment and the fourth voltage adjustment; repeating steps S1-S7 after a predetermined period of time; S7: if no, repeating steps S1-S7 after the predetermined period of time. | 07-23-2015 |
| 20160063153 | SIMULATION METHOD AND APPARATUS FOR WIND FARM COMMON COUPLING REGION - The present disclosure relates to a simulation method and simulation apparatus for a wind farm common coupling region. The simulation method includes: obtaining main network data calculated in a previous simulation period as initial values for performing a main network simulation in a current simulation period; obtaining sub-network data of a sub-network corresponding to each wind farm which is calculated in the previous simulation period as initial values for performing a sub-network simulation in the current simulation period, in which the sub-network data of the sub-network corresponding to each wind farm comprises terminal voltage amplitudes of wind turbines and static reactive power compensation devices in each wind farm; performing the main network simulation and the sub-network simulation in parallel in the current simulation period. | 03-03-2016 |
| 20160064931 | METHOD AND DEVICE FOR DETERMINING SAFE THRESHOLD FOR POWER GRID VOLTAGE OF WIND FARM CONVERGING AREA - Disclosed are a method and a device for determining safe threshold for power grid voltage of a wind farm converging area, The method includes: obtaining ground state voltage; obtaining upper and lower limit voltage of the output bus, first lower and upper limit of reactive powers of fans and compensation devices, and lower and upper limit of active power fluctuations; obtaining second lower and upper limit of reactive powers of fans and compensation devices; determining whether voltage error is greater than a predetermined threshold; replacing the first lower and upper limit of the reactive powers of fans and the reactive powers of compensation devices with the second lower and upper limit of reactive powers of fans and compensation devices respectively, and repeating above steps if the voltage error is greater than the predetermined threshold, else defining the upper and lower limit voltage of the output bus as a safe threshold. | 03-03-2016 |
| 20160084225 | METHOD AND APPARATUS FOR CONTROLLING VOLTAGE IN WIND FARM - The present disclosure relates to a method and an apparatus for controlling a voltage in a wind farm. The method includes: collecting measured values of parameters as initial values of the prediction values; inputting the initial values into a preset control model for optimizing a model predictive control; solving the preset control model to obtain a first solution sequence of the reactive power setting values of the wind turbines and a second solution sequence of the terminal voltage setting values of the static var generators; and sending first values in the first solution sequence to the wind turbines and first values in the second solution sequence to the static var generators, such that a voltage control in the wind farm is realized. | 03-24-2016 |
| 20160087437 | METHOD AND APPARATUS FOR CONTROLLING VOLTAGE IN NEAR DIRECT CURRENT AREA - The present disclosure relates to a method and an apparatus for controlling a voltage in a near direct current area. The method includes: collecting measured values of parameters as initial values of prediction values of the parameters; inputting the initial values into a preset control model for optimizing a model predictive control; solving the preset control model to obtain a solution sequence of the terminal voltage setting values of the generators participating in the voltage control within a time window; and sending first values in the solution sequence to the generators, such that the voltage control in the near direct current area is realized. | 03-24-2016 |
| 20160087566 | METHOD AND APPARATUS FOR CONTROLLING REACTIVE POWER OF GENERATOR IN POWER PLANT - A method and apparatus for controlling a reactive power of a generator in a power plant are provided. The method includes: S1, dividing a plurality of power plants into a plurality of plant-plant coordination groups; S2, dividing generators into a first generator and a second generator set; S3, calculating a deviation between a measured voltage and a preset voltage of a central bus; S4, comparing the deviation with a control dead band threshold; S5, establishing a reactive power tracking model if the deviation is greater than the control dead band threshold; S6, establishing a reactive power keeping model; and S7, obtaining sum reactive power adjustments of the generators according to the first reactive power adjustments and the second reactive power adjustments, and obtaining voltage adjustments of buses according to the sum reactive power adjustments. | 03-24-2016 |
