Patent application number | Description | Published |
20090026440 | Nitride semiconductor light-emitting element - A nitride semiconductor light-emitting element | 01-29-2009 |
20090057646 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate | 03-05-2009 |
20090057688 | OPTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - To provide an elemental technique for improving the emission intensity of deep ultraviolet light from a light emitting layer made of an AlGaInN-based material, in particular, an AlGaN-based material. First, an AlN layer is grown on a sapphire surface. The AlN layer is grown under a NH | 03-05-2009 |
20100144078 | OPTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - To provide an elemental technique for improving the emission intensity of deep ultraviolet light from a light emitting layer made of an AlGaInN-based material, in particular, an AlGaN-based material. First, an AlN layer is grown on a sapphire surface. The AlN layer is grown under a NH | 06-10-2010 |
20100219395 | Optical Semiconductor Device and Method of Manufacturing the Same - Devices and techniques related to UV light-emitting devices that can be implemented in ways that improve the light-emitting efficiency of an UV light-emitting device using a group III nitride semiconductor. | 09-02-2010 |
20120248456 | NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - The nitride semiconductor light-emitting element of the invention has a stacked structure of a buffer layer, an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer, on one surface side of a single crystal substrate of a sapphire substrate. A nitride semiconductor multilayer structure as the buffer layer includes: a plurality of island-like nuclei formed of AlN and formed on the one surface of the single crystal substrate; a first nitride semiconductor layer formed of an AlN layer and formed on the one surface side of the single crystal substrate so as to fill gaps between adjacent nuclei and to cover all the nuclei; and a second nitride semiconductor layer formed of an AlN layer and formed on the first nitride semiconductor layer. | 10-04-2012 |
20130069034 | LIGHT-EMITTING ELEMENT HAVING NITRIDE SEMICONDUCTOR MULTIQUANTUM BARRIER, AND PROCESS FOR PRODUCTION THEREOF | 03-21-2013 |
20140167066 | LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting element including, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices. An interface between the two systems (structures) satisfies Bragg scattering conditions, and the photonic crystal periodic structure has a photonic band gap. | 06-19-2014 |
20140209857 | METHOD OF MANUFACTURE FOR NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, WAFER, AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of MN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step. | 07-31-2014 |