Patent application number | Description | Published |
20090261436 | NEGATIVE-RESISTANCE DEVICE WITH THE USE OF MAGNETO-RESISTIVE EFFECT - A magneto-resistive device has a magnetic free layer ( | 10-22-2009 |
20090322419 | AMPLIFYING APPARATUS USING MAGNETO-RESISTIVE DEVICE - An amplifying apparatus includes a magneto-resistive device which has a magnetic free layer, a magnetic pinned layer having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer provided in between the magnetic free layer and the magnetic pinned layer. The amplifying apparatus has a first electrode layer provided in a magnetic free layer side of the magneto-resistive device, and a second electrode layer provided in a magnetic pinned layer side of the magneto-resistive device. The amplifying apparatus further includes a direct-current bias power-source for applying a direct-current bias to the magneto-resistive device, and a load resistor. The amplifying apparatus continually causes the change of a magnetization direction of the magnetic free layer to make the magneto-resistive device show negative resistance, and thereby amplifies an input signal. | 12-31-2009 |
20110073970 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer. | 03-31-2011 |
20120068285 | MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MANUFACTURING MAGNETORESISTIVE EFFECT ELEMENT - According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more. | 03-22-2012 |
20120069640 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a first and second magnetic layers having an easy axis of magnetization in a direction perpendicular to a film plane; and a first nonmagnetic layer interposed between the first and second magnetic layers, at least one of the first and second magnetic layers including a structure formed by stacking a first and second magnetic films, the second magnetic film being located closer to the first nonmagnetic layer, the second magnetic film including a structure formed by repeating stacking of a magnetic material layer and a nonmagnetic material layer at least twice, the nonmagnetic material layers of the second magnetic film containing at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V, and Cr, one of the first and second magnetic layers having a magnetization direction that is changed by applying a current. | 03-22-2012 |
20120099369 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer. | 04-26-2012 |
20120241881 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including Mn | 09-27-2012 |
20130288397 | MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MANUFACTURING MAGENTORESISTIVE EFFECT ELEMENT - According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more. | 10-31-2013 |
20140077319 | MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF - According to one embodiment, a magnetoresistive effect element includes a multilayer film including a transition metal nitride film, an antiferromagnetic film, a first ferromagnetic film, a nonmagnetic film, and a perpendicular magnetic anisotropic film stacked in that order. The first ferromagnetic film has a negative perpendicular magnetic anisotropic constant. Magnetization of the first ferromagnetic film is caused to point in a direction perpendicular to the film surface forcibly by an exchange-coupling magnetic field generated by the antiferromagnetic film. | 03-20-2014 |
20140159177 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including Mn | 06-12-2014 |
20140264673 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - According to one embodiment, a magnetoresistive element includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having an invariable magnetization direction; and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer and including an MgFeO film, wherein the MgFeO film contains at least one element selected from a group consisting of Ti, V, Mn, and Cu. | 09-18-2014 |
20140269038 | MAGNETIC MEMORY - A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer. | 09-18-2014 |
20150076635 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including Mn | 03-19-2015 |
20160118098 | MAGNETIC MEMORY - A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer. | 04-28-2016 |
Patent application number | Description | Published |
20120239772 | COMMUNICATION SYSTEM AND COMMUNICATING METHOD - A communication system includes a first terminal, a second terminal, and a third terminal. The first terminal transmits message data addressed to the third terminal to plural terminals. When the second terminal receives the message data and confirms that a destination thereof is not the second terminal, the second terminal transfers the received message data. When the third terminal receives the message data and confirms that the destination thereof is the third terminal, the third terminal transmits response data corresponding to the received message data to the first terminal. A priority for transmission of the response data is set higher than that of the transferred message data, and a period of time from reception of the message data until the transmission of the corresponding response data is shorter than a period of time from reception of the message data until the transfer of the message data. | 09-20-2012 |
20120250561 | DATA COLLECTION SYSTEM, DATA COLLECTION DEVICE, WIRELESS COMMUNICATION DEVICE, AND COMMUNICATION METHOD FOR COLLECTING DATA - A wireless communication device in a data collection system starts measuring a time when the wireless communication device receives a wireless signal from a data collection device. The wireless communication device changes the wireless channel, transmits a detection signal for detecting the data collection device, and starts measuring a time after transmitting the detection signal when the wireless communication device is unable to receive a next wireless signal from the data collection device even after passage of a predetermined time since the wireless communication device has previously received the wireless signal. The wireless communication device changes the wireless channel to be used, depending on whether the wireless communication device has received a response signal from the data collection device in response to the detection signal within a predetermined time. | 10-04-2012 |
20130032996 | DRAWING APPARATUS - An image forming apparatus is provided that can surely position a unit in an apparatus body with a simple configuration where the number of components is small. A drawing apparatus, which draws a sheet feeding cassette as a unit to a predetermined position of the apparatus body to position it, includes : a leaf spring that is an elastic member to jump-buckle; an engaging unit disposed in the leaf spring; and an engaged unit engaged with the engaging unit. When the unit is loaded on the apparatus body, the engaging unit engages the engaged unit, the elastic member jump-buckles, and accordingly the unit is drawn to the predetermined position of the apparatus body. | 02-07-2013 |
20140376377 | COMMUNICATION SYSTEM AND AUTOMATIC METERING SYSTEM - A communication system according to the present invention includes a plurality of ad hoc communication networks each formed by one or more communication units and one gateway and includes a monitoring server that monitors the ad hoc communication networks. The monitoring server determines on the basis of a monitoring result of load states of the gateways and a monitoring result of a congestion state of radio traffic whether it is necessary to carry out load distribution control for moving a communication unit subordinate to a first gateway to be subordinate to a second gateway set around the first gateway and, when determining that it is necessary to carry out the load distribution control, instructs at least one gateway of the first gateway and the second gateway to broadcast-deliver a signal including control information and instructing reselection of a gateway set as a participation destination. | 12-25-2014 |
20140376949 | IMAGE FORMING APPARATUS - An image forming apparatus includes a fixing unit heating an image formed on a recording medium and disposed along a conveying path conveying the recording medium. The conveying path includes a first guide plate, discharge guide plate portions and second guide plate portion as conveyance guide plates guiding the recording medium. Partition walls and vertical walls are disposed at positions facing these guide plate portions. The air current guide portion guides air taken in from intake ports through an intake guide portion between the respective guide plate portions and each walls. | 12-25-2014 |
20150055992 | IMAGE FORMING APPARATUS - In a constitution provided with no primary-transfer roller, in order to ensure a contact length between each of photosensitive drums and an intermediary transfer belt, the photosensitive drums are disposed in entering amounts at a plurality of levels with respect to a stretching surface of the intermediary transfer belt, and therefore an apparatus is upsized in a height direction. In order to avoid this, four image bearing members are arranged, along the intermediary transfer belt, in the same entering amount with respect to the stretching surface of the intermediary transfer belt, and a depressing member for depressing a belt surface between two central image bearing members toward an outside is provided. | 02-26-2015 |