| 20160098052 | PARTITION METHOD AND DEVICE FOR POWER SYSTEM - The present disclosure relates to a partition method and a partition device for a power system and belongs to a field of an evaluation and control of a power system. The method includes steps of: obtaining a quasi-steady sensitivity matrix according to generators participating in automatic voltage control and load buses in the power system; obtaining a power system model according to the quasi-steady sensitivity matrix and the load buses; determining principal component vectors and principal component singular values according to the power system model; determining a principal component vector dominated by each generator according to the principal component vectors and the principal component singular values; and partitioning the generators dominating a same principal component vector to a partition, and partitioning the load buses according to a partition result for the generators. | 04-07-2016 |
| Patent application number | Description | Published |
|---|
| 20120246327 | METHOD AND DEVICE FOR NETWORK ACCESS - Embodiments of the present invention relate to the field of communication technologies, and disclose a method and device for network access. The method includes: detecting whether a notification message reported by an x digital subscriber line module is received within a set time, wherein the notification message is used for indicating that the x digital subscriber line module is connected to a network successfully; if yes, establishing a connection between a service terminal and the x digital subscriber line module so that the service terminal accesses the network through the x digital subscriber line module; and if no, establishing a connection between the service terminal and a 3G data card module so that the service terminal accesses the network through the 3G data card module. | 09-27-2012 |
| 20140053266 | Method and server for discriminating malicious attribute of program - The present disclosure provides a method and a server for discriminating a malicious attribute of a program. The method includes: acquiring action data of a program at a client ( | 02-20-2014 |
| 20160036374 | SOLAR CELL SUPPORT ASSEMBLY - A solar cell support assembly includes: a first supporting ( | 02-04-2016 |
| 20160065120 | SOLAR CELL SUPPORT ASSEMBLY - A solar cell support assembly includes a plurality of support bases; swing bars; beams extended in a longitudinal direction and spaced from one another in a transverse direction, the beams connected to the plurality of the swing bars correspondingly, each of the beams rotatably supported on one of the plurality of support bases and adapted to mount solar panels, each of the beams comprising a hollow tube, and a wall thickness of each beam decreases gradually along a direction from a connecting position between the beam and the swing bar to two ends of the beam; a pushrod connected to the swing bars to drive the plurality of the swing bars to rotate the beams, respectively; and a driving device connected to the pushrod to drive the pushrod to move along the transverse direction. | 03-03-2016 |
| 20160072428 | SOLAR CELL SUPPORT ASSEMBLY - A solar cell support assembly includes: a plurality of support bases; a rotation shaft rotatably supported on the support bases; a frame connected to the rotation shaft to rotate with the rotation shaft and swung with respect to the rotation shaft in a pitch direction to change a pitch angle formed between the rotation shaft and the frame, the frame defining a first portion located above the rotation shaft and a second portion located below the rotation shaft; and a adjusting device disposed between the frame and the rotation shaft to adjust the pitch angle. | 03-10-2016 |
| Patent application number | Description | Published |
|---|
| 20130158198 | EPOXY RESIN COMPOSITION AND ITS PREPARING METHOD - The invention relates to an epoxy resin composition and preparation thereof. The composition comprises the following blended components: 100 weight parts of epoxy resins; 30 to 120 weight parts of anhydride curing agents; 1 to 45 weight parts of powdery nitrile rubbers; no curing accelerator is included in the composition. The composition of the invention has both higher heat resistance and higher toughness, and is suitable for the fields which require high heat resistance, such as circuit board, electronics packaging, binder and electrical insulating coating etc. | 06-20-2013 |
