Patent application number | Description | Published |
20100156450 | Enabling higher operation speed and/or lower power consumption in a semiconductor integrated circuit device - A semiconductor integrated circuit device | 06-24-2010 |
20110031577 | Photodiode Array - A photodiode array for near infrared rays that includes photodiodes having a uniform size and a uniform shape, has high selectivity for the wavelength of received light between the photodiodes, and has high sensitivity with the aid of a high-quality semiconducting crystal containing a large amount of nitrogen, a method for manufacturing the photodiode array, and an optical measurement system are provided. The steps of forming a mask layer | 02-10-2011 |
20110140082 | LIGHT-RECEIVING ELEMENT AND LIGHT-RECEIVING ELEMENT ARRAY - Provided are a light-receiving element which has sensitivity in the near-infrared region and in which a good crystal quality is easily obtained, a one-dimensional or two-dimensional array of the light-receiving elements is easily formed with a high accuracy, and a dark current can be reduced; a light-receiving element array; and methods for producing the same. | 06-16-2011 |
20110261359 | GAS MONITORING DEVICE, COMBUSTION STATE MONITORING DEVICE, SECULAR CHANGE MONITORING DEVICE, AND IMPURITY CONCENTRATION MONITORING DEVICE - [Object] To provide a gas monitoring device etc. with which gas monitoring can be preformed at high sensitivity by using an InP-based photodiode in which a dark current is reduced without a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 μm or more. | 10-27-2011 |
20120223290 | LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEMENT ARRAY, METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT AND METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT ARRAY - A light-receiving element includes a group III-V compound semiconductor stacked structure that includes an absorption layer having a pn-junction therein. The stacked structure is formed on a group III-V compound semiconductor substrate. The absorption layer has a multi- quantum well structure composed of group III-V compound semiconductors, and the pn-junction is formed by selectively diffusing an impurity element into the absorption layer. A diffusion concentration distribution control layer composed of a III-V group semiconductor is disposed in contact with the absorption layer on a side of the absorption layer opposite the side adjacent to the group III-V compound semiconductor substrate. The bandgap energy of the diffusion concentration distribution control layer is smaller than that of the group III-V compound semiconductor substrate. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is 5×10 | 09-06-2012 |
20150014746 | SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE - A switching device includes a power semiconductor chip, and a drive circuit which drives the power semiconductor chip. In the power semiconductor chip, a path through which a main current flows is connected to a first source terminal, and a ground terminal of the drive circuit is connected to a second source terminal of the power semiconductor chip. As a result, a gate drive path is separated from the path through which the main current flows, and therefore, the influence of induced electromotive force which is generated due to source parasitic inductance, on a gate-source voltage, is reduced. | 01-15-2015 |
Patent application number | Description | Published |
20090295960 | PHOTODIODE, PHOTODIODE ARRAY AND IMAGE PICKUP DEVICE - A photodiode that can obtain a clear signal or image in a case in which noise that is not limited to a dark current is high, a photodiode array, and an image pickup device are provided. The photodiode includes a sensor section that is provided on a first semiconductor having a band gap energy which allows input light to be received; a modulated light-emitting section that is positioned behind the sensor section with respect to the input light, and that emits modulated light to the sensor section; and a signal processor that is formed on a second semiconductor which transmits the modulated light, and that is positioned between the sensor section and the modulated light emitting section. | 12-03-2009 |
20100171097 | DETECTION DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a detection device includes the steps of providing bonding bumps on at least one of a light-receiving element array and a read-out circuit multiplexer, fixing a bump height adjusting member for adjusting the heights of the bumps to the light-receiving element array and/or the read-out circuit multiplexer on which the bumps are provided, and pressing a flat plate on the tops of the bumps and deforming the bumps until the flat plate comes in contact with the end of the bump height adjusting member. | 07-08-2010 |
