Patent application number | Description | Published |
20090002048 | Reference voltage generating circuit - Disclosed is a reference voltage generating circuit which includes resistors R | 01-01-2009 |
20090003097 | OUTPUT CONTROL SIGNAL GENERATING CIRCUIT - An output control signal generating circuit includes latch circuits that are connected in cascade, and a timing signal generating circuit that generates a timing signal to be supplied to the latch circuits, based on a second clock of which phase is advanced from the phase of a first clock used to take in a read command. The timing signal generating circuit delays the phase of a timing signal to be supplied to a relatively pre-stage latch circuit included in the latch circuits, from the phase of a timing signal to be supplied to a relatively latter stage latch circuit included in the latch circuits. With this arrangement, a latch margin of a first latch circuit does not depend on the cycle of an external clock. Accordingly, even when a clock has a very high speed, the output can be controlled correctly. | 01-01-2009 |
20090009213 | Calibration circuit, semiconductor device including the same, and data processing system - A calibration circuit includes: replica buffers; an up-down counter that changes impedance codes of the replica buffers; latch circuits each holding the impedance codes; an end-determining circuit that activates the latch circuits in response to a completion of impedance adjustments of the replica buffers; and a 32 tCK cycle counter that forcibly activates the latch circuits in response to a lapse of a predetermined period since issuance of the calibration command. Thereby, even when the adjustment is not completed during one calibration period, a subsequent calibration operation can be executed from a previous point. | 01-08-2009 |
20090010091 | ADDRESS COUNTER, SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME, AND DATA PROCESSING SYSTEM - An address counter includes FIFO units and first to third command counters that controls the groups. In the FIFO units, latch circuits including input gates and output gates are connected in parallel. The first command counter conducts any one of the input gates in response to a first internal command; the second command counter conducts any one of the output gates in response to a second internal command; and the third command counter conducts any one of the output gates in response to a third internal command. Thereby, the same address signals can be outputted successively at a plurality of timings, and thus, a circuit scale of the address counter can be reduced. | 01-08-2009 |
20090010092 | ADDRESS COUNTER, SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME, AND DATA PROCESSING SYSTEM - An address counter includes FIFO units and first and second command counters that control the groups. The first command counter has a first mode in which any one of input gates is conducted in response to a first internal command and a second mode in which a plurality of input gates are conducted in response to an internal command. The second command counter has a first mode in which any one of output gates is conducted in response to one of second and third internal commands and second mode in which corresponding output gates are each conducted in response to one of the second and third internal commands. Thereby, when tCCD is small, the first mode can be selected, and when the tCCD is large, the second mode can be selected. | 01-08-2009 |
20090015312 | Calibration circuit, semiconductor device including the same, and memory module - A calibration circuit includes: a replica buffer that drives a calibration terminal; a pre-emphasis circuit connected in parallel to the replica buffer; and an up-down counter that changes impedances of the replica buffer and the pre-emphasis circuit. A replica control circuit causes the replica buffer to conduct based on an impedance code, and a pre-emphasis control circuit causes the pre-emphasis circuit to conduct in an initial stage of a conducting period of the replica buffer. Thereby, even when an external resistor is shared among a plurality of semiconductor devices, for example, a voltage appearing in the calibration terminal can be stabilized at a higher speed. | 01-15-2009 |
20090016120 | Synchronous semiconductor device and data processing system including the same - A synchronous semiconductor device includes: input buffers; a latch-signal generating circuit that generates a latch signal based on a clock signal; latch circuits that latch an address signal in response to the latch signal; delay circuits that supply the latch circuits with the address signal in synchronism with the latch signal; NOR gate circuits that inactivate the address signal in response to a chip select signal becoming inactive, the NOR gate circuits being arranged between the input buffers and the delay circuits. According to the present invention, without stopping an operation of the input buffers or an internal clock signal, consumed power generated between the input buffers and the latch circuits can be effectively reduced. | 01-15-2009 |
20090016139 | SEMICONDUCTOR STORAGE DEVICE - A semiconductor storage device is provided which enables use of an overdrive method at low voltage and for a small device area. The semiconductor device includes: memory cells; sense amplifiers, each having P-channel and N-channel MOS transistors and amplifying a signal read from a memory cell; a first power supply line connected to a source terminal of the P-channel MOS transistor provided in each of the sense amplifiers; a second power supply line which supplies an overdrive voltage to the sense amplifiers at a potential higher than a write potential of the memory cell; a third power supply line connected to an external power supply, a connection element which connects and disconnects the first power supply line and the second power supply line; a capacitance element connected to the second power supply line; and a resistance element inserted between the second power supply line and the third power supply line. | 01-15-2009 |
