Patent application number | Description | Published |
20080238550 | POWER AMPLIFIER AND TRANSMISSION AND RECEPTION SYSTEM - A power amplifier includes: a first multi-finger FET formed on a semiconductor substrate; a second multi-finger FET formed on the semiconductor substrate; a first temperature detector which detects a channel temperature of the first FET; a second temperature detector which detects a channel temperature of the second FET; a third temperature detector which detects a temperature of the semiconductor substrate; a first detection circuit detecting a difference between an output of the first temperature detector and an output of the third temperature detector and converting the difference to thermoelectromotive force; a second detection circuit detecting a difference between an output of the second temperature detector and the output of the third temperature detector and converting the difference to thermoelectromotive force; and a comparator comparing outputs of the first and second detection circuits with each other to turn on one of the first and second switches and turn off the other. | 10-02-2008 |
20080258815 | HIGH FREQUENCY POWER AMPLIFIER AND WIRELESS PORTABLE TERMINAL USING THE SAME - An object is to provide a high frequency power amplifier in which lowering of output power during operation is prevented, influence of thermal noise is suppressed, high frequency operation is stable, and long-term reliability is ensured. The high frequency power amplifier includes a plurality of transistors having gate electrodes, source regions and drain regions, the gate electrodes, source regions and drain regions being respectively connected in common, and a plurality of acoustic reflection layers being buried in portions of the semiconductor substrate, the portions being located between adjacent transistors, the acoustic reflection layers being disposed in a direction which is oblique to a length direction of the gate electrode. | 10-23-2008 |
20080318356 | SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME - It is made possible to provide a highly integrated, thin apparatus can be obtained, even if the apparatus contains MEMS devices and semiconductor devices. A semiconductor apparatus includes: a first chip comprising a MEMS device formed therein; a second chip comprising a semiconductor device formed therein; and an adhesive layer bonding a side face of the first chip to a side face of the second chip, and having a lower Young's modulus than the material of the first and second chips. | 12-25-2008 |
20090050988 | MEMS APPARATUS AND METHOD OF MANUFACTURING THE SAME - A MEMS apparatus includes a MEMS unit formed on a semiconductor substrate and a cover provided with a pore and serving to seal the MEMS unit. The pore is sealed with a sealing material shaped in a sphere or a hemisphere. | 02-26-2009 |
20090079443 | SENSOR DEVICE AND DISPLAY APPARATUS - A sensor device according to an embodiment of the present invention includes an electrode array having plural electrodes arranged in an array manner, a signal generator configured to generate a first signal having a first frequency, and apply the first signal to the plural electrodes, and a detection unit configured to, when the first signal is applied to the plural electrodes, and a second signal having a second frequency is applied to an object to be detected, detect a distance between each electrode included in the electrode array and the surface of the object, using an interference wave between the first signal applied to each electrode and the second signal applied to the object, or detect irregularities on the surface of the object, using a signal generated by using the interference wave outputted from one electrode and the interference wave outputted from another electrode. | 03-26-2009 |
20090086879 | SENSOR DEVICE, AND SENSOR SYSTEM AND ELECTRONIC DEVICE USING THE SENSOR DEVICE - A sensor device which detects a positional relationship between an first member and second member, includes a signal source generating an electrical signal, a first electrode receiving the electrical signal and storing an electrical charge at a first part on the first member, a second electrode inducing an electrical charge at the second part on the second member, a third electrode inducing an electrical charge at the third part on the second member, a fourth electrode inducing an electrical charge at the fourth part on the first member, a reference electrode disposed at a fifth part on the second member to be connected to a reference voltage point, a fifth electrode inducing an electrical charge at the sixth part on the first member, and a differential amplifier amplifying a voltage difference between the fourth electrode and the fifth electrode and outputting a difference signal. | 04-02-2009 |
20090095909 | BOLOMETER TYPE UNCOOLED INFRARED RAY SENSOR AND METHOD FOR DRIVING THE SAME - A bolometer type uncooled infrared ray sensor includes: an image pickup region having detection pixels arranged in a matrix form on a semiconductor substrate to detect incident infrared rays; a plurality of row selection lines provided in the image pickup region; current sources capable of letting constant currents flow through the respective row selection lines; a plurality of signal lines provided in the image pickup region; voltage readout circuits provided so as to respectively correspond to the signal lines to read out signal voltages generated on the respectively corresponding signal lines; coupling capacitances respectively provided between the respective signal lines and the corresponding voltage readout circuits; and a calculator which calculates a difference between two signal voltages read out by the voltage readout circuits, corresponding to outputs of the same detection pixel for two different current values supplied from the current sources. | 04-16-2009 |
