Patent application number | Description | Published |
20090006961 | INFORMATION PROCESSING APPARATUS AND VIDEO AND AUDIO INFORMATION PROTECTING METHOD - According to one embodiment, an information processing apparatus which conducts display of video and output of audio from video and audio information including video data and audio data, includes a processor which can execute various softwares, a memory which stores data therein, and a decoder which is configured from a software configured from a plurality of modules and executed by the processor in order to perform a processing for conducting display of video and output of audio, where the decoder causes the processor to perform a processing for partially encrypting data transferred between the modules via the memory and a processing for decoding the data transferred between the modules via the memory. | 01-01-2009 |
20090037432 | INFORMATION COMMUNICATION SYSTEM AND DATA SHARING METHOD - According to one embodiment, a data sharing method for an information communication system in which a plurality of nodes that belong to a self group are connected to a network, the method includes sending, via the network, a node confirmation request to remaining nodes to confirm availabilities of the remaining nodes that belong to the self group, receiving node confirmation response messages including information indicating the availabilities from the remaining nodes, setting parameters N and M in accordance with contents of the node confirmation response messages, dividing shared data into N divided data, and M-fold distributing and storing the divided data of the shared data in N nodes, selectively collecting N divided data from not less than (N−M+1) nodes, and restoring the shared data by combining the collected N divided data. | 02-05-2009 |
20090265708 | Information Processing Apparatus and Method of Controlling Information Processing Apparatus - According to one embodiment, an information processing apparatus in which virtual machine run under a hypervisor, includes a device manager configured to create a device model including information that is used when assigning an I/O device to the virtual machine in accordance with a device profile and an arrangement of I/O devices, and an address conversion circuit configured to perform address conversion for the virtual machine to make an MMIO access to the assigned I/O device and to perform address conversion to conduct a DMA transfer between the assigned I/O device and the virtual machine, wherein the hypervisor assigns the I/O device to the virtual machine based on the device model, and the virtual machine utilizes, when making the MMIO access to the assigned I/O device or conducting the DMA transfer with the assigned I/O device, the address conversion circuit to make the access or conducts the DMA transfer. | 10-22-2009 |
20090271785 | INFORMATION PROCESSING APPARATUS AND CONTROL METHOD - According to one embodiment, an information processing apparatus capable of controlling a plurality of operating systems, includes an activation module which activates an activation program, a management module which manages the plurality of operating systems to be activated by the activation module, a storage module which stores a main operating system that runs on the management module and a guest operating system that runs on the management module via a virtual activation program, and a notification module which, if a monitoring program that runs on the main operating system activated determines that a configuration of the information processing apparatus has changed, causes a notification program running on the main operating system to notify the guest operating system activated from the storage module via the virtual activation program of change information of the configuration of the information processing apparatus. | 10-29-2009 |
20090287848 | INFORMATION PROCESSING DEVICE AND COMMUNICATION CONTROL METHOD - According to one embodiment, the host virtual machine includes a virtual bridge connection module configure to virtually connect one guest virtual machine and the network by bridge connection, a conversion modules configure to convert packets transmitted from the another guest virtual machines and the application to packets of a virtual private network (VPN) protocol, and a packet allocation module configure to detect a destination of the packets received from the network, to allocate the received packets to the virtual bridge connection module in a case where the detected destination is the one guest virtual machine, and to convert the packets of the VPN protocol received from the network to original packets and to allocate the converted packets to the detected destination in a case where the detected destination is any of the N−1 guest virtual machines and the application that runs on the host virtual machine. | 11-19-2009 |