20100181484 | NEAR-INFRARED IMAGING SENSOR - A near-infrared imaging sensor according to the present invention includes a photodiode array sensitive to light with a wavelength of 1.2 to 3 μm and a multiplexer including a signal readout circuit. The near-infrared imaging sensor is contained in a housing and is vacuum-sealed. The housing includes a main body section and a lid covering the main body section. The lid is made of a material transparent to light with a wavelength of 1.2 to 3 μm. | 07-22-2010 |
20100258707 | PHOTODIODE ARRAY AND IMAGE PICKUP DEVICE USING THE SAME - A photodiode array includes a plurality of photodiodes arranged in a single semiconductor laminate including a first conductivity-type semiconductor layer and an absorption layer overlying the first conductivity-type semiconductor layer. The photodiode array also includes a functional portion among the photodiodes in a predetermined proportion. The functional portion acts as a monitor light receiving portion and/or a charge sweep portion. Each of the photodiodes and functional portion has a second conductivity-type region reaching the absorption layer from the surface of the semiconductor laminate and an electrode in ohmic contact with the second conductivity-type region. | 10-14-2010 |
20100258894 | PHOTODIODE ARRAY AND IMAGE PICKUP DEVICE USING THE SAME - A photodiode array with reduced optical crosstalk and an image pickup device using it are provided. The photodiode array | 10-14-2010 |
20110147707 | DETECTION DEVICE, PHOTODIODE ARRAY, AND METHOD FOR MANUFACTURING THE SAME - The present invention provides an image pickup device used to capture an image of an object by receiving light in a near infrared region reflected from the object. The image pickup device includes semiconductor light-receiving elements each having a light-receiving layer with a band gap wavelength of 1.65 to 3.0 μm. | 06-23-2011 |
20120217478 | SEMICONDUCTOR DEVICE, OPTICAL SENSOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device | 08-30-2012 |
20120298957 | LIGHT RECEIVING ELEMENT, LIGHT RECEIVING ELEMENT ARRAY, HYBRID-TYPE DETECTING DEVICE, OPTICAL SENSOR DEVICE, AND METHOD FOR PRODUCING LIGHT RECEIVING ELEMENT ARRAY - The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array | 11-29-2012 |
20130032780 | PHOTODIODE, OPTICAL SENSOR DEVICE, AND PHOTODIODE MANUFACTURING METHOD - A photodiode and the like capable of preventing the responsivity on the short wavelength side from deteriorating while totally improving the responsivity in a type II MQW structure, is provided. The photodiode is formed on a group III-V compound semiconductor substrate | 02-07-2013 |
20130099203 | PHOTODETECTOR AND METHOD OF MANUFACTURING THE PHOTODETECTOR - A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6. | 04-25-2013 |
20130248821 | LIGHT RECEIVING ELEMENT, SEMICONDUCTOR EPITAXIAL WAFER, METHOD FOR MANUFACTURING THE LIGHT RECEIVING ELEMENT, METHOD FOR MANUFACTURING THE SEMICONDUCTOR EPITAXIAL WAFER, AND DETECTING DEVICE - A light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 μm, a buffer layer located in contact with the InP substrate, and a light-receiving layer having a multiple quantum well structure, the light-receiving layer having a cutoff wavelength of 3 μm or more and being lattice-matched with the buffer layer. In the light receiving element, the buffer layer is epitaxially grown on the InP substrate while the buffer layer and the InP substrate exceed a range of a normal lattice-matching condition, and the buffer layer is constituted by a GaSb layer. | 09-26-2013 |
20130313521 | PHOTODIODE AND METHOD FOR PRODUCING THE SAME - An object of the present invention is to provide, for example, a photodiode that can have sufficiently high sensitivity in a near-infrared wavelength range of 1.5 μm to 1.8 μm and can have a low dark current. A photodiode ( | 11-28-2013 |
Patent application number | Description | Published |
20100032265 | ARTICLE CONVEYING DEVICE - An article conveying device | 02-11-2010 |
20120140161 | POLYMER FILM, RETARDATION FILM, POLARIZING PLATE, LIQUID CRYSTAL DISPLAY DEVICE AND ULTRAVIOLET ABSORBER - A polymer film, containing a merocyanine compound having λ | 06-07-2012 |
20130120839 | CELLULOSE ACYLATE FILM, PROTECTIVE FILM FOR POLARIZING PLATE, POLARIZING PLATE, AND LIQUID CRYSTAL DISPLAY DEVICE - There is provided a cellulose acylate film, containing a hindered amin-based compound, wherein the hindered amine-based compound is contained in an amount of 0.001% by mass to 5% by mass based on cellulose acylate, a minimum value of Knoop hardness is 170 N/mm | 05-16-2013 |
20130189449 | POLARIZING PLATE, METHOD FOR PREPARING THE SAME, AND LIQUID CRYSTAL DISPLAY DEVICE - A polarizing plate includes two protective films and a polarizer provided between the two protective films, and the polarizer has a thickness of 3 μm to 18 μm, at least one of the protective films has a thickness of 3 μm to 40 μm and contains at least one resin and a compound in an amount of 1 part by mass to 20 parts by mass based on 100 parts by mass of the resin, the compound having at least one hydrogen-donating group capable of forming a hydrogen bond and a ratio of molecular weight to number of aromatic rings of 300 or less, and the polarizing plate has a thickness of 15 μm to 70 μm. | 07-25-2013 |