| 20140054512 | CONDUCTIVE FULL VULCANIZED THERMOPLASTIC ELASTOMER AND ITS PREPARATION METHOD - The invention provides a conductive full vulcanized thermoplastic elastomer and its preparation method, and relates to the technical field of full vulcanized thermoplastic elastomer. The full vulcanized thermoplastic elastomer is obtained by melt-blending components including rubber particles having crosslinking structure with mean particle diameter of 0.02 to 1 μm, carbon nanotubes as conductive fillers and thermoplastic plastics once, wherein the weight ratio of the rubber particles and the thermoplastic plastics is from 30:70 to 75:25 and the content of conductive fillers is from 0.3 to 10 weight parts based on the total weight of rubber particles and thermoplastic plastics of 100 weight parts. The resulting conductive full vulcanized thermoplastic elastomers have low content of conductive fillers and excellent combination performances. It can be prepared by conventional rubber processing methods and can be used to produce electronic production equipment, means, electronic instrument, instrument housing and decorative materials of clean production workshop having static resistance, electro magnetic interference resistance and clean requirement. | 02-27-2014 |
| 20140296439 | MODIFIED RUBBER MASTERBATCH, AND RUBBER COMPOSITION AND VULCANIZED RUBBER PRODUCED THEREFROM, AND THE PREPARATION PROCESSES FOR THEM - The present application relates to a modified rubber masterbatch and preparation method thereof, rubber composition prepared therewith and vulcanized rubber and preparation method thereof. The modified rubber component comprises uncrosslinked rubber and rubber particles having crosslinked structure dispersed therein, wherein the rubber particles having crosslinked structure are synthetic rubber particles and/or natural rubber particles, have an average particle size of 20-500 nm and a gel content of 60% by weight or higher, and wherein the uncrosslinked rubber is styrene-butadiene rubber. The weight ratio of the rubber particles having crosslinked structure to the uncrosslinked rubber is greater than 20:80 and less than or equal to 80:20. The rubber composition comprises a blend of modified rubber component and base rubber, in which the modified rubber masterbatch is present in an amount of 1 to 70 parts by weight, relative to per 100 parts by weight of the base rubber. The vulcanized rubber of the rubber composition has not only low rolling resistance and excellent wet skid resistance, but also excellent wear resistance, and thus can be used for producing high performance tread rubber. | 10-02-2014 |
| 20150105490 | RUBBER COMPOSTION, PREPARATION METHOD AND VULCANIZED RUBBER THEREOF - The present application relates to a rubber composition, preparation method and vulcanized rubber thereof. The rubber composition comprises uncrosslinked rubber and rubber particles having crosslinked structure dispersed therein, wherein the rubber particles having crosslinked structure are synthetic rubber particles and/or natural rubber particles, e.g. one or more selected from the group consisting of natural rubber particles, styrene-butadiene rubber particles, carboxylated styrene-butadiene rubber particles, nitrile butadiene rubber particles, carboxylated nitrile butadiene rubber particles, chloroprene rubber particles, polybutadiene rubber particles, silicone rubber particles or acrylic rubber particles, styrene-butadiene-vinylpyridine rubber particles and the like, with an average particle size of 20 to 500 nm and a gel content of 60% by weight or higher, and the uncrosslinked rubber is styrene-butadiene rubber, and wherein the weight ratio of the rubber particles having crosslinked structure to the uncrosslinked rubber is 1:99-20:80. The rubber composition is obtained by mixing the components comprising uncrosslinked rubber latex and latex of rubber particles having crosslinked structure and then coagulating them. The latex of rubber particles having crosslinked structure is a rubber latex after radiation crosslinking. The vulcanized rubber of the rubber composition can be improved simultaneously in rolling resistance, wet skid resistance and wear resistance and thus can be used as high performance vehicle tread rubber. | 04-16-2015 |
| 20160122908 | POLYER/FILLER/METAL COMPOSITE FIBER AND PREPARATION METHOD THEREOF - The present invention relates to a polymer/filler/metal composite fiber, including a polymer fiber comprising a metal short fiber and a filler; the metal short fiber is distributed as a dispersed phase within the polymer fiber and distributed in parallel to the axis of the polymer fiber; the filler is dispersed within the polymer fiber and distributed between the metal short fibers; the filler does not melt at the processing temperature of the polymer; said metal is a low melting point metal and selected from at least one of single component metals and metal alloys, and has a melting point which ranges from 20 to 480° C., and, at the same time, which is lower than the processing temperature of the polymer; the metal short fiber and the polymer fiber have a volume ratio of from 0.01:100 to 20:100; the filler and the polymer have a weight ratio of from 0.1:100 to 30:100. The composite fiber of the present invention has reduced volume resistivity and decreased probability of broken fibers, and has a smooth surface. The present invention is simple to produce, has a lower cost, and would be easy to industrially produce in mass. | 05-05-2016 |
