Patent application number | Description | Published |
20140103284 | ReRAM Cells Including TaXSiYN Embedded Resistors - Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and a resistive switching layer connected in series with this resistor. The resistor is configured to prevent over-programming of the cell by limiting electrical currents through the resistive switching layer. Unlike the resistive switching layer, which changes its resistance in order to store data, the embedded resistor maintains a substantially constant resistance during operation of the cell. The embedded resistor is formed from tantalum nitride and silicon nitride. The atomic ratio of tantalum and silicon may be specifically selected to yield resistors with desired densities and resistivities as well as ability to remain amorphous when subjected to various annealing conditions. The embedded resistor may also function as a diffusion barrier layer and prevent migration of components between one of the electrodes and the resistive switching layer. | 04-17-2014 |
20140154859 | Methods and Vehicles for High Productivity Combinatorial Testing of Materials for Resistive Random Access Memory Cells - Provided are methods for processing different materials on the same substrate for high throughput screening of multiple ReRAM materials. A substrate may be divided into multiple site isolated regions, each region including one or more base structures operable as bottom electrodes of ReRAM cells. Different test samples may be formed over these base structures in a combinatorial manner. Specifically, each site isolated region may receive a test sample that has a different characteristic than at least one other sample provided in another region. The test samples may have different compositions and/or thicknesses or be deposited using different techniques. These different samples are then etched in the same operation to form portions of the samples. Each portion is substantially larger than the corresponding base structure and fully covers this base structure to protect the interface between the base structure and the portion during etching. | 06-05-2014 |
20140166956 | Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer - A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and lifetime by custom tailoring the average concentration of defects in the resistive switching film and methods of forming the same. The nonvolatile memory element includes a first electrode layer, a second electrode layer, and a resistive switching layer disposed between the first electrode layer and the second electrode layer. The resistive switching layer comprises a first sub-layer and a second sub-layer, wherein the first sub-layer has more defects than the first sub-layer. A method includes forming a first sub-layer on the first electrode layer by a first ALD process and forming a second sub-layer on the first sub-layer by a second ALD process, where the first sub-layer has a different amount of defects than the second sub-layer. | 06-19-2014 |
20140175360 | Bilayered Oxide Structures for ReRAM Cells - Provided are resistive random access memory (ReRAM) cells having bi-layered metal oxide structures. The layers of a bi-layered structure may have different compositions and thicknesses. Specifically, one layer may be thinner than the other layer, sometimes as much as 5 to 20 times thinner. The thinner layer may be less than 30 Angstroms thick or even less than 10 Angstroms thick. The thinner layer is generally more oxygen rich than the thicker layer. Oxygen deficiency of the thinner layer may be less than 5 atomic percent or even less than 2 atomic percent. In some embodiments, a highest oxidation state metal oxide may be used to form a thinner layer. The thinner layer typically directly interfaces with one of the electrodes, such as an electrode made from doped polysilicon. Combining these specifically configured layers into the bi-layered structure allows improving forming and operating characteristics of ReRAM cells. | 06-26-2014 |
20140175361 | Resistive Switching Layers Including Hf-Al-O - Provided are resistive random access memory (ReRAM) cells having switching layers that include hafnium, aluminum, oxygen, and nitrogen. The composition of such layers is designed to achieve desirable performance characteristics, such as low current leakage as well as low and consistent switching currents. In some embodiments, the concentration of nitrogen in a switching layer is between about 1 and 20 atomic percent or, more specifically, between about 2 and 5 atomic percent. Addition of nitrogen helps to control concentration and distribution of defects in the switching layer. Also, nitrogen as well as a combination of two metals helps with maintaining this layer in an amorphous state. Excessive amounts of nitrogen reduce defects in the layer such that switching characteristics may be completely lost. The switching layer may be deposited using various techniques, such as sputtering or atomic layer deposition (ALD). | 06-26-2014 |
