Patent application number | Description | Published |
20130042803 | Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device - A substrate processing apparatus includes: a process chamber having an object to be heated therein and configured to process a plurality of substrates; a substrate holder configured to hold the substrates with an interval therebetween in a vertical direction in the process chamber; a first heat exchange unit supporting the substrate holder from a lower side thereof in the process chamber and configured to perform a heat exchange with a gas in the process chamber; a second heat exchange unit provided in the process chamber, the second heat exchange unit being horizontally spaced apart from the first heat exchange unit with a gap therebetween and being configured to perform a heat exchange with the gas in the process chamber; and an induction heating unit configured to subject the object to be heated to an induction heating from an outer side of the object to be heated. | 02-21-2013 |
20130066857 | INFORMATION MANAGING METHOD, INFORMATION SEARCHING METHOD AND DATA DISPLAYING METHOD - An information managing method for managing information based upon an electronic message containing apparatus information or event information transmitted from a substrate processing apparatus, the information managing method comprising: storing the apparatus information of the substrate processing apparatus at a transmission time of the electronic message in a first apparatus information storage unit; comparing the event information with a condition for accumulating the apparatus information when the electronic message is transmitted; and accumulating the apparatus information in a second apparatus information storage unit by associating the apparatus information with a time stamp of a generation of the event information when the condition is satisfied. | 03-14-2013 |
20130068159 | Manufacturing Method of Semiconductor Device and Substrate Processing Apparatus - A substrate processing apparatus includes a processing chamber that forms a thin film on a main surface of a plurality of substrates and a heater provided outside of the processing chamber, for heating an inside of the processing chamber. The substrate processing apparatus also includes a first gas supply part configured to supply a first processing gas, a second gas supply part configured to supply the first processing gas to a middle part of a gas flow, a third gas supply part configured to supply a second processing gas, an exhaust part and a controller that causes the first processing gas and the second processing gas to react with each other in the processing chamber to form an amorphous material, and form a thin film of the plurality of substrates. | 03-21-2013 |
20130072002 | Batch-Type Remote Plasma Processing Apparatus - A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes. | 03-21-2013 |
20130075800 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A semiconductor device manufacturing method includes loading a substrate to a processing chamber, a gate insulating film or a capacitor insulating film being formed on a surface of the substrate; forming an electrode, which includes a conductive oxide film and to which an additive that modulates a work function of the conductive oxide film is added, on the substrate; and unloading the substrate, on which the electrode is formed, from the processing chamber. | 03-28-2013 |
20130078789 | Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium - A substrate processing apparatus includes a process chamber accommodating a substrate including a thin film formed at a film-forming temperature; a gas supply unit for supplying a process gas including oxygen and/or nitrogen onto the substrate; an excitation unit for exciting the process gas supplied into the process chamber; a heating unit for heating the substrate; an exhaust unit for exhausting an inside of the process chamber; and a control unit for controlling the gas supply unit, the excitation unit, the heating unit and the exhaust unit such that a temperature of the substrate is equal to or lower than the film-forming temperature when the substrate is processed by heating the substrate by the heating unit, exciting the process gas supplied from the gas supply unit by the excitation unit, and supplying the process gas excited by the excitation unit onto a surface of the substrate. | 03-28-2013 |
20130078816 | Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium - A substrate processing apparatus includes: a process chamber accommodating a substrate including a polysilicon film having an oxygen-containing layer formed thereon; a heating unit in the process chamber to heat the substrate; a gas supply unit to supply a process gas containing nitrogen and hydrogen to the substrate in the process chamber; an excitation unit to excite the process gas supplied into the process chamber; an exhaust unit to exhaust an inside of the process chamber; and a control unit to control at least the heating unit, the gas supply unit, the excitation unit and the exhaust unit for modifying the oxygen-containing layer into an oxynitride or nitride layer by heating the substrate to a predetermined temperature using the heating unit, exciting the process gas supplied by the gas supply unit using the excitation unit, and supplying the process gas excited by the excitation unit to the substrate. | 03-28-2013 |
20130078823 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device including: mounting a substrate on a substrate mounting member that is disposed in a reaction container; heating the substrate at a predetermined processing temperature and supplying a first gas and a second gas to the substrate to process the substrate; stopping supply of the first gas and the second gas, and supplying an inert gas into the reaction container; and unloading the substrate to outside the reaction container. | 03-28-2013 |
