Patent application number | Description | Published |
20090159823 | MECHANICAL VALVE - A mechanical valve has a main body having a cylinder hole formed therein, a movable element that is inserted into the cylinder hole and that moves forwardly and rearwardly, and a drive section that drives the movable element. A plurality of openings through which air passes are formed in an internal peripheral surface of the cylinder hole, and the openings are opened and closed as a result of forward and rearward movements of the movable element. A movable magnet is fastened to each of both ends of the movable element. Electromagnets opposing the respective movable magnets are provided in a drive section. The movable element is actuated by utilization of magnetic force of the electromagnets. | 06-25-2009 |
20100051066 | COMPOSITION FOR REMOVING RESIDUE FROM WIRING BOARD AND CLEANING METHOD - A composition for removing a residue from a wiring board containing an oxidizing agent and an azole compound and having a pH of from 1 to 7 and a cleaning method of a wiring board for removing a residue after dry etching by using this composition are provided. By using the composition for removing a residue of the present invention, in manufacturing a wiring board, residues remaining after dry etching which are derived from a resist or metals can be effectively removed without corroding titanium or titanium alloys with high corrosiveness. In particular, a semiconductor device using a wiring board containing titanium or titanium alloys can be efficiently manufactured. | 03-04-2010 |
20100197136 | COMPOSITION FOR CLEANING AND RUST PREVENTION AND PROCESS FOR PRODUCING SEMICONDUCTOR ELEMENT OR DISPLAY ELEMENT - A composition for cleaning and corrosion inhibition which is used in a step of manufacturing a semiconductor device or a display device having a copper-containing metallic wiring is provided, wherein the corrosion inhibitor component is any one of pyrazole, a pyrazole derivative such as 3,5-dimethylpyrazole, a triazole derivative such as 1,2,4-triazole, an aminocarboxylic acid such as iminodiacetic acid or ethylenediaminedipropionic acid hydrochloride, or a disulfide compound such as diisopropyl disulfide or diethyl disulfide; and the cleaning agent component is any one of ammonium fluoride, tetramethylammonium fluoride, ammonium acetate, acetic acid, glyoxylic acid, oxalic acid, ascorbic acid, 1,2-diaminopropane or dimethylacetamide. Also, a method for manufacturing a semiconductor device or the like using the composition for cleaning and corrosion inhibition is provided. | 08-05-2010 |
20110212617 | LIQUID FOR PROTECTING COPPER WIRING SURFACE AND METHOD FOR MANUFACTURING SEMICONDUCTOR CIRCUIT ELEMENT - A copper wiring material surface protective liquid is provided that is used in production of a semiconductor circuit device containing copper wiring, and consists of an aqueous solvent and an acetylene alcohol compound containing at least 3-phenyl-2-propyn-1-ol. A method for producing a semiconductor circuit device is provided that contains: forming an insulating film and/or a diffusion preventing film on a silicon substrate; then forming a copper film by a sputtering; then forming a copper film or a copper alloy film containing 80% by mass or more of copper thereon by a plating method; and flattening the film by a chemical mechanical polishing (CMP) method, thereby providing a semiconductor substrate containing a flattened copper wiring, in which the semiconductor substrate having an exposed surface of a copper wiring material is treated by making in contact with the copper wiring material surface protective liquid. | 09-01-2011 |
20110237071 | COPPER WIRING SURFACE PROTECTIVE LIQUID AND METHOD FOR MANUFACTURING SEMICONDUCTOR CIRCUIT - A copper wiring material surface protective liquid for production of a semiconductor device is provided, containing an oxyalkylene adduct of an acetylenediol containing an acetylenediol having an oxyalkylene having 2 or 3 carbon atoms added thereto. A method for producing a semiconductor circuit device is provided, containing: forming an insulating film and/or a diffusion preventing film on a silicon substrate; then forming a copper film by a sputtering method; then forming a copper wiring containing 80% by mass or more of copper thereon by a plating method; and flattening the wiring by a chemical mechanical polishing (CMP) method, thereby providing a semiconductor substrate containing a copper wiring, the semiconductor substrate having an exposed surface of a copper wiring material being treated by making in contact with the copper wiring material surface protective liquid. | 09-29-2011 |
