Patent application number | Description | Published |
20080206967 | METHOD FOR FORMING SEMICONDUCTOR DEVICE - A thin semiconductor film is crystallized in a high yield by being irradiated with laser light. An insulating film, a semiconductor film, an insulating film, and a semiconductor film are stacked in this order over a substrate. Laser light irradiation is performed from above the substrate to melt the semiconductor films of a lower layer and an upper layer, whereby the semiconductor film of the lower layer is crystallized. With the laser light irradiation, the semiconductor film of the upper layer changes to a liquid state, thereby reflecting the laser light and preventing the semiconductor film of the lower layer from being overheated with the laser light. Further, by melting the semiconductor film of the upper layer as well, time for melting the semiconductor film of the lower layer can be extended. | 08-28-2008 |
20080210945 | Thin film transistor, manufacturing method thereof, and semiconductor device - By a laser crystallization method, a crystalline semiconductor film in which grain boundaries are all in one direction is provided as well as a manufacturing method thereof. In crystallizing a semiconductor film formed over a substrate with linear laser light, a phase-shift mask in which trenches are formed in a stripe form is used. The stripe-form trenches formed in the phase-shift mask are formed so as to make a nearly perpendicular angle with a major axis direction of the linear laser light. CW laser light is used as the laser light, and a scanning direction of the laser light is nearly parallel to a direction of the stripe-form trenches (grooves). By changing luminance of the laser light periodically in the major axis direction, a crystal nucleation position in a semiconductor that is completely melted can be controlled. | 09-04-2008 |
20080217563 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS - The present invention is a semiconductor manufacturing apparatus by which an impurity can be introduced into an active layer at a low and a stable concentration in order to form semiconductor elements that have little variation in threshold voltage. In the semiconductor manufacturing apparatus that includes a washing unit; an impurity introduction unit used to attach the impurity to the surface of the semiconductor film; a laser crystallization unit used to crystallize the semiconductor film to which an impurity has been attached; and transfer robots, the amount of the impurity attached to the semiconductor film is controlled by the length of time of exposure of the substrate in the impurity introduction unit, and the semiconductor film is crystallized while a crystalline semiconductor film that contains an impurity at low concentration is formed simultaneously by laser crystallization. | 09-11-2008 |
20080224274 | Semiconductor device, semiconductor display device, and manufacturing method of semiconductor device - To achieve high performance of a semiconductor integrated circuit depending on not only a microfabrication technique but also another way. In addition, to achieve low power consumption of a semiconductor integrated circuit. A semiconductor device is provided in which crystal faces and/or crystal axes of single-crystalline semiconductor layers of a first conductive MISFET and a second conductive MISFET are different. The crystal faces and/or crystal axes are arranged so that mobility of carriers flowing in channel length directions in the respective MISFETs is increased. Such a structure can increase mobility of carriers flowing through channels of the MISFETs and high speed operation of a semiconductor integrated circuit can be achieved. Further, low voltage driving becomes possible, and low power consumption can be realized. | 09-18-2008 |
20080265323 | Semiconductor Device and Manufacturing Method Thereof - An object is to provide a semiconductor device in which, through a simpler process, junction capacitance and power consumption can be reduced more than a conventional semiconductor device, and a manufacturing method thereof. An insulating film including an opening is formed over a base substrate and a part of a bond substrate is transferred to the base substrate, with the insulating film interposed therebetween, whereby a semiconductor film including a cavity between the semiconductor film and the base substrate is formed over the base substrate. Then, a semiconductor device including a semiconductor element such as a transistor is manufactured using the semiconductor film. The transistor includes a cavity between the base substrate and the semiconductor film used as an active layer. One cavity may be provided or a plurality of cavities may be provided. | 10-30-2008 |
20080286911 | Method for manufacturing semiconductor device - To provide a low-cost high performance semiconductor device and a method for manufacturing the semiconductor device, a separate single-crystal semiconductor layer having a first region and a non-single-crystal semiconductor layer having a second region are provided over a substrate. Further, it is preferable that a cap film is formed over either the separate single-crystal semiconductor layer or the non-single-crystal semiconductor layer, and the first region and the second region are irradiated with a laser beam by applying the laser beam from above the cap film. | 11-20-2008 |
20080286952 | Manufacturing method of SOI substrate and manufacturing method of semiconductor device - A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate. | 11-20-2008 |
20080299743 | Manufacturing method of semiconductor device - To provide a semiconductor device with high performance and low cost and a manufacturing method thereof. A first region including a separated (cleavage) single-crystal semiconductor layer and a second region including a non-single-crystal semiconductor layer are provided over a substrate. It is preferable that laser beam irradiation be performed to the separated (cleavage) single-crystal semiconductor layer in an inert atmosphere, and laser beam irradiation be performed to the non-single-crystal semiconductor layer in an air atmosphere at least once. | 12-04-2008 |
20080308866 | Semiconductor Device and Method for Manufacturing the Same - To provide a semiconductor device having lower junction capacitance, which can be manufactured with lower power consumption through a simpler process as compared with conventional, a semiconductor device includes a base substrate; a semiconductor film formed over the base substrate; a gate insulating film formed over the semiconductor film; and an electrode formed over the gate insulating film. The semiconductor film has a channel formation region which overlaps with the electrode with the gate insulating film interposed therebetween, a cavity is formed between a recess included in the semiconductor film and the base substrate, and the channel formation region is in contact with the cavity on the recess. | 12-18-2008 |