20140264223 | Metal Aluminum Nitride Embedded Resistors for Resistive Random Memory Access Cells - Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions. | 09-18-2014 |
20140322884 | Nonvolatile resistive memory element with a silicon-based switching layer - A nonvolatile resistive memory element includes a novel switching layer and methods of forming the same. The switching layer includes a material having bistable resistance properties and formed by bonding silicon to oxygen or nitrogen. The switching layer may include at least one of SiO | 10-30-2014 |
20140357046 | ReRAM Cells Including TaXSiYN Embedded Resistors - Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and a resistive switching layer connected in series with this resistor. The resistor is configured to prevent over-programming of the cell by limiting electrical currents through the resistive switching layer. Unlike the resistive switching layer, which changes its resistance in order to store data, the embedded resistor maintains a substantially constant resistance during operation of the cell. The embedded resistor is formed from tantalum nitride and silicon nitride. The atomic ratio of tantalum and silicon may be specifically selected to yield resistors with desired densities and resistivities as well as ability to remain amorphous when subjected to various annealing conditions. The embedded resistor may also function as a diffusion barrier layer and prevent migration of components between one of the electrodes and the resistive switching layer. | 12-04-2014 |
20140363920 | Atomic Layer Deposition of Metal Oxides for Memory Applications - Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack which contains at least one hard metal oxide film (e.g., metal is completely oxidized or substantially oxidized) and at least one soft metal oxide film (e.g., metal is less oxidized than hard metal oxide). The soft metal oxide film is less electrically resistive than the hard metal oxide film since the soft metal oxide film is less oxidized or more metallic than the hard metal oxide film. In one example, the hard metal oxide film is formed by an ALD process utilizing ozone as the oxidizing agent while the soft metal oxide film is formed by another ALD process utilizing water vapor as the oxidizing agent. | 12-11-2014 |
20140377931 | Metal Aluminum Nitride Embedded Resistors for Resistive Random Memory Access Cells - Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions. | 12-25-2014 |
20150060753 | CONTROLLING COMPOSITION OF MULTIPLE OXIDES IN RESISTIVE SWITCHING LAYERS USING ATOMIC LAYER DEPOSITION - A method of fabricating a resistive random access memory (ReRAM) cell may include forming a set of nanolaminate structures over an electrode, such that each structure includes at least one first element oxide layer and at least one second element oxide layer. The overall set is operable as a resistive switching layer in a ReRAM cell. In this set, an average atomic ratio of the first element to the second element is different in at least two nanolaminate structures. This ratio may be less in nanolaminate structures that are closer to electrodes than in the middle nanolaminate structures. Alternatively, this ratio may increase from one end of the set to another. The first element may be less electronegative than the second elements. The first element may be hafnium, while the second element may be one of zirconium, aluminum, titanium, tantalum, or silicon. | 03-05-2015 |
20150093876 | Doped Oxide Dielectrics for Resistive Random Access Memory Cells - Provided are methods of fabricating memory cells such as resistive random access memory (ReRAM) cells. A method involves forming a first layer including two high-k dielectric materials such that one material has a higher dielectric constant than the other material. In some embodiments, hafnium oxide and titanium oxide form the first layer. The higher-k material may be present at a lower concentration. In some embodiments, a concentration ratio of these two high-k materials is between about 3 and 7. The first layer may be formed using atomic layer deposition. The first layer is then annealed in an oxygen-containing environment. The method may proceed with forming a second layer including a low-k dielectric material, such as silicon oxide, and forming an electrode. After forming the electrode, the memory cell is annealed in a nitrogen containing environment. The nitrogen anneal may be performed at a higher temperature than the oxygen anneal. | 04-02-2015 |
20150176122 | Low-temperature growth of complex compound films - Ternary oxides, nitrides and oxynitrides of the form (a)(b)O | 06-25-2015 |
