Hiraishi, JP
Akira Hiraishi, Toyohashi-Shi JP
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20140315046 | MICROBIAL POWER GENERATION DEVICE, ELECTRODE FOR MICROBIAL POWER GENERATION DEVICE, AND METHOD FOR PRODUCING SAME - Provided are a microbial power generation device, an electrode for the microbial power generation device, preparing methods of the same, an electric power producing method using microbes and a selective culture method of the microbes used for the electric power producing method capable of improving electric power production capacity and of suppressing power generation cost. In a microbial power generation device ( | 10-23-2014 |
Atsushi Hiraishi, Sagamihara-Shi JP
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20150098289 | SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of memory cells, an access circuit configured to perform a data read operation, a data write operation and a data refresh operation on the memory cells, the access circuit to operate in a selected one of a first mode that is ready to perform and a second mode that is not ready to perform, and a judgment circuit configured to respond to first command information, to cause, when the access circuit is in the first mode, the access circuit to perform the data refresh operation, and to cause, when the access circuit is in the second mode, the access circuit to exit from the second mode and then to perform the refresh operation. | 04-09-2015 |
Atsushi Hiraishi, Chuo-Ku JP
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20090303768 | MEMORY MODULE, METHOD FOR USING SAME AND MEMORY SYSTEM - In a multi-rank memory module having a terminal resistance of a data input/output pad | 12-10-2009 |
Atsushi Hiraishi, Wakayama JP
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20110263752 | AQUEOUS INK FOR INKJET RECORDING - The present invention provides [1] a water dispersion for ink-jet printing containing chain-like particles each containing anionic organic pigment particles and a cationic polymer, wherein the ratio of organic pigment primary particles forming the chain-like particles to all the pigment primary particles contained in the water dispersion is 10% by number or more; [2] a water-based ink for ink-jet printing containing the water dispersion; [3] a method for producing a water dispersion for ink-jet printing as described above in [1]; and [4] a water-based ink for ink-jet printing containing a water dispersion produced through the method. The water dispersion and water-based ink for ink-jet printing of the present invention realize excellent optical density. | 10-27-2011 |
20110306708 | WATER-BASED INK FOR INK-JET PRINTING - The present invention is directed to a water dispersion for ink-jet printing which realizes sufficient optical density and exhibits excellent filterability and storage stability; a water-based ink containing the water dispersion; and a process for producing the water dispersion or the water-based ink. The invention includes the following: (1) a water dispersion for ink-jet printing containing anionic colorant particles and cationic polymer particles, and a water-based ink for ink-jet printing containing the water dispersion; (2) a process for producing a water dispersion for ink-jet printing including a step of mixing a water dispersion of anionic colorant particles with a water dispersion of cationic polymer particles, to thereby produce a water dispersion of composite particles formed of the cationic polymer particles and the anionic colorant particles adhering thereto, and a water dispersion produced through the production process; and (3) a process for producing a water-based ink for ink- jet printing including step (A) of mixing a water dispersion of cationic polymer particles with a water- soluble organic solvent, or dispersing a cationic polymer in water and a water-soluble organic solvent, to thereby produce a dispersion containing the cationic polymer particles, water, and the water-soluble organic solvent; and step (B) of mixing the produced dispersion with a dispersion containing anionic colorant particles and water. | 12-15-2011 |
Ayumi Hiraishi, Ibaraki JP
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20090174175 | Pad for Absorbing Impact on Leg Portions and Floor Spacer for Vehicle - A pad for absorbing an impact on leg portions excellent in impact absorbing performance at a time of collision of a vehicle and the like, and a floor spacer for a vehicle are provided. A pad | 07-09-2009 |
20090174224 | Floor Spacer for Vehicle and Vehicle Interior Structure - A floor spacer for a vehicle capable of effectively preventing a relative displacement of a floor carpet to the floor spacer while ensuring the easiness of removing the floor carpet without increasing manufacturing cost, and a vehicle interior structure are provided. A floor spacer | 07-09-2009 |
20100060038 | Floor Spacer For Vehicle - A floor spacer for a vehicle constituted of an expanded resin molded article which can simultaneously satisfy sound absorbing performance while satisfying desired compression strength and reduction in weight is provided. A floor spacer A for a vehicle is constituted of a floor spacer main body | 03-11-2010 |
Hiroyuki Hiraishi, Yokohama-Shi JP
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20100250256 | CHARACTER MOUTH SHAPE CONTROL METHOD | 09-30-2010 |
