Patent application number | Description | Published |
20080251729 | SENSOR AND IMAGE PICKUP DEVICE - A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode. | 10-16-2008 |
20080290286 | SENSOR AND IMAGE PICKUP DEVICE - A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode. | 11-27-2008 |
20090146072 | SENSOR AND IMAGE PICKUP DEVICE - A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode. | 06-11-2009 |
20100295041 | DISPLAY - An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous. | 11-25-2010 |
20110012107 | FIELD EFFECT TRANSISTOR - A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10 | 01-20-2011 |
20110017996 | LIGHT-EMITTING DEVICE - An Object of the Present Invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous. | 01-27-2011 |
20110024741 | INTEGRATED CIRCUITS UTILIZING AMORPHOUS OXIDES - Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 10 | 02-03-2011 |
20140230724 | METHOD FOR FORMING MAGNESIUM OXIDE THIN FILM AND PROCESSED PLATE - A method for depositing a magnesium oxide thin film on a substrate by a laser abrasion method using a sintered body or single crystal of magnesium oxide as a target. In this method, a flat processed film made of magnesium oxide having a (111) plane as its front surface is prepared, using a substrate made of strontium titanate having a (111) plane as its principal surface or yttria-stabilized zirconia having a (111) plane as its principal surface, by directly depositing a film on the principal surface of the substrate and epitaxially growing the film. | 08-21-2014 |
20140299172 | Thermoelectric Material, Method for Producing the Same, and Thermoelectric Conversion Module Using the Same - A thermoelectric material includes a semiconductor substrate, a semiconductor oxide film formed on the substrate, and a thermoelectric layer provided on the oxide film. The semiconductor oxide film has a first nano-opening formed therein. The thermoelectric layer has such a configuration that semiconductor nanodots are piled up on or above the first nano-opening so as to form a particle packed structure. At least some of the nanodots each have a second nano-opening formed in its surface, and are connected to each other through the second nano-opening with their crystal orientation aligned. The thermoelectric material is produced through steps of oxidizing the substrate to form the semiconductor oxide film thereon, forming the first nano-opening in the oxide film, and epitaxially growing to pile up the plurality of nanodots on the first nano-opening. | 10-09-2014 |
20140349854 | IRON-BASED SUPERCONDUCTING MATERIAL, IRON-BASED SUPERCONDUCTING LAYER, IRON-BASED SUPERCONDUCTING TAPE WIRE MATERIAL, AND IRON-BASED SUPERCONDUCTING WIRE MATERIAL - Provided is an iron-based superconducting material including an iron-based superconductor having a crystal structure of ThCr | 11-27-2014 |