Patent application number | Description | Published |
20130189830 | Methods of Forming Semiconductor Devices - In accordance with an embodiment of the present invention, a method of fabricating a semiconductor device includes forming a trench from a top surface of a substrate having a device region. The device region is adjacent to the top surface than an opposite bottom surface. The trench surrounds the sidewalls of the device region. The trench is filled with an adhesive. An adhesive layer is formed over the top surface of the substrate. A carrier is attached with the adhesive layer. The substrate is thinned from the bottom surface to expose at least a portion of the adhesive and a back surface of the device region. The adhesive layer is removed and adhesive is etched to expose a sidewall of the device region. | 07-25-2013 |
20130273326 | PROCESSING A SACRIFICIAL MATERIAL DURING MANUFACTURE OF A MICROFABRICATED PRODUCT - A method for processing a sacrificial material of an intermediate microfabricated product includes forming a hydrogen-containing carbon layer on a surface of a base structure and releasing hydrogen from the hydrogen-containing carbon layer to obtain a hydrogen-released (i.e., densified) carbon layer with low shrink. The method further includes forming a structural layer on at least a portion of a surface of the hydrogen-released carbon layer, and oxidizing the hydrogen-released (densified) carbon layer to release the structural layer. In this manner, a cavity is formed between the base structure and the structural layer. The ashing of the hydrogen-released carbon layer leaves substantially no residues within the cavity of the intermediate or final microfabricated product. Further embodiments provide a method for manufacturing a microfabricated product, to an intermediate microfabricated product, and to a microfabrication equipment. | 10-17-2013 |
20140061873 | METHOD FOR PROCESSING A WAFER, AND LAYER ARRANGEMENT - A method for processing a wafer in accordance with various embodiments may include: forming a passivation over the wafer; forming a protection layer over at least a surface of the passivation facing away from the wafer, wherein the protection layer includes a material that is selectively etchable to a material of the passivation; forming a mask layer over at least a surface of the protection layer facing away from the wafer, wherein the mask layer includes a material that is selectively etchable to the material of the protection layer; etching the wafer using the mask layer as a mask; selectively etching the material of the mask layer to remove the mask layer from the protection layer, after etching the wafer; and selectively etching the material of the protection layer to remove the protection layer from the passivation, after selectively etching the material of the mask layer. | 03-06-2014 |
20140106229 | BATTERY ELECTRODE, BATTERY, AND METHOD FOR MANUFACTURING A BATTERY ELECTRODE - A battery electrode in accordance with various embodiments may include: a substrate including a surface configured to face an ion-carrying electrolyte; and a first diffusivity changing region at a first portion of the surface, wherein the first diffusivity changing region is configured to change diffusion of ions carried by the electrolyte into the substrate, and wherein a second portion of the surface is free from the first diffusivity changing region. | 04-17-2014 |
20140145345 | METHOD OF FORMING A SEMICONDUCTOR STRUCTURE, AND A SEMICONDUCTOR STRUCTURE - A method of forming a semiconductor structure in accordance with various embodiments may include: forming at least one opening in a workpiece; forming a first conductive layer within the at least one opening, the first conductive layer not completely filling the at least one opening; forming a fill layer over the first conductive layer within the at least one opening; and forming a second conductive layer over the fill layer. | 05-29-2014 |
20140265098 | Lift Pin for Substrate Processing - Lift pins and devices having lift pins are provided. According to an aspect, a lift pin may have a tapered distal portion. According to another aspect, a lift pin may have two portions threadedly engaged with each other. According to yet another aspect, a lift pin may be mounted to a lifting plate with slackness. | 09-18-2014 |
20140335700 | Carbon Layers for High Temperature Processes - Carbon layers with reduced hydrogen content may be deposited by plasma-enhanced chemical vapor deposition by selecting processing parameters accordingly. Such carbon layers may be subjected to high temperature processing without showing excessive shrinking. | 11-13-2014 |
20140354714 | Display Device - A display device is provided. The display device comprises a display comprising a plurality of pixels arranged in a display plane. The display device is configured to determine a virtual plane at which a long-sighted user of the display device who is looking at the display sees sharp. Further, the display device is configured to determine a first contiguous group of pixels of the display which are located within a first optical path from a first virtual pixel of the virtual plane to an eye of the long-sighted user, and to determine a second contiguous group of pixels of the display which are located within a second optical path from a second virtual pixel of the virtual plane to the eye of the long-sighted user. | 12-04-2014 |