Patent application number | Description | Published |
20100087307 | STRENGTHENED GLASS SUBSTRATE AND PROCESS FOR PRODUCING THE SAME - An object of the invention is to obtain a glass substrate having high mechanical strength by reconciling suitability for ion exchange and devitrification proof in a glass. The strengthened glass substrate of the invention is a strengthened glass substrate having a compression stress layer in the surface thereof, the glass substrate having a glass composition including, in terms of % by mass, 40-70% of SiO | 04-08-2010 |
20130157172 | IONICALLY CONDUCTIVE MATERIAL AND PROCESS FOR PRODUCING SAME - Provided is an ion-conducting material, comprising, as a composition in terms of mol o, 15 to 80% of P | 06-20-2013 |
20130213852 | ELECTRICAL ELEMENT PACKAGE - Provided is an electrical element package, comprising an element substrate on which an electrical element is provided, a sealing substrate provided at a distance from a surface of the element substrate on a side of the electrical element so as to be opposed to the element substrate, and a glass frit for hermetically sealing a gap between the element substrate and the sealing substrate so as to surround the electrical element, wherein the electrical element package comprises a protective film for protecting an electrode from laser light applied in welding the glass frit, the protective film being provided between the element substrate and the glass frit. | 08-22-2013 |
Patent application number | Description | Published |
20110214815 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching. | 09-08-2011 |
20110272097 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring. | 11-10-2011 |
20140124139 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part. | 05-08-2014 |