20150179316 | Methods of forming nitrides at low substrate temperatures - Provided are methods of forming nitrides at low substrate temperatures, such as less than 500° C. or even less than 400° C. The nitrides can be formed using atomic layer deposition (ALD), chemical vapor deposition (CVD), and other like techniques. The low substrate temperatures allow using various temperature sensitive precursors, such as Tetrakis(DiMethylAmino)Hafnium (i.e., TDMAHf) or TertiaryButylimido-Tris(DiEthylamino)Tantalum (i.e., TBTDET), to form nitrides of components provided by these precursors. Furthermore, the low temperatures preserve other structures present on the substrate prior to forming the nitride layers. Nitrogen-containing precursors with low dissociation energy are used in these methods. Some examples of such nitrogen-containing precursors include hydrazine (N | 06-25-2015 |
20150179935 | Atomic Layer Deposition of Metal Oxides for Memory Applications - Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack which contains at least one hard metal oxide film (e.g., metal is completely oxidized or substantially oxidized) and at least one soft metal oxide film (e.g., metal is less oxidized than hard metal oxide). The soft metal oxide film is less electrically resistive than the hard metal oxide film since the soft metal oxide film is less oxidized or more metallic than the hard metal oxide film. In one example, the hard metal oxide film is formed by an ALD process utilizing ozone as the oxidizing agent while the soft metal oxide film is formed by another ALD process utilizing water vapor as the oxidizing agent. | 06-25-2015 |
Patent application number | Description | Published |
20090105292 | Glucocorticoid Receptor Modulator Compounds and Methods - Disclosed herein are compounds of Formula I:
| 04-23-2009 |
20100069379 | Bicyclic androgen and progesterone receptor modulator compounds and methods - The present invention is directed to compounds, pharmaceutical compositions, and methods for modulating processes mediated by AR and PR. More particularly, the invention relates to nonsteroidal compounds and compositions that are high affinity, high specificity agonists, partial agonists (i.e., partial activators and/or tissue-specific activators) and antagonists for AR and PR. Also provided are methods of making such compounds and pharmaceutical compositions, as well as critical intermediates used in their synthesis. | 03-18-2010 |
20110112084 | Bicyclic androgen and progesterone receptor modulator compounds and methods - The present invention is directed to compounds, pharmaceutical compositions, and methods for modulating processes mediated by AR and PR. More particularly, the invention relates to nonsteroidal compounds and compositions that are high affinity, high specificity agonists, partial agonists (i.e., partial activators and/or tissue-specific activators) and antagonists for AR and PR. Also provided are methods of making such compounds and pharmaceutical compositions, as well as critical intermediates used in their synthesis. | 05-12-2011 |
20130316943 | BORON CONTAINING POLYBASIC BACTERIAL EFFLUX PUMP INHIBITORS AND THERAPEUTIC USES THEREOF - Disclosed herein are polybasic bacterial efflux pump inhibitors containing boronic acid functionality and their methods of synthesis, methods of use, and pharmaceutical compositions. Some embodiments include methods of treating or preventing a bacterial infection by co-administering to a subject infected with bacteria or at risk of infection with bacteria the efflux pump inhibitor with another anti-bacterial agent. | 11-28-2013 |
Patent application number | Description | Published |
20080300241 | Tricyclic quinolinone and tricyclic quinoline androgen receptor modulator compounds and methods - Non-steroidal tricyclic quinolinone and tricyclic quinoline compounds and compositions that are agonists, partial agonists and/or antagonists for androgen receptors (AR), their preparation and their uses are described. | 12-04-2008 |
20100152098 | POLYBASIC BACTERIAL EFFLUX PUMP INHIBITORS AND THERAPEUTIC USES THEREOF - Disclosed are compounds having polybasic functionalities. The compounds inhibit bacterial efflux pump inhibitors and are used in combination with an anti-bacterial agent to treat or prevent bacterial infections. These combinations can be effective against bacterial infections that have developed resistance to anti-bacterial agents through an efflux pump mechanism. | 06-17-2010 |
20100210678 | Tricyclic androgen receptor modulator compounds and methods - Provided are non-steroidal tricyclic compounds that are modulators of androgen receptors and methods for making and using such compounds. | 08-19-2010 |