20130095668 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS - Provided is a semiconductor device manufacturing method of forming a film of less than one atomic layer on a substrate. The method includes (a) supplying a source gas into a processing chamber accommodating the substrate to adsorb the source gas on the substrate; (b) supplying a reactive gas different from the source gas into the processing chamber to cause a reaction of the reactive gas with the source gas adsorbed on the substrate before the source gas is saturatively adsorbed on the substrate; (c) removing an inner atmosphere of the processing chamber; and (d) supplying a modifying gas into the processing chamber to modify the source gas adsorbed on the substrate. | 04-18-2013 |
20130095669 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. | 04-18-2013 |
20130098291 | SUBSTRATE TREATMENT EQUIPMENT AND MANUFACTURING METHOD OF SUBSTRATE - The invention aims to provide substrate treatment equipment that can automatically collect a substrate in a normal condition without needing manual operation. The equipment includes a substrate holder | 04-25-2013 |
20130102132 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes: accommodating a substrate in a processing chamber; and supplying an organosilicon-based gas into the processing chamber that is heated to form a film including silicon and carbon on the substrate. In the forming of the film including silicon and carbon, a cycle is performed a predetermined number of times. The cycle includes supplying the organosilicon-based gas into the processing chamber and confining the organosilicon-based gas in the processing chamber, maintaining a state in which the organosilicon-based gas is confined in the processing chamber, and exhausting an inside of the processing chamber. | 04-25-2013 |
20130102159 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE TRANSFER METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a substrate processing apparatus, including: a plurality of process chambers in which a prescribed number of each type of substrates is processed; and a controller configured to decide the number of dummy substrates so that the number of the dummy substrates used in each process chamber is approximately the same between the process chambers, when the number of the dummy substrates used in each process chamber is decided so that the number of each type of substrates used in each process chamber reaches the prescribed number. | 04-25-2013 |
20130102161 | Method of Manufacturing Semiconductor Device, Cleaning Method, Substrate Processing Apparatus and Non-Transitory Computer-Readable Recording Medium - A method of manufacturing a semiconductor device includes forming a film on a substrate in a process chamber, and removing a deposit from at least a portion of an inside of the process chamber after forming the film, wherein removing the deposit includes performing a cycle a predetermined number of times, the cycle including a first process of supplying a first gas for etching the deposit into the process chamber and a second process of supplying a second gas into the process chamber so as to increase a pressure in the process chamber, the second gas being incapable of etching a member constituting the process chamber or having an etchability against the member lower than that of the first gas. | 04-25-2013 |
20130114749 | WIRELESS COMMUNICATIONS DEVICE AND METHOD - A wireless communications device and method carries out a process including estimating channel information based on a received signal; generating pseudo-transmission signal point candidates based on the channel information and/or transmission signal point candidates; and generating a replica of the received signal based on the pseudo-transmission signal point candidates and the estimated channel information. The process further includes performing matrix operations on the basis of the received signal and the replica thereof; selecting pseudo-transmission signal point candidates which have a greater effect on likelihood calculations; reverting the selected pseudo-transmission signal point candidates to original transmission signal point candidates and calculating final likelihoods; and restoring the received signal on the basis of the calculated likelihoods. | 05-09-2013 |
20130122692 | Semiconductor Device Manufacturing Method and Substrate Manufacturing Method - Provided is a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate manufacturing method. The substrate processing apparatus comprises: a reaction chamber configured to process substrates; a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine; a first gas supply unit connected to the first gas supply system; a second gas supply system configured to supply at least a reducing gas; a second gas supply unit connected to the second gas supply system; a third gas supply system configured to supply at least a carbon-containing gas and connected to at least one of the first gas supply unit and the second gas supply unit; and a control unit configured to control the first to third gas supply systems. | 05-16-2013 |
