Patent application number | Description | Published |
20100006549 | DEVICE FOR PROCESSING MATERIALS BY LASER BEAM - Disclosed is a laser processing device for processing a surface of an object with laser beams. The laser processing device includes: a laser beam generating unit for projecting laser beams; and a micromirror device having a plurality of micromirrors, the micromirrors being configured to reflect and transfer at least a part of laser beams projected from the laser beam generating unit to the surface of the object in a pattern for processing the surface of the object in a desired shape. The micromirrors of the micromirror device are capable of selectively switching the light path of the laser beams projected from the laser beam generating unit. According to the present invention, a surface of an object can be either two-dimensionally or three-dimensionally processed in a desired shape with laser beams. | 01-14-2010 |
20100277745 | Method for Measuring Thickness - Disclosed is a method for measuring a thickness of a subjecting layer attacked on a base layer by means of an interferometer, which includes the steps of: obtaining a correlation equation of a phase difference with respect to thicknesses of sample layers, the thicknesses being different from each other, the sample layers being made from a material substantially equal to a material of the subjecting layer; obtaining a first interference signal with respect to an optical axial direction incident to the base layer at a boundary surface between an air layer and the base layer; obtaining a second interference signal with respect to the optical axial direction at a boundary surface between the subjecting layer and the base layer; obtaining a phase difference between a phase of the first interference signal and a phase of the second interference signal at respective heights substantially equal to each other with respect to the optical axial direction; and determining a thickness of the subjecting layer by inserting the phase difference into the correlation equation. | 11-04-2010 |
20110001988 | Apparatus for Measuring Thickness - An apparatus for measuring a thickness, which includes: a first beam splitter for reflecting or transmitting a ray irradiated from an optical source or a ray reflected by a measurement object; a first lens part which condenses a ray to the measurement object and generates a reference ray having a difference of a light path in comparison with a ray reflected by the measurement object; a second lens part for condensing a ray to the object to be measured; an interference light detector which corresponds to at the first lens part so as to form a light path and detects an interference signal generated by the ray reflected by the measurement object and the reference ray; a spectroscopic detector which corresponds to the second lens part so as to form a light path different from the light path formed by the interference light detector and splits the ray reflected by the measurement object so as to detect an intensity and a wavelength of each split ray; and a light path converter for selectively transmitting a ray to one of the interference light detector and the spectroscopic detector, wherein position exchanging is performed between the first lens part and the second lens part. | 01-06-2011 |
20110188048 | Method for Measuring Thickness or Surface Profile - Disclosed is a method of measuring thickness or a surface profile of a thin film layer formed on a base layer through a white light scanning interferometry, the method including: preparing simulation interference signals corresponding to thicknesses by assuming a plurality of sample thin film layers different in thickness from one another and simulating interference signals with respect to the respective sample thin film layers; acquiring a real interference signal with respect to an optical-axis direction of entering the thin film layer by illuminating the thin film layer with white light; preparing a plurality of estimated thicknesses that the thin film layer may have on the basis of the real interference signal; comparing whether the simulation interference signal having thickness corresponding to the estimated thickness is substantially matched with the real interference signal; and determining the thickness of the simulation interference signal substantially matched with the real interference signal as the thickness of the thin film layer. | 08-04-2011 |
20140036273 | Interferometer for TSV Measurement and Measurement Method Using Same - Provided herein is a TSV measuring interferometer that uses a variable field stop that adjusts such that a light is focused at an inlet and at a bottom surface of a TSV when measuring a diameter and depth of the TSV, thereby reducing a measurement time and result data, the interferometer also using a telecentric lens that adjusts the light injected into the TSV to be a straight line, so as to obtain a sufficient amount of light reaching the bottom surface to improve the accuracy of measurement even in a TSV having a large aspect ratio. | 02-06-2014 |
Patent application number | Description | Published |
20100029019 | DETECTING MATERIALS ON WAFER AND REPAIR SYSTEM AND METHOD THEREOF - Disclosed is a system and a method for detecting and repairing alien materials on a semiconductor wafer. The system includes a transfer arm for transferring and aligning a wafer, an inspection unit, on which the wafer is seated, and which obtains an image of the wafer surface, an analysis module for analyzing the alien material appearing in the image obtained by the inspection unit, and a repair unit for repairing the alien material according to information regarding the analyzed alien material. The simple construction of the system and method for detecting and repairing alien materials on a wafer reduces the manufacturing cost, avoids the loss of manufacturing cost, and increases the semiconductor chip yield ratio. | 02-04-2010 |
20110013015 | VISION INSPECTION SYSTEM AND INSPECTION METHOD USING THE SAME - A vision inspection system for inspecting an inspection object of various types, and an inspection method of inspecting an inspection object using the vision inspection system are disclosed. The vision inspection system comprises a work-piece stage having a table on which an inspection object is placed, a plurality of linescan cameras, and a computer configured to process a scanned image of the inspection object. A plurality of markings, each of which has a marking stage coordinate value, are provided on an upper surface of the table such that the linescan cameras can obtain scanned images of the markings. Each two neighboring markings are placed in a field of view of each of the linescan cameras. The markings between the first and the last markings are respectively placed in such a way as to overlap within the fields of view of each two neighboring linescan cameras. The inspection method calculates a work-piece image-stage coordinate value using a marking image coordinate value and a work-piece image coordinate value, and determines the inspection object as being non-defective when the work-piece image-stage coordinate value falls within an allowable tolerance range with respect to the work-piece stage coordinate value. | 01-20-2011 |
20110043794 | Dark-Field Examination Device - The present invention relates to a dark-field examination device. The dark-field examination device according to the present invention is characterized in that it comprises: an illumination unit for irradiating light towards an examination object on a base; a reflection unit for reflecting, back towards the examination object, incident light which has been reflected by means of the examination object or incident light which has passed through the base; and an imaging unit for imaging the examination object by receiving light which has been scattered by means of the examination object, and in that the illumination unit, the reflection unit and the imaging unit are arranged in such a way that part of the light which has been irradiated from the illumination unit is scattered by means of the examination object and falls incident upon the imaging unit while another part of the light which has been irradiated from the illumination unit falls incident upon the reflection unit, and the light reflected back towards the examination object by means of the reflection unit is scattered by means of the examination object and falls incident upon the imaging unit. | 02-24-2011 |
20110279670 | Apparatus for Measuring Three-Dimensional Profile Using LCD - Provided is an apparatus for measuring a three-dimensional profile using a LCD in which a sine wave pattern is formed on a measurement object, whereby image information of the measurement object is obtained using the sine wave pattern and a camera, and the image information is analyzed to measure a profile of the measurement object, the apparatus including a LCD projector including: a light source irradiating light forward; a LCD panel disposed at a front side of the light source, generating a sine wave pattern having a plurality of phases and a plurality of periods; polarization plates respectively disposed on front and rear sides of the LCD panel; a first focusing lens disposed apart from a front side of the LCD panel, focusing the sine wave pattern generated by the LCD panel on the measurement object; and a housing supporting the light source, the LCD panel, the polarization plates and the first focusing lens. | 11-17-2011 |