20090127639 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes: a first chip including a MEMS device which has a structure supported in midair therein, and having first pads and a first joining region electrically connected to the MEMS device on a top face thereof; a second chip including a circuit having a semiconductor device electrically connected to the MEMS device therein, and having second pads and a second joining region electrically connected to the semiconductor device on a top face thereof, the second chip being disposed in opposition to the first chip so as to oppose the second pads and the second joining region respectively to the first pads and the first joining region; electrical connection parts which electrically connect the first pads to the second pads, respectively; and joining parts provided between the first joining region and the second joining region opposed to the first joining region to join the first chip and the second chip to each other. | 05-21-2009 |
20090206444 | INTEGRATED SEMICONDUCTOR DEVICE - An integrated semiconductor device includes a plurality of semiconductor elements having different integrated element circuits or different sizes; an insulating material arranged between the semiconductor elements; an organic insulating film arranged entirely on the semiconductor elements and the insulating material; a fine thin-layer wiring that arranged on the organic insulating film and connects the semiconductor elements; a first input/output electrode arranged on an area of the insulating material; and a first bump electrode formed on the first input/output electrode. | 08-20-2009 |
20090236526 | INFRARED RAY SENSOR ELEMENT - An infrared ray sensor element includes: a first signal wiring part including a first signal wire and provided on a first region of a semiconductor substrate different from a region on which a concave part is provided; a second signal wiring part including a second signal wire and provided on the first region so as to intersect the first signal wiring part; a supporter including a support wiring part disposed over the concave part, and including a first wire electrically connected at a first end thereof to the first signal wire, and a second wire insulated from the first wire, disposed in parallel with the first wire, and electrically connected at a first end thereof to the second signal wire; a thermoelectric transducer electrically connected to second ends of the first and second wires; an infrared ray absorption layer provided over the thermoelectric transducer; and a detection cell provided over the concave part. | 09-24-2009 |
20090237772 | OPTICAL ELEMENT, OPTICAL DEVICE, AND DISPLAY DEVICE - An optical element includes a plurality of first beam bodies arranged in a first direction on a first plane and being parallel to each other, and second beam bodies placed between adjacent ones of the first beam bodies and provided parallel to the first beam bodies. The first beam body has side surfaces which face the second beam bodies adjacent thereto and are sloped so that the width in the first direction gradually decreases to the upward direction perpendicular to the first plane, the second beam body has side surfaces which face the first beam bodies adjacent thereto and are sloped so that the width in the first direction gradually increases to the upward direction perpendicular to the first plane, and as viewed in the first direction, the spacing between the first beam body and the second beam body is variable. | 09-24-2009 |
20090242951 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device has a photoelectric conversion element that converts light incident from a first surface of a substrate into a signal charge and accumulates the signal charge, a transistor that is formed on a second surface side opposite to the first surface of the substrate and reads out the signal charge accumulated by the photoelectric conversion element, a supporting substrate stuck to the second surface of the substrate, and an antireflection coating formed on the first surface of the substrate, wherein the first surface of the substrate includes a curved surface or an inclined surface forming a prescribed angle to the second surface. | 10-01-2009 |
20090244346 | IMAGE SENSOR AND DRIVING METHOD THEREFOR - This disclosure concerns an image sensor including: an imaging area; row selection lines; and column signal lines, wherein a pixel includes: a photodiode; a capacitor connected to the photodiode at a first node; a reset transistor connected between the first node and a first power supply; a comparator comparing the potential of the first node with a reference voltage, and outputting a result to a gate of the reset transistor; a counter connected to the comparator, counting an inversion count of an output signal from the comparator, and outputting a digital value according to the inversion count, the output signal being generated from the comparator when the potential of the first node reaches the potential of the first power supply; and a selection transistor connected between the counter and one of the plurality of column signal lines, and having a gate connected to one of the row selection lines. | 10-01-2009 |
20090266987 | INFRARED DETECTOR AND SOLID STATE IMAGE SENSOR HAVING THE SAME - An infrared detector includes: a readout wiring portion provided on a semiconductor substrate; a support structure portion disposed over a concave portion formed in a surface portion of the semiconductor substrate, the support structure portion having connection wiring connected electrically to the readout wiring portion; and a cell portion disposed over the concave portion and supported by the support structure portion. The cell portion includes: an infrared absorption layer absorbing incident infrared rays; and a plurality of thermoelectric conversion elements connected electrically to the support structure portion and insulated electrically from the infrared absorption layer to generate an electric signal by detecting a temperature change of the cell portion, each of the thermoelectric conversion elements includes a semiconductor layer, a p-type silicon layer and an n-type silicon layer formed with a space between them in the semiconductor layer, and a polysilicon layer formed on the semiconductor layer between the p-type silicon layer and the n-type silicon layer. | 10-29-2009 |