20090016146 | Latency counter, semiconductor memory device including the same, and data processing system - A latency counter includes: a frequency-dividing circuit that generates a plurality of divided clocks LCLKE and LCLKO of which the phases differ each other based on an internal clock LCLK; and frequency-divided counter circuits each of which counts a latency of an internal command based on the corresponding divided clocks LCLKE and LCLKO. Thus, the counting of the latency is performed based not on the internal clock LCLK itself but on the divided clocks LCLKE and LCLKO obtained by frequency-dividing the internal clock LCLK. Thus, even when a frequency of the internal clock LCLK is high, an operation margin can be sufficiently secured. | 01-15-2009 |
20090039930 | DLL CIRCUIT, SEMICONDUCTOR MEMORY DEVICE USING THE SAME, AND DATA PROCESSING SYSTEM - A DLL circuit includes a delay line (CDL) ( | 02-12-2009 |
20090146756 | OUTPUT CIRCUIT FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE HAVING OUTPUT CIRCUIT, AND METHOD OF ADJUSTING CHARACTERISTICS OF OUTPUT CIRCUIT - To decrease the circuit scale necessary for the calibration of the output circuit and to decrease the time required for the calibration operation. The invention includes a first output buffer and a second output buffer that are connected to a data pin, and a calibration circuit that is connected to a calibration pin. The first output buffer and the second output buffer include plural unit buffers. The unit buffers have mutually the same circuit structures. With this arrangement, the impedances of the first output buffer and the second output buffer can be set in common, based on the calibration operation using the calibration circuit. Consequently, both the circuit scale necessary for the calibration operation and the time required for the calibration operation can be decreased. | 06-11-2009 |
20090289499 | Prevention of the propagation of power supply noise from one output circuit to another in a semiconductor device - A semiconductor device is disclosed. A first power supply wiring for connecting between a first output circuit consisting of a predetermined number of output circuits and a first power supply pad which corresponds to the first output circuit, is connected via a resistor with a second power supply wiring for connecting between a second output circuit consisting of a predetermined number of output circuit and a second power supply pad which corresponds to the second output circuit. Thus, power supply noise that is to be propagated to certain output circuits via in-chip output power supply wirings can be reduced. | 11-26-2009 |
20090289659 | Calibration circuit - In a calibration control circuit, a first clock gate circuit restricts passage of reference update clocks during a calibration period so as to stop a first one of the reference update clocks and supplies the restricted reference update clocks as first update clocks CLK | 11-26-2009 |
20090290445 | SEMICONDUCTOR DEVICE HAVING LATENCY COUNTER - A semiconductor device includes a latency setting circuit setting the latency, an input command circuit outputting a normal-phase (reverse-phase) command signal obtained by capturing an input command signal using a normal-phase (reverse-phase) clock, first and second counter circuits each including latch circuits for sequentially shifting the normal-phase (reverse-phase) command signal based on the normal-phase (reverse-phase) clock, a selector circuit controlling a signal path so that the normal-phase (reverse-phase) command signal is transmitted through the first (second) counter circuit when an even latency is set and the normal-phase (reverse-phase) command signal is transmitted so as to be shifted from the first (second) counter circuit to the second (first) counter circuit when an odd latency is set, and a control circuit controlling so that the latch circuits of the first (second) counter circuit are activated in response to the input command signal and stopped after an operation period is elapsed. | 11-26-2009 |
20100045359 | CALIBRATION CIRCUIT - To include a first replica buffer that has substantially the same circuit configuration as a pull-up circuit which constitutes an output buffer and a second replica buffer that has substantially the same circuit configuration as a pull-down circuit which constitutes the output buffer. When a first calibration command ZQCS is issued, either a control signal ACT | 02-25-2010 |
20100097096 | Calibration circuit, semiconductor device including the same, and data processing system - A semiconductor device adjusting an impedance level of an output buffer, includes a replica buffer circuit including a circuit configuration substantially identical to the output buffer, a counter circuit changing an impedance code to vary an impedance level of the replica buffer, a latch circuit temporarily holding the impedance code in response to a control signal, and an end-determining circuit producing the control signal in response to a lapse of a predetermined period from issuance of a calibration command, irrespective of a fact that the replica buffer has not yet reached a desirable impedance level. | 04-22-2010 |
20100177589 | SEMICONDUCTOR DEVICE HAVING LATENCY COUNTER - A semiconductor device includes a latency setting circuit setting the latency, an input command circuit outputting a normal-phase (reverse-phase) command signal obtained by capturing an input command signal using a normal-phase (reverse-phase) clock, first and second counter circuits each including latch circuits sequentially shifting the normal-phase (reverse-phase) command signal based on the normal-phase (reverse-phase) clock, a selector circuit controlling a signal path so that the normal-phase (reverse-phase) command signal is transmitted through the first (second) counter circuit when an even latency is set and the normal-phase (reverse-phase) command signal is transmitted so as to be shifted from the first (second) counter circuit to the second (first) counter circuit when an odd latency is set, and a control circuit controlling so that the latch circuits of the first (second) counter circuit are activated in response to the input command signal and stopped after an operation period is elapsed. | 07-15-2010 |