20130122720 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A high-k capacitor insulating film stable at a higher temperature is formed. There is provided a method of manufacturing a semiconductor device. The method comprises: forming a first amorphous insulating film comprising a first element on a substrate; adding a second element different from the first element to the first amorphous insulating film so as to form a second amorphous insulating film on the substrate; and annealing the second amorphous insulating film at a predetermined annealing temperature so as to form a third insulating film by changing a phase of the second amorphous insulating film. The concentration of the second element added to the first amorphous insulating film is controlled according to the annealing temperature. | 05-16-2013 |
20130123971 | Substrate Processing Apparatus and Display Method for Substrate Processing Apparatus - During a carrying operation, the position, transportation origin, and transportation destination of a carrier or a boat can be easily checked. A carrying system is configured to carry a substrate, a manipulation unit is configured to display an operation state of the carrying system on a manipulation screen, and a control unit is configured to control an operation of the carrying system. The manipulation unit displays a carrying system icon indicating the carrying system which is a carrying target object and a carrying-out icon at predetermined positions of the manipulation screen corresponding to a transportation origin of the carrying system, and a carrying-in icon at a predetermined position of the manipulation screen corresponding to the transportation destination of the carrying system. | 05-16-2013 |
20130133696 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube. | 05-30-2013 |
20130137272 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device, includes supplying a first etching gas and a second etching gas having a decomposition rate lower than that of the first etching gas from one end of a substrate accommodating region in a process chamber where a plurality of substrates are stacked while exhausting an inside of a process chamber from other end of the substrate accommodating region; and etching a first portion of the plurality of substrate at the one end of the substrate accommodating region using a portion of radicals generated from the first etching gas and second etching gas, and etching a second portion of the plurality of substrates at the other end of the substrate accommodating region using at least a portion of a remaining radicals of the radicals generated from the first etching gas and second etching gas. | 05-30-2013 |
20130137274 | SUBSTRATE PROCESSING METHOD - There is provided a substrate processing method to suppress popping while increasing the throughput in a photoresist removing process. The substrate processing method comprises: loading a substrate, which is coated with photoresist into which a dopant is introduced, into a process chamber; heating the substrate; supplying a reaction gas to the process chamber, wherein the reaction gas contains at least oxygen and hydrogen components, and concentration of the hydrogen component ranges from 60% to 70%; and processing the substrate in a state where the reaction gas is excited into plasma. In the heating of the substrate, the substrate may be heated to 220° C. to 300° C. In the heating of the substrate, the substrate may be heated to 250° C. to 300° C. | 05-30-2013 |
20130137279 | Exhaust Unit, Substrate Processing Apparatus, and Method of Manufacturing Semiconductor Device - Provided is a substrate processing apparatus capable of increasing a conductance of an exhaust system while preventing or suppressing an increase in footprint of an apparatus, thereby reducing a pressure thereof. The substrate processing apparatus includes a process container ( | 05-30-2013 |
20130149846 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times. | 06-13-2013 |
20130149872 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - There is provided a method of manufacturing a semiconductor device, including: forming a film containing a specific element, nitrogen, and carbon on a substrate, by alternately performing the following steps a specific number of times: a step of supplying a source gas containing the specific element and a halogen element, to the substrate; and a step of supplying a reactive gas composed of three elements of carbon, nitrogen, and hydrogen and having more number of a carbon atom than the number of a nitrogen atom in a composition formula thereof, to the substrate. | 06-13-2013 |
20130149873 | Method of Manufacturing Semiconductor Device, Method of Processing Substrate, Substrate Processing Apparatus and Non-Transitory Computer-Readable Recording Medium - A thin film including characteristics of low permittivity, high etching resistance and high leak resistance is to be formed. A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a first layer containing the predetermined element, nitrogen and carbon by alternately performing supplying a source gas containing the predetermined element and a halogen element to the substrate and supplying a first reactive gas containing three elements including the carbon, the nitrogen and hydrogen and having a composition wherein a number of carbon atoms is greater than that of nitrogen atoms to the substrate a predetermined number of times; and forming a second layer by supplying a second reactive gas different from the source gas and the first reactive gas to the substrate to modify the first layer. | 06-13-2013 |
