Patent application number | Description | Published |
20090002613 | Retardation Compensators of Negative C-Type For Liquid Crystal Display - Disclosed is a negative C-type retardation compensator for a liquid crystal display. The negative C-type retardation compensator for the liquid crystal display includes polyarylate having a thio group or a sulfur oxide group in a polymer main chain thereof. Accordingly, the retardation compensator has an absolute value of negative retardation that is larger in a thickness direction than a retardation compensator which includes polyarylate having no thio group or sulfur oxide group in a polymer main chain thereof even though the retardation compensator having the thio group or sulfur oxide group and the retardation compensator having no thio group or sulfur oxide group are the same as each other in thickness. Thereby, the negative C-type retardation compensator for liquid crystal displays is capable of being desirably applied to the liquid crystal displays. | 01-01-2009 |
20100136308 | MULTIPLE-LAYER, MULTIPLE FILM HAVING THE SAME AND ELECTRONIC DEVICE HAVING THE SAME - The present invention provides a multiple layer that comprises two or more first inorganic material layers; and one or more second inorganic material layers that are positioned between the two first inorganic material layers and have the thickness of more than 0 nm and less than 5 nm, in which the first inorganic material layer is formed of one or more materials that are selected from silicon oxides, silicon carbide, silicon nitride, aluminum nitride and ITO, and the second inorganic material layer is formed of one or more materials that are selected from magnesium, calcium, aluminum, gallium, indium, zinc, tin, barium, and oxides and fluorides thereof, a multiple film that comprises the multiple layer, and an electronic device that comprises the multiple film. | 06-03-2010 |
20100240790 | CURING COMPOSITION AND CURED PRODUCT PREPARED BY USING THE SAME - The present invention provides a curing composition comprising maleimide and polyarylate having double bonds and a cured product prepared by using the same. The curing composition according to the present invention is used to provide a cured product having excellent heat-resistance and toughness. | 09-23-2010 |
20100286302 | CURING COMPOSITION AND CURED PRODUCT PREPARED BY USING THE SAME - The present invention relates to a curing composition comprising a polyarylate having epoxy group and a cyanate ester resin, and a cured product prepared by using the same. The curing composition according to the present invention is used to provide a cured product which is excellent in terms of heat resistance and toughness. | 11-11-2010 |
20110052890 | COMPOSITE MATERIALS, COMPOSITE FILM MANUFACTURED BY USING THE SAME AND METHOD FOR MANUFACTURING COMPOSITE FILM - The present invention provides a composite material comprising a glass cloth; and an organic- inorganic hybrid composition comprising diphenylsilanediol and alkoxy si lane, a composite film manufactured by using the same, and a method for manufacturing the composite film. | 03-03-2011 |
20110287221 | MULTILAYER FILM AND A PRODUCTION METHOD FOR SAME - Disclosed is a multi-layer film including a polymer substrate and buffer layers formed on the top surface and the bottom surface of the polymer substrate using a UV-cured and thermally cured product of a UV-curable and thermally curable buffer composition. A method for producing the multi-layer film is also disclosed. | 11-24-2011 |
20110287233 | LAMINATED PLASTIC SUBSTRATE, AND A PRODUCTION METHOD FOR THE SAME - The present invention provides a multilayered plastic substrate that simultaneously satisfies improvement in high temperature thermal deformation according to low linear expansion coefficient and excellent dimensional stability and excellent gas barrier property, and is capable of being used instead of a glass substrate that has brittleness and heavy disadvantages without a problem caused by a difference in linear expansion coefficient between layers, and a method for manufacturing the same. | 11-24-2011 |
20120193768 | MULTIPLE-LAYER, MULTIPLE FILM HAVING THE SAME AND ELECTRONIC DEVICE HAVING THE SAME - The present invention provides a multiple layer that comprises two or more first inorganic material layers; and one or more second inorganic material layers that are positioned between the two first inorganic material layers and have the thickness of less than 5 nm, in which the first inorganic material layer is formed of one or more materials that are selected from silicon oxides, silicon carbide, silicon nitride, aluminum nitride and ITO, and the second inorganic material layer is formed of one or more materials that are selected from magnesium, calcium, aluminum, gallium, indium, zinc, tin, barium, and oxides and fluorides thereof, a multiple film that comprises the multiple layer, and an electronic device that comprises the multiple film. | 08-02-2012 |
Patent application number | Description | Published |
20090068822 | METHOD FOR PREPARING SUBSTRATE FOR GROWING GALLIUM NITRIDE AND METHOD FOR PREPARING GALLIUM NITRIDE SUBSTRATE - Provided is a method for preparing a substrate for growing gallium nitride and a gallium nitride substrate. The method includes performing thermal cleaning on a surface of a silicon substrate, forming a silicon nitride (Si | 03-12-2009 |
20090111250 | METHOD FOR PREPARING COMPOUND SEMICONDUCTOR SUBSTRATE - Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process. | 04-30-2009 |
20090155986 | METHOD FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALLINE SUBSTRATE USING SELF-SPLIT - The present invention relates to a method for manufacturing a gallium nitride single crystalline substrate, including (a) growing a gallium nitride film on a flat base substrate made of a material having a smaller coefficient of thermal expansion than gallium nitride and cooling the gallium nitride film to bend convex upwards the base substrate and the gallium nitride film and create cracks in the gallium nitride film; (b) growing a gallium nitride single crystalline layer on the crack-created gallium nitride film located on the convex upward base substrate; and (c) cooling a resultant product having the grown gallium nitride single crystalline layer to make the convex upward resultant product flat or bend convex downwards the convex upward resultant product and at the same time to self-split the base substrate and the gallium nitride single crystalline layer from each other at the crack-created gallium nitride film interposed therebetween. | 06-18-2009 |