20100182849 | Synchronous semiconductor device and data processing system including the same - A semiconductor device includes first, second and third terminals respectively receiving first, second and third input signals from outside, first, second and third input buffers respectively coupled to the first, second and third terminals, the first, second and third input buffers producing first, second and third buffered signals responsive to the first, second and third input signals, respectively, and first and second gate circuits respectively coupled to the first and second input buffers, the first and second gate circuits coupled to the third input buffer in common, the first and second gate circuits respectively driving output nodes thereof in response to the first and second buffered signals when the third buffered signal is activated, and each of the first and second gate circuits holding the output nodes thereof at a fixed level irrelatively to the first and second buffered signals when the third buffered signal is inactivated. | 07-22-2010 |
20100208534 | SEMICONDUCTOR MEMORY DEVICE, MEMORY MODULE INCLUDING THE SAME, AND DATA PROCESSING SYSTEM - To provide a semiconductor device including a skew detecting circuit activated in a write leveling mode, and an ODT control circuit that activates a terminating resistance circuit connected to a data strobe terminal by using an ODT signal. The ODT control circuit selects a first resistance mode when a dynamic ODT is in an unused state in the write leveling mode, and selects a second resistance mode when the dynamic ODT is in a used state in the write leveling mode. With this configuration, a resistance in a used state of the dynamic ODT and that in an unused state of the dynamic ODT can be reproduced in an actual write operation. Consequently, a more accurate write leveling operation can be performed. | 08-19-2010 |
20100302833 | Semiconductor device having nonvolatile memory element and manufacturing method thereof - To provide a semiconductor device including a pair of antifuse elements at either a high level or a low level, an OR circuit that outputs different logic information for a case that at least one of the antifuse elements is at a high level and a case that both of the antifuse elements are at a low level, and an exclusive OR circuit that outputs different logic information for a case that the logic states are different from each other and a case that they are same as each other. | 12-02-2010 |
20100302875 | SEMICONDUCTOR DEVICE HAVING NONVOLATILE MEMORY ELEMENT AND DATA PROCESSING SYSTEM INCLUDING THE SAME - A semiconductor device includes a fuse element, a read-out circuit that reads out a memory content of the fuse element in response to a first internal reset signal that is activated in response to transition of an external reset signal, and a latch circuit that holds therein the memory content read out by the read-out circuit and is reset by a second internal reset signal that is activated based on an activation period of the external reset signal. With this configuration, even when the activation period of the external reset signal is long, the time for which a current flows through the fuse element can be shortened, thereby making it possible to reduce a current consumption at the time of a reset operation. | 12-02-2010 |
20100309706 | Load reduced memory module and memory system including the same - A memory module includes a plurality of memory chips, a plurality of data register buffers, and a command/address/control register buffer mounted on a module PCB. The data register buffers perform data transfers with the memory chips. The command/address/control register buffer performs buffering of a command/address/control signal and generates a control signal. The buffered command/address/control signal is supplied to the memory chips, and the control signal is supplied to the data register buffers. According to the present invention, because line lengths between the data register buffers and the memory chips are shortened, it is possible to realize a considerably high data transfer rate. | 12-09-2010 |
20100312925 | Load reduced memory module - A memory module includes a plurality of data connectors provided along a long side of a module substrate, a plurality of memory chips and a plurality of data register buffers mounted on the module substrate, a data line that connects the data connectors and the data register buffers, and data lines that connect the data register buffers and the memory chips. Each of the data register buffers and a plurality of data connectors and a plurality of memory chips corresponding to the data register buffer are arranged side by side in a direction of a short side of the module substrate. According to the present invention, because each line length of the data lines is considerably shortened, it is possible to realize a considerably high data transfer rate. | 12-09-2010 |
20100312956 | Load reduced memory module - A memory module includes a plurality of memory chips and a plurality of data register buffers mounted on the module substrate. At least two memory chips are allocated to each of the data register buffers. Each of the data register buffers includes M input/output terminals (M is a positive integer equal to or larger than 1) that are connected to the data connectors via a first data line and N input/output terminals (N is a positive integer equal to or larger than 2M) that are connected to corresponding memory chips via second and third data lines, so that the number of the second and third data lines is N/M times the number of the first data lines. According to the present invention, because the load capacities of the second and third data lines are reduced by a considerable amount, it is possible to realize a considerably high data transfer rate. | 12-09-2010 |