20110014982 | POSITION DETECTION SYSTEM, POSITION DETECTION METHOD, INFORMATION STORAGE MEDIUM, AND IMAGE GENERATION DEVICE - A position detection system includes an image acquisition section that acquires an image from an imaging device when the imaging device has acquired an image of an imaging area corresponding to a pointing position from a display image generated by embedding a marker image as a position detection pattern in an original image, and a position detection section that performs a calculation process that detects the marker image embedded in the acquired image based on the acquired image to determine the pointing position corresponding to the imaging area. | 01-20-2011 |
20110082573 | INFORMATION STORAGE MEDIUM AND INFORMATION PROCESSING SYSTEM - An information processing system includes a storage section that stores a plurality of templates respectively corresponding to a plurality of preset sounds, an acquisition section that acquires external sound data corresponding to an external sound detected by a sound detection section, a determination section that compares the external sound data with each of the plurality of templates, and determines the type of preset sound corresponding to the external sound, and an execution section that executes a process corresponding to the determined type of preset sound. | 04-07-2011 |
Ikuo Hiraishi, Kawasaki JP
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20080204300 | AD CONVERTER CIRCUIT AND MICROCONTROLLER - A successive approximation type AD converter circuit for comparing an analog input signal with an output analog signal of a DA converter with a comparator to input a digital signal output in accordance with a comparison result to the DA converter to determine a digital signal obtained if the output analog signal of the DA converter is equal to the analog input signal, as an AD-converted output signal, includes: an AD converter for AD-converting the analog input circuit in accordance with a sampling period for sampling the analog input signal and a comparison period for comparing the sampled analog input signal with the output analog signal of the DA converter with the comparator; and setting means for independently setting a cycle time of a first clock signal for determining the sampling period and a cycle time of a second clock signal for determining the comparison period. | 08-28-2008 |
Iwao Hiraishi, Saitama JP
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20130043659 | PISTON RING - Provided is a piston ring such that it is possible to sufficiently inhibit adhesive wear when the piston ring is mounted to a piston for a diesel engine in which at least the piston ring groove in the piston is formed from steel or cast iron. Disclosed is a piston ring mounted to a piston for a diesel engine, wherein the load length ratio (Rmr2) (in accordance with JIS B0601:2001) of the top surface and bottom surface of the piston ring satisfies each of the following conditions: Rmr2 (0.5%, 0.3[mu]m)=20% and Rmr2 (0.5%, 0.4[mu]m)=40%. | 02-21-2013 |
20130181410 | INTERNAL COMBUSTION ENGINE OIL RING - A high-quality internal combustion engine oil ring which stably keeps oil consumption low for a long period and in which the shapes of an upper rail and a lower rail can be formed at low cost with high accuracy. The internal combustion engine oil ring has a recessed stepped portion formed at a corner of a sliding surface of an outer peripheral sliding projection in sliding contact with a cylinder inner wall surface of at least one of a first rail and a second rail constituting an oil ring main body, in a shape in vertical cross-section along a sliding direction of the first rail and second rail, and a wall surface of the recessed stepped portion has an arcuate surface having a radius of curvature of 0.02 mm to 0.08 mm. | 07-18-2013 |
Iwao Hiraishi, Saitama-Shi JP
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20120205876 | PISTON RING - A piston ring is provided at its outer periphery with a sliding surface, wherein in a cross section thereof which is perpendicular to a radial direction of the piston ring, the sliding surface includes a first sliding surface which occupies a predetermined region from one end thereof, and a second sliding surface which occupies a region extending from one end to the other end of the first sliding surface, the first sliding surface is formed of hard film, the second sliding surface is not formed of hard film, and the second sliding surface exists at a position deviated inward from a phantom line extending from the first sliding surface toward the other end. | 08-16-2012 |
20120261886 | MULTI-PIECE OIL RING - A multi-piece oil ring includes an oil ring main member in which two rails are connected together by a columnar part and which has a roughly I-shaped cross section; and a coil expander disposed in an inner circumferential groove formed on the inner circumferential surface of the columnar. Each rail in the oil ring main member possesses a sliding section protuberance whose tip possesses a jutting portion. The axial length of the jutting portion is 0.02-0.18 mm. The change rate of the axial length of the individual jutting portion is in the range of 0 to 80% at least in a region of from its sliding surface to be faced to a cylinder, which is positioned at the tip of the jutting portion, to a position of 0.03 mm away from the aforementioned sliding surface in the radial direction of the oil ring main member. | 10-18-2012 |
