Patent application number | Description | Published |
20140077292 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a semiconductor device includes a semiconductor substrate including a drain layer of a first conductivity type and a base layer of a second conductivity type provided on the drain layer, a gate electrode including a first portion formed in the semiconductor substrate, a gate insulating layer provided between the gate electrode and the semiconductor substrate, an upper insulating layer formed on the gate electrode, a source layer of the first conductivity type that is provided on a sidewall of the upper insulating layer and whose width increases towards the base layer, and a source electrode provided on the source layer. | 03-20-2014 |
20150069592 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SAME, AND APPLICATION BOARD MOUNTED WITH SAME - In one embodiment, a semiconductor device includes a lead frame including an island portion and a terminal portion separated from the island portion. The device further includes a semiconductor chip mounted on the island portion and including an electrode. The device further includes an insulating layer disposed on the semiconductor chip and having an opening to expose at least a part of the electrode. The device further includes a connector covering the electrode exposed through the opening and electrically connecting the electrode and the terminal portion. | 03-12-2015 |
20150069598 | HEAT DISSIPATION CONNECTOR AND METHOD OF MANUFACTURING SAME, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME, AND SEMICONDUCTOR MANUFACTURING APPARATUS - In one embodiment, a heat dissipation connector mounted on a semiconductor chip and sealed up with a molding resin along with the semiconductor chip and a lead frame includes a heat dissipation portion configured to have a block shape, and have an upper face exposed out of the molding resin. The connector further includes a connecting portion configured to extend from a first side face of the heat dissipation portion, and electrically connect an electrode arranged on the semiconductor chip to the lead frame. The heat dissipation portion and the connecting portion are integrally made of the same metal sheet. | 03-12-2015 |
Patent application number | Description | Published |
20150028413 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a method for manufacturing a semiconductor device includes: forming a plurality of trenches; forming a gate insulating film; burying a gate electrode; burying an insulating member; projecting the insulating member; forming a base layer; forming a mask film; forming a first semiconductor layer; forming a carrier ejection layer; forming a first electrode; and forming a second electrode. The projecting includes projecting the insulating member from the upper surface of the semiconductor substrate by removing an upper layer portion of the semiconductor substrate. The mask film is formed so as to cover the projected insulating member. The forming the first semiconductor layer includes forming a first semiconductor layer of the first conductivity type in an upper layer portion of the base layer by doping the base layer with impurity, the upper layer portion having a lower surface below an upper end of the gate electrode. | 01-29-2015 |
20150263162 | SEMICONDUCTOR DEVICE - In one embodiment, a semiconductor device includes first, second, third, fourth, fifth and sixth electrodes extending in a first direction, the third and fourth electrodes being provided to sandwich the first electrode, the fifth and sixth electrodes being provided to sandwich the second electrode, the first, second, fifth and sixth electrodes being electrically connected with one another, and the third and fourth electrodes being electrically connected with each other and electrically independent from the first, second, fifth and sixth electrodes. The device further includes a semiconductor layer provided between one of the third and fourth electrodes and one of the fifth and sixth electrodes. The device further includes a first interconnect provided on the second, fifth and sixth electrodes and on the semiconductor layer. | 09-17-2015 |
20160071940 | SEMICONDUCTOR DEVICE - According to an embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a first electrode over the first semiconductor layer, second and third electrodes extending in the first semiconductor layer in a direction from the first electrode to the first semiconductor layer, a second semiconductor layer of a second conductivity type on the first semiconductor layer. The device further includes third semiconductor layers of the second conductivity type between the first semiconductor layer and each of the second electrode and the third electrode, first insulating films between one of the third semiconductor layers and the second electrode and between the other of the third semiconductor layers and the third electrode, a fourth semiconductor layer of the first conductivity type on the second semiconductor layer, and a fourth electrode extending through the fourth semiconductor layer and the second semiconductor layer to the first semiconductor layer. | 03-10-2016 |
20160079374 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor device includes forming a first electrode on a lower portion of a trench that is formed on a semiconductor layer and having a first insulating film between the first electrode and the semiconductor layer; forming a second insulating film that covers an inner surface of an upper portion of the trench, forming a resist film that extends into the upper portion of the trench on the second insulating film, removing the second insulating film between the resist film and a side wall of the trench to leave a portion of the second insulating film on the first electrode, forming a third insulating film on a side wall of an upper portion of the trench, and forming a second electrode on the first electrode in an inner portion of the second insulating film. | 03-17-2016 |