20110001511 | OUTPUT CIRCUIT FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE HAVING OUTPUT CIRCUIT, AND METHOD OF ADJUSTING CHARACTERISTICS OF OUTPUT CIRCUIT - To decrease the circuit scale necessary for the calibration of the output circuit and to decrease the time required for the calibration operation. The invention includes a first output buffer and a second output buffer that are connected to a data pin, and a calibration circuit that is connected to a calibration pin. The first output buffer and the second output buffer include plural unit buffers. The unit buffers have mutually the same circuit structures. With this arrangement, the impedances of the first output buffer and the second output buffer can be set in common, based on the calibration operation using the calibration circuit. Consequently, both the circuit scale necessary for the calibration operation and the time required for the calibration operation can be decreased. | 01-06-2011 |
20110058401 | Semiconductor memory device having pad electrodes arranged in plural rows - To include a first memory cell array area and a second memory cell array area, a peripheral circuit area arranged between these memory cell array areas, a first pad row arranged between the first memory cell array area and the peripheral circuit area, and a second pad row arranged between the second memory cell array area and the peripheral circuit area. No peripheral circuit is arranged substantially between the first memory cell array area and the first pad row as well as between the second memory cell array area and the second pad row. With this arrangement, a memory cell array area and a predetermined pad can be connected within a shorter distance by using a wiring formed in an upper layer that has a lower electrical resistance, and a power potential can be stably supplied to the memory cell array area. | 03-10-2011 |
20110058402 | Semiconductor device having nonvolatile memory elements - A bit memory circuit of an antifuse element set includes two antifuse elements of which logical states are changed from an insulation state to a conductive state when a program voltage is applied. 1-bit data is represented by the logical states of the two antifuse elements. The two antifuse elements are collectively controlled by one decoder circuit. When writing data, the decoder circuit simultaneously performs insulation-breakdown on the two antifuse elements by simultaneously connecting the two antifuse elements to program voltage lines, respectively. | 03-10-2011 |
20110058442 | Semiconductor device having ODT function and data processing system including the same - To include an AL counter that outputs a second ODT signal after counting a clock signal by an additive latency after receiving a first ODT signal, and a counter control circuit that controls the AL counter such that the second ODT signal having the same logic value as a logic value of the first ODT signal at a time of shifting from an asynchronous mode to a synchronous mode is output during a period until when at least the clock signal is input by an additive latency after the shifting. With this configuration, an interruption of an CDT operation can be prevented without separately providing a CKE counter. Therefore, the circuit scale can be reduced and the power consumption can be also reduced. | 03-10-2011 |
20110058443 | LATENCY COUNTER, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, AND DATA PROCESSING SYSTEM - A latency counter includes an input selecting circuit that selects one of a plurality of signal paths and supplies an internal command to the selected signal path, a shift circuit that switches a correspondence relation between the signal paths and a latch circuit, and an output selecting circuit that causes the internal command taken in the latch circuit to be output. The input selection circuit includes a timing control circuit allocated to each of the signal paths. The timing control circuit includes an SR latch circuit that is set by the internal command and is reset in response to deactivation of a corresponding count value. Therefore, it becomes possible to suppress shortening of an active period of the internal command that is output from the input selecting circuit. | 03-10-2011 |
20110058444 | LATENCY COUNTER, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, AND DATA PROCESSING SYSTEM - A latency counter includes a counter circuit and a point-shift FIFO circuit. Latch circuits included in the point-shift FIFO circuit are divided into n groups having wired-OR outputs, and an output of a latch circuit that belongs to a group different from a current group is selected each time a count value is updated. Therefore, an output load is reduced compared to a case where outputs of all the latch circuits are bundled in a wired-OR connection. Further, because there is no need to provide a reset circuit corresponding to each wired-OR wire, it is possible to achieve a reduction in the circuit scale. Furthermore, because a waveform of a signal flowing in the wired-OR wire does not change in a state where internal commands are continuously created in n clock cycles, it is possible to achieve a reduction in the power consumption. | 03-10-2011 |
20110058445 | LATENCY COUNTER, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, AND DATA PROCESSING SYSTEM - A latency counter includes an input selecting circuit that selects one of a plurality of signal paths and supplies an internal command to the selected signal path, a shift circuit that switches a correspondence relation between the signal paths and a latch circuit, and an output selecting circuit that causes the internal command taken in the latch circuit to be output. The input selection circuit includes a timing control circuit allocated to each of the signal paths. The timing control circuit includes an SR latch circuit that is set by the internal command and is reset in response to deactivation of a corresponding count value. Therefore, it becomes possible to suppress shortening of an active period of the internal command that is output from the input selecting circuit. | 03-10-2011 |