| Patent application number | Description | Published |
|---|
| 20080318032 | METHOD FOR SELECTIVELY FORMING SYMMETRICAL OR ASYMMETRICAL FEATURES USING A SYMMETRICAL PHOTOMASK DURING FABRICATION OF A SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEMS INCLUDING THE SEMICONDUCTOR DEVICE - A method for patterning a material during fabrication of a semiconductor device provides for the selective formation of either asymmetrical features or symmetrical features using a symmetrical photomask, depending on which process flow is chosen. The resulting features which are fabricated use spacers formed around a patterned material. If one particular etch is used to remove a base material, symmetrical features result. If two particular etches are used to remove the base material, asymmetrical features remain. | 12-25-2008 |
| 20090090958 | Semiconductor Constructions - Some embodiments include methods of forming a NAND cell unit having a NAND string gate closest to a select gate with a different width than other NAND string gates more distant from the select gate. Some embodiments include utilization of an etch comprising HBr and O | 04-09-2009 |
| 20090239382 | METHOD FOR SELECTIVELY MODIFYING SPACING BETWEEN PITCH MULTIPLIED STRUCTURES - Methods for circuit material processing are provided. In at least one such method, a substrate is provided with a plurality of overlying spacers. The spacers have substantially straight inner sidewalls and curved outer sidewalls. An augmentation material is formed on the plurality of spacers such that the inner or the outer sidewalls of the spacers are selectively expanded. The augmentation material can bridge the upper portions of pairs of neighboring inner sidewalls to limit deposition between the inner sidewalls. The augmentation material is selectively etched to form a pattern of augmented spacers having a desired augmentation of the inner or outer sidewalls. The pattern of augmented spacers can then be transferred to the substrate through a series of selective etches such that features formed in the substrate achieve a desired pitch. | 09-24-2009 |
| 20100055913 | Methods Of Forming A Photoresist-Comprising Pattern On A Substrate - A method of forming a photoresist-comprising pattern on a substrate includes forming a patterned first photoresist having spaced first masking shields in at least one cross section over a substrate. The first masking shields are exposed to a fluorine-containing plasma effective to form a hydrogen and fluorine-containing organic polymer coating about outermost surfaces of the first masking shields. A second photoresist is deposited over and in direct physical touching contact with the hydrogen and fluorine-containing organic polymer coating. The second photoresist which is in direct physical touching contact with the hydrogen and fluorine-containing organic polymer coating is exposed to a pattern of actinic energy and thereafter spaced second masking shields are formed in the one cross section which comprise the second photoresist and correspond to the actinic energy pattern. The first and second masking shields together form at least a part of a photoresist-comprising pattern on the substrate. Other embodiments are disclosed. | 03-04-2010 |
| 20100323523 | Methods Of Plasma Etching Platinum-Comprising Materials, Methods Of Processing Semiconductor Substrates In The Fabrication Of Integrated Circuitry, And Methods Of Forming A Plurality Of Memory Cells - A platinum-comprising material is plasma etched by being exposed to a plasma etching chemistry that includes CHCl | 12-23-2010 |
| 20110183269 | Methods Of Forming Patterns, And Methods For Trimming Photoresist Features - Some embodiments include methods of forming patterns. Photoresist features may be formed over a base, with the individual photoresist features having heights and widths. The photoresist features may be exposed to a combination of chloroform, oxidant and additional carbon-containing material besides chloroform to reduce the widths of the photoresist features while substantially maintaining the heights of the photoresist features. The photoresist features may then be used as a mask to pattern the underlying base, and/or spacers may be formed to be aligned to sidewalls of the photoresist features, and the spacers may be used as the mask to pattern the underlying base. | 07-28-2011 |
