Patent application number | Description | Published |
20090263957 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface. | 10-22-2009 |
20100099241 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device according to one embodiment includes: removing a native oxide film and adhering silicon nitrides on an area of a Si based substrate in hydrogen gas atmosphere under a condition in which a pressure is a first pressure and a temperature is a first temperature, a silicon nitride-containing member being formed on the Si based substrate, the area being a area not covered by the member; lowering the temperature to a second temperature from the first temperature while maintaining the pressure at the first pressure in hydrogen gas atmosphere; lowering the pressure to a second pressure from the first pressure while maintaining the temperature at the second temperature in hydrogen gas atmosphere; and epitaxially growing a crystal on the area of the Si based substrate in a precursor gas atmosphere after the pressure is lowered to the second pressure, the crystal including at least one of Si and Ge, the precursor gas atmosphere including at least one of hydrogen, Si and Ge. | 04-22-2010 |
20100327329 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - According to one embodiment, a semiconductor device includes a transistor, an element isolation insulating film, and a metal silicide layer. The transistor contains a gate electrode and an epitaxial crystal layer. The epitaxial crystal layer is formed on at least one side of the gate electrode in the semiconductor substrate and includes a facet having a different plane direction from a principal plane of the semiconductor substrate. The element isolation insulating film contains a lower layer and an upper layer. A horizontal distance between the upper layer and the gate electrode is smaller than a horizontal distance between the lower layer and the gate electrode. A part of the upper layer contacts with the facet. The metal silicide layer is formed on an upper surface of the epitaxial crystal layer and on a region of the facet above a contact portion of the facet with the upper layer. | 12-30-2010 |
20120090535 | Method of Fabricating Semiconductor Device - A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface. | 04-19-2012 |
Patent application number | Description | Published |
20090108412 | SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE - A semiconductor substrate includes: a silicon support substrate with a first crystal orientation; a silicon functional substrate which is formed on the silicon support substrate and which has a first crystalline region with a crystal orientation different from the first crystal orientation of the silicon support substrate and a second crystalline region with a crystal orientation equal to the first crystal orientation of the silicon support substrate; and a defect creation-preventing region formed at an interface between the first crystalline region and the second crystalline region of the silicon functional substrate so as to be at least elongated to a main surface of the silicon support substrate. | 04-30-2009 |
20090152622 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor region having a channel region, and containing silicon as a main component, second semiconductor regions sandwiching the first semiconductor region, formed of SiGe, and applying stress to the first semiconductor region, cap layers provided on the second semiconductor regions, and formed of silicon containing carbon or SiGe containing carbon, and silicide layers provided on the cap layers, and formed of nickel silicide or nickel-platinum alloy silicide. | 06-18-2009 |
20100006907 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a FET using a SiGe film as a channel region, dispersion of the Ge concentration in the SiGe film and dispersion of the film thickness of the SiGe film are suppressed. | 01-14-2010 |
20100029053 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device for forming an n-type FET has forming an isolation insulating film on a surface of the semiconductor substrate consisting primarily of silicon, the isolation insulating film partitioning a device region of the semiconductor substrate; forming a gate insulating film on the device region of the semiconductor substrate; forming a gate electrode on the gate insulating film; amorphizing regions to be source/drain contact regions adjacent to the gate electrode, of the device region, by ion implanting of one of a carbon cluster ion, a carbon monomer ion and a molecular ion containing carbon into the regions to be the source/drain contact regions; forming an impurity-implanted layer to be the source/drain contact regions by ion implanting at least one of arsenic and phosphorus as an n-type impurity into the amorphized regions; and activating the carbon and the impurity in the impurity-implanted layer by heat treatment. | 02-04-2010 |
20100084685 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes an SiGe film formed on part of a semiconductor substrate and including a channel region and at least part of source/drain extension regions between which the channel region is positioned, source/drain contact regions formed in a surface area of the semiconductor substrate and brought into contact with the pair of source/drain extension regions, a gate structure having a gate insulation film formed on the SiGe film and a gate electrode formed on the gate insulation film, first sidewall films formed on the SiGe film along side surfaces of the gate structure, second sidewall films formed on the SiGe film along the first sidewall films, third sidewall films formed on the source/drain contact regions along side surfaces of the SiGe film and the second sidewall films, and first silicide films formed on the source/drain contact regions. | 04-08-2010 |