20110062984 | Semiconductor device having plural unit buffers constituting output buffer - To include an output terminal, unit buffers, and plural output-wiring paths that respectively connect the unit buffers and the output terminal. The output wiring paths have individual output wiring sections individually allocated to corresponding unit buffers. Unit buffers corresponding to these output wiring paths are common output wiring sections shared by the output wiring paths, and are connected to the output terminal without via a common output wiring section having a higher resistance value than those of the individual output wiring sections. Accordingly, an deviation of impedance due to a parasitic resistance between the output terminal and the unit buffers is suppressed. | 03-17-2011 |
20110063925 | Semiconductor device and semiconductor package including the same - To include a plurality of pad groups each including a first data I/O pad, a first power supply pad, a second data I/O pad, and a second power supply pad arranged in order in an X direction. The first data I/O pad is connected to a first data I/O buffer, and the second data I/O pad is connected to a second data I/O buffer. The first power supply pad supplies a first power supply potential to the first and second data I/O buffers, and the second power supply pad supplies a second power supply potential to the first and second data I/O buffers. The first data I/O pad included in each of the pad groups is adjacent to the second power supply pad included in other pad group or any one of a plurality of power supply pads not included in any one of the pad groups. | 03-17-2011 |
20110066798 | Semiconductor device having calibration circuit that adjusts an impedance of output buffer and data processing system including the same - A calibration operation can be performed automatically at a semiconductor device without issuing a calibration command from a controller. Because a calibration operation is performed in response to a fact that the auto refresh command has been issued for a predetermined number of times, a periodical calibration operation can be secured and a read operation or a write operation is not requested from a controller during a calibration operation. | 03-17-2011 |
20110221513 | Semiconductor device having boosting circuit - A semiconductor device includes a boosting circuit that boosts an internal power supply voltage in a boosting range according to an external power supply voltage, an external voltage-level comparison circuit that compares the external power supply voltage and a predetermined reference voltage, and a variable resistor circuit that includes a variable resistor connected to an output terminal of the boosting circuit. The variable resistor circuit controls a resistance value of the variable resistor based on a comparison result of the external voltage-level comparison circuit. | 09-15-2011 |
20110248742 | Calibration circuit, semiconductor device including the same, and data processing system - A method includes issuing a calibration command and performing a calibration operation in response to the calibration command. The calibration operation includes adjusting an impedance of a first replica buffer with updating a first code, the first replica buffer being substantially identical in circuit configuration to one of pull-up and pull-down circuits included in an output buffer, adjusting impedance of a second replica buffer with updating a second code, the second replica buffer being substantially identical in circuit configuration to the other of the pull-up and pull-down circuits included in the output buffer, controlling a first latch circuit to hold the first code when the impedance of the first replica buffer reaches a first level, and controlling a second latch circuit to hold the second code when the impedance of the second replica buffer reaches a second level. | 10-13-2011 |
20120008437 | COUNTER CIRCUIT, LATENCY COUNTER, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, AND DATA PROCESSING SYSTEM - To provide a counter circuit capable of accurately counting a high-frequency signal in which hazard or the like is easily generated. There are provided: a frequency dividing circuit that generates first and second frequency dividing clocks, which differ in phase to each other, based on a clock signal; a first counter that counts the first frequency dividing clock; a second counter that synchronizes with the second frequency dividing clock to fetch a count value of the first counter; and a selection circuit that exclusively selects count values of the first and second counters. According to the present invention, a relation of the count values between the first and second counters is kept always constant, and thus, even when hazard occurs, the count values are only made to jump and the count values do not fluctuate. | 01-12-2012 |
20120112540 | SEMICONDUCTOR CHIP AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A semiconductor chip includes: a data output buffer that outputs a data signal; a first power-supply pad that supplies a first power-supply potential to the data output buffer; a power-supply wiring that is connected to the first power-supply pad; a strobe output buffer that outputs a strobe signal; and a second power-supply pad that supplies a second power-supply potential to the strobe output buffer. The power-supply wiring and the second power-supply pad are electrically independent of each other. Therefore, the power-supply noise associated with the switching of the data output buffer does not spread to the strobe output buffer. Thus, it is possible to improve the quality of the strobe signal. | 05-10-2012 |
20120119578 | Semiconductor device having pull-up circuit and pull-down circuit - To reduce power supply noises occurring in a control circuit unit for controlling an output buffer. A semiconductor device includes unit buffers for driving a data output terminal, impedance control circuits for controlling the unit buffers, and a control circuit unit for controlling the impedance control circuits. The impedance control circuits and the control circuit unit operate by mutually-different power supplies, the control circuit unit supplies pull-up data and pull-down data in mutually reverse phase to the impedance control circuits, and the impedance control circuits convert the pull-up data and the pull-down data from reverse phase to in-phase and supply the same to the unit buffers. Thereby, a noise is difficult to occur in a power supply VDD used for the control circuit unit. | 05-17-2012 |
