Patent application number | Description | Published |
20080305569 | Semiconductor Device and a Method of Manufacturing the Same - A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained. | 12-11-2008 |
20100035424 | Semiconductor Device and Fabrication Method Thereof - A hydrogenation method that utilizes plasma directly exposes a crystalline semiconductor film to the plasma, and therefore involves the problem that the crystalline semiconductor film is damaged by the ions generated simultaneously in the plasma. If a substrate is heated to 400° C. or above to recover this damage, hydrogen is re-emitted from the crystalline semiconductor film. | 02-11-2010 |
20110101367 | Semiconductor Device and A Method of Manufacturing the Same - A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable III can be obtained. | 05-05-2011 |
20130001582 | Semiconductor Device and A Method of Manufacturing the Same - A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained. | 01-03-2013 |
20130005094 | Semiconductor Device and A Method of Manufacturing the Same - A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained. | 01-03-2013 |
20140209916 | Semiconductor Device and A Method of Manufacturing the Same - A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained. | 07-31-2014 |
Patent application number | Description | Published |
20100110320 | DISPLAY DEVICE SUBSTRATE, DISPLAY DEVICE, AND WIRING SUBSTRATE - The present invention provides a display device substrate, a display device, and a wiring substrate, each permitting more flexible wiring design and a reduction in area of wirings with suppressing wiring defects. | 05-06-2010 |
20100117155 | SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - The present invention provides a semiconductor device including thin film transistors that have different characteristics on the same substrate and that have high performance and high reliability and a production method thereof. | 05-13-2010 |
20120075270 | LIQUID CRYSTAL DISPLAY DEVICE - Provided is a liquid crystal display device that can reduce the power supply voltage and the power consumption of the liquid crystal display device. A liquid crystal display device according to the present invention is a reflective liquid crystal display device having a built-in pixel memory. In a thin film transistor | 03-29-2012 |
20120115286 | THIN-FILM TRANSISTOR PRODUCING METHOD - Provided is a thin film transistor manufacture method by which a thin film transistor provided with LDD regions can be produced without increasing the number of photo masks used. An etching stopper layer ( | 05-10-2012 |
20120242624 | THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME, SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME, AS WELL AS DISPLAY - An object of the present invention is to provide a thin film transistor fabricating method including a simplified step of forming contact holes. This method involves previously removing a gate insulating film ( | 09-27-2012 |
20120256184 | SEMICONDUCTOR DEVICE, ACTIVE MATRIX SUBSTRATE AND DISPLAY DEVICE - A switching element (a semiconductor device) ( | 10-11-2012 |
20120320004 | SEMICONDUCTOR DEVICE, ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE - A switching circuit (semiconductor device) ( | 12-20-2012 |
20140138678 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device ( | 05-22-2014 |
Patent application number | Description | Published |
20100090223 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode. | 04-15-2010 |
20110254068 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode. | 10-20-2011 |
20120001244 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREFOR - In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film. | 01-05-2012 |
20120199840 | SEMICONDUCTOR DEVICE HAVING A PIXEL MATRIX CIRCUIT THAT INCLUDES A PIXEL TFT AND A STORAGE CAPACITOR - In a CMOS circuit formed on a substrate | 08-09-2012 |
20150014691 | SEMICONDUCTOR DEVICE COMPRISING A SECOND ORGANIC FILM OVER A THIRD INSULATING FILM WHEREIN THE SECOND ORGANIC FILM OVERLAPS WITH A CHANNEL FORMATION REGION AND A SECOND CONDUCTIVE FILM - In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film. | 01-15-2015 |
Patent application number | Description | Published |
20110193816 | CAPACITANCE CHANGE DETECTING CIRCUIT - In at least one embodiment, when a surface of a liquid crystal panel is pressed, the capacitance value of a variable capacitor changes. One electrode of the variable capacitor is connected to a voltage supply line to which a common voltage is applied, and the other electrode of the variable capacitor is connected to a gate electrode of a TFT. The TFT outputs a voltage generated according to the capacitance value of the variable capacitor. Another TFT is provided between a control voltage line to which a control voltage is applied and the gate electrode of the TFT. A gate electrode of the other TFT is connected to a row selection line. By providing the other TFT, a desired voltage is applied to the gate electrode of the TFT, whereby charge accumulated on the electrode is dissipated, enabling to prevent circuit malfunction. By reducing the load capacitance of the control voltage line, a change in capacitance can be detected with a high sensitivity. By this, a capacitance change detecting circuit is provided that can detect a change in capacitance with a high sensitivity without malfunction. | 08-11-2011 |
20110199329 | CAPACITANCE CHANGE DETECTING CIRCUIT - When a surface of a liquid crystal panel is pressed, the capacitance value of a variable capacitor changes. In at least one embodiment, one electrode of the variable capacitor is connected to a voltage supply line to which a common voltage is applied, and the other electrode of the variable capacitor is connected to a gate electrode of a TFT. The TFT outputs a voltage generated according to the capacitance value of the variable capacitor. One electrode of a control capacitor is connected to the gate electrode of the TFT, and the other electrode of the control capacitor is connected to a control voltage line to which a control voltage is applied. By applying a control voltage to the gate electrode of the TFT through the control capacitor, while the load capacitance of the control voltage line is reduced and a change in capacitance is detected with a high sensitivity, the sensitivity can be adjusted according to the application, person, etc., when used. By this, a capacitance change detecting circuit is provided that can detect a change in capacitance with a high sensitivity and can control the sensitivity when used. | 08-18-2011 |
20120146038 | SEMICONDUCTOR DEVICE, ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE - Provided are a semiconductor device that can achieve leakage current reduction irrespective of an ambient temperature, an active matrix substrate in which such a semiconductor device is used, and a display device. In a switching portion (semiconductor device) ( | 06-14-2012 |
20120146043 | SEMICONDUCTOR DEVICE, ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE - Provided are a semiconductor device that can be fabricated easily and can achieve leakage current reduction, without its structure becoming complex or the device becoming bulky; an active matrix substrate in which the device is used; and a display device in which the device is used. A switching portion ( | 06-14-2012 |
20130334530 | THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE - The invention provides a thin film transistor that can reduce an off-current flowing in end-parts in a channel width direction of a channel layer and a manufacturing method therefor. | 12-19-2013 |
20140035478 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE - The invention provides a thin film transistor having current driving force that can be substantially improved. By heat treatment, the IGZO layer ( | 02-06-2014 |