20100025584 | IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels. | 02-04-2010 |
20100026319 | SENSOR DEVICE, AND PORTABLE COMMUNICATION TERMINAL AND ELECTRONIC DEVICE USING THE SENSOR DEVICE - A sensor device for detecting a positional relationship between a first member and a second member, includes a first electrode provided on a surface of the first member and supplied with an alternating signal of a first frequency, a second electrode provided on a surface of the second member and supplied with an alternating signal of a second frequency, and a beat detector which detects a beat frequency component corresponding to a difference between the first and second frequencies indicative of the positional relationship between the first member and the second member, when the positional relationship between the first and second members changes to cause the first electrode to approach the second electrode. | 02-04-2010 |
20100187594 | SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory includes a semiconductor substrate, a buried insulating film formed on a part of an upper surface of the semiconductor substrate, and a semiconductor layer formed on another part of the upper surface of the semiconductor substrate. Each of the memory cell transistors comprises a first-conductivity-type source region, a first-conductivity-type drain region, and a first-conductivity-type channel region arranged in the semiconductor layer in the column direction, and a gate portion formed on a side surface of the channel region in the row direction. | 07-29-2010 |
20100230594 | INFRARED SOLID-STATE IMAGE SENSOR - An infrared solid-state image sensor comprises: a pixel area comprising a sensitive pixel area where infrared detection pixels are arranged in a matrix form to detect incident infrared rays on the semiconductor substrate and a reference pixel area where reference pixels are provided, each of the infrared detection pixels comprising a thermoelectric conversion part, the thermoelectric conversion part comprising an infrared absorption film to absorb the incident infrared rays and convert the incident infrared rays to heat and a first thermoelectric conversion element to convert the heat obtained by the conversion in the infrared absorption film to a electric signal, each of the reference pixels comprising a second thermoelectric conversion element. Each of first ends of the reference pixels are connected to a reference potential line, and a difference between the signal potential read out from a corresponding signal line and a reference potential supplied from the reference potential line is amplified and outputted. | 09-16-2010 |
20100231246 | SENSOR APPARATUS FOR DETECTING A POSITIONAL RELATIONSHIP BETWEEN TWO MEMBERS AND METHOD USED FOR THE SENSOR APPARATUS - A sensor apparatus for detecting a positional relationship includes a first electrode, an applying unit applying a charging signal with a first cycle period to the first electrode, a second electrode, a selecting unit selecting the first or second cycle period which have overlapped segment periods, an output unit outputting electrical signals supplied from the second electrode with the first cycle period, if the first cycle period is selected, and parts of the electrical signals during the segment periods, if the second cycle period is selected, a comparator comparing an amplitude of the electrical signals with a threshold value and generating a first or second comparison signal and a controller generating a proximity and non-proximity signal in response to the first and second comparison signal, respectively, so that the selecting unit selects the first and second cycle period in response to the proximity and non-proximity signal, respectively. | 09-16-2010 |
20110061449 | ELECTRONIC DEVICE - According to one embodiment, an electronic device includes an airtight container, a functioning unit, and an airtightness detection unit. The airtight container has a containment space capable of being sealed airtightly. The functioning unit is stored in the containment space. The functioning unit is capable of executing a prescribed function. The airtightness detection unit is stored in the containment space. The airtightness detection unit is capable of detecting an airtightness of the containment space. | 03-17-2011 |
20110156186 | SOLID-STATE IMAGING DEVICE - Certain embodiments provide a solid-state imaging device including: a plurality of pixels provided on a semiconductor substrate, each of the pixels having a semiconductor region that converts incident light from a side of a first face of the semiconductor substrate into signal charges and stores the signal charges; a readout circuit provided on a side of a second face that is the opposite side from the first face, and reading out the signal charges stored in the pixels; and a pixel separation structure provided between adjacent ones of the pixels in the semiconductor substrate, the pixel separation structure including a stack film buried in a trench extending from the first face, the stack film including a first insulating film provided along side faces and a bottom face of the trench, and a fixed charge film provided in the trench to cover the first insulating film and retaining fixed charges that are non-signal charges. | 06-30-2011 |
20110175187 | SOLID-STATE IMAGING DEVICE - Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges. | 07-21-2011 |