20090328038 | Computer System and Device Controlling Method for Computer System - According to one embodiment, a computer system configured such that a virtual machine including a guest operating system running on a source computer connected to a network migrates to a destination computer connected to the network, where the virtual machine then running on the destination computer wherein, the source computer comprises first hardware, a first backend driver running in a first hypervisor running on the first hardware, and configured to directly control the device in association with communication performed via a first interface, the virtual machine comprises a frontend driver configured to run in the guest operating system, and to control the device, the destination computer comprises second hardware, the second hypervisor running on the second hardware, and to manage the virtual machine, and a second backend driver configured to run in the second hypervisor and including a second interface which is the same as the first interface. | 12-31-2009 |
20100275205 | COMPUTER MACHINE AND ACCESS CONTROL METHOD - According to one embodiment, a computer machine includes a client virtual machine and a file server virtual machine configured to simultaneously run, a virtual machine manager configured to control booting of the client and file server virtual machines, a monitoring module configured to monitor whether a communication with an external file server is possible, an access control module configured to access to a duplicate file which is a duplicate of the file and is stored in a part of a local disk or a part of a memory which are managed by the monitoring module when the monitoring module determines that the communication is impossible after determining that the communication is possible, and a file deletion module configured to delete the duplicate file when the monitoring module detects the communication is impossible in a preset time. | 10-28-2010 |
20120005676 | Computing Machine and Method of Updating Virtual Machine - According to one embodiment, a computing machine for executing a virtual machine, includes a restriction module. The restriction module is configured to restrict, in an update mode in which an operating system and/or an application program in the virtual machine are updated, an I/O device recognized by the virtual machine to a first I/O device which is necessary for executing the operating system and/or the application program. | 01-05-2012 |
20130007736 | INFORMATION PROCESSING APPARATUS, METHOD OF PROCESSING INFORMATION AND STORAGE MEDIUM - According to one embodiment, an information processing apparatus includes a virtualization engine which constructs a virtual machine. The virtualization engine includes a virtual disk file generation module and a data transmission module. The virtual disk file generation module generates a virtual disk file for a virtual disk to be constructed on the virtual machine. The virtual disk file has a data structure in which difference data is stored as a layer in time series. The data transmission module executes data transmission in order from difference data in an upper layer which is new in time series, when taking synchronization of the user data in the virtual disk file between a file server and the virtual machine. | 01-03-2013 |
20130174150 | INFORMATION PROCESSING APPARATUS AND COMMUNICATION CONTROL METHOD - According to one embodiment, an apparatus is configured to carry out a 1st virtual machine and a 2nd virtual machine. The 1st virtual machine includes a notifying module configured to notify a 1st port number to the 2nd virtual machine, and a 1st transmitter configured to transmit, to a network, a 1st packet including a source port number indicating port number other than the 1st port number. The 2nd virtual machine includes a 2nd transmitter configured to transmit, to the network, a 2nd packet including a source port number indicating the 1st port number. The apparatus includes a sorting module configured to sort a received packet to the 1st virtual machine or the 2nd virtual machine. | 07-04-2013 |
20130174151 | INFORMATION PROCESSING APPARATUS AND METHOD OF CONTROLLING VIRTUAL MACHINE - According to one embodiment, an apparatus includes a controller. The controller is configured to control an operation environment of a virtual machine which runs on a hypervisor. The controller includes a change module configured to change the virtual machine from an operating state to a sleep state, in response to a logout request for an operating system in the virtual machine, a storing module configured to store first image data indicating contents of a memory in a storage as an operation environment, a restoration module configured to restore the contents of the memory to contents based on second image data, and a return module configured to return the virtual machine to the operating state after the contents of the memory is restored to the contents based on the second image data. | 07-04-2013 |
20130238675 | INFORMATION PROCESSING APPARATUS, IMAGE FILE MANAGEMENT METHOD AND STORAGE MEDIUM - According to one embodiment, an information processing apparatus applied to a client management system managing desktop environments of client terminals comprises a first controller and a second controller. The first controller controls creation processing for first image files which are disk image files for the desktop environments and contain no information unique to the client terminals and difference files for formation of second image files respectively containing information unique to the client terminals based on the first image files. The second controller controls deletion processing for the difference file for which the second image file is completely acquired by a corresponding client terminal. | 09-12-2013 |
