Patent application number | Description | Published |
20100029068 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION SYSTEM - A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film. | 02-04-2010 |
20110156042 | THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF - A thin film transistor is provided with a high crystallized region in a channel formation region and a high resistance region between a source and a drain, and thus has a high electric effect mobility and a large on current. The thin film transistor includes an “impurity which suppresses generation of crystal nuclei” contained in the base layer or located on its surface, a first wiring layer over a base layer, an impurity semiconductor layer over the first wiring, a semiconductor layer over the impurity semiconductor layer, the semiconductor layer comprises a crystalline region and a region containing an amorphous phase which is formed adjacent to the base layer. | 06-30-2011 |
20110220905 | SEMICONDUCTOR DEVICE - In an inverted staggered thin film transistor, a microcrystalline silicon film and a silicon carbide film are provided between a gate insulating film and wirings serving as a source wiring and a drain wiring. The microcrystalline silicon film is formed on the gate insulating film side and the silicon carbide film is formed on the wiring side. In such a manner, a semiconductor device having favorable electric characteristics can be manufactured with high productivity. | 09-15-2011 |
20110220907 | SEMICONDUCTOR DEVICE - In an inverted staggered thin film transistor, a microcrystalline silicon film and a pair of silicon carbide films are provided between a gate insulating film and wirings serving as a source wiring and a drain wiring. The microcrystalline silicon film is formed on the gate insulating film side and the pair of silicon carbide films are formed on the wiring side. In such a manner, a semiconductor device having favorable electric characteristics can be manufactured with high productivity. | 09-15-2011 |
20110278582 | METHOD FOR MANUFACTURING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device having favorable electric characteristics with high productivity is provided. A first microcrystalline semiconductor film is formed over an oxide insulating film under a first condition that mixed phase grains with high crystallinity are formed at a low particle density. After that, a second microcrystalline semiconductor film is stacked over the first microcrystalline semiconductor film under a second condition that a space between the mixed phase grains are filled by the crystal growth of the mixed phase grains of the first microcrystalline semiconductor film. | 11-17-2011 |
20110309361 | Photoelectric Conversion Element, Display Device, Electronic Device, and Method for Manufacturing Photoelectric Conversion Element - A photoelectric conversion element includes a first conductive layer over a substrate; a first insulating layer covering the first conductive layer; a first semiconductor layer over the first insulating layer; a second conductive layer formed over the first semiconductor layer; an impurity semiconductor layer over the second semiconductor layer; a second conductive layer over the impurity semiconductor layer; a second insulating layer covering the first semiconductor layer and the second conductive layer; and a light-transmitting third conductive layer over the second insulating layer. A first opening and a second opening are formed in the second insulating layer. In the first opening, the first semiconductor layer is connected to the third conductive layer. In the second opening, the first conductive layer is connected to the third conductive layer. In the first opening, a light-receiving portion surrounded by an electrode formed of the second conductive layer is provided. | 12-22-2011 |
20110318888 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device comprises the steps of forming a seed over the insulating film by introducing hydrogen and a deposition gas into a first treatment chamber under a first condition and forming a microcrystalline semiconductor film over the seed by introducing hydrogen and the deposition gas into a second treatment chamber under a second condition: a second flow rate of the deposition gas is periodically changed between a first value and a second value; and a second pressure in the second treatment chamber is higher than or equal to 1.0×10 | 12-29-2011 |
20120034765 | MANUFACTURING METHOD OF MICROCRYSTALLINE SILICON FILM AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR - An object is to provide a manufacturing method of a microcrystalline silicon film with improved adhesion between an insulating film and the microcrystalline silicon film. The microcrystalline silicon film is formed in the following manner. Over an insulating film, a microcrystalline silicon grain having a height that allows the microcrystalline silicon grain to be completely oxidized by later plasma oxidation (e.g., a height greater than 0 nm and less than or equal to 5 nm), or a microcrystalline silicon film or an amorphous silicon film having a thickness that allows the microcrystalline silicon film or the amorphous silicon film to be completely oxidized by later plasma oxidation (e.g., a thickness greater than 0 nm and less than or equal to 5 nm) is formed. Plasma treatment in an atmosphere including oxygen or plasma oxidation is performed on the microcrystalline silicon grain, the microcrystalline silicon film, or the amorphous silicon film, so that a silicon oxide grain or a silicon oxide film is formed over the insulating film. A microcrystalline silicon film is formed over the silicon oxide grain or the silicon oxide film. | 02-09-2012 |
