Hitoshi Sato
Hitoshi Sato, Santa Barbara, CA US
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20100275837 | OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH - A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN. | 11-04-2010 |
Hitoshi Sato, Ibaraki JP
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20090092736 | Method for Production of Chlorogenic Acid-Containing Material - The present invention relates to a method for production of a chlorogenic acid-containing material, including the method of contacting a coffee bean extract (A) with a mixture of a water-miscible organic solvent (B) and water (C) under such conditions that the weight ratio between the components (B) and (C) obtained after the mixture is mixed with the component (A) becomes 70/30 to 99.5/0.5; and recovering a solid portion. | 04-09-2009 |
20090246851 | METHOD FOR PRODUCTION OF ENZYME - The present invention provides a process for producing an enzyme, which includes recovering an enzyme by microfiltering an enzyme-containing solution, having a cell density of 1% (v/v) or less and an enzyme concentration of 1% (w/v) or more in terms of the amount of proteins, with a cationic surfactant added in an amount of 0.01 to 1% (w/v) to the enzyme-containing solution. | 10-01-2009 |
20100021615 | TEA EXTRACT - This invention relates to a tea extract, which is reduced in bitterness, sourness and coarse taste, has a good affinity with various beverages, and contains non-polymer catechins that are highly stable in a sterilized beverage to which the tea extract is added. | 01-28-2010 |
20100278972 | PROCESS FOR PRODUCING PURIFIED TEA EXTRACT - A purified tea extract with suppressed bitterness and astringency is economically produced in high yield and high efficiency by dramatically accelerating an enzyme reaction with addition of tannase in a smaller amount. A process of the present invention for the production of a purified tea extract includes a first step which comprises eliminating water-insoluble solids from a first tea extract and then obtaining a second tea extract so that a turbidity falls into a range from 0.1 to 100 NTU when a concentration of the non-polymer catechins is adjusted to 0.7 wt %, and a second step which comprises subjecting the second tea extract at a concentration of the non-polymer catechins of from 0.05 to 4.0 wt % to tannase treatment. | 11-04-2010 |
20120121761 | METHOD FOR PRODUCTION OF TEA EXTRACT - This invention relates to a process for producing a tea extract. The process includes subjecting a first tea extract solution, which has been obtained from tea, to solid-liquid separation so that a turbidity becomes 200 NTU or lower when a concentration of non-polymer catechins is adjusted to 1 wt %, thereby obtaining a second tea extract solution in which a concentration of (A) non-polymer catechins is from 0.2 to 5 wt % and a concentration of non-polymer catechins in solid content is from 15 to 80 wt %; and then subjecting the second tea extract solution to a heat treatment at a temperature of from 95 to 140° C. for an F value of from 0.05 to 40 min. | 05-17-2012 |
Hitoshi Sato, Kanagawa JP
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20090072262 | (Al,In,Ga,B)N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE - A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of In | 03-19-2009 |
20090250686 | METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES - A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed. | 10-08-2009 |
20090310640 | MOCVD GROWTH TECHNIQUE FOR PLANAR SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES - A III-nitride optoelectronic device comprising a light emitting diode (LED) or laser diode with a peak emission wavelength longer than 500 nm. The III-nitride device has a dislocation density, originating from interfaces between an indium containing well layer and barrier layers, less than 9×10 | 12-17-2009 |
20100155778 | METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (AL,IN,GA,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION - A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al, In, Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an In | 06-24-2010 |
20120056158 | LIGHT EMITTING DIODES WITH A P-TYPE SURFACE BONDED TO A TRANSPARENT SUBMOUNT TO INCREASE LIGHT EXTRACTION EFFICIENCY - An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane. | 03-08-2012 |
20120074525 | MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE - A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an In | 03-29-2012 |
20120187415 | METHOD FOR CONDUCTIVITY CONTROL OF (Al,In,Ga,B)N - A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 | 07-26-2012 |
20120199809 | METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) GROWTH OF HIGH PERFORMANCE NON-POLAR III-NITRIDE OPTICAL DEVICES - A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes. | 08-09-2012 |
20120205620 | METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES - A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed. | 08-16-2012 |
20120205625 | (Al, In, Ga, B)N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE - A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of In | 08-16-2012 |
20130015492 | OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH - A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN. | 01-17-2013 |
20130168833 | METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION - A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an In | 07-04-2013 |
20140183579 | MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE - A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an In | 07-03-2014 |
20140191244 | METHOD FOR CONDUCTIVITY CONTROL OF (Al,In,Ga,B)N - A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 | 07-10-2014 |
Hitoshi Sato, Aomori JP