Patent application number | Description | Published |
20080247434 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device capable of increasing the carrier concentration of a p-type cladding layer and improving light-emitting efficiency is provided. A semiconductor light-emitting device is made of a Group II-VI compound semiconductor, and the semiconductor light-emitting device includes an active layer between an n-type cladding layer and a p-type cladding layer, in which the active layer has a Type II superlattice structure, and the junctions between the active layer and the n-type cladding layer and between the active layer and the p-type cladding layer each have a Type I structure, and the p-type cladding layer includes tellurium (Te) as a Group VI element. | 10-09-2008 |
20080254500 | Microorganism-collecting chip, microorganism-collecting kit, method of quantifying microorganisms, specimen for confirming normal state of microorganism-quantifying apparatus and microorganism-quantifying apparatus - The invention aims to efficiently collect microorganisms from a test sample and accurately detect and quantify the collected microorganisms. | 10-16-2008 |
20090059985 | EL SEMICONDUCTOR DEVICE - An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppress the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity. | 03-05-2009 |
20100040103 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device including: a semiconductor layer including an n-type first cladding layer, an n-type second cladding layer, an active layer, a p-type first cladding layer, and a p-type second cladding layer in this order on an InP substrate. The n-type first cladding layer and the n-type second cladding layer satisfy formulas (1) to (4) below, or the p-type first cladding layer and the p-type second cladding layer satisfy formulas (5) to (8) below. | 02-18-2010 |
20120269222 | NITRIDE SEMICONDUCTOR LASER AND EPITAXIAL SUBSTRATE - A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer. | 10-25-2012 |
20120327967 | GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE, EPITAXIAL SUBSTRATE, METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE - A nitride semiconductor laser device includes a p-type cladding layer, an active layer and an n-type cladding layer. The p-type cladding layer and the n-type cladding layer comprise indium and aluminum as group-III constituent. The n-type cladding layer, active layer and p-type cladding layer are arranged along the normal of a semi-polar semiconductor surface of a substrate. This surface tilts toward the m-axis of the hexagonal nitride by an angle of 63 degrees or more and smaller than 80 degrees from a plane orthogonal to a reference axis extending along the c-axis thereof. The active layer generates light having a peak wavelength in the range of 480 to 600 nm. The refractive indices of the n-type cladding layer and p-type cladding layer are smaller than that of GaN. The n-type cladding layer has a thickness of 2 μm or more while the p-type cladding layer has a thickness of 500 nm or more. | 12-27-2012 |
20130003769 | GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER DEVICE - A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer 23. | 01-03-2013 |
20130009202 | GROUP III NITRIDE SEMICONDUCTOR DEVICE, METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE - A group-III nitride semiconductor device includes a light emitting layer emitting light of a wavelength in the range of 480 to 600 nm; a first contact layer over the light emitting layer; a second contact layer in direct contact with the first contact layer; and a metal electrode in direct contact with the second contact layer. The first and second contact layers comprise a p-type gallium nitride-based semiconductor. The p-type dopant concentration of the first contact layer is lower than that of the second contact layer. The light emitting layer comprises a gallium nitride-based semiconductor. The interface between the first and second contact layers tilts at an angle of not less than 50 degrees and smaller than 130 degrees from a plane orthogonal to a reference axis extending along the c-axis. The second contact layer has a thickness within the range of 1 to 50 nm. | 01-10-2013 |
20130142210 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light-emitting device has a semiconductor ridge, and includes a first inner-layer between an active layer and an n-type cladding and a second inner-semiconductor layer between the active layer and a p-type cladding. The first inner-layer, active layer and second inner-layer constitute a core-region. The n-type cladding, core-region and p-type cladding constitute a waveguide-structure. The active layer and the first inner-layer constitute a first heterojunction inclined at an angle greater than zero with respect to a reference plane of the c-plane of the nitride semiconductor of the n-type cladding. Piezoelectric polarization of the well layer is oriented in a direction from the p-type cladding toward the n-type cladding. The second inner-layer and InGaN well layer constitute a second heterojunction. A distance between the ridge bottom and the second heterojunction is 200 nm or less. The ridge includes a third heterojunction between the second inner-layer and the p-type cladding. | 06-06-2013 |