20120120705 | SEMICONDUCTOR DEVICE HAVING BIT LINES AND LOCAL I/O LINES - The present invention efficiently decides line failure and contact failure in a semiconductor device. The semiconductor device has a plurality of bit line groups in which connection with local I/O lines is controlled by the same column selection signal line. A failure detecting circuit compares a first data group read from a first bit line group and a second data group read from a second bit line group to detect whether or not connection failure (contact failure) with the column selection signal line occurs in one of the first and second bit line groups. | 05-17-2012 |
20120120753 | Semiconductor device having point-shift type FIFO circuit - For example, a semiconductor device includes latch circuits, whose input nodes are connected to an input selection circuit and whose output nodes are connected to an output selection circuit; and a control circuit, which controls the input selection circuit and the output selection circuit. The control circuit includes a shift register to generate an input pointer signal and a binary counter to generate an output pointer signal. The input selection circuit selects one of the latch circuits on the basis of a value of the input pointer signal. The output selection circuit selects one of the latch circuits on the basis of a value of the output pointer signal. Therefore, it is possible to prevent a hazard from occurring in the input selection circuit, as well as to reduce the number of signal lines that transmit the output pointer signal. | 05-17-2012 |
20120120754 | Semiconductor device including latency counter - For example, a semiconductor device includes a first latency counter, which selects whether to give an odd-cycle latency to an internal command signal; and a second latency counter, which gives a latency to an internal command signal at intervals of two cycles. The latency counters are connected in series. Since the number of bits in control information, which is used to set a latency, is smaller than the types of settable latency as a result, it is possible to reduce wiring density. | 05-17-2012 |
20120126422 | SEMICONDUCTOR DEVICE HAVING PLURAL WIRING LAYERS - A semiconductor device includes a lower wiring layer, having signal lines and power supply lines extending in a Y-direction; an upper wiring layer having signal lines and power supply lines extending in an X-direction; via conductors provided in first overlap regions where corresponding signal lines overlap each other; and via conductors provided in second overlap regions where corresponding power supply lines overlap each other. The width in the X-direction of the first regions is wider than the widths in the X-direction of the second regions. Therefore, in the first regions, a plurality of via conductors can be provided. Moreover, the power supply lines are divided in the Y-direction to avoid interference with the first regions. On a plurality of lower-layer lines, two vias are placed at a minimum pitch containing one via. | 05-24-2012 |
20120134217 | SEMICONDUCTOR DEVICE HAVING PLURAL BANKS - A semiconductor device is provided with a control circuit generating a plurality of first control signals indicating timings at which column switches conduct at the time of reading and a plurality of second control signals indicating timings at which the column switches conduct at the time of writing. The control circuit activates the plurality of first control signals such that timing at which the data read from each of memory cell arrays arrives at a FIFO circuit after reception of a read instruction from outside is the same in each bank and activates the plurality of second control signals such that the column switches match a timing at which write data input from outside to a first data input/output terminal arrives at the corresponding column switch. | 05-31-2012 |
20120134222 | Semiconductor device and method of controlling the same - A semiconductor device includes a data input/output circuit connected to the memory cell array via a sense circuit, and an access control circuit that controls access to the memory cell array. The access control circuit includes: a first signal unit outputting a first signal for activating or inactivating a word line; a second signal unit outputting a second signal for activating or inactivating a bit line and the sense circuit; a third signal unit outputting a third signal for starting or stopping a supply of an overdrive voltage to the sense circuit; and a fourth signal unit outputting a fourth signal for inactivating the word line. The period during which the third signal remains activated is determined in accordance with the magnitude of an external voltage. In the fourth signal unit, the timing to generate the fourth signal is determined independently of the magnitude of the external voltage. | 05-31-2012 |
20120134227 | SEMICONDUCTOR DEVICE HAVING SENSE AMPLIFIER - For example, four driver transistors are arranged in wells so as to adjoin both sides of each of two element isolation regions. Two pairs of cross-coupled sense transistors are arranged in the wells at positions farther from the element isolation regions than the driver transistors are. Such an arrangement provides more than a certain distance between the sense transistors and the respective corresponding element isolation regions. This reduces the effect of a phenomenon that threshold of a transistor varies according to a distance from an element isolation region. As a result, it is possible to exactly match the characteristics of each pair of cross-coupled transistors. | 05-31-2012 |