20080318367 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To suppress an effect of metal contamination caused in manufacturing an SOI substrate. After forming a damaged region by irradiating a semiconductor substrate with hydrogen ions, the semiconductor substrate is bonded to a base substrate. Heat treatment is performed to cleave the semiconductor substrate; thus an SOI substrate is manufactured. Even if metal ions enter the semiconductor substrate together with the hydrogen ions in the step of hydrogen ion irradiation, the effect of metal contamination can be suppressed by the gettering process. Accordingly, the irradiation with hydrogen ions can be performed positively by an ion doping method. | 12-25-2008 |
20090002591 | Liquid crystal display device - An object is to propose a method of manufacturing, with high mass productivity, liquid crystal display devices having thin film transistors with highly reliable electric characteristics. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions. | 01-01-2009 |
20090004823 | Manufacturing method of semiconductor - A manufacturing method of a semiconductor device in which a space between semiconductor films transferred to a plurality of places can be made small. Transfer of a semiconductor film from a bond substrate to a base substrate is carried out a plurality of times. In the case where a semiconductor film transferred first and a semiconductor film transferred later are provided adjacently, the latter transfer is carried out using a bond substrate with its end portion partially removed. The width in a perpendicular direction to the bond substrate used for the later transfer, of the region of the bond substrate corresponding to the removed end portion is larger than the thickness of the semiconductor film which is transferred first. | 01-01-2009 |
20090017598 | Method of manufacturing semiconductor device - To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first. | 01-15-2009 |
20090023236 | Method for manufacturing display device - A method for manufacturing display devices including thin film transistors with high reliability in a high yield is provided. A gate insulating film is formed over a gate electrode; a microcrystalline semiconductor is formed over the gate insulating film; the microcrystalline semiconductor film is irradiated with a laser beam from the surface side thereof, whereby the crystallinity of the microcrystalline semiconductor film is improved. Then, a thin film transistor is formed using the microcrystalline semiconductor film whose crystallinity is improved. Further, a display device including the thin film transistor is manufactured. | 01-22-2009 |
20090046757 | Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device - An object is to provide a laser irradiation apparatus and a laser irradiation method with which positions of crystal grain boundaries generated at the time of laser crystallization can be controlled. Laser light emitted from a laser | 02-19-2009 |
20090061573 | Methods for manufacturing thin film transistor and display device - The present invention provides a method for manufacturing a highly reliable semiconductor device with a small amount of leakage current. In a method for manufacturing a thin film transistor, etching is conducted using a resist mask to form a back channel portion in the thin film transistor, the resist mask is removed, a part of the back channel is etched to remove etching residue and the like left over the back channel portion, whereby leakage current caused by the residue and the like can be reduced. The etching step of the back channel portion can be conducted by dry etching using non-bias. | 03-05-2009 |
20090140250 | SEMICONDUCTOR DEVICE - An object is to reduce off-current of a thin film transistor. Another object is to improve electric characteristics of a thin film transistor. Further, it is still another object to improve image quality of a display device using the thin film transistor. An aspect of the present invention is a thin film transistor including a semiconductor film formed over a gate electrode and in an inner region of the gate electrode which does not reach an end portion of the gate electrode, with a gate insulating film interposed therebetween, a film covering at least a side surface of the semiconductor film, and a pair of wirings over the film covering the side surface of the semiconductor film; in which an impurity element serving as a donor is added to the semiconductor film. | 06-04-2009 |
20090140256 | THIN FILM TRANSISTOR AND SEMICONDUCTOR DEVICE - An impurity element imparting one conductivity type is included in a layer close to a gate insulating film of layers with high crystallinity, so that a channel formation region is formed not in a layer with low crystallinity which is formed at the beginning of film formation but in a layer with high crystallinity which is formed later in a microcrystalline semiconductor film. Further, the layer including an impurity element is used as a channel formation region. Furthermore, a layer which does not include an impurity element imparting one conductivity type or a layer which has an impurity element imparting one conductivity type at an extremely lower concentration than other layers, is provided between a pair of semiconductor films including an impurity element functioning as a source region and a drain region and the layer including an impurity element functioning as a channel formation region. | 06-04-2009 |
20090142909 | METHOD FOR MANUFACTURING MICROCRYSTALLINE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR HAVING MICROCRYSTALLINE SEMICONDUCTOR FILM, AND PHOTOELECTRIC CONVERSION DEVICE HAVING MICROCRYSTALLINE SEMICONDUCTOR FILM - A method for forming a microcrystalline semiconductor film over a base formed of a different material, which has high crystallinity in the entire film and at an interface with the base, is proposed. Further, a method for manufacturing a thin film transistor including a microcrystalline semiconductor film with high crystallinity is proposed. Furthermore, a method for manufacturing a photoelectric conversion device including a microcrystalline semiconductor film with high crystallinity is proposed. By forming crystal nuclei with high density and high crystallinity over a base film and then growing crystals in a semiconductor from the crystal nuclei, a microcrystalline semiconductor film which has high crystallinity at an interface with the base film, which has high crystallinity in crystal grains, and which has high adhesion between the adjacent crystal grains is formed. | 06-04-2009 |
