Patent application number | Description | Published |
20120187452 | SEMICONDUCTOR ELEMENT - According to one embodiment, the semiconductor element includes a first semiconductor layer. The first semiconductor layer contains Al | 07-26-2012 |
20130240899 | NITRIDE SEMICONDUCTOR DEVICE - According to one embodiment a nitride semiconductor device includes a first, a second and a third semiconductor layer, a first and a second main electrode and a control electrode. The first layer made of a nitride semiconductor of a first conductivity type is provided on a substrate. The second layer made of a nitride semiconductor of a second conductivity type is provided on the first layer. The third layer made of a nitride semiconductor is provided on the second layer. The first electrode is electrically connected with the second layer. The second electrode is provided at a distance from the first electrode and electrically connected with the second layer. The control electrode is provided within a first trench via an insulating film. The first trench is disposed between the first and the second main electrodes, penetrates the third and the second layers, and reaches the first layer. | 09-19-2013 |
20140035004 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer provided on the first nitride semiconductor layer and formed of a non-doped or n-type nitride semiconductor having a band gap wider than that of the first nitride semiconductor layer, a heterojunction field effect transistor having a source electrode, a drain electrode, and a gate electrode, a Schottky barrier diode having an anode electrode and a cathode electrode, and first and second element isolation insulating layers. The first element isolation insulating layer has a first end contacting with the drain electrode and the anode electrode, and a second end located in the first nitride semiconductor layer. The second element isolation insulating layer has a third end contacting with the cathode electrode, and a fourth end located in the first nitride semiconductor layer. | 02-06-2014 |
20140246700 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion. | 09-04-2014 |
20140284610 | SEMICONDUCTOR DEVICE - According to an embodiment, a semiconductor device includes a conductive substrate, a Schottky barrier diode, and a field-effect transistor. The Schottky barrier diode is mounted on the conductive substrate and includes an anode electrode and a cathode electrode. The anode electrode is electrically connected to the conductive substrate. The field-effect transistor is mounted on the conductive substrate and includes a source electrode, a drain electrode, and a gate electrode. The source electrode of the field-effect transistor is electrically connected to the cathode electrode of the Schottky barrier diode. The gate electrode of the field-effect transistor is electrically connected to the anode electrode of the Schottky barrier diode. | 09-25-2014 |
20150034903 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a first layer made of a group III nitride semiconductor of a first conductivity type, a second layer made of a group III nitride semiconductor of a second conductivity type on a first surface of the first layer, a third layer made of a group III nitride semiconductor of the first conductivity type on a first region of a surface of the second layer, a gate electrode extending through the second layer and the third layer and the first surface of the first layer, and insulated from the first, second, and third layers, a first electrode in contact with the third layer, a second electrode in contact with a second region of the surface of the second layer that is different from the first region, and a third electrode provided on a side of a second surface of the first layer. | 02-05-2015 |
20150076506 | SEMICONDUCTOR DEVICE - This disclosure provides a semiconductor device which includes a GaN-based semiconductor layer having a surface with an angle of not less than 0 degree and not more than 5 degrees with respect to an m-plane or an a-plane, a first electrode provided above the surface and having a first end, and a second electrode provided above the surface to space apart from the first electrode, having a second end facing the first end, and a direction of a segment connecting an arbitrary point of the first end and an arbitrary point of the second end is different from a c-axis direction of the GaN-based semiconductor layer. | 03-19-2015 |
20150263103 | SEMICONDUCTOR DEVICE - A semiconductor device according to an embodiment includes a first semiconductor layer including a first nitride semiconductor, a second semiconductor layer on the first semiconductor layer including a second nitride semiconductor, a source electrode, a drain electrode, a first gate electrode provided on the second semiconductor layer between the source electrode and the drain electrode having a schottky junction, a second gate electrode provided above the second semiconductor layer intervening an insulating film, provided between the source electrode and the first gate electrode, electrically connected with the first gate electrode, and a third gate electrode provided above the second semiconductor layer intervening an insulating film, provided between the drain electrode and the first gate electrode, electrically connected with the first gate electrode. A first transistor structure has a first threshold value, a second transistor structure has a second threshold value, and a third transistor structure has a third threshold value. | 09-17-2015 |