20120056182 | Semiconductor Device and Manufacturing Method Thereof - A manufacturing method of a semiconductor device having a stacked structure in which a lower layer is exposed is provided without increasing the number of masks. A source electrode layer and a drain electrode layer are formed by forming a conductive film to have a two-layer structure, forming an etching mask thereover, etching the conductive film using the etching mask, and performing side-etching on an upper layer of the conductive film in a state where the etching mask is left so that part of a lower layer is exposed. The thus formed source and drain electrode layers and a pixel electrode layer are connected in a portion of the exposed lower layer. In the conductive film, the lower layer and the upper layer may be a Ti layer and an Al layer, respectively. The plurality of openings may be provided in the etching mask. | 03-08-2012 |
20120061676 | THIN FILM TRANSISTOR - A highly reliable transistor in which change in electrical characteristics is suppressed is provided. A highly reliable transistor in which change in electrical characteristics is suppressed is manufactured with high productivity. A display device with less image deterioration over time is provided. An inverted staggered thin film transistor which includes, between a gate insulating film and impurity semiconductor films functioning as source and drain regions, a semiconductor stacked body including a microcrystalline semiconductor region and a pair of amorphous semiconductor regions. In the microcrystalline semiconductor region, the nitrogen concentration on the gate insulating film side is low and the nitrogen concentration in a region in contact with the amorphous semiconductor is high. Further, an interface with the amorphous semiconductor has unevenness. | 03-15-2012 |
20120064677 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a method for manufacturing a semiconductor device with fewer masks and in a simple process. A gate electrode is formed. A gate insulating film, a semiconductor film, an impurity semiconductor film, and a conductive film are stacked in this order, covering the gate electrode. A source electrode and a drain electrode are formed by processing the conductive film. A source region, a drain region, and a semiconductor layer, an upper part of a portion of which does not overlap with the source region and the drain region is removed, are formed by processing the upper part of the semiconductor film, while the impurity semiconductor film is divided. A passivation film over the gate insulating film, the semiconductor layer, the source region, the drain region, the source electrode, and the drain electrode are formed. An etching mask is formed over the passivation film. At least the passivation film and the semiconductor layer are processed to have an island shape while an opening reaching the source electrode or the drain electrode is formed, with the use of the etching mask. The etching mask is removed. A pixel electrode is formed over the gate insulating film and the passivation film. | 03-15-2012 |
20120097963 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel foaming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated. | 04-26-2012 |
20120099293 | Backlight Unit, Display Device, and Electronic Device - A novel structure of a backlight unit where color-scan backlight drive is performed and a color mixture problem can be reduced is proposed. In the backlight unit where color-scan backlight drive is performed, in order not to form a color mixture region by light from a light source, an optical system is provided between the light source and a diffuser sheet so that the light is isotropically spread. Specifically, the distribution of intensity of light in the minor-axis direction is narrowed by the optical system provided between the light source and the diffuser sheet. The distribution of intensity of light in the major-axis direction is made uniform by the optical system. Further, the spread of light from the light source in the minor-axis direction in which a color mixture region is formed is suppressed and luminance on a light-emitting surface in the major-axis direction is made uniform. | 04-26-2012 |
20120100309 | PLASMA TREATMENT APPARATUS AND PLASMA CVD APPARATUS - A plasma treatment apparatus includes a treatment chamber covered with a chamber wall, where an upper electrode faces a lower electrode; and a line chamber separated from the treatment chamber by the upper electrode and an insulator, covered with the chamber wall, and connected to a first gas diffusion chamber between a dispersion plate and a shower plate. The first gas diffusion chamber is connected to a second gas diffusion chamber between the dispersion plate and the upper electrode. The second gas diffusion chamber is connected to a first gas pipe in the upper electrode. The upper electrode and the chamber wall are provided on the same axis. The dispersion plate includes a center portion with no gas hole and a peripheral portion with plural gas holes. The center portion faces a gas introduction port of the first gas pipe, connected to an electrode plane of the upper electrode. | 04-26-2012 |
20120100675 | MANUFACTURING METHOD OF MICROCRYSTALLINE SILICON FILM AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a manufacturing method of a microcrystalline silicon film having both high crystallinity and high film density. In the manufacturing method of a microcrystalline silicon film according to the present invention, a first microcrystalline silicon film that includes mixed phase grains is formed over an insulating film under a first condition, and a second microcrystalline silicon film is formed thereover under a second condition. The first condition and the second condition are a condition in which a deposition gas containing silicon and a gas containing hydrogen are used as a first source gas and a second source gas. The first source gas is supplied under the first condition in such a manner that supply of a first gas and supply of a second gas are alternately performed. | 04-26-2012 |
