Patent application number | Description | Published |
20100148309 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a method for manufacturing a semiconductor device in which a selective growth mask for partially covering a growth substrate is formed on a growth substrate; a buffer layer that is thicker than the mask is formed on a non-mask part not covered by the mask on the growth substrate, and a predetermined facet is exposed on the surface of the buffer layer; a semiconductor film is laterally grown using the buffer layer as a starting point, and a lateral growth layer for covering the mask is formed while cavities are formed on the upper part of the mask; and a device function layer is epitaxially grown on the lateral growth layer. The cavity formation step includes a first step for growing a semiconductor film at a growth rate and a second step for growing another semiconductor film at another growth rate mutually different from the first growth rate, wherein the first and second steps are carried out a plurality of times in alternating fashion. | 06-17-2010 |
20100155740 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A cavity-containing layer having a plurality of cavities is formed on a growth substrate by carrying out in alternating fashion a plurality of cycles of a first and second growth steps of growing a group III nitride at growth rates different from each other. The semiconductor epitaxial layer is subsequently formed on the cavity-containing layer, after which a support substrate is bonded to the semiconductor epitaxial layer. The growth substrate is separated from the cavity-containing layer. | 06-24-2010 |
20110175105 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND FABRICATION METHOD THEREOF - A plurality of protrusions is formed on the C-plane substrate with a corundum structure. A base film made of a III-V compound semiconductor including Ga and N is formed on the surface of the substrate. The surface of the base film is flatter than the surface of the substrate. A light emitting structure including Ga and N is disposed on the base film. The protrusions are regularly arranged in a first direction that is tilted by less than 15 degrees with respect to the a-axis of the base film and in a second direction that is orthogonal to the first direction. Each protrusion has two first parallel sides tilted by less than 15 degrees relative to an m-axis and two second parallel sides tilted by less than 15 degrees relative to the a-axis. An interval between the two second sides is wider than an interval between the two first sides. | 07-21-2011 |
20120241805 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor light emitting element, includes forming sacrifice portions within the width of street portions in a semiconductor laminated body, and performing wet etching to remove the sacrifice portions together with their neighboring portions, thereby removing etching residuals in the streets. | 09-27-2012 |
20130341661 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element comprising a light-reflecting layer formed on a support substrate, the light-reflecting layer having light reflectivity and including a bank portion having a particular plane pattern, a first electrode formed on the light-reflecting layer so as to surround the bank portion of the light-reflecting layer, the first electrode having light transparency, a stacked semiconductor layer formed on the first electrode, the stacked semiconductor layer, and a second electrode selectively formed on the stacked semiconductor layer, wherein the bank portion of the light-reflecting layer has a portion that overlaps the second electrode when viewed in plan, a portion that rises up from the first electrode when viewed in cross section, and a side wall surface that reflects light emitted from the active layer to a region of the second semiconductor layer in which the second electrode is not formed. | 12-26-2013 |
20140084328 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element wherein the heat radiation-ability of the entire element and heat concentration in the element surface are improved and wherein thus element characteristics such as luminous efficiency, in-plane uniformity of the luminous efficiency, and reliability are improved. Its support substrate, on which a semiconductor film having a first electrode formed thereon is placed, has a highly thermal conductive portion of higher thermal conductivity than the support substrate embedded extending from the back surface of the support substrate into the inside, and the highly thermal conductive portion has a cross-sectional shape corresponding to the shape of the first electrode in a plane parallel to the semiconductor film and is provided aligned with the first electrode along a direction parallel to and a direction perpendicular to the semiconductor film. | 03-27-2014 |
Patent application number | Description | Published |