| 20110248385 | METHOD FOR SELECTIVELY FORMING SYMMETRICAL OR ASYMMETRICAL FEATURES USING A SYMMETRICAL PHOTOMASK DURING FABRICATION OF A SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEMS INCLUDING THE SEMICONDUCTOR DEVICE - A method for patterning a material during fabrication of a semiconductor device provides for the selective formation of either asymmetrical features or symmetrical features using a symmetrical photomask, depending on which process flow is chosen. The resulting features which are fabricated use spacers formed around a patterned material. If one particular etch is used to remove a base material, symmetrical features result. If two particular etches are used to remove the base material, asymmetrical features remain. | 10-13-2011 |
| 20110312171 | Methods Of Forming Integrated Circuitry Comprising Charge Storage Transistors - Methods include forming a charge storage transistor gate stack over semiconductive material. One such stack includes a tunnel dielectric, charge storage material over the tunnel dielectric, a high-k dielectric over the charge storage material, and conductive control gate material over the high-k dielectric. The stack is etched at least to the tunnel dielectric to form a plurality of charge storage transistor gate lines over the semiconductive material. Individual of the gate lines have laterally projecting feet which include the high-k dielectric. After etching the stack to form the gate lines, ions are implanted into an implant region which includes the high-k dielectric of the laterally projecting feet. The ions are chemically inert to the high-k dielectric. The ion implanted high-k dielectric of the projecting feet is etched selectively relative to portions of the high-k dielectric outside of the implant region. | 12-22-2011 |
| 20120009793 | METHOD FOR SELECTIVELY MODIFYING SPACING BETWEEN PITCH MULTIPLIED STRUCTURES - Methods for circuit material processing are provided. In at least one such method, a substrate is provided with a plurality of overlying spacers. The spacers have substantially straight inner sidewalls and curved outer sidewalls. An augmentation material is formed on the plurality of spacers such that the inner or the outer sidewalls of the spacers are selectively expanded. The augmentation material can bridge the upper portions of pairs of neighboring inner sidewalls to limit deposition between the inner sidewalls. The augmentation material is selectively etched to form a pattern of augmented spacers having a desired augmentation of the inner or outer sidewalls. The pattern of augmented spacers can then be transferred to the substrate through a series of selective etches such that features formed in the substrate achieve a desired pitch. | 01-12-2012 |
| 20130323929 | METHOD FOR SELECTIVELY MODIFYING SPACING BETWEEN PITCH MULTIPLIED STRUCTURES - Methods for circuit material processing are provided. In at least one such method, a substrate is provided with a plurality of overlying spacers. The spacers have substantially straight inner sidewalls and curved outer sidewalls. An augmentation material is formed on the plurality of spacers such that the inner or the outer sidewalls of the spacers are selectively expanded. The augmentation material can bridge the upper portions of pairs of neighboring inner sidewalls to limit deposition between the inner sidewalls. The augmentation material is selectively etched to form a pattern of augmented spacers having a desired augmentation of the inner or outer sidewalls. The pattern of augmented spacers can then be transferred to the substrate through a series of selective etches such that features formed in the substrate achieve a desired pitch. | 12-05-2013 |
| 20140167131 | THREE DIMENSIONAL MEMORY - A method to fabricate a three dimensional memory structure may include creating a stack of layers including a conductive source layer, a first insulating layer, a select gate source layer, and a second insulating layer, and an array stack. A hole through the stack of layers may then be created using the conductive source layer as a stop-etch layer. The source material may have an etch rate no faster than 33% as fast as an etch rate of the insulating material for the etch process used to create the hole. A pillar of semiconductor material may then fill the hole, so that the pillar of semiconductor material is in electrical contact with the conductive source layer. | 06-19-2014 |
