Patent application number | Description | Published |
20080308906 | GaN SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING GaN SUBSTRATE - A GaN substrate having a large diameter of two inches or more by which a semiconductor device such as a light emitting element with improved characteristics such as luminance efficiency, an operating life and the like can be obtained at low cost industrially, a substrate having an epitaxial layer formed on the GaN substrate, a semiconductor device, and a method of manufacturing the GaN substrate are provided. A GaN substrate has a main surface and contains a low-defect crystal region and a defect concentrated region adjacent to low-defect crystal region. Low-defect crystal region and defect concentrated region extend from the main surface to a back surface positioned on the opposite side of the main surface. A plane direction [0001] is inclined in an off-angle direction with respect to a normal vector of the main surface. | 12-18-2008 |
20100220761 | GALLIUM NITRIDE-BASED SEMICONDUCTOR OPTICAL DEVICE, METHOD OF FABRICATING GALLIUM NITRIDE-BASED SEMICONDUCTOR OPTICAL DEVICE, AND EPITAXIAL WAFER - A gallium nitride-based semiconductor optical device is provided that includes an indium-containing gallium nitride-based semiconductor layer that exhibit low piezoelectric effect and high crystal quality. The gallium nitride-based semiconductor optical device | 09-02-2010 |
20110057197 | GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THEREOF AND GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A GaN single crystal substrate has a main surface with an area of not less than 10 cm | 03-10-2011 |
20120034763 | Method of Manufacturing Nitride Semiconductor Substrate - The present invention provides a method of manufacturing a nitride semiconductor substrate capable of efficiently manufacturing a nitride semiconductor substrate having a nonpolar plane as a major surface in which polycrystalline growth is minimized. A method of manufacturing a GaN substrate, which is a nitride semiconductor substrate, includes steps (S | 02-09-2012 |
20120074403 | METHOD FOR GROWING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE - The present invention is to provide GaN crystal growing method for growing a GaN crystal with few stacking faults on a GaN seed crystal substrate having a main surface inclined at an angle of 20° to 90° from the (0001) plane, and also to provide a GaN crystal substrate with few stacking faults. A method for growing a GaN crystal includes the steps of preparing a GaN seed crystal substrate | 03-29-2012 |
20120329245 | Group III Nitride Crystal and Method for Producing the Same - A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates | 12-27-2012 |
20130134434 | NITRIDE SEMICONDUCTOR SUBSTRATE - A nitride semiconductor device includes a main surface and an indicator portion. The main surface is a plane inclined by at least 71° and at most 79° in a [1-100] direction from a (0001) plane or a plane inclined by at least 71° and at most 79° in a [−1100] direction from a (000-1) plane. The indicator portion indicates a (−1017) plane, a (10-1-7) plane, or a plane inclined by at least −4° and at most 4° in the [1-100] direction from these planes and inclined by at least −0.5° and at most 0.5° in a direction orthogonal to the [1-100] direction. | 05-30-2013 |
20130337632 | Method for Producing Group III Nitride Crystal - A method for producing a Group III nitride crystal includes the steps of cutting a plurality of Group III nitride crystal substrates | 12-19-2013 |
20140061668 | GaN Single Crystal Substrate and Method of Manufacturing Thereof and GaN-based Semiconductor Device and Method of Manufacturing Thereof - A GaN single crystal substrate has a main surface with an area of not less than 10 cm | 03-06-2014 |
20140369920 | Group III Nitride Crystal Substrates and Group III Nitride Crystal - Group III nitride crystal produced by cutting, from III nitride bulk crystal, a plurality of Group III nitride crystal substrates with major-surface plane orientation misoriented five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates adjacent to each other such that their major surfaces are parallel to each other and such that their [0001] directions coincide with each other, and growing a Group III nitride crystal on the major surfaces. The Group III nitride crystal substrates are further characterized by satisfying at least either an oxygen-atom concentration of 1×10 | 12-18-2014 |