20090179707 | SIGNAL PROCESSING CIRCUIT, SIGNAL PROCESSING METHOD, AND PLAYBACK APPARATUS - A signal processing circuit includes a feedback control loop that includes a loop filter and that detects the difference between a target value and a control value to control the difference so that the difference has a predetermined value. A closed loop formed in the feedback control loop is expressed by the delay of the entire closed loop serving as the feedback control loop, the loop filter, and simple integration of a final stage. The signal processing circuit includes a moving average calculating unit configured to calculate a moving average of outputs from the loop filter; a multiplying unit configured to multiply a value calculated in the loop filter by a certain gain; and an integrating unit provided upstream of the loop filter so that calculation results by the moving average calculating unit and the multiplication unit are concurrently fed back to an input into the loop filter. | 07-16-2009 |
20100231195 | MEASUREMENT APPARATUS, REPRODUCTION APPARATUS, AND MEASUREMENT METHOD - A measurement apparatus includes a moving average calculation section and a convergence judgment section. The moving average calculation section calculates a moving average by inputting a phase error between a phase of an input signal and a target phase, that is detected by a phase-locked loop circuit. The convergence judgment section judges that the phase-locked loop circuit is not converged when an absolute value of the moving average is equal to or larger than a first threshold value and judges that the phase-locked loop circuit is converged when the absolute value of the moving average is smaller than the first threshold value. | 09-16-2010 |
20110273972 | CODING APPARATUS, CODING METHOD, RECORDING APPARATUS, RECORDING METHOD, DECODING APPARATUS, AND DECODING METHOD - A coding apparatus includes a transform table in which with regard to data words of m bits and code words of n bits where n and m are both integers and also n>m is established, 2 | 11-10-2011 |
20110273976 | ENCODING APPARATUS AND METHOD, RECORDING APPARATUS AND METHOD, AND DECODING APPARATUS AND METHOD - An encoding apparatus that converts m-bit data words into n-bit code words, where m and n are both integers and satisfy an expression 2 | 11-10-2011 |
20110276990 | ENCODING DEVICE, ENCODING METHOD, RECORDING DEVICE, RECORDING METHOD, OPTICAL RECORDING MEDIUM, DECODING DEVICE AND DECODING METHOD - An encoding device for converting m-bit data words into n-bit (both n and m are integers and 2 | 11-10-2011 |
20130250744 | RECORDING DEVICE AND STRAY LIGHT SIGNAL COMPONENT CANCELLATION METHOD - Provided is a recording device, including a light irradiation/receiving unit that irradiates an optical recording medium with first light and second light, and that receives backpropagating light of the second light from the optical recording medium, a recording unit that carries out recording on the optical recording medium, a playback signal generating unit that obtains a playback signal of a signal, and a stray light signal component canceling unit that generates, based on recording data, a stray light cancel signal for canceling a stray light signal component. | 09-26-2013 |
20130322222 | OPTICAL INFORMATION RECORDING MEDIUM AND REPRODUCING APPARATUS - An optical information recording medium on which recording address information is performed by a CAV or a zone CAV system, wherein a groove wobbling continuously is formed in advance to record the information to the groove and a land abutting the groove, the address information is recorded by a wobble where a plurality of modulated waves modulated by the address information are multiply formed, the modulated wave is a higher harmonic wave whose frequency is a fundamental wave of the fundamental frequency of the wobble, or an integer times the fundamental frequency of the wobble, one modulated wave is modulated by the address information of one land of the abutting lands which interpose the groove, and the other modulated wave is modulated by the address information of the other land of the abutting lands which interpose the groove. | 12-05-2013 |
20140219073 | INFORMATION RECORDING MEDIUM, INFORMATION REPRODUCING METHOD, AND INFORMATION REPRODUCING APPARATUS - An information recording medium is provided with an information track formed thereon in a shape of concentric circles or in a spiral shape, wherein a continuously-wobbling groove in which information is recorded is formed in advance, the information is delimited by a predetermined number of wobble sections, a sync mark is placed in a plurality of wobble sections in the vicinity of a delimiter of the predetermined number of wobble sections, and the sync mark is spaced apart from data other than the sync mark at a distance. | 08-07-2014 |
20140272915 | ACCELERATION SENSATION PRESENTATION APPARATUS, ACCELERATION SENSATION PRESENTATION METHOD, AND ACCELERATION SENSATION PRESENTATION SYSTEM - An acceleration sensation presentation apparatus includes: a frame to be worn on the head of a user; at least one or more weights provided to the frame; and a vibration driving unit configured to vibrate the weight to be moved. | 09-18-2014 |