20090152559 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF DISPLAY DEVICE - A manufacturing method of a thin film transistor and a display device using a small number of masks is provided. A first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked. Then, a resist mask having a recessed portion is formed thereover using a multi-tone mask. First etching is performed to form a thin-film stack body, and second etching in which the thin-film stack body is side-etched is performed to form a gate electrode layer. The resist is made to recede, and then, a source electrode, a drain electrode, and the like are formed; accordingly, a thin film transistor is manufactured. | 06-18-2009 |
20090218568 | THIN FILM TRANSISOTR AND DISPLAY DEVICE - To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added. | 09-03-2009 |
20090218572 | THIN-FILM TRANSISTOR AND DISPLAY DEVICE - A thin-film transistor in which problems with ON-state current and OFF-state current are solved, and a thin-film transistor capable of high-speed operation. The thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions, provided with a space therebetween so as to be overlapped with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of semiconductor layers in which an impurity element which serves as an acceptor is added, overlapped over the gate insulating layers with the gate electrode and the impurity semiconductor layers, and disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer being in contact with the gate insulating layer and the pair of semiconductor layers and extended between the pair of semiconductor layers. | 09-03-2009 |
20090233389 | METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING DISPLAY DEVICE - A method for manufacturing a thin film transistor and a display device using a small number of masks is provided. A conductive film is formed, a thin-film stack body having a pattern is formed over the conductive film, an opening portion is formed in the thin-film stack body so as to reach the conductive film, a gate electrode layer is formed by processing the conductive film using side-etching, and an insulating layer, a semiconductor layer, and a source and drain electrode layer are formed over the gate electrode layer, whereby a thin film transistor is manufactured. By provision of the opening portion, controllability of etching is improved. | 09-17-2009 |
20090261328 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a thin film transistor which includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which functions as a channel formation region; and a semiconductor layer including an impurity element imparting one conductivity type. The semiconductor layer exists in a state that a plurality of crystalline particles is dispersed in an amorphous silicon and that the crystalline particles have an inverted conical or inverted pyramidal shape. The crystalline particles grow approximately radially in a direction in which the semiconductor layer is deposited. Vertexes of the inverted conical or inverted pyramidal crystal particles are located apart from an interface between the gate insulating layer and the semiconductor layer. | 10-22-2009 |
20090267068 | THIN FILM TRANSISTOR - The thin film transistor includes a gate insulating layer covering a gate electrode, over a substrate having an insulating surface; a semiconductor layer forming a channel formation region, in which a plurality of crystal regions is included in an amorphous structure; an impurity semiconductor layer imparting one conductivity type which forms a source region and a drain region; and a buffer layer formed from an amorphous semiconductor, which is located between the semiconductor layer and the impurity semiconductor layer. The thin film transistor includes the crystal region which includes minute crystal grains and inverted conical or inverted pyramidal grain each of which grows approximately radially from a position away from an interface between the gate insulating layer and the semiconductor layer toward a direction in which the semiconductor layer is deposited in a region which does not reach the impurity semiconductor layer. | 10-29-2009 |
20090311809 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - To provide a manufacturing method of a thin film transistor and a display device with fewer masks than a conventional method. A thin film transistor is manufactured by including the steps of: forming a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film to be stacked; forming a resist mask including three regions with different thicknesses; performing first etching to form a thin-film stack body; performing second etching in which side-etching is performed on the thin-film stack body to form a gate electrode layer; and recessing the resist mask to form a semiconductor layer and a source and drain electrode layer. A resist mask including three regions with different thicknesses can be formed using a four-tone photomask, for example. | 12-17-2009 |
20090321737 | THIN FILM TRANSISTOR - A thin film transistor includes, as a buffer layer, a semiconductor layer which contains nitrogen and includes crystal regions in an amorphous structure between a gate insulating layer and source and drain regions, at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced. | 12-31-2009 |
20090321743 | THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - A thin film transistor includes, as a buffer layer, an amorphous semiconductor layer having nitrogen or an NH group between a gate insulating layer and source and drain regions and at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced. | 12-31-2009 |
20100025675 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film. | 02-04-2010 |
20100025676 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To offer a semiconductor device including a thin film transistor having excellent characteristics and high reliability and a method for manufacturing the semiconductor device without variation. The summary is to include an inverted-staggered (bottom-gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used for a semiconductor layer and a buffer layer is provided between the semiconductor layer and source and drain electrode layers. An ohmic contact is formed by intentionally providing a buffer layer containing In, Ga, and Zn and having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrode layers. | 02-04-2010 |