Junko Hiraishi, Kawasaki-Shi JP
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20130091426 | DATA PROCESSING APPARATUS, INPUT SUPPORTING METHOD, AND PROGRAM - To present information that is likely to be input by a user as an input candidate in a case of supporting user input. | 04-11-2013 |
Kanae Hiraishi, Ibaraki JP
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20130157190 | CHARGE CONTROL AGENT AND TONER USING THE SAME | 06-20-2013 |
20140004459 | TONER FOR DEVELOPING ELECTROSTATIC CHARGE IMAGE | 01-02-2014 |
Kanae Hiraishi, Koriyama-Shi JP
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20120141931 | Polymerized Toner Comprising Cyclic Phenol Sulfide - A negatively charged polymerized toner having high charging performance, which comprises a charge control agent particularly useful for color toners and polymerized toners, the charge control agent comprising a cyclic phenol sulfide as an active ingredient, which speeds up charging risetime, has a high charge amount and charging characteristics particularly excellent in environmental stability, and is safe since it does not have any problem with the waste regulations. | 06-07-2012 |
Kanae Hiraishi, Tsukuba-Shi JP
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20120315576 | CHARGE CONTROLLING AGENT AND TONER USING SAME - The present invention provides a charge control agent containing, as an active substance(s), one or two or more rhodanine compounds represented by the following formula (1). | 12-13-2012 |
20130177843 | CHARGE CONTROL AGENT AND TONER USING SAME - The present invention provides a charge control agent containing, as an active substance(s), one or two or more thiazolidinedione derivatives represented by the following formula (1), | 07-11-2013 |
20130177844 | CHARGE CONTROL AGENT AND TONER USING SAME - The present invention provides a positive-charge control agent containing, as an active substance(s), one or two or more rhodanine compounds represented by the following formula (1). | 07-11-2013 |
Masakazu Hiraishi, Kyoto JP
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20130334727 | INJECTION MOLDING METHOD AND INJECTION MOLD ASSEMBLY - An injection molding method in which a multilayer film including a base layer and a transfer layer stacked on the base layer is disposed in the molding space of an injection mold, the molding space containing the multiplayer film is filled with resin, and then the injection mold is opened to obtain a molded article transferred with the transfer layer peeled from the base layer, wherein after the resin is injected into the molding space, a cooling circuit near the molding space cools the multilayer film before the injection mold is opened. | 12-19-2013 |
20140197570 | INJECTION MOLDING METHOD AND INJECTION MOLDING MACHINE - After a first die and a second die are opened, a base film of a film is separated from the first die so as to tilt the surface of the film with respect to a parting face of the first die. | 07-17-2014 |
20140239550 | IN-MOLD DECORATION MOLDING METHOD AND IN-MOLD DECORATION MOLDING MACHINE - The surfaces of a decorated sheet are tilted with respect to a parting face before a movement of a clamping member. When the clamping member moves to press the decorated sheet under tension to the parting face, a part of the clamping member first comes into contact with the decorated sheet at a position determined by inclination of the surfaces of the decorated sheet and then another portion of the clamping member comes into contact with the decorated sheet. | 08-28-2014 |
Masanori Hiraishi, Hyogo JP
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20100195313 | LIGHT-DIFFUSING FILM AND APPARATUS PROVIDED WITH THE SAME - A light-diffusing film comprises a light-diffusing layer (e.g., an anisotropic light-diffusing layer), and the light-diffusing layer comprises a continuous phase comprising a polycarbonate-series resin (a polycarbonate-series resin having a number average molecular weight of 15000 to 25000) and a dispersed phase comprising a polypropylene-series resin (a metallocene-catalyzed polypropylene-series random copolymer). A transparent layer may be laminated on at least one side of the light-diffusing layer. The light-diffusing layer may substantially be free from a compatibilizing agent. In spite of a use of the polycarbonate-series resin, the dispersed phase can uniformly be formed. Therefore, the film is suitable for a member of a plane light source device or a display apparatus. The light-diffusing film inhibits a change in a light-diffusing characteristic even under a high temperature. | 08-05-2010 |
Masanori Hiraishi, Himeji-Shi JP
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20080310171 | Optical sheet - An optical sheet comprises a continuous phase comprising a transparent material and a dispersed phase dispersed in the continuous phase, and has a first surface and a second surface. At least one of the first surface and the second surface forms a prismatic surface of a prism portion constituting portion of the sheet, and the prism portion has a plurality of prism units, each having a triangular cross-section, formed regularly in a longitudinal and/or width direction of the sheet. | 12-18-2008 |