20120217992 | OUTPUT CIRCUIT FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE HAVING OUTPUT CIRCUIT, AND METHOD OF ADJUSTING CHARACTERISTICS OF OUTPUT CIRCUIT - To decrease the circuit scale necessary for the calibration of the output circuit and to decrease the time required for the calibration operation. The invention includes a first output buffer and a second output buffer that are connected to a data pin, and a calibration circuit that is connected to a calibration pin. The first output buffer and the second output buffer include plural unit buffers. The unit buffers have mutually the same circuit structures. With this arrangement, the impedances of the first output buffer and the second output buffer can be set in common, based on the calibration operation using the calibration circuit. Consequently, both the circuit scale necessary for the calibration operation and the time required for the calibration operation can be decreased. | 08-30-2012 |
20130028034 | INFORMATION PROCESSING SYSTEM INCLUDING SEMICONDUCTOR DEVICE HAVING SELF-REFRESH MODE - Disclosed herein is a semiconductor device having a self-refresh mode in which a refresh operation of the storage data is performed. The semiconductor device activates an input buffer circuit that receives an impedance control command to control an impedance of the data terminal even in the self-refresh mode so that the semiconductor device can change an impedance of the data terminal during the self-refresh mode. | 01-31-2013 |
20130028037 | INFORMATION PROCESSING SYSTEM INCLUDING SEMICONDUCTOR DEVICE HAVING SELF-REFRESH MODE - Disclosed herein is a semiconductor device having first and second operation modes. In the first operation mode, the semiconductor device deactivates a DLL circuit during a self-refresh mode. In the second operation mode, the semiconductor device intermittently activates the DLL circuit to generate an internal clock signal. | 01-31-2013 |
20130028038 | INFORMATION PROCESSING SYSTEM INCLUDING SEMICONDUCTOR DEVICE HAVING SELF-REFRESH MODE - Disclosed herein is a semiconductor device having self-refresh modes in which a refresh operation of storage data is periodically performed asynchronously with an external clock signal. The semiconductor device performs the refresh operation on n memory cells in response to an auto-refresh command. The semiconductor device periodically performs the refresh operation on m memory cells included in the memory cell array during the self-refresh mode, where m is smaller than n. | 01-31-2013 |
20130031305 | INFORMATION PROCESSING SYSTEM INCLUDING SEMICONDUCTOR DEVICE HAVING SELF-REFRESH MODE - Disclosed herein is an information processing system having first and second devices. The second device alternately issues a self-refresh command and a self-refresh exit command to the first device. The first device performs a refresh operation once in response to the self-refresh command and updates a state of a DLL circuit in response to the self-refresh exit command. | 01-31-2013 |
20130140674 | SEMICONDUCTOR DEVICE - A semiconductor device according to this invention includes a first power line that supplies power to a first circuit, a second power line that supplies power to a second circuit, and a capacitive element that is provided between the first power line and the second power line. | 06-06-2013 |
20130205157 | DATA TRANSFER OPERATION COMPLETION DETECTION CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE PROVIDED THEREWITH - A data transfer operation completion detection circuit including a first counter for performing a shifting operation in response to the generation of a read initiation signal, a second counter for performing a shifting operation in response to the generation of a burst completion signal, and an SR latch circuit for generating a read enable signal in response to the burst completion signal being generated when the count value of the first counter matches the count value of the second counter. The completion of a read operation or another data transfer operation is thus detected based on a read initiation signal reception history; therefore, it is possible to detect whether all read operations are complete at a given time even if a new read command is received while a read operation or the like is in progress. | 08-08-2013 |
20130215659 | LOAD REDUCED MEMORY MODULE AND MEMORY SYSTEM INCLUDING THE SAME - A device includes a printed circuit board, a clock connector provided on the printed circuit board and configured to be supplied with a first clock signal, a first register buffer provided on the printed circuit board, coupled to the clock connector and, including a first clock generator that produces a second clock signal in response to the first clock signal, a plurality of data connectors, provided on the printed circuit board, a plurality of memory chips each provided on the printed circuit board and including a first data terminal, and a plurality of second register buffers each provided on the printed circuit board independently of the first register buffer. | 08-22-2013 |
20130278310 | DEVICE INCLUDING A CLOCK GENERATION CIRCUIT AND A METHOD OF GENERATING A CLOCK SIGNAL - A device in which a clock generation circuit is connected to a counter circuit for controlling operation timing of a DLL circuit or the like, and the counter circuit is intermittently operated by intermittently supplying a clock signal to the counter circuit from the clock generation circuit. | 10-24-2013 |
20140078852 | SEMICONDUCTOR DEVICE INCLUDING LATENCY COUNTER - For example, a semiconductor device includes a first latency counter, which selects whether to give an odd-cycle latency to an internal command signal; and a second latency counter, which gives a latency to an internal command signal at intervals of two cycles. The latency counters are connected in series. Since the number of bits in control information, which is used to set a latency, is smaller than the types of settable latency as a result, it is possible to reduce wiring density. | 03-20-2014 |