20110226953 | SOLID-STATE IMAGING ELEMENT - It is possible to quickly and readily determine the location of an object. A solid-state imaging element according to an embodiment includes: at least two infrared detectors formed on a semiconductor substrate; an electric interconnect configured to connect the at least two infrared detectors in series; and a comparator unit configured to compare an intermediate voltage of the electric interconnect connecting the infrared detectors in series, with a predetermined reference voltage. | 09-22-2011 |
20120007205 | INFRARED IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure. | 01-12-2012 |
20120056291 | IMAGING DEVICE, IMAGING MODULE AND METHOD FOR MANUFACTURING IMAGING DEVICE - According to one embodiment, an imaging device includes a substrate, a photodetecting portion, a circuit portion and a through interconnect. The substrate has a first major surface, a second major surface on a side opposite to the first major surface, a recess portion provided on the first major surface and retreated in a first direction going from the first major surface to the second major surface, and a through hole communicating with the first major surface and the second major surface and extending in the first direction. The photodetecting portion is provided above the recess portion and away from the substrate. The circuit portion is electrically connected to the photodetecting portion and provided on the first major surface. The through interconnect is electrically connected to the circuit portion and provided inside the through hole. The recess portion has a first inclined surface. The through hole has a second inclined surface. | 03-08-2012 |
20120057020 | SOLID-STATE IMAGING DEVICE - According to an embodiment, a solid-state imaging device includes: an imaging device including an imaging area including a plurality of pixel blocks each of which includes a plurality of pixels; an image formation lens forming an image on an image formation plane by using light from a subject; an aperture unit including a plurality of aperture elements provided to associate with the plurality of pixel blocks, each of the aperture elements having an aperture portion and a shield portion, light from the image formation lens being filtered by each aperture element; a microlens array including a plurality of microlenses provided to associate with the plurality of aperture elements, each of the microlenses forming an image in the imaging area by using light filtered by an associated aperture element; and a signal processing circuit configured to process a signal of an image taken in the imaging area and estimates a distance to the subject. | 03-08-2012 |
20120061791 | INFRARED DETECTION DEVICE - According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell. | 03-15-2012 |
20120062771 | SOLID-STATE IMAGING DEVICE - In one embodiment, a solid-state imaging device includes: an imaging optical system including: a first and second surfaces facing each other; a flat reflector provided on the first surface and having an aperture in an outer circumferential portion; and a plurality of reflectors provided on the second surface and located in a plurality of ring-like areas, each of the reflectors being inclined in a radial direction, the reflectors having different diameters from one another; and an imaging element module including: an imaging element including an imaging area having a plurality of pixel blocks each including a plurality of pixels, and receiving and converting light from the imaging optical system into image data; a visible light transmission substrate provided between the imaging optical system and the imaging element; a microlens array provided on a surface of the visible light transmission substrate on the imaging element side; and an image processing unit processing the image data obtained by the imaging element. | 03-15-2012 |
20120119088 | INFRARED IMAGING DEVICE - An infrared imaging device according to an embodiment includes: an imaging area formed on a semiconductor substrate, the imaging area having a plurality of pixels arranged in a matrix form, the plurality of pixels including a plurality of reference pixels arranged in at least one row and a plurality of infrared detection pixels arranged in remaining rows to detect incident infrared rays, each of the reference pixels having a first thermoelectric conversion element, each of the infrared detection pixel having a thermoelectric conversion unit, the thermoelectric conversion unit having an infrared absorption film to absorb the incident infrared rays and convert the incident infrared rays to heat and a second thermoelectric conversion element to convert the heat obtained by the conversion conducted by the infrared absorption film to an electric signal. | 05-17-2012 |
20120133011 | SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged on a first face of a first semiconductor layer, each of the pixels including a photoelectric conversion element converting light entering through a second face of the first semiconductor layer on the opposite side from the first face into a signal charge, the photoelectric conversion element having a pn junction formed with a first semiconductor region formed on the first face and a second semiconductor region formed on a surface of the first semiconductor region; pixel separating regions separating the pixels from one another and formed between the pixels, each of the pixel separating regions including a second semiconductor layer covering faces in contact with the photoelectric conversion elements, and an insulating film with a lower refractive index than a refractive index of the second semiconductor layer to cover the second semiconductor layer. | 05-31-2012 |