20150044662 | ACCELERATION SENSATION PRESENTATION DEVICE, ACCELERATION SENSATION PRESENTATION METHOD, AND ACCELERATION SENSATION PRESENTATION SYSTEM - An acceleration sensation presentation device which is attached to a vicinity of head of a user, the device including one or a plurality of spindles; and a spindle driving unit which generates a force in a direction different from a predetermined direction by moving the spindle in the predetermined direction. | 02-12-2015 |
Patent application number | Description | Published |
20090121337 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR - To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented. | 05-14-2009 |
20090191667 | SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME - A semiconductor device having a structure in which the structure is laminated in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of the other semiconductor chip by the adhesive layer of the back surface, a semiconductor device having a structure in which the semiconductor device is laminated in many stages is manufactured. | 07-30-2009 |
20100213594 | SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME - A semiconductor device having a structure in which the structure is laminated in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of the other semiconductor chip by the adhesive layer of the back surface, a semiconductor device having a structure in which the semiconductor device is laminated in many stages is manufactured. | 08-26-2010 |
20110124180 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD COMPRISING A METAL PATTERN AND LASER MODIFIED REGIONS IN A CUTTING REGION - To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented. | 05-26-2011 |
20130143359 | SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME - A semiconductor device having a structure in which the structure is laminated in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of the other semiconductor chip by the adhesive layer of the back surface, a semiconductor device having a structure in which the semiconductor device is laminated in many stages is manufactured. | 06-06-2013 |
20140252643 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented. | 09-11-2014 |
Patent application number | Description | Published |
20080315300 | Semiconductor device and method for manufacturing semiconductor device - A semiconductor device includes: a semiconductor substrate having a substrate surface; a spiral body constituted by a linear semiconductor layer on which a body region including a channel region, a first source/drain region disposed on the body region, and a second source/drain region disposed under the body region or in the semiconductor substrate around the linear semiconductor layer are formed, the linear semiconductor layer being formed on the substrate surface substantially in a spiral form viewed from the substrate surface in a plan view, formed substantially in a protrudent form in a cross-sectional view, and having a pair of sidewall portions; a gate insulating film formed on at least the pair of sidewall portions constituting the linear semiconductor layer; and a gate electrode that is adjacent to the pair of sidewall portions via the gate insulating film. | 12-25-2008 |
20090032849 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a cylindrical main pillar that is formed on a substrate and of which a central axis is perpendicular to the surface of the substrate, source and drain diffused layers that are formed in a concentric shape centered on the central axis at upper and lower portions of the main pillar and made from a first-conduction-type material, a body layer that is formed at an intermediate portion of the main pillar sandwiched between the source and drain diffused layers and made from the first-conduction-type material, and a front gate electrode that is formed on a lateral face of the main pillar while placing a gate insulating film therebetween. Moreover, a back gate electrode made from a second-conduction-type material is formed in a pillar shape penetrating from an upper portion to a lower portion on an inner side of the main pillar. | 02-05-2009 |
20130140628 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a cylindrical main pillar that is formed on a substrate and of which a central axis is perpendicular to the surface of the substrate, source and drain diffused layers that are formed in a concentric shape centered on the central axis at upper and lower portions of the main pillar and made from a first-conduction-type material, a body layer that is formed at an intermediate portion of the main pillar sandwiched between the source and drain diffused layers and made from the first-conduction-type material, and a front gate electrode that is formed on a lateral face of the main pillar while placing a gate insulating film therebetween. Moreover, a back gate electrode made from a second-conduction-type material is formed in a pillar shape penetrating from an upper portion to a lower portion on an inner side of the main pillar. | 06-06-2013 |