Naoko Hiraishi, Aichi JP
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20090269582 | PROCESS FOR PRODUCING CORE/SHEATH CONJUGATE ELASTOMER FIBER - The present invention provides a process for producing a conjugate fiber that is excellent in strength, stretch elasticity, and transparency. The process includes a step (1) in which an elastomer resin (A) having stretching elasticity and an elastomer resin (B) having stretch elasticity, a permanent elongation of 25-70%, and a tensile elongation of 100-800% are separately melted and subjected to conjugate spinning using a conjugate spinneret having two nozzles so that the elastomer resin (A) forms a core and the elastomer resin (B) form a sheath; a step (2) in which the fiber obtained by composite spinning in the step (1) is heat-treated; and a step (3) in which the fiber heat-treated in the step (2) is stretched. | 10-29-2009 |
Ryuta Hiraishi, Nagoya-Shi JP
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20130203738 | USE OF COMPOUND BINDING TO MSIN3B THAT SPECIFICALLY BINDS TO NEURON RESTRICTIVE SILENCER FACTOR (NRSF) - The present invention identifies a compound which binds to the PAH1 domain of mSin3B that specifically binds to neural restrictive silencer factor NRSF, and uses the compound as a prophylactic and/or a therapeutic for diseases associated with abnormal expression of neural restrictive silencer factor NRSF/REST or abnormal expression of genes targeted by NRSF/REST, such as Huntington's disease, medulloblastoma and neuropathic pain. | 08-08-2013 |
Suzunosuke Hiraishi, Tochigi JP
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20120241735 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film. | 09-27-2012 |
20130126868 | SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR ELEMENT - In a semiconductor element including an oxide semiconductor film as an active layer, stable electrical characteristics are achieved. A semiconductor element includes a base film which is an oxide film at least a surface of which has crystallinity; an oxide semiconductor film having crystallinity over the base film; a gate insulating film over the oxide semiconductor film; a gate electrode overlapping with at least the oxide semiconductor film, over the gate insulating film; and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. The base film is a film containing indium and zinc. With the structure, a state of crystals in the oxide semiconductor film reflects that in the base film; thus, the oxide semiconductor film can have crystallinity in a large region in the thickness direction. Accordingly, the electrical characteristics of the semiconductor element including the film can be made stable. | 05-23-2013 |
20130228775 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING OXIDE FILM - One embodiment of the present invention is a semiconductor device at least including an oxide semiconductor film, a gate insulating film in contact with the oxide semiconductor film, and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film therebetween. The oxide semiconductor film has a spin density lower than 9.3×10 | 09-05-2013 |
20140175438 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film. | 06-26-2014 |
20140206133 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To reduce defects in an oxide semiconductor film in a semiconductor device. To improve electrical characteristics of and reliability in the semiconductor device including an oxide semiconductor film. A method for manufacturing a semiconductor device includes the steps of forming a gate electrode and a gate insulating film over a substrate, forming an oxide semiconductor film over the gate insulating film, forming a pair of electrodes over the oxide semiconductor film, forming a first oxide insulating film over the oxide semiconductor film and the pair of electrodes by a plasma CVD method in which a film formation temperature is 280° C. or higher and 400° C. or lower, forming a second oxide insulating film over the first oxide insulating film, and performing heat treatment at a temperature of 150° C. to 400° C. inclusive, preferably 300° C. to 400° C. inclusive, further preferably 320° C. to 370° C. inclusive. | 07-24-2014 |
20140374755 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film. | 12-25-2014 |
20150102341 | SEMICONDUCTOR DEVICE - To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment. | 04-16-2015 |
Suzunosuke Hiraishi, Atsugi JP
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20110084269 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - An object is to reduce contact resistance between an oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer in a thin film transistor including the oxide semiconductor layer. The source and drain electrode layers have a stacked structure of two or more layers. In this stack of layers, a layer in contact with the oxide semiconductor layer is a thin indium layer or a thin indium-alloy layer. Note that the oxide semiconductor layer contains indium. A second layer or second and any of subsequent layers in the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like. | 04-14-2011 |