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20080197869 | ELECTRICAL CONNECTING APPARATUS - To restrain misregistration of tips due to change in temperature, an electrical connecting apparatus is used for connection of a tester, and electrical connection terminals of a device under test to undergo electrical test by the tester. The electrical connecting apparatus comprises a probe board having a plurality of probe lands on its underside; and a plurality of contacts having tip portions to be brought into contact with a base end portion fixed at the respective probe lands and the connection terminals of the device under test. The measure from the tip of each contact and the probe land ranges from 1.1 to 1.3 mm, and the coefficient of thermal expansion of the probe board is greater than the coefficient of thermal expansion of the device under test within the range from 1 to 2 ppm/° C. | 08-21-2008 |
20090058440 | PROBE ASSEMBLY, METHOD OF PRODUCING IT AND ELECTRICAL CONNECTING APPARATUS - A probe assembly for use in electrical measurement of a device under test. The probe assembly comprises a plate-like probe base plate with bending deformation produced in a free state without load, and a plurality of probes formed on one face of the probe base plate to project from the face. All the tips of the probes are positioned on the same plane parallel to an imaginary reference plane of the probe base plate. | 03-05-2009 |
20090160469 | ELECTRIC CONNECTING APPARATUS - In an electrical connecting apparatus, a thermal deformation restriction member, a reinforcing plate, and an auxiliary member are made of materials having smaller thermal expansion coefficients in this order, and a wiring board supporting a probe assembly is coupled with the reinforcing plate. The auxiliary member has a void inside the coupling region with the reinforcing plate. The void receives the deformed part when the center portion of the wiring board is deformed toward the reinforcing plate. Thus, the thermal deformation restriction member, the reinforcing plate, and the auxiliary member function as a three-layer bimetal having a sandwich structure, and the thermal deformation of the wiring board is restricted effectively. | 06-25-2009 |
20100134121 | ELECTRICAL CONNECTING APPARATUS - An electrical connecting apparatus for use in an electrical inspection of a tester and a device under test. The electrical connecting apparatus is provided with a probe assembly to be tightened by tightening screw members toward the support member and having a wiring board interposed between itself and a support member. In order to prevent deformation of the probe board of the probe assembly due to tightening of the screw members, a spacer disposed to penetrate the wiring board is between the support member and probe board and penetrated by the screw members. Both end faces of the spacer are convex spherical surface. | 06-03-2010 |
Hitoshi Sato, Nagano-Shi JP
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20090152693 | SEMICONDUCTOR DEVICE - A semiconductor device includes a wiring board having: plural stacked insulating layers; test pads and external connection pads which are disposed on a face of the plural stacked insulating layers located on the side opposite to that where another wiring board is connected; first wiring patterns which electrically connect internal connection pads with the test pads; and second wiring patterns which electrically connect semiconductor element mounting pads with the external connection pads. The external connection pads are placed on the inner side of the test pads. | 06-18-2009 |
20100127370 | WIRING BOARD, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR ELEMENT - On a semiconductor element loading face, wiring patterns are drawn out from those formed in the vicinity of the edge of the semiconductor element of the loading pads formed to correspond to the electrode terminals of the semiconductor element, and connected to via pads formed in the vicinity of the edge of the semiconductor element loading face; area pads constructed of the loading pads corresponding to the electrode terminals formed in the central region of the semiconductor element and its vicinity are electrically connected to external connecting terminal pads formed in the central region on the other side of the wiring board and its vicinity, through the nearest area pad vias encircled by the external connecting terminal pads and passing through the wiring board and the wiring patterns; and a plurality of the loading pads constituting the area pads commonly use one of the area pad vias. | 05-27-2010 |
Hitoshi Sato, Ichikawa JP
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20100077566 | HINGE MECHANISM - A hinge mechanism in which two housings are respectively connected to a first rotation shaft and a second rotation shaft that are arranged perpendicular to each other and the housing are arbitrarily openable about either one of the shafts is provided. In the hinge mechanism | 04-01-2010 |
Hitoshi Sato, Minamitsugaru-Gun JP
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20100066396 | ELECTRICAL CONNECTING APPARATUS - An electrical connecting apparatus for use in electrical measurement of a device under test comprises a supporting member and a flat plate-like probe base plate. On one surface of the probe base plate are provided multiple probes abutting on electrical connecting terminals of the device under test undergoing an electrical test. Also, on the other surface of the probe base plate is formed a securing portion provided with a screw hole opened at the top portion. It further has a generally cylindrical spacer and a screw member passing through the spacer and whose tip end is screwed in the screw hole of the securing portion. As for the spacer, movement in the axial direction is restricted in relation to the supporting member by a restricting means. The spacer has a head portion whose underside is mounted on the other surface of the supporting member and a body portion communicating with the head portion at one end, arranged to pass through a through hole formed in the supporting member, and whose other end is arranged to abut on the top face of the securing portion. | 03-18-2010 |
