Patent application number | Description | Published |
20130026363 | CHARGED PARTICLE RADIATION DEVICE - The present invention provides a scanning charged particle beam device including a sample chamber ( | 01-31-2013 |
20130033705 | INSPECTION DEVICE AND INSPECTION METHOD - An inspection device for inspecting defects of an inspection object including a light source for irradiating a luminous flux to the inspection object; an optical system for guiding reflected light from the inspection object; a photoelectric image sensor having a plurality of photoelectric cells arranged, for converting the light guided to detection signals; a detection signal transfer unit having channels each constituted by a signal correction unit, a converter and an image formation unit, and corresponding to each of a plurality of regions formed by dividing the photoelectric image sensor, respectively; and an image synthesis unit for forming an image of the surface of the object by synthesizing partial images outputted; the inspection device inspecting defects of the object by processing the synthesized image; whereby it becomes possible to correct a detection signal from said photoelectric cell close to a predetermined reference target value. | 02-07-2013 |
20130075036 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a plasma-generation high-frequency power supply which generates plasma in a processing chamber, a biasing high-frequency power supply which applies high-frequency bias electric power to an electrode on which a sample is placed, a monitor which monitors a peak-to-peak value of the high-frequency bias electric power applied to the electrode, an electrostatic chuck power supply which makes the electrode electrostatically attract the sample, a self-bias voltage calculating unit which calculates self-bias voltage of the sample by monitoring the peak-to-peak value of the high-frequency bias electric power applied to the electrode, and an output voltage control unit which controls output voltage of the electrostatic chuck power supply based on the calculated self-bias voltage. | 03-28-2013 |
20130075603 | SAMPLE PRETREATMENT APPARATUS AND MASS SPECTROMETER PROVIDED WITH THE SAME - The present invention relates to a pretreatment apparatus that performs concentration and separation of a sample, and in particular, in order to provide a sample pretreatment apparatus using a solid-phase extraction column, and a mass spectrometer using the same, which is particularly suitable for clinical analysis in which qualitative/quantitative analysis of a biological sample such as blood is performed, according to each operational step for a solid-phase extraction treatment, for example, a collection device serving as flow passages or containers for collection of waste liquid or extracted matter is installed on a bottom face of the solid-phase extraction column, and the extracted matter is separately collected without being mixed with waste liquid by switching the positions of the collection device. | 03-28-2013 |
20130087704 | GAS FIELD IONIZATION ION SOURCE, SCANNING CHARGED PARTICLE MICROSCOPE, OPTICAL AXIS ADJUSTMENT METHOD AND SPECIMEN OBSERVATION METHOD - A gas field ionization ion source (GFIS) is characterized in that the aperture diameter of the extraction electrode can be set to any of at least two different values or the distance from the apex of the emitter to the extraction electrode can be set to any of at least two different values. In addition, solid nitrogen is used for cooling. It may be possible to not only let divergently emitted ions go through the aperture of the extraction electrode but also, in behalf of differential pumping, reduce the diameter of the aperture. In addition, it may be possible to reduce the physical vibration of the cooling means. Consequently, it may be possible to provide a highly stable GFIS and a scanning charged particle microscope equipped with such a GFIS. | 04-11-2013 |
20130097739 | Cantilever of Scanning Probe Microscope and Method for Manufacturing the Same, Method for Inspecting Thermal Assist Type Magnetic Head Device and its Apparatus - To detect both of near-field light and magnetic field generated by a thermal assist type magnetic head and to perform inspection of the head, a cantilever of a scanning probe microscope has a lever in which a probe is formed, a thin magnetic film formed on a surface of the probe, and fine particles or thin film of noble metal or an alloy including noble metal formed on a surface of the magnetic film. An inspection apparatus has the cantilever, a displacement detection unit to detect vibration of the cantilever, a near-field light detection unit to detect scattered light caused by near-field light generated from a near-field light emitter and enhanced on the surface of the probe of the cantilever, and a processing unit to process signals obtained by detection with the displacement detection unit and the near-field light detection unit. | 04-18-2013 |
20130100441 | OPTICAL INSPECTION APPARATUS AND EDGE INSPECTION DEVICE - The invention provides an optical inspection apparatus having an edge inspection device capable of accommodating wide positional changes in the edges of wafers. | 04-25-2013 |
20130112872 | INSPECTION METHOD FOR SEMICONDUCTOR WAFER AND APPARATUS FOR REVIEWING DEFECTS - An object of the present invention is to provide a suitable method of observing a wafer edge by using an electron microscope. The electron microscope includes a column which can take an image in being tilted, and thus allows a wafer edge to be observed from an oblique direction. | 05-09-2013 |
20130117723 | PATTERN SHAPE EVALUATION METHOD, PATTERN SHAPE EVALUATION DEVICE, PATTERN SHAPE EVALUATING DATA GENERATION DEVICE AND SEMICONDUCTOR SHAPE EVALUATION SYSTEM USING THE SAME - A pattern shape evaluation method and semiconductor inspection system having a unit for extracting contour data of a pattern from an image obtained by photographing a semiconductor pattern, a unit for generating pattern direction data from design data of the semiconductor pattern, and a unit for detecting a defect of a pattern, through comparison between pattern direction data obtained from the contour data and pattern direction data generated from the design data corresponding to a pattern position of the contour data. | 05-09-2013 |