20100025677 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability and a manufacturing method of the semiconductor device with high mass productivity. The summary is that an inverted-staggered (bottom-gate) thin film transistor is included in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, a channel protective layer is provided in a region that overlaps a channel formation region of the semiconductor layer, and a buffer layer is provided between the semiconductor layer and source and drain electrodes. An ohmic contact is formed by intentionally providing the buffer layer having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrodes. | 02-04-2010 |
20100025678 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained. | 02-04-2010 |
20100025679 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed. | 02-04-2010 |
20100032665 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed. | 02-11-2010 |
20100032666 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device including thin film transistors having high electrical properties and reliability is proposed. Further, a method for manufacturing the semiconductor devices with mass productivity is proposed. The semiconductor device includes a thin film transistor which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, a source electrode layer and a drain electrode layer over the gate insulating layer, a buffer layer over the source electrode layer and the drain electrode layer, and a semiconductor layer over the buffer layer. A part of the semiconductor layer overlapping with the gate electrode layer is over and in contact with the gate insulating layer and is provided between the source electrode layer and the drain electrode layer. The semiconductor layer is an oxide semiconductor layer containing indium, gallium, and zinc. The buffer layer contains a metal oxide having n-type conductivity. The semiconductor layer and the source and drain electrode layers are electrically connected to each other through the buffer layer. | 02-11-2010 |
20100032667 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - One of the objects of the present invention is to provide a thin film transistor using an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn), in which the contact resistance between the oxide semiconductor layer and a source and drain electrodes is reduced, and to provide a method for manufacturing the thin film transistor. An ohmic contact is formed by intentionally providing a buffer layer having a higher carrier concentration than the IGZO semiconductor layer between the IGZO semiconductor layer and the source and drain electrode layers. | 02-11-2010 |
20100032668 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. A metal oxide layer having higher carrier concentration than the semiconductor layer is provided intentionally as the buffer layer between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed. | 02-11-2010 |
20100032679 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - A thin film transistor whose threshold voltage can be controlled and which has a favorable switching characteristic is provided. The thin film transistor includes a first gate electrode layer; a semiconductor layer; a first gate insulating layer provided between the first gate electrode layer and the semiconductor layer; source electrode and drain electrode layers which are provided over the semiconductor layer; a conductive layer covered by the first gate insulating layer and the semiconductor layer and provided so as to overlap with part of the first gate electrode layer; a second gate insulating layer provided so as to cover at least a back channel portion of the semiconductor layer; and a second gate electrode layer provided over the second gate insulating layer so as to overlap with the back channel portion of the semiconductor layer. | 02-11-2010 |
20100035379 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed. | 02-11-2010 |
20100078071 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME - A photoelectric conversion device includes one or more unit cells between a first electrode and a second electrode, in which a semiconductor junction is formed by sequentially stacking: a first impurity semiconductor layer of one conductivity type; an intrinsic non-single-crystal semiconductor layer including an NH group or an NH | 04-01-2010 |
20100079425 | DISPLAY DEVICE - A display device of which frame can be narrowed and of which display characteristics are excellent is provided. In a display device including a switch portion or a buffer portion, a logic circuit portion, and a pixel portion, the pixel portion includes a first inverted staggered TFT and a pixel electrode which is connected to a wiring of the first inverted staggered TFT, the switch portion or the buffer portion includes a second inverted staggered TFT in which a first insulating layer, a semiconductor layer, and a second insulating layer are interposed between a first gate electrode and a second gate electrode, the logic circuit portion includes an inverter circuit including a third inverted staggered thin film transistor and a fourth inverted staggered thin film transistor, and the first to the fourth inverted staggered thin film transistors have the same polarity. The inverter circuit may be an EDMOS circuit. | 04-01-2010 |
20100096631 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which includes a plurality of crystalline regions in an amorphous structure and which forms a channel formation region, in contact with the gate insulating layer; a semiconductor layer including an impurity element imparting one conductivity type, which forms source and drain regions; and a buffer layer including an amorphous semiconductor between the semiconductor layer and the semiconductor layer including an impurity element imparting one conductivity type. The crystalline regions have an inverted conical or inverted pyramidal crystal particle which grows approximately radially in a direction in which the semiconductor layer is deposited, from a position away from an interface between the gate insulating layer and the semiconductor layer. | 04-22-2010 |
20100102313 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced. | 04-29-2010 |
20100102314 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, there occurs a problem that it is difficult to mount an IC chip including a driver circuit for driving the gate and signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. The pixel portion and the driver portion are provided over the same substrate, whereby manufacturing cost can be reduced. | 04-29-2010 |