20100330784 | METHOD FOR PREPARING COMPOUND SEMICONDUCTOR SUBSTRATE - Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process. | 12-30-2010 |
20110272703 | SEMICONDUCTOR DEVICE, LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed are a semiconductor device, a light emitting device and a method for manufacturing the same. The semiconductor device includes a substrate, a plurality of rods disposed on the substrate, a plurality of particles disposed between the rods and on the substrate, and a first semiconductor layer disposed on the rods. The method for manufacturing the semiconductor device includes preparing a substrate, disposing a plurality of first particles on the substrate, and forming a plurality of rods by etching a portion of the substrate by using the first particles as an etch mask. The semiconductor device effectively reflects in an upward direction light by the above particles, so that light efficiency is improved. The rods are easily formed by using the first particles. | 11-10-2011 |
Patent application number | Description | Published |
20100279092 | MULTIPLE-LAYER FILM AND METHOD FOR MANUFACTURNIG THE SAME - The present invention provides a multiple layer film comprising a substrate layer and a multiple layer having two or more sub-layers formed by use of a single target material, provided on at least one side of the substrate layer; and a method for manufacturing the same. | 11-04-2010 |
20130177710 | COMPOSITE MATERIALS, COMPOSITE FILM MANUFACTURED BY USING THE SAME AND METHOD FOR MANUFACTURING COMPOSITE FILM - The present invention provides a composite material comprising a glass cloth; and an organic-inorganic hybrid composition comprising diphenylsilanediol and alkoxy silane, a composite film manufactured by using the same, and a method for manufacturing the composite film. | 07-11-2013 |
20130260059 | RETARDATION COMPENSATORS OF NEGATIVE C-TYPE FOR LIQUID CRYSTAL DISPLAY - Disclosed is a negative C-type retardation compensator for a liquid crystal display. The negative C-type retardation compensator for the liquid crystal display includes polyarlate having a thio group or a sulfur oxide group in a polymer main chain thereof Accordingly, the retardation compensator has an absolute value of negative retardation that is larger in a thickness direction that a retardation compensator which includes polyarylate having no thio group or sulfur oxide group in a polymer main chain thereof even though the retardation compensator having the thio group or sulfur oxide group and the retardation compensator having no thio group or sulfur oxide group are the same as each other in thickness. Thereby, the negative C-type retardation compensator for liquid crystal displays is capable of being desirably applied to the liquid crystal displays. | 10-03-2013 |
20140087162 | MULTI-LAYERED PLASTIC SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - A multi-layered plastic substrate is provided, in which a first organic or organic-inorganic hybrid layer, a gas barrier layer and a second organic or organic-inorganic hybrid layer are stacked on both surfaces of two plastic films joined to each other. At least one of the first and second organic or organic-inorganic hybrid layers is formed of a composition including at least one of: at least one organic silane selected from the group consisting of compounds represented by Formula 1, polycaprolactone, polytetrahydrofuran, epoxy and xylene glycol. | 03-27-2014 |
Patent application number | Description | Published |
20110129953 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE - A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first support substrate, etching the first support substrate by using the passivation layer as a mask, and removing the passivation layer and thereby exposing the second support substrate and the GaN epitaxial layer. | 06-02-2011 |
20110143525 | NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF - The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses applied larger when growing a nitride semiconductor film on the base substrate from a central portion of the base substrate towards a peripheral portion. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion. | 06-16-2011 |
20120003824 | METHOD FOR MANUFACTURING GALLIUM NITRIDE WAFER - A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer. | 01-05-2012 |
Patent application number | Description | Published |
20120089719 | METHODS AND APPARATUS FOR OBTAINING A SERVICE - Methods and apparatus are provided for obtaining a service is provided. Information about an external device is received at a terminal from the external device. It is determined whether the external device has been registered based on the information about the external device. Service information associated with the external device is provided when at least the external device has been registered. | 04-12-2012 |
20130084813 | METHOD AND APPARATUS FOR PROVIDING CONTENT - A method of providing content is provided. The method includes providing an interface for providing a service based on information regarding a wireless transceiver positioned close to an apparatus for providing content, the information being received from the wireless transceiver; requesting a waiting number for providing the service via the interface; and receiving the waiting number for providing the service, a waiting time, and content based on the waiting time. | 04-04-2013 |
20130095790 | METHOD AND APPARATUS FOR CONTROLLING DEVICE - A method and an apparatus for controlling a device are provided. Information regarding a second external device, which was received by a first external device, is received from the first external device. The second external device is authenticated based on the information regarding the second external device. Position information regarding the second external device is detected. Control information regarding the first external device is transmitted to the first external device. The control information is based on the position information. | 04-18-2013 |
20130095858 | METHOD AND APPARATUS FOR PROVIDING SERVICE AND SERVICE INTERFACE BASED ON POSITION - A method and apparatus for providing a position-based service is provided. The method includes detecting a current position; determining whether the current position is included in a previously set area-of-interest; and scanning for a wireless transceiver in response to a determination that the current position is included in the set area-of-interest. | 04-18-2013 |