20110256483 | RESIDUE REMOVING LIQUID COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR ELEMENT USING SAME - Provided are a residue removing liquid composition capable of completely removing a resist residue and a titanium (Ti)-derived residue that remains after dry etching and ashing in via hole formation in a production process for a semiconductor substrate having metal wiring of aluminium (Al) or an Al alloy, at a low temperature in a short time, not corroding parts of an interlayer insulating material, a wiring material and others, and a cleaning method for semiconductor devices using it. | 10-20-2011 |
20120135604 | PROCESSING LIQUID FOR SUPPRESSING PATTERN COLLAPSE OF FINE METAL STRUCTURE, AND METHOD FOR PRODUCING FINE METAL STRUCTURE USING SAME - There are provided a processing liquid that is capable of suppressing pattern collapse of a fine metal structure, such as a semiconductor device and a micromachine, and a method for producing a fine metal structure using the same. The processing liquid for suppressing pattern collapse of a fine metal structure, contains a phosphate ester and/or a polyoxyalkylene ether phosphate ester, and the method for producing a fine metal structure, uses the same. | 05-31-2012 |
20120181249 | PROCESSING LIQUID FOR SUPPRESSING PATTERN COLLAPSE OF FINE METAL STRUCTURE AND METHOD FOR PRODUCING FINE METAL STRUCTURE USING SAME - There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing at least one member selected from an imidazolium halide having an alkyl group containing 12, 14 or 16 carbon atoms, a pyridinium halide having an alkyl group containing 14 or 16 carbon atoms, an ammonium halide having an alkyl group containing 14, 16 or 18 carbon atoms, a betaine compound having an alkyl group containing 12, 14 or 16 carbon atoms, and an amine oxide compound having an alkyl group containing 14, 16 or 18 carbon atoms, and a method for producing a fine metal structure using the same. | 07-19-2012 |
20120205345 | TREATMENT SOLUTION FOR PREVENTING PATTERN COLLAPSE IN METAL FINE STRUCTURE BODY, AND PROCESS FOR PRODUCTION OF METAL FINE STRUCTURE BODY USING SAME - There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing a pattern collapse suppressing agent that has a hydrocarbyl group containing any one of an alkyl group and an alkenyl group, both of which may be substituted partly or entirely by a fluorine atom, and contains an oxyethylene structure, and a method for producing a fine metal structure using the same. | 08-16-2012 |
20120214722 | TREATMENT SOLUTION FOR PREVENTING PATTERN COLLAPSE IN METAL FINE STRUCTURE BODY, AND PROCESS FOR PRODUCTION OF METAL FINE STRUCTURE BODY USING SAME - There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing at least one member selected from the group consisting of an ammonium halide having a fluoroalkyl group, a betaine compound having a fluoroalkyl group, and an amine oxide compound having a fluoroalkyl group, and a method for producing a fine metal structure using the same. | 08-23-2012 |
20130045597 | LIQUID COMPOSITION FOR CLEANING SEMICONDUCTOR SUBSTRATE AND METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE USING THE SAME - [Problems] An object of the present invention is to provide a cleaning liquid composition which removes residual liquid and contaminants after chemical-mechanical polishing (CMP) of the surface of a semiconductor substrate in the production process of a semiconductor circuit device; and a cleaning method using the cleaning liquid composition. | 02-21-2013 |
20130161284 | TREATMENT LIQUID FOR INHIBITING PATTERN COLLAPSE IN MICROSTRUCTURES, AND MICROSTRUCTURE MANUFACTURING METHOD USING SAID TREATMENT LIQUID - There are provided a processing liquid for suppressing pattern collapse of a microstructure formed of silicon oxide which includes at least one compound selected from the group consisting of a fluoroalkyl group-containing ammonium halide, a fluoroalkyl group-containing betaine compound and a fluoroalkyl group-containing amine oxide compound, and water; and a method for producing a microstructure formed of silicon oxide using the processing liquid. | 06-27-2013 |
20130165365 | TREATMENT LIQUID FOR INHIBITING PATTERN COLLAPSE IN MICROSTRUCTURES, AND MICROSTRUCTURE MANUFACTURING METHOD USING SAID TREATMENT LIQUID - There are provided a processing liquid for suppressing pattern collapse of a microstructure which includes at least one compound selected from the group consisting of an imidazolium halide containing an alkyl group having 12, 14 or 16 carbon atoms, a pyridinium halide containing an alkyl group having 14 or 16 carbon atoms and an ammonium halide containing an alkyl group having 16 or 18 carbon atoms, and water; and a method for producing a microstructure formed of silicon oxide using the processing liquid. | 06-27-2013 |