Hitoshi Sato, Yamanashi JP
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20100043617 | SHEET CUTTER - The present invention provides a sheet cutter that can cut the sheet cleanly without being left uncut or torn off in cutting the sheet and is cheap and very compact by reducing the thickness of a movable knife pressure welding member. | 02-25-2010 |
Hitoshi Sato, Okayama JP
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20090285254 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device has a red laser element and an infrared laser element on a substrate. The red laser element has a double hetero structure in which an InGaP-based or AlGaInP-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. The infrared laser element has a double hetero structure in which a GaAs-based or AlGaAs-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. Provided that a first electrode formed over the second conductivity type cladding layer has a width W | 11-19-2009 |
20110222568 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a first cladding layer | 09-15-2011 |
20110286487 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes, on an n-type GaAs substrate, an n-type GaAs contact layer, an n-type first quantum well heterobarrier layer, an n-type AlGaInP cladding layer, a strained quantum well active layer (a first guide layer, GaInP well layers, AlGaInP barrier layers, and a second guide layer), a p-type AlGaInP cladding layer, a p-type GaInP intermediate layer, and a p-type GaAs contact layer, which are formed in this stated order. The semiconductor laser device can perform high-temperature and high-power operation at a lower operating voltage. | 11-24-2011 |
Hitoshi Sato, Ueda-Shi JP
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20090251506 | INK JET PRINTER, INK SUPPLY MECHANISM FOR THE INK JET PRINTER, AND INK SUPPLY METHOD - An ink jet printer system includes an ink jet head, a plurality of ink supplying cartridges, an ink flow channel and a control device. The ink flow channel connects the ink jet head and the plurality of ink supplying cartridges to supply ink from the plurality of ink supplying cartridges to the ink jet head. The control device is configured to sequentially supply ink from each of the plurality of ink supplying cartridges to the ink jet head. | 10-08-2009 |
Hitoshi Sato, Yokohama-Shi JP
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20090161811 | REFUELING SUPPORT SYSTEM - Problem: To provide a refueling support system in which fuel transfer procedure establishing operations and associated operations precisely reflecting the fuel burnup conditions can be efficiently performed at the time of scheduled outages at a nuclear power plant. | 06-25-2009 |
Hitoshi Sato, Zam-Shi JP
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20090039367 | LIGHT EMITTING DIODES WITH A P-TYPE SURFACE BONDED TO A TRANSPARENT SUBMOUNT TO INCREASE LIGHT EXTRACTION EFFICIENCY - An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane. | 02-12-2009 |
Hitoshi Sato, Tokyo JP
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20080313855 | Two-Axis Hinge Device With Rotation Regulating Function - A two-axis hinge device with rotation regulating function including the rotation regulating function capable of wiring by passing a harness through a through hole of an axis member, simple in structure, and low in cost is provided. A folding axis rotatably supporting one case and a rotational axis rotatably supporting the other case are set to intersect each other, a rotation allowing portion is formed by recessing an outer circumferential side surface of a rotational operation range restricting head portion rotatably supported by a base frame and arranged on an end of the folding axis, a rotational operation range restricting deformed head portion arranged on an end of the rotational axis so as to face the rotational operation range restricting head portion, a restricting structure portion is formed at the deformed head portion so as to restrain rotation of the folding axis by abutting the outer circumferential side surface of the rotation allowing portion on an end surface and so as to restrain rotation of the rotational axis when the outer circumferential side surface abuts on the end surface of the restricting head portion, and the rotation of the rotational axis is restricted to correspond to an opening or closing angle of the folding axis. | 12-25-2008 |
20150065909 | CENTRAL SENSITIZATION DIAGNOSIS DEVICE AND METHOD FOR OPERATING SAME - An object of the present invention is to provide a system for performing objective examination of central sensitization, in particular, a system for objectively determining the presence or absence of central sensitization in a chronic pain patient. The present invention provides a device for diagnosing the presence or absence of central sensitization, the device including: stimulation output means for outputting thermal stimulation which can be perceived by a subject; first input means capable of inputting a measurement start signal; second input means capable of inputting a measurement end signal; and measurement control means for measuring time between an input signal from the first input means and an input signal from the second input means. The measurement control means determines that the central sensitization is present when the time between the input signal from the first input means and the input signal from the second input means is longer than t seconds (where t represents 30 seconds or more and less than 90 seconds). | 03-05-2015 |
Hitoshi Sato, Chiba JP