20130156060 | LASER DIODE DEVICE AND METHOD OF MANUFACTURING LASER DIODE DEVICE - A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer including a light emitting layer, the epitaxial layer being formed on the semi-polar surface of the semiconductor substrate, and the epitaxial layer including a ridge section; a first electrode formed on a top surface of the ridge section; an insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode formed to cover a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and a second electrode formed on a surface, of the semiconductor substrate, opposite to the semi-polar surface. | 06-20-2013 |
20130177035 | NITRIDE SEMICONDUCTOR LASER, EPITAXIAL SUBSTRATE - A nitride semiconductor laser comprises a conductive support base having a primary surface of gallium nitride based semiconductor, an active layer on the primary surface, and a p-type cladding region on the primary surface. The primary surface is tilted to a reference plane perpendicular to a reference axis extending in the c-axis direction of the gallium nitride based semiconductor. The p-type cladding region comprises a first p-type group III nitride semiconductor layer of an AlGaN layer anisotropically-strained, and a second p-type group III nitride semiconductor layer of material different from the AlGaN layer. The first p-type group III nitride semiconductor layer is provided between the second p-type group III nitride semiconductor layer and the active layer. The AlGaN layer has the largest bandgap in the p-type cladding region. The second p-type group III nitride semiconductor layer has a resistivity lower than the first p-type group III nitride semiconductor layer. | 07-11-2013 |
20130208747 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of In | 08-15-2013 |
20130308670 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - A group-III nitride semiconductor laser device comprises: a laser structure including a semiconductor region and a support base having a semipolar primary surface of group-III nitride semiconductor; a first reflective layer, provided on a first facet of the region, for a lasing cavity of the laser device; and a second reflective layer, provided on a second facet of the region, for the lasing cavity. The laser structure includes a laser waveguide extending along the semipolar surface. A c+ axis vector indicating a <0001> axial direction of the base tilts toward an m-axis of the group-III nitride semiconductor at an angle of not less than 63 degrees and less than 80 degrees with respect to a vector indicating a direction of an axis normal to the semipolar surface. The first reflective layer has a reflectance of less than 60% in a wavelength range of 525 to 545 nm. | 11-21-2013 |
20150050768 | LASER DIODE DEVICE AND METHOD OF MANUFACTURING LASER DIODE DEVICE - A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer including a light emitting layer, the epitaxial layer being formed on the semi-polar surface of the semiconductor substrate, and the epitaxial layer including a ridge section; a first electrode formed on a top surface of the ridge section; an insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode formed to cover a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and a second electrode formed on a surface, of the semiconductor substrate, opposite to the semi-polar surface. | 02-19-2015 |
Patent application number | Description | Published |
20100000311 | TRANSDUCER ASSEMBLIES FOR DOWNHOLE TOOLS - Methods and related systems are described relating to a sealed acoustic transducer assembly for use in a wellbore is provided. One or more acoustic transducer elements, which can be receivers or transmitters, are housed in an elongated fluid filled sealed container. The sealed container is adapted to be removeably mounted to a portion of a drill collar. The container, which for example can be made of thin corrugated metal or rubber, includes flexible portions along the length of the container which allows for volume changes when exposed to changes in external pressure and/or temperature. | 01-07-2010 |
20120218862 | Apparatus for Logging while Drilling Acoustic Measurement - Apparatus for acoustic measurement in a downhole environment to enable high quality measurements to be obtained in difficult logging conditions are disclosed. An example apparatus includes a downhole tool having a body with a plurality of transmitters located on the body. A receiver is located on the body a distance from the transmitters and an attenuator section is integrally formed on the body between at least one transmitter and the receiver. | 08-30-2012 |
20120324993 | Transducer Assembly For A Downhole Tools - Methods and related systems are described relating to a sealed acoustic transducer assembly for use in a wellbore is provided. A tool body is deployed in the wellbore, having a groove and a sealed acoustic transducer assembly removeably mounted therein. The transducer assembly includes an acoustic transducer element, and an elongated fluid filled sealed container housing the transducer element. The container includes flexible portions along the length of the container which allows for volume changes when exposed to changes in external pressure and/or temperature. Acoustic measurements downhole are made using the transducer element. | 12-27-2012 |