20110108833 | SEMICONDUCTOR DEVICE - An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using a metal whose work function is lower than the work function of the oxide semiconductor layer or an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like. | 05-12-2011 |
20110108834 | SEMICONDUCTOR DEVICE - An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using an oxide of a metal whose work function is lower than the work function of the oxide semiconductor layer or an oxide of an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like. | 05-12-2011 |
20110127524 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source electrode, a drain electrode, a gate wiring, a source wiring, and a drain wiring. The extremely low off current of the transistor with the oxide semiconductor layer contributes to reduction in power consumption of the semiconductor device. Additionally, the use of the copper metal allows the combination of the semiconductor device with a display element to provide a display device with high display quality and negligible defects, which results from the low electrical resistance of the wirings and electrodes formed with the copper metal. | 06-02-2011 |
20110227082 | SEMICONDUCTOR DEVICE - An oxide semiconductor layer in which “safe” traps exist exhibits two kinds of modes in photoresponse characteristics. By using the oxide semiconductor layer, a transistor in which light deterioration is suppressed to the minimum and the electric characteristics are stable can be achieved. The oxide semiconductor layer exhibiting two kinds of modes in photoresponse characteristics has a photoelectric current value of 1 pA to 10 nA inclusive. When the average time τ | 09-22-2011 |
20110287591 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability. In a manufacturing process of a bottom-gate transistor including an oxide semiconductor layer, heat treatment in an atmosphere containing oxygen and heat treatment in vacuum are sequentially performed for dehydration or dehydrogenation of the oxide semiconductor layer. In addition, irradiation with light having a short wavelength is performed concurrently with the heat treatment, whereby elimination of hydrogen, OH, or the like is promoted. A transistor including an oxide semiconductor layer on which dehydration or dehydrogenation treatment is performed through such heat treatment has improved stability, so that variation in electrical characteristics of the transistor due to light irradiation or a bias-temperature stress (BT) test is suppressed. | 11-24-2011 |
20110315979 | TRANSISTOR AND SEMICONDUCTOR DEVICE - Manufactured is a transistor including an oxide semiconductor layer, a source electrode layer and a drain electrode layer overlapping with part of the oxide semiconductor layer, a gate insulating layer overlapping with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode overlapping with part of the oxide semiconductor layer with the gate insulating layer provided therebetween, wherein, after the oxide semiconductor layer which is to be a channel formation region is irradiated with light and the light irradiation is stopped, a relaxation time of carriers in photoresponse characteristics of the oxide semiconductor layer has at least two kinds of modes: τ | 12-29-2011 |
20130248854 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source electrode, a drain electrode, a gate wiring, a source wiring, and a drain wiring. The extremely low off current of the transistor with the oxide semiconductor layer contributes to reduction in power consumption of the semiconductor device. Additionally, the use of the copper metal allows the combination of the semiconductor device with a display element to provide a display device with high display quality and negligible defects, which results from the low electrical resistance of the wirings and electrodes formed with the copper metal. | 09-26-2013 |
20140319519 | SEMICONDUCTOR DEVICE - An oxide semiconductor layer in which “safe” traps exist exhibits two kinds of modes in photoresponse characteristics. By using the oxide semiconductor layer, a transistor in which light deterioration is suppressed to the minimum and the electric characteristics are stable can be achieved. The oxide semiconductor layer exhibiting two kinds of modes in photoresponse characteristics has a photoelectric current value of 1 pA to 10 nA inclusive. When the average time τ | 10-30-2014 |
20150050775 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability. In a manufacturing process of a bottom-gate transistor including an oxide semiconductor layer, heat treatment in an atmosphere containing oxygen and heat treatment in vacuum are sequentially performed for dehydration or dehydrogenation of the oxide semiconductor layer. In addition, irradiation with light having a short wavelength is performed concurrently with the heat treatment, whereby elimination of hydrogen, OH, or the like is promoted. A transistor including an oxide semiconductor layer on which dehydration or dehydrogenation treatment is performed through such heat treatment has improved stability, so that variation in electrical characteristics of the transistor due to light irradiation or a bias-temperature stress (BT) test is suppressed. | 02-19-2015 |