20130121883 | CHEMICAL ANALYZER - An automatic chemical analyzer in which a reaction solution is stirred by air ejected from an air ejection hole placed above a reaction container. The reaction region can be washed and cleaned sufficiently without causing damage, such as exfoliation of a coating reagent. A reaction container disk is provided with a pore and a pressure detector connected with the pore. Before and after the stirring operation, the ejection hole (nozzle) ejecting air is moved and the output value of the pressure detector is compared with a previously measured normal value. With a discharge pipe and a suction pipe inserted to the opening of the reaction container to be close to both ends of the opening and the side wall of the container, the reaction region at the bottom of the container is washed by continuous discharge and suction of cleaning fluid. | 05-16-2013 |
20130133444 | HEAD ELEMENT INSPECTION APPARATUS - There is provided a head element inspection apparatus that can adjust the position of a cantilever for a short time without using any adjusting jig in the case of replacing a cantilever. A head element inspection apparatus includes a cantilever holder that holds a cantilever, a holder base on which the cantilever holder is mounted, a Z-direction drive shaft that drives the holder base in the Z-direction, and a workpiece table that holds a head element and drives the head element in X- and Y-directions. The cantilever holder and the holder base include adjusting mechanisms (an adjusting screw and an off-center pin) that adjust the position of the cantilever in the X-direction and the Y-direction. | 05-30-2013 |
20130134308 | SAMPLE OBSERVATION APPARATUS AND METHOD OF MARKING - If an indentation mark is put in the vicinity of a defect under constant conditions regardless of the film type of samples, surroundings of the mark become cracked or the mark may be too small to view, thus causing the problem of difficulty in viewing the mark or the defect. Another problem is that in a patterned wafer, an indentation mark is coincidentally put on a film not suited for marking. To solve such problems, an elemental analysis is conducted of a position to be marked and, on the basis of the analysis results, such indentation marking conditions as the pressing load, descending rate, and marking depth of an indenter are varied to perform marking suited for a film type. If the film type of the location to be marked cannot be concluded to be a registered film type, marking under wrong conditions is prevented by switching to manual setting. It is also possible to avoid putting marks on a material if the material is not suited for marking. | 05-30-2013 |
20130135769 | MAGNETIC HEAD INSPECTION APPARATUS AND MAGNETIC HEAD INSPECTION METHOD - In inspection for a magnetic head having a built-in fine-motion actuator, stable servo control is realized without an effect of thermal drift or thermal expansion. A magnetic head inspection apparatus includes a fine-motion stage, a data process circuit, and a servo control circuit. The fine-motion stage performs positioning of a magnetic head in a predetermined position on a magnetic disk. The data process circuit measures the movement characteristic of the fine-motion actuator. The servo control circuit controls the magnetic head to track the servo track on the magnetic disk based on a measurement result of the data process circuit. The servo control circuit drives the fine-motion stage, and controls the magnetic head to move in a manner that the value of movement of the fine-motion actuator remains within an acceptable range. | 05-30-2013 |
20130136335 | PATTERN GENERATING APPARATUS AND PATTERN SHAPE EVALUATING APPARATUS - Although there has been a method for evaluating pattern shapes of electronic devices by using, as a reference pattern, design data or a non-defective pattern, the conventional method has a problem that the pattern shape cannot be evaluated with high accuracy because of the difficulty in defining an exact shape suitable for the manufacturing conditions of the electronic devices. The present invention provides a shape evaluation method for circuit patterns of electronic devices, the method including a means for generating contour distribution data of at least two circuit patterns from contour data sets on the circuit patterns; a means for generating a reference pattern used for the pattern shape evaluation, from the contour distribution data; and a means for evaluating the pattern shape by comparing each evaluation target pattern with the reference pattern. | 05-30-2013 |
20130156878 | MICROSTRUCTURE TRANSCRIPTION APPARATUS - A microstructure transcription apparatus for transcribing microscopic concave-convex patterns on a body to be transcribed includes a stamper, on a surface of which is formed microscopic concave-convex pattern; and a stamper holder portion, which holds the stamper. The stamper holder portion includes a transparent backup member, a stamper backup elastic body attached on the backup portion covering over a central portion thereof, a space, into which a negative pressure is introduced for absorbing said stamper to hold, and a member, which is formed surrounding said stamper holder portion therein and contacts on an outer peripheral portion of said stamper. The contact member is movable with respect to the backup member, and thereby a curvature of a curved surface of said stamper to be suppressed onto said stamper backup elastic body is changeable, enabling to alter a curvature of a spherical shape on the surface of the stamper when transcribing. | 06-20-2013 |
20130157470 | PLASMA ETCHING METHOD - A plasma etching method that can improve an etching selection ratio of a film to be etched to a film different from the film to be etched compared with the related art is provided. The present invention provides a plasma etching method for selectively etching a film to be etched against a film different from the film to be etched, in which plasma etching of the film to be etched is performed using a gas that can cause to generate a deposited film containing similar components as components of the different film. | 06-20-2013 |