20120218448 | SOLID-STATE IMAGING DEVICE AND PORTABLE INFORMATION TERMINAL - A solid-state imaging device according to an embodiment includes: an imaging element formed on a semiconductor substrate, and comprising an imaging region including a plurality of pixel blocks each including a plurality of pixels; a first optical system forming an image of an object on an imaging plane; and a second optical system comprising a microlens array including a plurality of microlenses each corresponding to one of the pixel blocks, and reducing and re-forming the image to be formed on the imaging plane on the pixel blocks corresponding to the respective microlenses. The imaging plane of the first optical system is located further away from the first optical system than the imaging element when the object is located at an infinite distance. | 08-30-2012 |
20120218454 | OPTICAL DEVICE, SOLID-STATE IMAGE APPARATUS, PORTABLE INFORMATION TERMINAL, AND DISPLAY APPARATUS - An optical element according to an embodiment includes: a lens array including a plurality of convex shaped lenses provided on a first surface thereof and taking a flat shape at a second surface which is opposite from the first surface; a lens holder comprising concave portions formed to correspond to respective lenses in the lens array, at a surface opposed to the lens array, each of the concave portions having a size which makes it possible for one of the convex shaped lenses corresponding to the concave portion to fit therein; and a drive unit configured to drive at least one of the lens array and the lens holder to bring the convex shaped lenses in the lens array and the concave portions in the lens holder into an isolation state or a contact state. | 08-30-2012 |
20120228496 | UNCOOLED INFRARED IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF - An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor. | 09-13-2012 |
20120228497 | INFRARED IMAGING ELEMENT - An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit. | 09-13-2012 |
20120228506 | SOLID STATE IMAGING DEVICE - According to one embodiment, a solid state imaging device includes an infrared detection pixel configured to change an output potential by receiving infrared light, a non-sensitive pixel, a row select line, and a differential amplifier. An amount of change in an output potential when the non-sensitive pixel receives infrared light is smaller than an amount of change in an output potential when the infrared detection pixel receives the infrared light. The row select line is configured to apply a drive potential to both the infrared detection pixel and the non-sensitive pixel. The differential amplifier includes one input terminal to which an output potential of the infrared detection pixel is inputted and another input terminal to which an output potential of the non-sensitive pixel is inputted. | 09-13-2012 |
20120229683 | SOLID-STATE IMAGING DEVICE AND PORTABLE INFORMATION TERMINAL - A solid-state imaging device according to an embodiment includes: a first optical system configured to form an image of an object on an image formation plane; an imaging element comprising an imaging area which includes a plurality of pixel blocks each including a plurality of pixels; a second optical system configured to include a microlens array including a plurality of microlenses provided to correspond to the plurality of pixel blocks and reduce and re-form an image scheduled to be formed on the image formation plane, in a pixel block corresponding to an individual microlens; and a signal processing unit configured to perform image signal processing with an optical position relation between each microlens and the pixel block corrected, by using an image signal of the object obtained by the imaging element. | 09-13-2012 |
20120241613 | INFRARED IMAGING DEVICE AND INFRARED IMAGING APPARATUS USING IT - One embodiment provides an infrared imaging device, including: a substrate; connection wiring portions arranged in matrix form on the substrate; a first infrared detecting portion configured to convert intensity of absorbed infrared radiation into a first signal; and a second infrared detecting portion configured to convert intensity of absorbed infrared radiation into a second signal, the second infrared detecting portion being larger in thermal conductance than the first infrared detecting portion. | 09-27-2012 |
20130075585 | SOLID IMAGING DEVICE - According to one embodiment, a solid imaging device includes an imaging substrate, an imaging lens, a microlens array substrate and a polarizing plate array substrate. The imaging substrate has a plurality of pixels formed on an upper side thereof. The imaging lens is provided above the imaging substrate. The optical axis in the imaging lens intersects with the upper side of the imaging substrate. The microlens array substrate is provided between the imaging substrate and the imaging lens. A surface in the microlens array substrate has a plurality of microlenses arranged two-dimensionally. The surface of the microlens array intersects with the optical axis. The polarizing plate array substrate is provided between the imaging substrate and the imaging lens. The plurality of kinds of polarizing plates in the polarizing plate array substrate having polarization axes in mutually different directions are arranged two dimensionally. | 03-28-2013 |
20130075586 | SOLID IMAGING DEVICE AND PORTABLE INFORMATION TERMINAL DEVICE - According to one embodiment, a solid imaging device includes an imaging substrate, a light-shielding member and a AD conversion circuits. The imaging substrate is two-dimensionally arranged with a plurality of pixels. The plurality of pixels have a top face formed with an optoelectronic conversion element for converting incident light into an electric charge and storing it and a back face opposite to the top faces. The imaging substrate is formed with a top face by the top face of the plurality of pixels and formed with a back face by the back face of the plurality of pixels. The light-shielding member is provided on the top face side of the imaging substrate. The AD conversion circuits is formed on the back face of the pixels shielded from the light. | 03-28-2013 |