20100117079 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, there occurs a problem that it is difficult to mount an IC chip including a driver circuit for driving the gate and signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver circuit are provided over the same substrate, manufacturing cost can be reduced. | 05-13-2010 |
20100124804 | METHOD FOR MANUFACTURING THIN FILM TRANSISTOR - An object is to provide a method for manufacturing a thin film transistor having favorable electric characteristics, with high productivity. A gate electrode is formed over a substrate and a gate insulating layer is formed over the gate electrode. A first semiconductor layer is formed over the gate insulating layer by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a rare gas. Next, a second semiconductor layer including an amorphous semiconductor and a microcrystal semiconductor is formed in such a manner that the first semiconductor layer is partially grown as a seed crystal by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a gas containing nitrogen. Then, a semiconductor layer to which an impurity imparting one conductivity is added is formed and a conductive film is formed. Thus, a thin film transistor is manufactured. | 05-20-2010 |
20100127261 | THIN FILM TRANSISTOR - The thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode, an amorphous semiconductor layer over the gate insulating layer, a semiconductor layer including an impurity element imparting one conductivity type over the amorphous semiconductor layer. The amorphous semiconductor layer comprises an NH radical. Defects of the amorphous semiconductor layer are reduced by cross-linking dangling bonds with the NH radical in the amorphous semiconductor layer. | 05-27-2010 |
20100148177 | DISPLAY DEVICE - A display device including an inverter circuit and a switch is provided. The inverter circuit includes a first thin film transistor and a second thin film transistor which have the same conductivity type. The first thin film transistor and the second thin film transistor each include: a gate insulating layer in contact with a gate electrode; a microcrystalline semiconductor layer in contact with the gate insulating layer; a mixed layer in contact with the microcrystalline semiconductor layer; a layer which includes an amorphous semiconductor and is in contact with the mixed layer; and a wiring. A conical or pyramidal microcrystalline semiconductor region and an amorphous semiconductor region filling a space except the conical or pyramidal microcrystalline semiconductor region are included in the mixed layer. | 06-17-2010 |
20100210057 | Method for Manufacturing Thin Film Transistor and Method for Manufacturing Display Device - An object is to provide a method for manufacturing a thin film transistor and a display device with reduced number of masks, in which adverse effects of optical current are suppressed. A manufacturing method comprises forming a stack including, from bottom to top, a light-blocking film, a base film, a first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film; performing first etching on the whole thickness of the stack using a first resist mask formed over it; forming a gate electrode layer by side etching the first conductive film in a second etching; forming a second resist mask over the stack; and performing third etching down to the semiconductor film, and partially etching it, using the second resist mask to form a source and drain electrode layer, a source and drain region, and a semiconductor layer. | 08-19-2010 |
20100210078 | Manufacturing Method of Semiconductor Device - A single crystal semiconductor layer is provided over a base substrate with a second insulating film, a first conductive film, and a first insulating film interposed therebetween; an impurity element having one conductivity type is selectively added to the single crystal semiconductor layer, using a first resist mask; the first resist mask is removed; a second conductive film is formed over the single crystal semiconductor layer; a second resist mask having a depression is formed over the second conductive film; a first etching is performed on the first insulating film, the first conductive film, the second insulating film, the single crystal semiconductor layer, and the second conductive film, using the second resist mask; and a second etching with accompanying side-etching is performed on a part of the first conductive film to form a pattern of a gate electrode layer. | 08-19-2010 |
20100221858 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a semiconductor device with high performance and low cost and a manufacturing method thereof. A first region including a separated (cleavage) single-crystal semiconductor layer and a second region including a non-single-crystal semiconductor layer are provided over a substrate. It is preferable that laser beam irradiation be performed to the separated (cleavage) single-crystal semiconductor layer in an inert atmosphere, and laser beam irradiation be performed to the non-single-crystal semiconductor layer in an air atmosphere at least once. | 09-02-2010 |
20100224879 | THIN FILM TRANSISTOR - A thin film transistor includes a gate insulating layer covering a gate electrode, a semiconductor layer in contact with the gate insulating layer, and impurity semiconductor layers which are in contact with part of the semiconductor layer and which form a source region and a drain region. The semiconductor layer includes a microcrystalline semiconductor layer formed on the gate insulating layer and a microcrystalline semiconductor region containing nitrogen in contact with the microcrystalline semiconductor layer. The thin film transistor in which off-current is small and on-current is large can be manufactured with high productivity. | 09-09-2010 |
20100230677 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - A thin film transistor in which deterioration at initial operation is not likely to be caused and a manufacturing method thereof. A transistor which includes a gate insulating layer at least whose uppermost surface is a silicon nitride layer, a semiconductor layer over the gate insulating layer, and a buffer layer over the semiconductor layer and in which the concentration of nitrogen in the vicinity of an interface between the semiconductor layer and the gate insulating layer, which is in the semiconductor layer is lower than that of the buffer layer and other parts of the semiconductor layer. Such a thin film transistor can be manufactured by exposing the gate insulating layer to an air atmosphere and performing plasma treatment on the gate insulating layer before the semiconductor layer is formed. | 09-16-2010 |