20120115285 | METHOD FOR FORMING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A seed crystal which includes mixed phase grains including an amorphous silicon region and a crystallite which is a microcrystal that can be regarded as a single crystal is formed on an insulating film by a plasma CVD method under a first condition that enables mixed phase grains having high crystallinity and high uniformity of grain sizes to be formed at a low density, and then a microcrystalline semiconductor film is formed to be stacked on the seed crystal by a plasma CVD method under a second condition that enables the mixed phase grains to grow to fill a space between the mixed phase grains. | 05-10-2012 |
20120120677 | Backlight Unit and Display Device - The novel structure of a backlight unit using color-scan backlight drive which structure can relieve the color mixture problem is provided. A backlight unit including: a light guide plate including (j+1) (j is a natural number) reflective walls that are columns having height in a direction perpendicular to a bottom face and being extended in one direction parallel to the bottom face and that are provided in parallel; an r-th columnar transparent layer provided in a region sandwiched between an r-th (r is a natural number, 1≦r≦j) reflective wall and an (r+1)-th reflective wall of the (j+1) reflective walls; and an r-th light source provided on a side surface of the light guide plate to let light into the r-th transparent layer. | 05-17-2012 |
20120162283 | DRIVING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE - Input of image signals to part of a plurality of pixels included in a particular region of a pixel portion and supply of light to part of another plurality of pixels which is different from the part are performed concurrently. Therefore, it is not necessary to provide a period in which light is supplied to all of the plurality of pixels included in the region after the image signals are input thereto. In other words, it is possible to start input of the next image signals to all of the plurality of pixels included in the region just after the image signals are input thereto. Accordingly, it is possible to increase the input frequency of the image signals. As a result, it is possible to suppress deteriorations of display caused in the field-sequential liquid crystal display device. | 06-28-2012 |
20120229724 | LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE - A horizontal electric field mode liquid crystal display device having a novel electrode structure, and a manufacturing method thereof are provided. The liquid crystal display device includes a first substrate having an insulating surface; a first conductive film and a second conductive film over the insulating surface; a first insulating film over the first conductive film; a second insulating film over the second conductive film; a second substrate facing the first substrate; and a liquid crystal layer positioned between the first substrate and the second substrate. Part of the first conductive film exists also on a side portion of the first insulating film, and part of the second conductive film exists also on a side portion of the second insulating film. The liquid crystal layer includes liquid crystal exhibiting a blue phase. | 09-13-2012 |
20120229747 | LIQUID CRYSTAL DISPLAY DEVICE - Provided are a liquid crystal display device with horizontal electric field mode, in which a decrease in driving speed can be suppressed by reducing the resistance of a wiring even when the number of pixels is increased, and a manufacturing method thereof. One of a scan wiring and a signal wiring is divided in an intersection portion where the scan wiring and the signal wiring intersect with each other, and the separated wirings are connected with a connection electrode positioned over a thick insulating film. Accordingly, parasitic capacitance at the intersection portion can be reduced, preventing the decrease in the driving speed. The connection electrode is formed at the same time as formation of a pixel electrode and a common electrode using a low-resistance metal, which contributes to the reduction in manufacturing process of the liquid crystal display device. | 09-13-2012 |
20120262940 | Light Guide Element, Backlight Unit, and Display Device - An object is to provide a novel structure of a backlight unit using color-scan backlight drive, which can relieve a color mixture problem. A backlight unit including a plurality of light guide elements is used. The light guide element has a shape extended in the x direction. The light guide element has a shape of rectangular column. Grooves are provided on a bottom surface of the light guide element so as to traverse it in the y direction. Light sources are provided at the ends of the light guide element in the x direction to supply light into the light guide element. Light supplied into the light guide element is reflected by the grooves in the z direction, and emitted to the outside of the light guide element through the top surface. A reflective layer may be provided under the bottom surface of the light guide element. | 10-18-2012 |
20120270383 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA OXIDATION TREATMENT METHOD - Provided is a method for manufacturing a semiconductor device, in which a degradation of characteristics of a thin film transistor can be suppressed by performing plasma oxidation treatment on a gate insulating film containing nitrogen. An embodiment of the present invention is a method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitrogen, and a channel region in microcrystalline semiconductor films. The method includes the steps of performing plasma treatment on the gate insulating film in an oxidizing gas atmosphere containing hydrogen and an oxidizing gas containing an oxygen atom, and forming the microcrystalline semiconductor film over the gate insulating film. Formula (1), a/b≧2, and Formula (2), b>0, are satisfied, where the amount of hydrogen and the amount of the oxidizing gas in the oxidizing gas atmosphere are a and b, respectively. | 10-25-2012 |