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20110203077 | SEMI-AUTOMATIC HINGE WITH ROTATIONAL ANGLE RESTRICTING MECHANISM - The object of the present invention is to reduce the angle of automatic opening of a liquid crystal portion to a value less than a central angle of 70° to 90° of conventional portable phones, etc. This object can be achieved by a single-shaft semi-automatic hinge, wherein a first cam and a second cam fitted on the single shaft of the hinge passing therethrough are abutted on each other with pressure application by an elastic member, thereby generating a rotational friction torque; a region of the first cam and the second cam in which the liquid crystal portion can rotate from a state in which the main body portion and the liquid crystal portion are folded to a fully open state is set narrower than a region in which the hinge can rotate; a protruding body is formed on an abutment surface of the first cam; in a central angle range of 0° to 180° of an abutment surface of the second cam, a notched portion is formed at 0° and then a convex top portion, a slanted descending surface, and a deep valley portion are formed successively in the rotation direction in the order of description from the rotation start site and the convex top portion is provided at a central angle of less than 50°; and a rotational angle restricting function, which prevents the protruding body of the first cam from sliding down into the notched portion of the second cam when the main body portion and the liquid crystal portion are folded, is formed between a central angle of 0° and the convex top portion. | 08-25-2011 |
Hitoshi Sato, Kanagawa-Ken JP
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20110224966 | SYSTEM AND METHOD FOR EVALUATING NUCLEAR REACTOR FUELING PLAN - A nuclear reactor fueling plan evaluating system and method in which reactor shutdown margin evaluation are performed quickly and accurately. A fueling procedure formulating part and an input setting part having databases are included. A maximum worth control rod candidate selecting part having a control rod worth calculating means which inputs fuel loading and control rod patterns of each fueling act, inputs a relatively simple second physics model, calculates control rod worth from the difference between the degree of subcriticality of a reactor core in a state that all control rods are inserted and the degree of subcriticality of the reactor core in a state that a single control rod is withdrawn for each fueling step, and selects a determined number of maximum worth control rod candidates. A reactor shutdown margin calculating part inputs a subdivided first physics model and calculates reactor shutdown margin for each maximum worth control rod candidate. | 09-15-2011 |
Hitoshi Sato, Utsunomiya-Shi JP
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20120086931 | Stage device including a heat insulating sheet supported by an auxiliary member - A stage device that includes a base. A stage movable portion is movable along a surface of the base. An interferometer measures a position of the stage movable portion using measurement light. At least one of a piping element and a wiring element are connected to the stage movable portion. An auxiliary member, including a plurality of members connected with each other, guides a bend of at least one of the piping element and the wiring element. A heat insulating sheet is supported by the auxiliary member. The heat insulating material is provided between a space through which the measurement light of the interferometer passes, and the at least one of the piping element and the wiring element. | 04-12-2012 |
Hitoshi Sato, Kamisu-Shi JP
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20120244255 | METHOD FOR PRODUCING PURIFIED TEA EXTRACT - Provided is a method for producing a purified tea extract, which can satisfy both the yield of the non-polymer catechins and the removal rate of gallic acid at high levels. The method is characterized in that a tea extract, which contains an aqueous solution of an organic solvent, brought into contact with an anion exchange resin. | 09-27-2012 |
Hitoshi Sato, Narita-Shi JP
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20130273220 | METHOD FOR PRODUCING PURIFIED TEA EXTRACT - Provided is a production method for a purified tea extract, which enables efficiently removing gallic acid and collecting the non-polymer catechins in a high yield without impairing original taste and flavor of tea. The production method for a purified tea extract according to the present invention comprises bringing a tea extract into contact with an OH-type anion exchange resin and an H-type cation exchange resin. | 10-17-2013 |
20140135391 | METHOD FOR MANUFACTURING REFINED CHLOROGENIC ACIDS COMPOSITION - Provided is a method for producing a chlorogenic acids composition having a reduced caffeine content and good taste and favor, capable of efficiently recovering high purity of chlorogenic acids from a chlorogenic acids-containing composition. The method for producing a purified chlorogenic acids composition comprises a step A of bringing a chlorogenic acids-containing composition into contact with a cation exchange resin; a step B of bringing the liquid obtained in the step A into contact with an anion exchange resin; and a step C of bringing an eluent into contact with the anion exchange resin after the step B. | 05-15-2014 |
Hitoshi Sato, Toyota-Shi JP
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20140330468 | ELECTRIC-POWER SUPPLY SYSTEM, AND VEHICLE - A vehicle is capable of supplying electric power to an electric load external to the vehicle. The vehicle includes an electric-power generation device generating the electric power, a first connection terminal for electrically connecting the vehicle to another first vehicle to output the electric power generated by the electric-power generation device via the other first vehicle to the electric load, a second connection terminal for connecting another second vehicle to the vehicle to electrically connect the other second vehicle with the vehicle in parallel with respect to the electric load, and a system controller operating the electric-power generation device based on an electric power command received from the other first vehicle. | 11-06-2014 |