20130075587 | SOLID STATE IMAGING DEVICE, PORTABLE INFORMATION TERMINAL DEVICE AND METHOD FOR MANUFACTURING SOLID STATE IMAGING DEVICE - According to one embodiment, a solid state imaging device includes a sensor substrate having a plurality of pixels formed on an upper face, a microlens array substrate having a plurality of microlenses formed and a connection post with one end bonded to a region between the microlenses on the microlens array substrate and with the other end bonded to the upper face. | 03-28-2013 |
20130075849 | SOLID STATE IMAGING DEVICE, SOLID STATE IMAGING ELEMENT, PORTABLE INFORMATION TERMINAL DEVICE AND METHOD FOR MANUFACTURING THE SOLID STATE IMAGING ELEMENT - According to one embodiment, a solid state imaging device includes a sensor substrate curved such that an upper face having a plurality of pixels formed is recessed and an imaging lens provided on the upper face side. | 03-28-2013 |
20130076923 | CAMERA SHAKE CORRECTION DEVICE AND IMAGING DEVICE - According to one embodiment, a camera shake correction device includes a substrate, a fixed part, a linking part, a movable part, a first spring part, a second spring part, a first damper, and a second damper. The fixed part is provided on the substrate and fixed to the substrate. The linking part is provided around the fixed part on the substrate that can move in a first direction within a plane of the substrate with respect to the fixed part. The movable part is provided on the substrate and arranged around the fixed part and the linking part that can move in a second direction that intersects with the first direction within the plane of the substrate. | 03-28-2013 |
20130093902 | INFRARED SOLID STATE IMAGING DEVICE - An infrared solid state imaging device includes an infrared detection element unit having heat sensitive pixels, an AD conversion unit which conducts analog-to-digital conversion on an infrared image signal obtained by the infrared detection element unit, and a digital signal processing unit which converts the image signal converted to a digital signal. The digital signal processing unit stores an image value produced from the digital signal, and acquired in a frame immediately preceding a current frame, subtracts an image value obtained by multiplying the image value acquired in the frame immediately preceding the current frame by a predetermined constant α in a range of 0 to 1, from an image value acquired in the current frame, and conducts processing of multiplying a resultant image value obtained by the subtraction by 1/(1−α) so that an infrared image with less afterimage is provided. | 04-18-2013 |
20130240709 | SOLID-STATE IMAGING DEVICE AND PORTABLE INFORMATION TERMINAL - A solid-state imaging device according to an embodiment includes: an imaging element including a semiconductor substrate and a plurality of pixel blocks, each of the pixel blocks including at least two of R pixels, G pixels, B pixels, and W pixels; a first optical system configured to form an image of an object on an imaging plane; and a second optical system including a microlens array having a plurality of microlenses provided for the respective pixels blocks, the second optical system being located between the imaging element and the first optical system, the second optical system being configured to reduce and re-image the image formed on the imaging plane onto each of the pixel blocks. A proportion of the W pixels to be provided increases in a direction from a center of each pixel block toward an outer periphery thereof. | 09-19-2013 |
20130242161 | SOLID-STATE IMAGING DEVICE AND PORTABLE INFORMATION TERMINAL - A solid-state imaging device according to an embodiment includes: an imaging element including a plurality of pixel blocks each containing a plurality of pixels; a first optical system forming an image of an object on an imaging plane; and a second optical system including a microlens array, the microlens array including a light transmissive substrate, a plurality of first microlenses formed on the light transmissive substrate, and a plurality of second microlenses formed around the first microlenses, a focal length of the first microlenses being substantially equal to a focal length of the second microlenses, an area of the first microlenses in contact with the light transmissive substrate being larger than an area of the second microlenses in contact with the light transmissive substrate, the second optical system being configured to reduce and reconstruct the image formed on the imaging plane on the pixel blocks via the microlens array. | 09-19-2013 |
20130248714 | UNCOOLED INFRARED IMAGING DEVICE - An uncooled infrared imaging device according to an embodiment includes: reference pixels formed on a semiconductor substrate and arranged in at least one row; and infrared detection pixels arranged in the remaining rows and detecting incident infrared rays. Each of the reference pixels includes a first cell located above a first concave portion. The first cell includes a first thermoelectric conversion unit having a first infrared absorption film; and a first thermoelectric conversion element. Each of the infrared detection pixels includes a second cell located above a second concave portion, and having a larger area than the first cell. The second cell includes: a second thermoelectric converting unit located above the second concave portion; and first and second supporting structure units supporting the second thermoelectric converting unit above the second concave portion. The second thermoelectric converting unit includes: a second infrared absorption film; and a second thermoelectric conversion element. | 09-26-2013 |