20140111271 | SEMICONDUCTOR DEVICE HAVING BOOSTING CIRCUIT - A semiconductor device includes a boosting circuit that boosts an internal power supply voltage in a boosting range according to an external power supply voltage, an external voltage-level comparison circuit that compares the external power supply voltage and a predetermined reference voltage, and a variable resistor circuit that includes a variable resistor connected to an output terminal of the boosting circuit. The variable resistor circuit controls a resistance value of the variable resistor based on a comparison result of the external voltage-level comparison circuit. | 04-24-2014 |
20140211583 | INFORMATION PROCESSING SYSTEM INCLUDING SEMICONDUCTOR DEVICE HAVING SELF-REFRESH MODE - A method for operating a dynamic random access memory device includes providing a clock signal to a clock terminal of the dynamic random access memory device, selecting one of a first operating mode and a second operating mode of the dynamic random access memory device, the first operating mode, when selected, corresponding to the DRAM periodically refreshing a first number of word lines, and the second operating mode, when selected, corresponding to the DRAM periodically refreshing a second number of word lines different from the first number, and providing a self-refresh command to a command terminal of the dynamic random access memory device. | 07-31-2014 |
20140250316 | Data Transfer Operation Completion Detection Circuit and Semiconductor Memory Device Provided Therewith - A data transfer operation completion detection circuit including a first counter for performing a shifting operation in response to the generation of a read initiation signal, a second counter for performing a shifting operation in response to the generation of a burst completion signal, and an SR latch circuit for generating a read enable signal in response to the burst completion signal being generated when the count value of the first counter matches the count value of the second counter. The completion of a read operation or another data transfer operation is thus detected based on a read initiation signal reception history; therefore, it is possible to detect whether all read operations are complete at a given time even if a new read command is received while a read operation or the like is in progress. | 09-04-2014 |
20140289461 | INFORMATION PROCESSING SYSTEM INCLUDING SEMICONDUCTOR DEVICE HAVING SELF-REFRESH MODE - Disclosed herein is an information processing system having first and second devices. The second device alternately issues a self-refresh command and a self-refresh exit command to the first device. The first device performs a refresh operation once in response to the self-refresh command and updates a state of a DLL circuit in response to the self-refresh exit command. | 09-25-2014 |
20140340976 | INFORMATION PROCESSING SYSTEM INCLUDING SEMICONDUCTOR DEVICE HAVING SELF-REFRESH MODE - A method for controlling termination impedance of a data terminal in a dynamic random access memory device includes receiving a mode register set command to set an operation mode to a first mode, setting the operation mode in a mode register to the first mode, receiving a self-refresh entry command, entering self-refresh mode, activating a first input buffer connected to a termination impedance control terminal, and receiving an impedance control signal at the first buffer, wherein the termination impedance of the data terminal is set to a first impedance value if the termination impedance control signal has a first level and the termination impedance of the data terminal is set to a second impedance value if the termination impedance control signal has a second level. | 11-20-2014 |
20150022255 | SEMICONDUCTOR DEVICE - A semiconductor device according to this invention includes a first power line that supplies power to a first circuit, a second power line that supplies power to a second circuit, and a capacitive element that is provided between the first power line and the second power line. | 01-22-2015 |
20150029776 | SEMICONDUCTOR DEVICE HAVING A REDUCED AREA AND ENHANCED YIELD - A device includes a first power supply line supplying a first voltage, first, second, and third nodes, a selection circuit connected between the first power supply line and the first node, a first anti-fuse connected between the first node and the second node, and a second anti-fuse connected between the first node and the third node. The second node and the third node are not connected to each other. | 01-29-2015 |
20150036445 | SEMICONDUCTOR DEVICE - Disclosed herein is a semiconductor device that includes: a memory cell array including a plurality of memory groups each having a plurality of memory cells, the memory groups being selected by mutually different addresses; a first control circuit periodically executing a refresh operation on the memory groups in response to a first refresh command; and a second control circuit setting a cycle of executing the refresh operation by the first control circuit. The second control circuit sets the cycle to a first cycle until executing the refresh operation to all the memory groups after receiving the first refresh command, and the second control circuit sets the cycle to a second cycle that is longer than the first cycle after executing the refresh operation to all the memory groups. | 02-05-2015 |
20150043299 | SEMICONDUCTOR DEVICE - A device includes an output circuit, a DLL (Delay Locked Loop) circuit including a first delay line receiving a first clock signal and outputting, in response to receiving the clock signal, a second clock signal supplied to the output circuit, and an ODT (On Die Termination) circuit receiving an ODT activation signal and outputting, in response to receiving the ODT activation signal, an ODT output signal supplied to the output circuit to set the output circuit in a resistance termination state, and the ODT circuit including a second delay line configured to be set by the DLL circuit in an equivalent delay amount that is equivalent to a delay amount of the first delay line, the ODT output signal being, in a first time-period during which the ODT activation signal is in an active state, generated by being conveyed via the second delay line in which the equivalent delay amount has been set. | 02-12-2015 |