20130171828 | PROCESSING LIQUID FOR SUPPRESSING PATTERN COLLAPSE OF MICROSTRUCTURE, AND METHOD FOR PRODUCING MICROSTRUCTURE USING SAME - There are provided a processing liquid for suppressing pattern collapse of a microstructure formed of polysilicon which includes at least one compound selected from the group consisting of pyridinium halides containing an alkyl group having 12, 14 or 16 carbon atoms, and water; and a method for producing a microstructure using the processing liquid. | 07-04-2013 |
20130178069 | SILICON ETCHING FLUID AND METHOD FOR PRODUCING TRANSISTOR USING SAME - The present invention relates to a silicon etching solution which is used for selectively etching a dummy gate made of silicon in a process for producing a transistor including a laminate formed of at least a high dielectric material film and a metal gate containing hafnium, zirconium, titanium, tantalum or tungsten by the method of removing the dummy gate made of silicon to replace the dummy gate with the metal gate and which includes 0.1 to 40% by weight of at least one alkali compound selected from the group consisting of ammonia, a diamine and a polyamine represented by the general formula (1), 0.01 to 40% by weight of at least one polyhydric alcohol selected from the group consisting of specific polyhydric alcohols and a non-reducing sugar, and 40 to 99.89% by weight of water, and a process for producing a transistor using the silicon etching solution. | 07-11-2013 |
20130196497 | METHOD FOR PRODUCING TRANSISTOR - According to the present invention, there is provided a process for producing a transistor having a high precision and a high quality with a high yield by selectively etching a natural silicon oxide film, and further by selectively etching a dummy gate made of silicon. The present invention relates to a process for producing a transistor using a structural body which includes a substrate, and a dummy gate laminate formed by laminating at least a high dielectric material film and a dummy gate made of silicon having a natural silicon oxide film on a surface thereof, a side wall disposed to cover a side surface of the laminate and an interlayer insulating film disposed to cover the side wall which are provided on the substrate, said process including an etching step using a specific etching solution and thereby replacing the dummy gate with an aluminum metal gate. | 08-01-2013 |
20130203263 | SILICON ETCHANT AND METHOD FOR PRODUCING TRANSISTOR BY USING SAME - According to the present invention, there is provided an etching solution used for selectively etching a dummy gate made of silicon in a process for producing a transistor including a laminate formed of at least a high dielectric material film and an aluminum metal gate by the method of removing the dummy gate made of silicon to replace the dummy gate with the aluminum metal gate, and a process for producing a transistor using the etching solution. The present invention relates to a silicon etching solution used for etching the dummy gate made of silicon which includes 0.1 to 40% by weight of at least one alkali compound selected from the group consisting of ammonia, a diamine and a polyamine represented by the general formula (1), 5 to 50% by weight of at least one polyhydric alcohol represented by the general formula (2) and 40 to 94.9% by weight of water, and a process for producing a transistor using the silicon etching solution. | 08-08-2013 |
20130260571 | TREATMENT LIQUID FOR INHIBITING PATTERN COLLAPSE IN MICROSTRUCTURE AND METHOD OF MANUFACTURING MICROSTRUCTURE USING THE SAME - The objects of the present invention are to provide a treatment liquid able to inhibit pattern collapse in a microstructure such as a semiconductor device or a micromachine, as well as a method of manufacturing a microstructure using the same. | 10-03-2013 |
Patent application number | Description | Published |
20090093315 | Storage medium storing load detection program, load detection apparatus, and load detection method - A game system includes a game apparatus. To the game apparatus are connected a monitor, a controller, and a load controller. When the game apparatus starts a game, prior to starting the main content, a weight value of a player is detected and the weight value is set as a reference value. When the reference value is already set, the detected weight value of the player is compared with the reference value. When a comparison result shows a match, the game apparatus continues game play. On the other hand, when the comparison result shows a mismatch, the game apparatus confirms the player whether to continue the game and when the game is continued, the weight value of the player detected this time is reset as the reference value. | 04-09-2009 |