| 20140239303 | SEMICONDUCTOR DEVICES INCLUDING WISX AND METHODS OF FABRICATION - Some embodiments include a semiconductor device having a stack structure including a plurality of alternating tiers of dielectric material and poly-silicon formed on a substrate. Such a semiconductor device may further include at least one opening having a high aspect ratio and extending into the stack structure to a level adjacent the substrate, a first poly-silicon channel formed in a lower portion of the opening adjacent the substrate, a second poly-silicon channel formed in an upper portion of the opening, and WSiX material disposed between the first poly-silicon channel and the second poly-silicon channel in the opening. The WSiX material is adjacent to the substrate, and can be used as an etch-landing layer and a conductive contact to contact both the first poly-silicon channel and the second poly-silicon channel in the opening. Other embodiments include methods of making semiconductor devices. | 08-28-2014 |
| 20150123189 | METHODS AND APPARATUSES HAVING MEMORY CELLS INCLUDING A MONOLITHIC SEMICONDUCTOR CHANNEL - Methods for forming a string of memory cells, apparatuses having a string of memory cells, and systems are disclosed. One such method for forming a string of memory cells forms a source material over a substrate. A capping material may be formed over the source material. A select gate material may be formed over the capping material. A plurality of charge storage structures may be formed over the select gate material in a plurality of alternating levels of control gate and insulator materials. A first opening may be formed through the plurality of alternating levels of control gate and insulator materials, the select gate material, and the capping material. A channel material may be formed along the sidewall of the first opening. The channel material has a thickness that is less than a width of the first opening, such that a second opening is formed by the semiconductor channel material. | 05-07-2015 |
| 20150162246 | SEMICONDUCTOR DEVICES INCLUDING WISX - Some embodiments include a semiconductor device having a stack structure including a plurality of alternating tiers of dielectric material and poly-silicon formed on a substrate. Such a semiconductor device may further include at least one opening having a high aspect ratio and extending into the stack structure to a level adjacent the substrate, a first poly-silicon channel formed in a lower portion of the opening adjacent the substrate, a second poly-silicon channel formed in an upper portion of the opening, and WSiX material disposed between the first poly-silicon channel and the second poly-silicon channel in the opening. The WSiX material is adjacent to the substrate, and can be used as an etch-landing layer and a conductive contact to contact both the first poly-silicon channel and the second poly-silicon channel in the opening. Other embodiments include methods of making semiconductor devices. | 06-11-2015 |
| 20150333143 | Memory Arrays - Some embodiments include a memory array which has a stack of alternating first and second levels. Channel material pillars extend through the stack, and vertically-stacked memory cell strings are along the channel material pillars. A common source is under the stack and electrically coupled to the channel material pillars. The common source has conductive protective material over and directly against metal silicide, with the conductive protective material being a composition other than metal silicide. Some embodiments include methods of fabricating integrated structures. | 11-19-2015 |
| 20160099252 | MEMORY HAVING A CONTINUOUS CHANNEL - The present disclosure includes memory having a continuous channel, and methods of processing the same. A number of embodiments include forming a vertical stack having memory cells connected in series between a source select gate and a drain select gate, wherein forming the vertical stack includes forming a continuous channel for the source select gate, the memory cells, and the drain select gate, and removing a portion of the continuous channel for the drain select gate such that the continuous channel is thinner for the drain select gate than for the memory cells and the source select gate. | 04-07-2016 |
| 20160133640 | ALUMINUM OXIDE LANDING LAYER FOR CONDUCTIVE CHANNELS FOR A THREE DIMENSIONAL CIRCUIT DEVICE - A multitier stack of memory cells having an aluminum oxide (AlOx) layer as a noble HiK layer to provide etch stop selectivity. Each tier of the stack includes a memory cell device. The circuit includes a source gate select polycrystalline (SGS poly) layer adjacent the multitier stack of memory cells, wherein the SGS poly layer is to provide a gate select signal for the memory cells of the multitier stack. The circuit also includes a conductive source layer to provide a source conductor for a channel for the tiers of the stack. The AlOx layer is disposed between the source layer and the SGS poly layer and provides both dry etch selectivity and wet etch selectivity for creating a channel to electrically couple the memory cells to the source layer. | 05-12-2016 |
