Patent application number | Description | Published |
20080269614 | CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER (cMUT) DEVICE AND METHOD OF CONTROLLING THE SAME - A capacitive micromachined ultrasonic transducer (cMUT) device, comprising: a cMUT formed on a semiconductor substrate; a DC high-voltage generation unit that is provided on the semiconductor substrate and that is for generating a DC high-voltage signal to be superposed on a driving signal for the cMUT; a driving signal generation unit that is provided on the semiconductor substrate and that is for generating the driving signal; and a superposition unit that is provided on the semiconductor substrate and that is for branching the DC high-voltage signal output from the DC high-voltage generation unit and for superposing one of the branched DC high-voltage signals on the other of the branched DC high-voltage signals via the driving signal generation unit. | 10-30-2008 |
20080294055 | CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER (cMUT) DEVICE AND IN-BODY-CAVITY DIAGNOSTIC ULTRASOUND SYSTEM - A capacitive micromachined ultrasonic transducer (cMUT) device, comprises: a cMUT obtained by processing a silicon substrate by using a silicon micromachining technique; and an oscillator circuit having the cMUT as a capacitor, and outputting a frequency modulation signal by modulating a frequency of an oscillation signal to be output on the basis of a change of capacitance of the cMUT. | 11-27-2008 |
20090001853 | ULTRASOUND TRANSDUCER MANUFACTURED BY USING MICROMACHINING PROCESS, ITS DEVICE, ENDOSCOPIC ULTRASOUND DIAGNOSIS SYSTEM THEREOF, AND METHOD FOR CONTROLLING THE SAME - An ultrasound transducer manufactured by using a micromachining process comprises: a first electrode into which a control signal for transmitting ultrasound is input; a substrate on which the first electrode is formed; a second electrode that is a ground electrode facing the first electrode with a prescribed space between the first and second electrodes; a membrane on which the second electrode is formed and which vibrates and generates the ultrasound when a voltage is applied between the first and second electrodes; a piezoelectric film contacting the membrane; and a third electrode electrically continuous to the piezoelectric film. | 01-01-2009 |
20090076393 | ULTRASOUND TRANSDUCER AND ENDOSCOPIC ULTRASOUND DIAGNOSIS SYSTEM INCLUDING THE SAME - A micromachined ultrasound transducer including a plurality of ultrasound transducer cells each of which includes a substrate on which a bottom electrode is formed, and a membrane provided apart from the substrate and having an upper electrode formed thereon, said ultrasound transducer generating ultrasound with the membrane vibrating when voltage is applied between the bottom electrode and the upper electrode, comprises: a vibration propagation suppression unit suppressing propagation of vibration of said each ultrasound transducer cell to an adjacent ultrasound transducer cell. | 03-19-2009 |
20100201222 | Ultrasound Transducer Manufactured by Using Micromachining Process, its Device, Endoscopic Ultrasound Diagnosis System Thereof, and Method for Controlling the Same - An ultrasound transducer manufactured by using a micromachining process comprises: a first electrode into which a control signal for transmitting ultrasound is input; a substrate on which the first electrode is formed; a second electrode that is a ground electrode facing the first electrode with a prescribed space between the first and second electrodes; a membrane on which the second electrode is formed and which vibrates and generates the ultrasound when a voltage is applied between the first and second electrodes; a piezoelectric film contacting the membrane; and a third electrode electrically continuous to the piezoelectric film. | 08-12-2010 |
20110213592 | CAPACITIVE ULTRASONIC TRANSDUCER AND ENDO CAVITY ULTRASONIC DIAGNOSIS SYSTEM USING THE SAME - A capacitive ultrasonic transducer (c-MUT) comprising a silicon substrate and a transducer element which comprises transducer cells, each of which is constituted by a first electrode equipped on the top surface of the silicon substrate, a second electrode placed opposite to the first electrode with a predetermined gap therefrom and a membrane for supporting the second electrode, wherein a trench is equipped between the adjacent transducers and a conductive film is formed in the trench. | 09-01-2011 |