20130161507 | MASS SPECTROMETER AND MASS SPECTROMETRY - A mass spectrometer featured in including an ion source including a first electrode, a second electrode, and a dielectric unit having a sample introducing unit and a sample discharging unit and provided between the first electrode and the second electrode, a power source of ionizing a sample by a discharge generated between the first electrode and the second electrode by applying an alternating current voltage to either one of the first electrode and the second electrode, a mass spectrometry unit of analyzing an ion discharged from the sample discharging unit, and a light irradiating unit of irradiating an area of generating the discharge with light. | 06-27-2013 |
20130167665 | SAMPLE OBSERVATION APPARATUS - Test pieces necessary to conduct a failure analysis of defects discovered with a defect review apparatus are produced with high quality, with excellent reproducibility, in a short period of time, and at low costs. An impression marking apparatus which can be driven in a direction perpendicular to a surface of a semiconductor wafer and is equipped with an impression needle fixed on the leading end of the mechanism is attached to a wafer defect review apparatus. A position to which impression marking is applied is determined on the basis of coordinate information on a defect previously acquired with the wafer defect review apparatus. In addition, the feed rate of the impression marking mechanism in the vertical direction thereof is determined on the basis of height information acquired with a height detection sensor for detecting the height of a wafer surface provided in the wafer defect review apparatus. | 07-04-2013 |
20130174105 | METHOD AND APPARATUS FOR PLASMA PROCESSING - A plasma processing apparatus is disclosed for minimizing the non-uniformity of potential distribution around wafer circumference. The apparatus includes a focus ring formed of a dielectric, and a conductor or a semiconductor having RF applied thereto. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material, and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. | 07-04-2013 |
20130182100 | DEFECT INSPECTION SYSTEM - A defect inspection system can suppress an effect of light from a rough surface or a circuit pattern and increasing a gain of light from a defect to detect the defect with high sensitivity. When a lens with a large NA value is used, the diameter is 10 | 07-18-2013 |
20130193322 | PHASE PLATE - A phase plate for a charged particle beam system, such as a transmission electron microscope (TEM), is described. The phase plate comprises a support having a through-hole and an elongate member which is magnetisable in a direction along its length and which extends partially across the through-hole and which is narrower than the through-hole. | 08-01-2013 |
20130200256 | Mass Spectroscope and its Adjusting Method - In order to enable the mass spectroscope to reduce the operation load of the adjustment of the amplitude difference, and to reduce the increase in power consumption caused by the difference between the resonance frequency and the drive frequency, the resonance circuit unit of the ion trap section is configured to control the amplitude difference adjustment section of the resonance circuit unit to adjust that the amplitude difference between the high-voltage RF signals decreases, and controls the frequency synchronizing section of the resonance circuit unit to adjust that the resonance frequency of the resonance circuit is aligned with the drive frequency of the RF signal source, on the basis of the information about the amplitude difference between the high-voltage RF signals and the resonance frequency of the resonance circuit unit, which have been measured by a resonance frequency/amplitude difference measuring unit. | 08-08-2013 |
20130202188 | DEFECT INSPECTION METHOD, DEFECT INSPECTION APPARATUS, PROGRAM PRODUCT AND OUTPUT UNIT - A defect inspection method has the following steps. An irradiation step of irradiating illumination light on an object. A detection step of detecting scattered light from the object. A defect detection step having the following steps. A first pixel-value information acquisition step of dividing an image based on the scattered light into multiple areas and obtaining first pixel value information, information of the pixel value about each of the multiple areas. A second pixel-value information acquisition step of acquiring second pixel value information, information of the pixel value about all the areas by processing the first pixel value information obtained. A similarity calculation step of calculating the similarity between each image of the multiple areas and the image of all the areas by comparing the first and the second pixel value information. A defect extraction step of extracting a defect of the object using the calculated similarity. | 08-08-2013 |
20130202189 | DEFECT CLASSIFICATION METHOD AND APPARATUS, AND DEFECT INSPECTION APPARATUS - A defect classification method to classify defects by using a classifier having a binary tree structure based on features of defects extracted from detected signals acquired from a defect inspection apparatus includes a classifier construction process for constructing the classifier by setting a branch condition including defect classes respectively belonging to groups located on both sides of the branch point, a feature to be used for branching, and a discriminant reference, for each branch point in the structure based on instruction of defect classes and feature data respectively associated therewith beforehand. The process includes a priority order specification process for previously specifying target classification performance of purity and accuracy for each defect class, whole and in worst case, with priority order, and an evaluation process for evaluating whether the specified target classification performance under the branching condition is satisfied and displaying a result of evaluation, every item. | 08-08-2013 |