20150069393 | TRANSISTOR AND SEMICONDUCTOR DEVICE - Manufactured is a transistor including an oxide semiconductor layer, a source electrode layer and a drain electrode layer overlapping with part of the oxide semiconductor layer, a gate insulating layer overlapping with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode overlapping with part of the oxide semiconductor layer with the gate insulating layer provided therebetween, wherein, after the oxide semiconductor layer which is to be a channel formation region is irradiated with light and the light irradiation is stopped, a relaxation time of carriers in photoresponse characteristics of the oxide semiconductor layer has at least two kinds of modes: τ | 03-12-2015 |
20150093853 | SEMICONDUCTOR DEVICE - An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using a metal whose work function is lower than the work function of the oxide semiconductor layer or an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like. | 04-02-2015 |
Takayuki Hiraishi, Nagano JP
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20120186961 | INFORMATION PROCESSING APPARATUS AND OPERATION INPUT DEVICE - An information processing apparatus includes a keyboard having a plurality of keys. The keyboard includes a sheet having a plurality of switch units for switching a non-conductive state and a conductive state according to operation with which the plurality of keys are respectively pressed down, the sheet having a first opening portion at a position corresponding to at least one of the keys, and a light emitting member provided below the sheet to emit light toward the key, the light emitting member having a second opening portion at a position corresponding to at least one of the keys. | 07-26-2012 |
Takayuki Hiraishi, Himeji-Shi JP
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20150115794 | DOUBLE-CAPPED SHORT ARC FLASH LAMP - A double-capped short arc flash lamp includes an arc tube, a pair of main electrodes disposed in the arc tube, and a pair of auxiliary electrodes disposed in the arc tube. The flash lamp also includes inner leads and outer leads associated with the two auxiliary electrodes, respectively. The flash lamp also includes a first sealing tube and a second sealing tube provided at opposite ends of the arc tube. A sealing glass tube is partly received in the second sealing tube. Grooves are formed in the outer surface of the sealing glass tube in a region where the sealing glass tube overlaps the second sealing tube. The grooves extend in the axial direction of the sealing glass tube, and are configured to receive the inner leads and the outer leads. Metallic foils electrically connect the inner leads with the outer leads, respectively. | 04-30-2015 |
20150249003 | SHORT ARC FLASH LAMP AND LIGHT SOURCE DEVICE - Disclosed herein are a short arc type flash lamp having high lamp starting performance and capable of reducing the diameter of its seal tube part, and a light source device thereof. The flash lamp has an electrode shaft of one of the main electrodes, and an electrode shaft of the other of the main electrodes and leads for starting auxiliary electrodes which are respectively led out from the second seal tube part, and an external trigger is disposed in a state in which it extends in the circumferential direction on the outer peripheral surface of one end side region of the second seal tube part. The light source device is structured by a concave reflection mirror disposed on the second seal tube part side of the flash lamp in a state in which a focal point of the concave reflection mirror coincides with a luminous point of the flash lamp. | 09-03-2015 |
Takumi Hiraishi, Yokkaichi-City JP
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20100035482 | TERMINAL FITTING - A terminal fitting ( | 02-11-2010 |
20120034805 | CONNECTOR - A housing ( | 02-09-2012 |
20120252280 | CONNECTOR - Two partial locks ( | 10-04-2012 |
20120309219 | CONNECTOR - A retainer ( | 12-06-2012 |
Tatsuya Hiraishi, Kawasaki JP
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20080304642 | PHONE COMMUNICATION CONTROLLING METHOD - According to an aspect of the embodiment provides a communication terminal for communicating in a network. The terminal receives from another communication terminal a request includes an obscured call information for obscuring an identification information. The communication terminal obscures the identification information after receiving the request. | 12-11-2008 |
20120081210 | PORTABLE ELECTRONIC DEVICE AND RECORDING MEDIUM - A portable electronic device having a power supply unit and an IC chip that conducts wireless communication with a reader/writer and operates when power is supplied from the power supply unit includes a first determining unit that determines whether or not the portable electronic device, in a state in which the IC chip is operating moved, according to a result of detection by a sensor to detect movement, a second determining unit that determines whether or not a signal from an opposing device equipped with the reader/writer was received, and a power control unit that conducts control to allow a state in which power is supplied to the IC chip from the power supply unit when the first determining unit determines that the portable electronic device did not move and the second determining unit determines that the signal was received. | 04-05-2012 |
Toshio Hiraishi, Hitachinaka JP