Patent application number | Description | Published |
20130182736 | QUANTUM CASCADE LASER - A quantum cascade laser includes a substrate having a conductivity type, substrate having a first region, a second region, and a third region; a semiconductor lamination provided on a principal surface of the substrate, the semiconductor lamination including a mesa stripe section provided on the second region, an upper cladding layer having the same conductivity type as the substrate, a first burying layer, and a second burying layer, the mesa stripe section including a core layer; and an electrode provided on the semiconductor lamination. The first and second burying layers are provided on the first and third regions and on both side faces of the mesa stripe section. The upper cladding layer is provided on the mesa stripe section, the first burying layer, and the second burying layer. The first and second burying layers include a first and second semi-insulating semiconductor regions comprised of a semi-insulating semiconductor material. | 07-18-2013 |
20130334492 | LIGHT RECEIVING ELEMENT AND OPTICAL DEVICE - A light-receiving element includes a III-V group compound semiconductor substrate, a light-receiving layer having a type II multi-quantum well structure disposed on the substrate, and a type I wavelength region reduction means for reducing light in a wavelength region of type I absorption in the type II multi-quantum well structure disposed on a light incident surface or between the light incident surface and the light-receiving layer. | 12-19-2013 |
20140042389 | LIGHT EMITTING ELEMENT AND OPTICAL DEVICE - An active layer having a type 2 multi-quantum well structure includes a plurality of pair thickness groups having different thicknesses, including a first pair thickness group and a second pair thickness group. The first pair thickness group g | 02-13-2014 |
20140312304 | LIGHT RECEIVING ELEMENT, SEMICONDUCTOR EPITAXIAL WAFER, DETECTING DEVICE, AND METHOD FOR MANUFACTURING LIGHT RECEIVING ELEMENT - Provided are a light receiving element etc. which have a high responsivity over the near- to mid-infrared region and stably have a high quality while maintaining the economical efficiency. The light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 μm, a middle layer that is epitaxially grown on the InP substrate, a GaSb buffer layer located in contact with the middle layer, and a light-receiving layer that is epitaxially grown on the GaSb buffer layer and that has a type-II multiple quantum well structure. The GaSb buffer layer is epitaxially grown on the middle layer while exceeding a range of a normal lattice-matching condition. | 10-23-2014 |
Patent application number | Description | Published |
20130329761 | QUANTUM CASCADE SEMICONDUCTOR LASER - A quantum cascade semiconductor laser includes a n-type semiconductor substrate, the substrate having a main surface; a mesa waveguide disposed on the substrate, the mesa waveguide including a core layer and an n-type upper cladding layer disposed on the core layer; a first semiconductor layer disposed on a side surface of the mesa waveguide and the main surface of the substrate, the first semiconductor layer being in contact with the side surface of the mesa waveguide; and a second semiconductor layer disposed on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer constitute a burying region embedding the side surfaces of the mesa waveguide. The first semiconductor layer is formed of at least one of a semi-insulating semiconductor and a p-type semiconductor. In addition, the second semiconductor layer is formed of an n-type semiconductor. | 12-12-2013 |
20140367818 | IMAGE SENSOR - An image sensor includes a package having a window; a sensor chip facing the window, the sensor chip having a pixel region, the sensor chip having an electrode; a read-out circuit disposed farther from the window than the sensor chip, the read-out circuit having a read-out electrode connected to the electrode of the sensor chip; and a shielding plate disposed outside the pixel region of the sensor chip. The shielding plate is configured to block transmission of light. | 12-18-2014 |
20150035989 | OPTICAL SENSOR APPARATUS - An optical sensor apparatus includes a package having a window; a sensor chip having an array of light receiving devices and a pixel electrode connected to the light receiving device, the sensor chip having an incidence surface that faces the window of the package; and a read-out circuit disposed under the sensor chip, the read-out circuit having a read-out electrode electrically connected to the pixel electrode of the sensor chip. The sensor chip and the read-out circuit are housed in the package. In plan view from the sensor chip, the read-out circuit is overlapped with the sensor chip, and the read-out circuit has no portion extending off the sensor chip. | 02-05-2015 |