20100230678 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A space is provided under part of a semiconductor layer. Specifically, a structure in which an eaves portion (a projecting portion, an overhang portion) is formed in the semiconductor layer. The eaves portion is formed as follows: a stacked-layer structure in which a conductive layer, an insulating layer, and a semiconductor layer are stacked in this order is etched collectively to determine a pattern of a gate electrode; and a pattern of the semiconductor layer is formed while side-etching is performed. | 09-16-2010 |
20100244034 | THIN FILM TRANSISTOR - A thin film transistor includes a gate electrode; a gate insulating layer which is provided to cover the gate electrode; a semiconductor layer which is provided over the gate insulating layer to overlap with the gate electrode; an impurity semiconductor layer which is partly provided over the semiconductor layer and which forms a source region and a drain region; and a wiring layer which is provided over the impurity semiconductor layer, where a width of the source region and the drain region is narrower than a width of the semiconductor layer, and where the width of the semiconductor layer is increased at least in a portion between the source region and the drain region. | 09-30-2010 |
20100248433 | Method for Manufacturing Thin Film Transistor - It is an object to provide a method for manufacturing a thin film transistor, in which the number of masks to be used is small. A thin film transistor is manufactured as follows: a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked; a resist mask having a recessed portion is formed thereover with the use of a multi-tone mask; a thin-film stack body is formed with first etching; a gate electrode layer is formed with second etching in which an etched first conductive film is side-etched; and then a source electrode and a drain electrode and the like are formed. A crystalline semiconductor film is used for the semiconductor film. | 09-30-2010 |
20100267179 | Method for Manufacturing Semiconductor Device - A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape. | 10-21-2010 |
20100267216 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first. | 10-21-2010 |
20100301326 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost. | 12-02-2010 |
20100301346 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPLIANCE - A thin film transistor in which an effect of photo current is small and an On/Off ratio is high is provided. In a bottom-gate bottom-contact (coplanar) thin film transistor, a channel formation region overlaps with a gate electrode, a first impurity semiconductor layer is provided between the channel formation region and a second impurity semiconductor layer which is in contact with a wiring layer. A semiconductor layer which serves as the channel formation region and the first impurity semiconductor layer preferably overlap with each other in a region where they overlap with the gate electrode. The first impurity semiconductor layer and the second impurity semiconductor layer preferably overlap with each other in a region where they do not overlap with the gate electrode. | 12-02-2010 |
20100327281 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility. A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current. | 12-30-2010 |
20110014780 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6×10 | 01-20-2011 |
20110020989 | METHOD FOR FORMING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR - A microcrystalline semiconductor film having a high crystallinity is formed. Further, a thin film transistor having preferable electric characteristics and high reliability and a display device including the thin film transistor are manufactured with high mass productivity. A step in which a deposition gas containing silicon or germanium is introduced at a first flow rate and a step in which the deposition gas containing silicon or germanium is introduced at a second flow rate are repeated while hydrogen is introduced at a fixed rate, so that the hydrogen and the deposition gas containing silicon or germanium are mixed, and a high-frequency power is supplied. Therefore, a microcrystalline semiconductor film is formed over a substrate. | 01-27-2011 |
20110076837 | MANUFACTURING METHOD OF SOI SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate. | 03-31-2011 |
20110115763 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained. | 05-19-2011 |
20110117708 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To suppress an effect of metal contamination caused in manufacturing an SOI substrate. After forming a damaged region by irradiating a semiconductor substrate with hydrogen ions, the semiconductor substrate is bonded to a base substrate. Heat treatment is performed to cleave the semiconductor substrate; thus an SOI substrate is manufactured. Even if metal ions enter the semiconductor substrate together with the hydrogen ions in the step of hydrogen ion irradiation, the effect of metal contamination can be suppressed by the gettering process. Accordingly, the irradiation with hydrogen ions can be performed positively by an ion doping method. | 05-19-2011 |
20110121300 | DISPLAY DEVICE - An object is to provide a display device whose frame can be narrowed and whose display characteristics are excellent. The display device includes a driver circuit and a pixel portion. The driver circuit and the pixel portion are formed using a dual-gate thin film transistor and a single-gate thin film transistor, respectively. In the dual-gate thin film transistor in the display device, a semiconductor layer is formed using a microcrystalline semiconductor region and a pair of amorphous semiconductor regions, and a gate insulating layer and an insulating layer are in contact with the microcrystalline semiconductor region of the semiconductor layer. | 05-26-2011 |
20110133196 | SEMICONDUCTOR DEVICE - An object is to provide a highly reliable transistor and a semiconductor device including the transistor. A semiconductor device including a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode over the oxide semiconductor film, in which activation energy of the oxide semiconductor film obtained from temperature dependence of a current (on-state current) flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode is greater than or equal to 0 meV and less than or equal to 25 meV, is provided. | 06-09-2011 |