20120298997 | SEMICONDUCTOR DEVICE - One embodiment of the present invention is a semiconductor device which includes a gate electrode; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed over the gate insulating film and placed above the gate electrode; a second insulating film formed over the semiconductor layer; a first insulating film formed over a top surface and a side surface of the second insulating film, a side surface of the semiconductor layer, and the gate insulating film; silicon layers and which are formed over the first insulating film and electrically connected to the semiconductor layer; and a source electrode and a drain electrode which are formed over the silicon layers. The source electrode and the drain electrode are electrically separated from each other over the first insulating film. The semiconductor layer is not in contact with each of the source electrode and the drain electrode. | 11-29-2012 |
20120298999 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to reduce off-state leakage current between a source electrode and a drain electrode. One embodiment of the present invention is a semiconductor device including a gate electrode, gate insulating films and formed to cover the gate electrode, an active layer formed over the gate insulating films and located above the gate electrode, silicon layers and formed over side surfaces of the active layer and the gate insulating films, and a source electrode and a drain electrode formed over the silicon layers. The active layer is not in contact with each of the source electrode and the drain electrode. | 11-29-2012 |
20120299006 | SEMICONDUCTOR DEVICE - An object is to prevent light leakage caused due to misregistration even when the width of a black matrix layer is not expanded to a designed value or larger. One embodiment of the present invention is a semiconductor device including a single-gate thin film transistor in which a first semiconductor layer is sandwiched between a bottom-gate electrode and a first black matrix layer. The first semiconductor layer and the first black matrix layer overlap with each other. | 11-29-2012 |
20120299074 | SEMICONDUCTOR DEVICE - A semiconductor device in which light leakage due to misalignment is prevented even when a black matrix layer is not expanded to a designed value or more is provided. In a semiconductor device including a dual-gate thin film transistor in which a semiconductor layer is sandwiched between a bottom gate electrode and a top gate electrode, the top gate electrode is formed of a first black matrix layer, and the top gate electrode overlaps with the semiconductor layer. | 11-29-2012 |
20130056742 | MICROCRYSTALLINE SILICON FILM, MANUFACTURING METHOD THEREOF, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF - A manufacturing method of a microcrystalline silicon film includes the steps of forming a first microcrystalline silicon film over an insulating film by a plasma CVD method under a first condition; and forming a second microcrystalline silicon film over the first microcrystalline silicon film under a second condition. As a source gas supplied to a treatment chamber, a deposition gas containing silicon and a gas containing hydrogen are used. In the first condition, a flow rate of hydrogen is set at a flow rate 50 to 1000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 67 to 1333 Pa inclusive. In the second condition, a flow rate of hydrogen is set at a flow rate 100 to 2000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 1333 to 13332 Pa inclusive. | 03-07-2013 |
20130095582 | Method for Manufacturing Sealed Structure - A method for manufacturing a sealed structure in which few cracks are generated is provided. Scan with the laser beam is performed so that there is no difference in an irradiation period between the middle portion and the perimeter portion of the glass layer and so that the scanning direction is substantially parallel to the direction in which solidification of the glass layer after melting proceeds. More specifically, in a region where the beam spot is overlapped with the glass layer, scan is performed with a laser beam having a beam spot shape whose width in a scanning direction is substantially uniform. Further, as a laser beam with which the glass layer is irradiated, a laser beam (a linear laser beam) having a linear beam spot shape with a major axis and a minor axis which is orthogonal to the major axis. | 04-18-2013 |
20130101754 | Method of Heating Dispersion Composition and Method of Forming Glass Pattern - Provided are a method of heating a composition which is applicable to a substrate provided with a material having low heat resistance and a method of forming a glass pattern which leads to reduction of cracks. A composition formed over a substrate is irradiated with a laser beam to bake the paste through local heating. Scan with the laser beam is, performed so that there can be no difference in the laser beam irradiation period between the middle portion and the perimeter portion of the composition. Specifically, irradiation with the laser beam is performed so that the width of the beam spot overlapping with the composition in the scanning direction is substantially uniform. | 04-25-2013 |
20140113440 | LASER IRRADIATION METHOD AND LASER IRRADIATION DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented. | 04-24-2014 |
20140217413 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To reduce parasitic capacitance between a gate electrode and a source electrode or drain electrode of a dual-gate transistor. A semiconductor device includes a first insulating layer covering a first conductive layer; a first semiconductor layer, second semiconductor layers, and an impurity semiconductor layer sequentially provided over the first insulating layer; a second conductive layer over and at least partially in contact with the impurity semiconductor layer; a second insulating layer over the second conductive layer; a third insulating layer covering the three semiconductor layers, the second conductive layer, and the second insulating layer; and a third conductive layer over the third insulating layer. The third conductive layer overlaps with a portion of the first semiconductor layer, which does not overlap with the second semiconductor layers, and further overlaps with part of the second conductive layer. | 08-07-2014 |