20140186743 | FUEL CELL CATALYST LAYER AND USES THEREOF - Provided is a fuel cell catalyst layer which has a catalytic performance equivalent to or higher than fuel cell catalyst layers containing platinum alone and which is inexpensive. The fuel cell catalyst layer of the present invention includes a metal oxycarbonitride-containing layer (I) and a platinum-containing layer (II). It is preferable that the mass ratio per unit area of the metal oxycarbonitride in the layer (I) to platinum in the layer (II) (metal oxycarbonitride/platinum) is 2 to 500. It is preferable that the mass per unit area of platinum in the layer (II) is 0.005 to 0.2 mg/cm | 07-03-2014 |
Patent application number | Description | Published |
20090025675 | COMBUSTION CHAMBER STRUCTURE FOR DIRECT INJECTION DIESEL ENGINE - A combustion chamber structure for a direct injection diesel engine is provided which can increase recirculated amount of exhaust gas while avoiding generation of black smoke and deterioration of fuel efficiency as much as possible. | 01-29-2009 |
20090304266 | CORRESPONDING POINT SEARCHING METHOD AND THREE-DIMENSIONAL POSITION MEASURING METHOD - A plurality of images (I, J) of an object (M) when viewed from different viewpoints are taken in. One of the images is set as a standard image (I), and the other image is set as a reference image (J). One-dimensional pixel data strings with a predetermined width (W) are cut out from the standard image (I) and the reference image (J) along epipolar lines (EP | 12-10-2009 |
20120288164 | COMPARING DEVICE - When comparing a reference image and a registered image, a reference image is defined as a high-resolution image of the highest resolution and a first low-resolution image is generated on a lower level, and a second low-resolution image is generated on a lower level. Registered images are read one-at-a-time, feature regions are set in the hierarchical images of the registered images, and corresponding regions are found in the reference image through hierarchical searching from the low-resolution image towards the high-resolution image. An evaluation is made as to whether to select the registered image that has been read out, based on a similarity between the low-resolution hierarchical image, for example, a feature region of the hierarchical image of the registered image, and the corresponding region of the hierarchical image of the reference image, to narrow down the registered images to be compared to the reference image. | 11-15-2012 |
20130140349 | IMPELLER MANUFACTURING METHOD - The present invention relates to a method of joining a hub | 06-06-2013 |
20130223699 | FACIAL VALIDATION SENSOR - A facial validation sensor includes an imaging element, a validating unit and a feedback unit. The validating unit performs validation of an individual to be validated based on facial image data of the individual, imaged by the imaging element, and facial image data registered in advance. The feedback unit guides a face of the individual to be within an imaging range that is imaged by the imaging element. The feedback unit is an indicator providing unit that provides an indicator that is viewable from a specific direction within the imaging range that is imaged by the imaging element. | 08-29-2013 |
20130320073 | IMPELLER MANUFACTURING METHOD - The present invention relates to an impeller manufacturing method in which a thermal cycle is performed on an assembly body with a brazing material formed of a Ni-containing Au alloy being placed at a bond portion of at least two impeller constituent members. The thermal cycle includes a temperature increasing process with a temperature increasing rate of 20° C./hr. to 100° C./hr., the process including a first intermediate retention and a second intermediate retention each keeping the temperature, the first intermediate retention performed in a temperature range of 500° C. to 850° C. and the second intermediate retention performed in a temperature range of 850° C. to 950° C. (but not including 850° C.). In the thermal cycle, the temperature is increased in a temperature range exceeding 950° C. after the second intermediate retention at a rate lower than that before the second intermediate retention. | 12-05-2013 |
20140283790 | COMMON RAIL FUEL INJECTION SYSTEM - A common rail fuel injection system includes injectors having a fuel intake port and being provided for respective cylinders of a multi-cylinder diesel internal combustion engine, a common rail accumulating pressurized fuel, a high-pressure supply pump supplying high-pressure fuel, a fuel supply pipe causing the common rail and the high-pressure supply pump to communicate with each other. The fuel injection pipes communicating with pressure supply ports provided in the common rail and causing the injectors and the pressure supply ports to communicating with each other. The fuel injection pipes cause at least three injectors to communicate with one another in series. The number N | 09-25-2014 |