20110147755 | THIN FILM TRANSISTOR - A thin film transistor having favorable electric characteristics with high productively is provided. The thin film transistor includes a gate insulating layer covering a gate electrode, a semiconductor layer in contact with the gate insulating layer, an impurity semiconductor layer which is in contact with part of the semiconductor layer and functions as a source region and a drain region, and a wiring in contact with the impurity semiconductor layer. The semiconductor layer includes a microcrystalline semiconductor region having a concave-convex shape, which is formed on the gate insulating layer side, and an amorphous semiconductor region in contact with the microcrystalline semiconductor region. A barrier region is provided between the semiconductor layer and the wiring. | 06-23-2011 |
20110163316 | THIN FILM TRANSISTOR AND SEMICONDUCTOR DEVICE - An impurity element imparting one conductivity type is included in a layer close to a gate insulating film of layers with high crystallinity, so that a channel formation region is formed not in a layer with low crystallinity which is formed at the beginning of film formation but in a layer with high crystallinity which is formed later in a microcrystalline semiconductor film. Further, the layer including an impurity element is used as a channel formation region. Furthermore, a layer which does not include an impurity element imparting one conductivity type or a layer which has an impurity element imparting one conductivity type at an extremely lower concentration than other layers, is provided between a pair of semiconductor films including an impurity element functioning as a source region and a drain region and the layer including an impurity element functioning as a channel formation region. | 07-07-2011 |
20110248268 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added. | 10-13-2011 |
20110263060 | Method for Manufacturing Thin Film Transistor and Method for Manufacturing Display Device - An object is to provide a method for manufacturing a thin film transistor and a display device with reduced number of masks, in which adverse effects of optical current are suppressed. A manufacturing method comprises forming a stack including, from bottom to top, a light-blocking film, a base film, a first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film; performing first etching on the whole thickness of the stack using a first resist mask formed over it; forming a gate electrode layer by side etching the first conductive film in a second etching; forming a second resist mask over the stack; and performing third etching down to the semiconductor film, and partially etching it, using the second resist mask to form a source and drain electrode layer, a source and drain region, and a semiconductor layer. | 10-27-2011 |
20110275191 | Method of Manufacturing Semiconductor Device - A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask. | 11-10-2011 |
20110284856 | SEMICONDUCTOR DEVICE - An object is to reduce off-current of a thin film transistor. Another object is to improve electric characteristics of a thin film transistor. Further, it is still another object to improve image quality of a display device using the thin film transistor. An aspect of the present invention is a thin film transistor including a semiconductor film formed over a gate electrode and in an inner region of the gate electrode which does not reach an end portion of the gate electrode, with a gate insulating film interposed therebetween, a film covering at least a side surface of the semiconductor film, and a pair of wirings over the film covering the side surface of the semiconductor film; in which an impurity element serving as a donor is added to the semiconductor film. | 11-24-2011 |
20110300690 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first. | 12-08-2011 |
20110312165 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6×10 | 12-22-2011 |
20110318875 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed. | 12-29-2011 |
20110318908 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS - The present invention is a semiconductor manufacturing apparatus by which an impurity can be introduced into an active layer at a low and a stable concentration in order to form semiconductor elements that have little variation in threshold voltage. In the semiconductor manufacturing apparatus that includes a washing unit; an impurity introduction unit used to attach the impurity to the surface of the semiconductor film; a laser crystallization unit used to crystallize the semiconductor film to which an impurity has been attached; and transfer robots, the amount of the impurity attached to the semiconductor film is controlled by the length of time of exposure of the substrate in the impurity introduction unit, and the semiconductor film is crystallized while a crystalline semiconductor film that contains an impurity at low concentration is formed simultaneously by laser crystallization. | 12-29-2011 |
20120007078 | SEMICONDUCTOR DEVICE - It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10 | 01-12-2012 |
20120058599 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The semiconductor device includes a thin film transistor which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, a source electrode layer and a drain electrode layer over the gate insulating layer, a buffer layer over the source electrode layer and the drain electrode layer, and a semiconductor layer over the buffer layer. A part of the semiconductor layer overlapping with the gate electrode layer is over and in contact with the gate insulating layer and is provided between the source electrode layer and the drain electrode layer. The semiconductor layer is an oxide semiconductor layer containing indium, gallium, and zinc. The buffer layer contains a metal oxide having n-type conductivity. The semiconductor layer and the source and drain electrode layers are electrically connected to each other through the buffer layer. | 03-08-2012 |
20120061668 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced. | 03-15-2012 |
20120104386 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, there occurs a problem that it is difficult to mount an IC chip including a driver circuit for driving the gate and signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. The pixel portion and the driver portion are provided over the same substrate, whereby manufacturing cost can be reduced. | 05-03-2012 |
20120108006 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained. | 05-03-2012 |
20120108007 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained. | 05-03-2012 |