20130217619 | LINEAR PEPTIDE ANTIBIOTICS - Provided herein are antibacterial compounds, wherein the compounds in some embodiments have broad spectrum bioactivity. The compounds provided herein can in other embodiments overcome the resistance conferred by single amino acid mutations at defined positions of bacterial Signal Peptidases (SPases) and in other embodiments provide for a broad spectrum of antibiotic bioactivity. Pharmaceutical compositions and methods for treatment using the compounds described herein are also provided. | 08-22-2013 |
20140005186 | ANDROGEN RECEPTOR MODULATOR COMPOUNDS AND METHODS | 01-02-2014 |
20140142029 | MACROCYCLIC BROAD SPECTRUM ANTIBIOTICS - Provided herein are antibacterial compounds, wherein the compounds in some embodiments have broad spectrum bioactivity. In various embodiments, the compounds act by inhibition of bacterial type 1 signal peptidase (SpsB), an essential protein in bacteria. Pharmaceutical compositions and methods for treatment using the compounds described herein are also provided. | 05-22-2014 |
20140249073 | BROAD SPECTRUM ANTIBIOTICS - Provided herein are antibacterial compounds, wherein the compounds in some embodiments have broad spectrum bioactivity. The compounds provided herein can in other embodiments overcome the resistance conferred by single amino acid mutations at defined positions of bacterial Signal Peptidases (SPases) and in other embodiments provide for a broader spectrum of antibiotic bioactivity compared to the natural product. Pharmaceutical compositions and methods for treatment using the compounds described herein are also provided. | 09-04-2014 |
20150099720 | ANDROGEN RECEPTOR MODULATOR COMPOUNDS AND METHODS - Provided herein are compounds having a structure selected from among Formula (I), Formula (II), Formula (III), Formula (IV), Formula (V) and Formula (VI) that are androgen receptor modulators and/or androgen receptor binding agents. Also disclosed are methods of making and using such compounds, including, but not limited to, using such compounds for treating various conditions. | 04-09-2015 |
Patent application number | Description | Published |
20090162846 | SENP1 as a marker for cancer - The present invention provides methods of detecting cancer cells by detecting the quantity of SENP1 and/or telomerase in a sample. | 06-25-2009 |
20100086913 | Methods of Identification Using Methylation of CPG - The present invention relates to the materials and methods for the identification of methylated nucleotides in samples of genomic DNA. The present invention also relates to methods of diagnosis of specific conditions by identification of specific methylated nucleotides. | 04-08-2010 |
20100086914 | HIGH RESOLUTION, HIGH THROUGHPUT HLA GENOTYPING BY CLONAL SEQUENCING - The invention provides methods and reagent for performing full, multi-locus HLA genotyping for multiple individuals in a single sequencing run using clonal sequencing. | 04-08-2010 |
20100233686 | Multiplex Quantitative Nucleic Acid Amplification and Melting Assay - The invention is a single-tube multiplex assay, capable of simultaneously amplifying, detecting and quantifying multiple nucleic acid targets, using multiple hybridization probes, labeled with the same fluorescent reporter label, but each having a distinct melting temperature. The assay can be further multiplexed with the use of multiple sets of hybridization probes, each set labeled with a separate fluorescent reporter label. | 09-16-2010 |
20110136120 | Methods of Identification of Methylation of CPG - The present invention relates to the materials and methods for the identification of methylated nucleotides in samples of genomic DNA. The present invention also relates to methods of diagnosis of specific conditions by identification of specific methylated nucleotides. | 06-09-2011 |
20130309669 | Methods of Identification Using Methylation of CPG - The invention comprises a method of detecting cancer in a patient by detecting methylated DNA at a specific locus by treating the patient's sample with a methyl-active cleavage method utilizing 5-methyl deoxycytidine glycosylase/lyase. | 11-21-2013 |
20140309127 | METHODS OF DETECTING BLADDER CANCER - Compositions and methods for detecting bladder cancer are provided. In some embodiments, methods of detecting low grade bladder cancer are provided. In some embodiments, methods of monitoring recurrence of bladder cancer are provided. In some embodiments, the methods comprise detecting androgen receptor (AR) and/or uroplakin 1B (UPK1B). | 10-16-2014 |
20150133325 | METHODS OF DETECTING BLADDER CANCER - Compositions and methods for detecting bladder cancer are provided. In some embodiments, methods of monitoring recurrence of bladder cancer are provided. In some embodiments, the methods comprise detecting a set of markers consisting of CRH, IGF2, KRT20, and ANXA10. | 05-14-2015 |