20120229382 | COMPUTER-READABLE STORAGE MEDIUM, INFORMATION PROCESSING SYSTEM, AND INFORMATION PROCESSING METHOD - A movement direction of an object arranged in a virtual world is set based on attitude data. Further, the object is moved in the movement direction in the virtual world in accordance with data based on a load applied to a load detection device. An image showing the virtual world including at least the object or an image showing the virtual world viewed from the object is displayed as a first image on a portable display device. | 09-13-2012 |
20120229448 | COMPUTER-READABLE STORAGE MEDIUM, INFORMATION PROCESSING SYSTEM, AND INFORMATION PROCESSING METHOD - It is determined, based on attitude data, whether or not a direction of a predetermined axis set in a portable display device is within a first range. When the result of the determination is that the direction of the predetermined axis is within the first range, an action of a first object arranged in a virtual world is controlled based on the direction of the predetermined axis. When it is determined that the direction of the predetermined axis is outside the first range, at least an action of a second object arranged in the virtual world is controlled based on the direction of the predetermined axis. Then, a first image showing the virtual world including at least the first object and the second object is displayed on the portable display device. | 09-13-2012 |
20120229516 | COMPUTER-READABLE STORAGE MEDIUM, INFORMATION PROCESSING SYSTEM, AND INFORMATION PROCESSING METHOD - An object arranged in a virtual world is caused to move in accordance with data based on a load applied to a load detection device. Then, based on attitude data outputted from a portable display device and a position of the object in the virtual world, a first virtual camera for generating an image of the virtual world is controlled, and a first image representing the virtual world viewed from the first virtual camera is displayed on the portable display device. | 09-13-2012 |
20120231881 | INFORMATION PROCESSING SYSTEM, COMPUTER-READABLE STORAGE MEDIUM, AND INFORMATION PROCESSING METHOD - A load applied to a first input device is sequentially detected, and a first display image to be displayed on a portable display device is sequentially generated based on load data. The portable display device obtains image data representing the first display image, and sequentially displays the first display image represented by the obtained image data. In this exemplary embodiment, when a user performs an operation based on his/her action and thereby a process based on the user's action is performed, the user is allowed to view the result of the process in a favorable situation. | 09-13-2012 |
20140098139 | DISPLAY APPARATUS, STORAGE MEDIUM HAVING STORED IN INFORMATION PROCESSING PROGRAM, INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING SYSTEM, AND IMAGE DISPLAY METHOD - An example information processing apparatus determines whether an orientation of a display unit capable of being held by a user is in a first state or in a second state. If it has been determined that the orientation of the display unit is in the first state, the information processing apparatus sets, in a predetermined area, a display range to be displayed in the display unit, in accordance with the orientation of the display unit. If it has been determined that the orientation of the display unit is in the second state, the information processing apparatus sets the display range, regardless of the orientation of the display unit. | 04-10-2014 |
20140243711 | INFORMATION-PROCESSING SYSTEM - An exemplary information-processing system includes: a first measuring unit that measures body activity amount of a user; a second measuring unit that measures body activity amount of the user, the second measuring unit being different from the first measuring unit; a calculation unit that executes a predetermined calculation based on at least the body activity amount measured by the first measuring unit and the body activity amount measured by the second measuring unit; and an output unit that outputs information based on a result of the calculation executed by the calculation unit. | 08-28-2014 |