20120132910 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - One of the objects of the present invention is to provide a thin film transistor using an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn), in which the contact resistance between the oxide semiconductor layer and a source and drain electrodes is reduced, and to provide a method for manufacturing the thin film transistor. An ohmic contact is formed by intentionally providing a buffer layer having a higher carrier concentration than the IGZO semiconductor layer between the IGZO semiconductor layer and the source and drain electrode layers. | 05-31-2012 |
20120228607 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost. | 09-13-2012 |
20120248513 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A space is provided under part of a semiconductor layer. Specifically, a structure in which an eaves portion (a projecting portion, an overhang portion) is formed in the semiconductor layer. The eaves portion is formed as follows: a stacked-layer structure in which a conductive layer, an insulating layer, and a semiconductor layer are stacked in this order is etched collectively to determine a pattern of a gate electrode; and a pattern of the semiconductor layer is formed while side-etching is performed. | 10-04-2012 |
20120273779 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film. | 11-01-2012 |
20120273780 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed. | 11-01-2012 |
20130002624 | DISPLAY DEVICE - A display device of which frame can be narrowed and of which display characteristics are excellent is provided. In a display device including a switch portion or a buffer portion, a logic circuit portion, and a pixel portion, the pixel portion includes a first inverted staggered TFT and a pixel electrode which is connected to a wiring of the first inverted staggered TFT, the switch portion or the buffer portion includes a second inverted staggered TFT in which a first insulating layer, a semiconductor layer, and a second insulating layer are interposed between a first gate electrode and a second gate electrode, the logic circuit portion includes an inverter circuit including a third inverted staggered thin film transistor and a fourth inverted staggered thin film transistor, and the first to the fourth inverted staggered thin film transistors have the same polarity. The inverter circuit may be an EDMOS circuit. | 01-03-2013 |
20130095587 | METHODS FOR MANUFACTURING THIN FILM TRANSISTOR AND DISPLAY DEVICE - The present invention provides a method for manufacturing a highly reliable semiconductor device with a small amount of leakage current. In a method for manufacturing a thin film transistor, etching is conducted using a resist mask to form a back channel portion in the thin film transistor, the resist mask is removed, a part of the back channel is etched to remove etching residue and the like left over the back channel portion, whereby leakage current caused by the residue and the like can be reduced. The etching step of the back channel portion can be conducted by dry etching using non-bias. | 04-18-2013 |
20130140557 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed. | 06-06-2013 |
20130244375 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. A metal oxide layer having higher carrier concentration than the semiconductor layer is provided intentionally as the buffer layer between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed. | 09-19-2013 |
20130270525 | THIN FILM TRANSISTOR - A thin film transistor includes a gate insulating layer covering a gate electrode, a semiconductor layer in contact with the gate insulating layer, and impurity semiconductor layers which are in contact with part of the semiconductor layer and which form a source region and a drain region. The semiconductor layer includes a microcrystalline semiconductor layer formed on the gate insulating layer and a microcrystalline semiconductor region containing nitrogen in contact with the microcrystalline semiconductor layer. The thin film transistor in which off-current is small and on-current is large can be manufactured with high productivity. | 10-17-2013 |
20130277671 | SEMICONDUCTOR DEVICE - An object is to provide a highly reliable transistor and a semiconductor device including the transistor. A semiconductor device including a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode over the oxide semiconductor film, in which activation energy of the oxide semiconductor film obtained from temperature dependence of a current (on-state current) flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode is greater than or equal to 0 meV and less than or equal to 25 meV, is provided. | 10-24-2013 |
20130280867 | METHODS FOR MANUFACTURING THIN FILM TRANSISTOR AND DISPLAY DEVICE - The present invention provides a method for manufacturing a highly reliable semiconductor device with a small amount of leakage current. In a method for manufacturing a thin film transistor, etching is conducted using a resist mask to form a back channel portion in the thin film transistor, the resist mask is removed, a part of the back channel is etched to remove etching residue and the like left over the back channel portion, whereby leakage current caused by the residue and the like can be reduced. The etching step of the back channel portion can be conducted by dry etching using non-bias. | 10-24-2013 |
20130334525 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, there occurs a problem that it is difficult to mount an IC chip including a driver circuit for driving the gate and signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver circuit are provided over the same substrate, manufacturing cost can be reduced. | 12-19-2013 |
20140231800 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed. | 08-21-2014 |
20140246669 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost. | 09-04-2014 |
20140329365 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed. | 11-06-2014 |
20150048371 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed. | 02-19-2015 |
20150060850 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film. | 03-05-2015 |
20150069390 | SEMICONDUCTOR DEVICE - An object is to provide a highly reliable transistor and a semiconductor device including the transistor. A semiconductor device including a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode over the oxide semiconductor film, in which activation energy of the oxide semiconductor film obtained from temperature dependence of a current (on-state current) flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode is greater than or equal to 0 meV and less than or equal to 25 meV, is provided. | 03-12-2015 |