20130248724 | RADIATION DETECTION APPARATUS - A radiation detection apparatus according to an embodiment includes: a scintillator including a fluorescent material to convert radiation to visible radiation photon; a photon detection device array having a plurality of cells each of which includes a photon detection device to detect visible radiation photon emitted from a fluorescent material in the scintillator and convert the visible radiation photon to an electric signal; and a plurality of lenses provided on cells respectively in association with the cells to cause the visible radiation photon to be incident on the photon detection device in an associated cell. | 09-26-2013 |
20140084392 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - After a TEOS oxide film is formed on the surface of a semiconductor device, a PSG film and an SiN film, which have air permeability, are formed on the surface of the TEOS oxide film. Thereafter, a Poly-Si film is formed thereon. A sacrifice layer is removed by a gaseous HF that passes through the PSG film, the SiN film, and the Poly-Si film, and then, the uppermost layer is covered with a Poly-Si/SiC film. A chip scale package having a thin-film hollow-seal structure can be realized on the semiconductor element. | 03-27-2014 |
20140118516 | SOLID STATE IMAGING MODULE, SOLID STATE IMAGING DEVICE, AND INFORMATION PROCESSING DEVICE - A solid state imaging module according to an embodiment can be attached to and detached from an information processing device, the solid state imaging module including: an imaging element formed on a semiconductor substrate and including a plurality of pixel blocks, each of the plurality of pixel blocks having a plurality of pixels; a first optical system for imaging a subject on an imaging plane; and input and output terminals that are connectable to the information processing device, which processes information from the imaging element. | 05-01-2014 |
20140131553 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device according to an embodiment includes: an imaging element including an imaging area formed with a plurality of pixel blocks each including pixels; a first optical system forming an image of an object on an imaging surface; and a second optical system re-forming the image, which has been formed on the imaging surface, on the pixel blocks corresponding to microlenses, the second optical system including a microlens array formed with the microlenses provided in accordance with the pixel blocks. The microlenses are arranged in such a manner that an angle θ between a straight line connecting center points of adjacent microlenses and one of a row direction and a column direction in which the pixels are aligned is expressed as follows: θ>sin | 05-15-2014 |
20140132279 | APPARATUS AND METHOD FOR INSPECTING INFRARED SOLID-STATE IMAGE SENSOR - An apparatus includes: a current control unit to control an amount of constant current and supply a first and second constant currents to an infrared detection pixel; a constant current supply time control unit to control periods of time in which the first and second constant currents are supplied to the infrared detection pixel; an A-D converter to convert a first and second electrical signals from the infrared detection pixel into a first and second digital signals, the first and second electrical signals being generated when the first and second constant currents is supplied to the infrared detection pixel, respectively; a subtracting unit to calculate a difference between the first and second digital signals; and a determining unit to determine whether the infrared detection pixel is a defective pixel based on the absolute value of the difference calculated by the subtracting unit. | 05-15-2014 |
20140139714 | SOLID STATE IMAGING DEVICE - A solid state imaging device according to an embodiment includes a photo detector arranged two-dimensionally in a semiconductor substrate, a readout circuit provided in the semiconductor substrate, a first photoelectric conversion layer provided above the photo detector, a plurality of first metal dots provided above the first photoelectric conversion layer, a second photoelectric conversion layer provided above the first metal dots, and a plurality of second metal dots provided above the second photoelectric conversion layer. | 05-22-2014 |
20140240559 | SOLID STATE IMAGING DEVICE, PORTABLE INFORMATION TERMINAL, AND SOLID STATE IMAGING SYSTEM - A solid state imaging device according to an embodiment includes: an imaging element formed on a semiconductor substrate, and including pixel blocks each having pixels; a main lens forming an image of a subject on an imaging plane; a microlens array including microlenses corresponding to the pixel blocks, the microlens array reducing an image to be formed on the imaging plane by Nf times or less and forming reduced images on the pixel blocks corresponding to the respective microlenses; and an image processing unit enlarging and synthesizing the reduced images formed by the microlenses, the solid state imaging device meeting conditions of an expression MTF | 08-28-2014 |
20140284746 | SOLID STATE IMAGING DEVICE AND PORTABLE INFORMATION TERMINAL - A solid state imaging device according to an embodiment includes: an imaging element including a plurality of pixels; a bonding layer formed to be in contact with the imaging element; a first microlens array formed to be in contact with the bonding layer, and including a plurality of first microlenses with a refractive index higher than a refractive index of the bonding layer; and a main lens located above the first microlens array. | 09-25-2014 |
20140285671 | INFRARED IMAGING DEVICE AND INFRARED IMAGING MODULE - An infrared imaging module according to an embodiment includes: an infrared imaging element including a semiconductor substrate having a recessed portion, and a pixel portion formed on the recessed portion, the pixel portion converting infrared rays to electrical signals; and a lid including a lens portion facing the pixel portion, and a flat plate portion surrounding the lens portion, the flat plate portion being bonded to the semiconductor substrate. | 09-25-2014 |