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20150291041 | Power Supply Device - A power supply device that converts inputted direct-current power to direct-current power with a predetermined voltage to supply the power to the outside includes a voltage conversion circuit that converts the voltage of the inputted direct-current power, a voltage measurement circuit that measures a voltage value indicating a voltage potential difference between a ground voltage potential in the power supply device and a ground point provided outside the power supply device and connected to the ground voltage potential via a ground strap cable, a current measurement circuit that measures a current value of a load current flowing when de direct-current power is supplied from the power supply device, and an arithmetic circuit that calculates a resistance value corresponding ground connection of the power supply device, based on the voltage value measured by the voltage measurement circuit and the current value measured by the current measurement circuit. | 10-15-2015 |
Yasuhiro Hiraishi, Osaka-Shi JP
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20130261156 | PHARMACEUTICAL COMPOSITION - The present invention provides a pharmaceutical composition or a solid preparation containing a stabilized pharmaceutically active ingredient and a stabilizing method thereof. | 10-03-2013 |
Yoshinobu Hiraishi, Kanagawa JP
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20080311019 | Apparatus for pulling single crystal by CZ method - In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method. | 12-18-2008 |
20080311021 | Apparatus for pulling single crystal by CZ method - In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method. | 12-18-2008 |
Yoshinobu Hiraishi, Hiratsuka-Shi JP
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20090173272 | Apparatus for pulling single crystal by CZ method - In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method. | 07-09-2009 |
Yoshitaka Hiraishi, Kyoto JP
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20090290998 | ROTOR YOKE AND BALANCE ADJUSTING METHOD THEREOF - A rotor yoke includes a substantially flat or annular flat cover portion coaxial or substantially coaxial with a rotational axis and a substantially cylindrical side wall portion extending from an outer circumference of the cover portion in a parallel or substantially parallel relationship with the rotational axis. The rotor yoke further includes a substantially annular flange portion extending radially outwards from an open end of the side wall portion. The cover portion and the side wall portion define a cup portion whose center of gravity deviates from the rotational axis in a plane perpendicular or substantially perpendicular to the rotational axis, and the flange portion has an outer circumferential circle whose center deviates from the rotational axis in a direction opposite to the deviation direction of the center of gravity of the cup portion. | 11-26-2009 |
Yukihiro Hiraishi, Hyogo JP
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20090178839 | RECOGNITION MARK AND METHOD FOR MANUFACTURING CIRCUIT BOARD - Through hole ( | 07-16-2009 |
20090229762 | MANUFACTURING METHOD OF BOARDS, MOLD-RELEASING SHEET, MANUFACTURING APPARATUS FOR BOARD - A highly reliable and productive manufacturing method of boards and a manufacturing apparatus are provided. The manufacturing apparatus includes heater-punches ( | 09-17-2009 |
Yusuke Hiraishi, Osaka JP
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20120034376 | APPARATUS AND METHOD FOR APPLYING A LUBRICANT TO A THREADED PORTION OF A STEEL PIPE - An apparatus which can thinly and uniformly apply a highly viscous lubricant on the threaded portion of a threaded joint for pipes comprises a steel pipe support unit which supports a steel pipe P having a pin while rotating the pipe, a lubricant circulation system in which a lubricant having its viscosity adjusted so as to be sprayable is circulated, a metering unit having a metering pump capable of metering the lubricant, a lubricant spraying unit having spray guns for spraying lubricant through nozzles toward the pin, a spray gun support unit which supports the spray guns so as to be movable in the axial and/or radial directions of the steel pipe P; and a controlling unit which controls the rotational speed of the steel pipe P by the steel pipe support unit and the speeds of movement of the spray guns by the spray gun support unit. | 02-09-2012 |
Yuuki Hiraishi, Shizuoka JP
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20090058134 | FRONT PART STRUCTURE OF VEHICLE BODY - A front part structure of a vehicle body is provided. A suspension frame disposed posterior to a front-side component in a longitudinal direction of the vehicle. An apron side member extends in the longitudinal direction. An apron lower member extends in the longitudinal direction, connects the front-side component and the suspension frame and is disposed below the apron side member. A first shock absorbing portion is provided in a front end portion of the apron side member. A second shock absorbing portion is provided in a front end portion of the apron lower member such that the second shock absorbing portion is disposed below the first shock absorbing portion. | 03-05-2009 |