20130149874 | Method of Manufacturing Semiconductor Device, Method of Processing Substrate, Substrate Processing Apparatus and Non-Transitory Computer-Readable Recording Medium - A method of manufacturing a semiconductor device is provided. The method includes: forming a thin film containing a predetermined element on a substrate by repeating a cycle, the cycle including: forming a first layer containing the predetermined element, nitrogen and carbon by alternately performing supplying a source gas containing the predetermined element and a halogen element to the substrate and supplying a first reactive gas containing three elements including the carbon, the nitrogen and hydrogen and having a composition wherein a number of carbon atoms is greater than that of nitrogen atoms to the substrate a predetermined number of times; forming a second layer by supplying a second reactive gas different from the source gas and the first reactive gas to the substrate to modify the first layer; and modifying a surface of the second layer by supplying a hydrogen-containing gas to the substrate. | 06-13-2013 |
20130164943 | Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device - The substrate processing apparatus includes a reaction chamber configured to accommodate a substrate; a first gas supply unit configured to supply a first process gas containing a silicon element to the substrate; a second gas supply unit configured to supply a second process gas containing a silicon element and a chlorine element to the substrate; an exhaust unit configured to exhaust the first process gas and the second process gas; a cleaning gas bypass supply unit configured to supply a cleaning gas to the exhaust unit; a cleaning monitoring unit installed in the exhaust unit; a gas flow rate control unit configured to adjust an amount of the cleaning gas supplied; and a main control unit configured to control the gas flow rate control unit in response to a signal received from the cleaning gas monitoring unit. | 06-27-2013 |
20130171838 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - Provided is a method of manufacturing a semiconductor device capable of forming a nitride layer having high resistance to hydrogen fluoride at low temperatures. The method includes forming a nitride film on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a source gas to the substrate, supplying a plasma-excited hydrogen-containing gas to the substrate, supplying a plasma-excited or thermally excited nitriding gas to the substrate, and supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate. | 07-04-2013 |
20130178954 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM, AND SUBSTRATE TRANSFER METHOD - To provide a substrate processing apparatus, including a control unit that performs control to transfer a prescribed substrate into each chamber, wherein when error is detected during transfer of the substrate, the control unit performs control to: specify a place where the error is generated; select a fallback operation table according to a processing status of the substrate, which is the table defining a processing content for each part of the substrate processing apparatus including the place where the error is generated; and transfer the substrate based on the selected fallback operation table. | 07-11-2013 |
20130182660 | WIRELESS COMMUNICATION SYSTEM AND RECEIVING DEVICE - In a wireless communication system for performing wireless communication using a white space, a receiving station includes an interference suppression processing part which performs processing to reduce interference which is received by the signal transmitted from a transmitting station at a frequency of the white space, a receiving quality estimation part which estimates communication quality of the communication using the frequency of the white space based on the signal processed by the interference suppression processing part, and a receiving quality informing part which transmits to the transmitting station the communication quality information estimated by the receiving quality estimation part. | 07-18-2013 |
20130183989 | MULTICHANNEL WIRELESS COMMUNICATION SYSTEM, BASE STATION, AND CHANNEL USING METHOD - A base station judges whether backup channel of the base station has therein a channel which is not an operating channel of another base station configuring an adjacent cell by the channel management unit, and, if there is at least one channel which is not an operating channel of the another base station, performs fairness processing according to a prescribed etiquette to have one of the channels as an operating channel of the base station, and, if not, determines a base station which requests a release of an operating channel from the another based on the basis of a degree of satisfaction defined as a function of an offered communication traffic within a cell, a transmission rate depending on a propagation environment between the base station and a wireless communication terminal and an actually allocated operating channel number, and performs negotiation processing to cause a release of an operating channel. | 07-18-2013 |
20130194957 | RADIO BASE STATION AND CONTROL METHOD THEREOF - To provide a radio base station and a control method thereof wherein a simple way is used to relax the load concentration of a power control and also relax the control delay. A radio base station and a control method thereof wherein a frame generating part inserts a dummy TPC command, and a power setting part sets a TPC command, whereby a process of deciding the TPC command to be inserted can be delayed by the time required for the processes done in the frame generating part, a modulating part and a spreading part and wherein the process of deciding the TPC command and a process of deciding a power value are separated from and done at different timings from a process of controlling a TPC command insertion status and a process of controlling a power setting status, with the result that even when the processes are concentrated, a load dispersion can be done. | 08-01-2013 |