20140285693 | MICROLENS ARRAY UNIT AND SOLID STATE IMAGING DEVICE - A microlens array unit according to an embodiment includes: a substrate; a first group of microlenses including first microlenses having a convex shape and a first focal length, the first group of microlenses being arranged on the substrate; and a second group of microlenses including second microlenses having a convex shape and a second focal length different from the first focal length, the second group of microlenses being arranged on the substrate, a first imaging plane of the first group of microlenses and a second imaging plane of the second group of microlenses being parallel to each other, a distance between the first and second imaging planes in a direction perpendicular to the first imaging plane being 20% or less of the first focal length, and images of the first microlenses projected on the substrate not overlapping images of the second microlenses projected on the substrate. | 09-25-2014 |
20140285703 | LIQUID CRYSTAL OPTICAL DEVICE, SOLID STATE IMAGING DEVICE, PORTABLE INFORMATION TERMINAL, AND DISPLAY DEVICE - A liquid crystal optical device includes: a first electrode unit including a first substrate transparent to light, a light-transmitting layer formed on the first substrate, and a first electrode formed on the light-transmitting layer and being transparent to light, the light-transmitting layer including recesses formed on a surface facing the first electrode, arranged in a first direction, and extending in a second direction; a second electrode unit including a second substrate, the second substrate being transparent to light, and two second electrodes formed on the second substrate, the second electrodes being arranged in the second direction and extending along the first direction; a liquid crystal layer located between the first and second electrode units; a first polarizing plate located on an opposite side of the second electrode unit from the liquid crystal layer; and a drive unit that applies voltages to the first and second electrodes. | 09-25-2014 |
20140285708 | SOLID STATE IMAGING DEVICE, PORTABLE INFORMATION TERMINAL, AND DISPLAY DEVICE - A solid state imaging device according to an embodiment includes: a liquid crystal optical element including a first electrode having a first recess and a projecting portion surrounding the first recess on a first surface, a second electrode facing the first surface of the first electrode, a filling film located between the first recess of the first electrode and the second electrode, and a liquid crystal layer located between the filling film and the second electrode; an imaging lens facing the second electrode to form an image of a subject on an imaging plane; and an imaging element facing the first recess, the imaging element having a pixel block having a plurality of pixels. | 09-25-2014 |
20140368184 | ELECTROMAGNETIC WAVE SIGNAL PROCESSOR AND ELECTROMAGNETIC WAVE DETECTOR - There is provided an electromagnetic wave signal processor configured to process an input pulse signal corresponding to an electromagnetic wave, comprising a signal processing unit including: a peak detecting circuit to detect peak values of each amplitude of the input pulse signal; an AD converter to convert the peak values into digital signals; a memory device comprising memory cells each having an address assigned in accordance with each of values capable of being taken by the digital signals of the peak values, and being able to have any one of a plurality of internal states representing detection frequencies of the peak values; and a writing circuit to change the internal state in the memory cell that has the address corresponding to the value of each digital signal converted by the AD converter, so as to increment the detection frequency represented by the internal state. | 12-18-2014 |
20150084802 | SIGNAL PROCESSING DEVICE AND SIGNAL PROCESSING METHOD - According to an embodiment, a signal processing device includes an integrator, a setting unit, and an analog-to-digital converter. The integrator is configured to integrate an electrical charge corresponding to electromagnetic waves. The integrator includes a capacitor configured to store the electrical charge corresponding to the electromagnetic waves and a discharging circuit configured to discharge the capacitor. The setting unit is configured to set a period of integration of the electrical charge with respect to the integrator. The analog-to-digital converter includes a comparator configured to compare an integration output and a threshold value and a counter configured to output, as digital data of the electrical charge, the number of times for which a value of the integration output becomes not less than the threshold value. The converter is configured to discharge the capacitor during the period of integration by supplying a comparison output of the comparator to the discharging circuit. | 03-26-2015 |
20150085985 | SIGNAL PROCESSING DEVICE AND SIGNAL PROCESSING METHOD - According to an embodiment, a signal processing device includes an integrator, a first analog-to-digital converter, and a histogram creator. The integrator is configured to integrate an electrical charge corresponding to electromagnetic waves. The first analog-to-digital converter is configured to perform an analog-to-digital conversion operation that generates digital data of the electrical charge using an integration output from the integrator, on a parallel with an integration operation performed by the integrator. The histogram creator is configured to create a histogram that represents an energy distribution of the electromagnetic waves, from the digital data generated by the first analog-to-digital converter. | 03-26-2015 |