Patent application number | Description | Published |
20130120737 | APPARATUS AND METHOD TO MEASURE TEMPERATURE OF 3D SEMICONDUCTOR STRUCTURES VIA LASER DIFFRACTION - Embodiments of the present invention generally relate to apparatus for and methods of measuring and monitoring the temperature of a substrate having a | 05-16-2013 |
20140034632 | APPARATUS AND METHOD FOR SELECTIVE OXIDATION AT LOWER TEMPERATURE USING REMOTE PLASMA SOURCE - Devices and methods for selectively oxidizing silicon are described herein. An apparatus for selective oxidation of exposed silicon surfaces includes a thermal processing chamber with a plurality of walls, first inlet connection and a second inlet connection, wherein the walls define a processing region within the processing chamber, a substrate support within the processing chamber, a hydrogen source connected with the first inlet connection, a heat source connected with the hydrogen source, and a remote plasma source connected with the second inlet connection and an oxygen source. A method for selective oxidation of non-metal surfaces, can include positioning a substrate in a processing chamber at a temperature less than 800° C., flowing hydrogen into the processing chamber, generating a remote plasma comprising oxygen, mixing the remote plasma with the hydrogen gas in the processing chamber to create an activated processing gas, and exposing the substrate to the activated gas. | 02-06-2014 |
20140113458 | MINIMAL CONTACT EDGE RING FOR RAPID THERMAL PROCESSING - Embodiments of the disclosure generally relate to a support ring that supports a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring connecting to an outer perimeter of the inner ring through a flat portion, an edge lip extending radially inwardly from an inner perimeter of the inner ring to form a supporting ledge, and a substrate support extending upwardly from a top surface of the edge lip. The substrate support may be a continuous ring-shaped body disposed around a circumference of the edge lip. The substrate support supports a substrate about its entire periphery from the back side with minimized contact surface to thermally disconnect the substrate from the edge lip. Particularly, the substrate support provides a substantial line contact with the back surface of the substrate. | 04-24-2014 |
20140265101 | MINIMAL CONTACT EDGE RING FOR RAPID THERMAL PROCESSING - Embodiments of the present invention generally relate to a support ring for supporting a substrate during thermal processing in a process chamber. The support ring generally includes a ring body, an outer rib extending from a first surface of the ring body, a midrib extending from the first surface of the ring body, and a substrate support extending from a second surface of the ring body. The support ring reduces thermal coupling between a substrate and the support ring. | 09-18-2014 |
20140273530 | Post-Deposition Treatment Methods For Silicon Nitride - Provided are methods post deposition treatment of films comprising SiN. Certain methods pertain to providing a film comprising SiN; and exposing the film to an inductively coupled plasma, capacitively coupled plasma or a microwave plasma to provide a treated film with a modulated film stress and/or wet etch rate in dilute HF. Certain other methods comprise depositing a PEALD SiN film followed by exposure to a plasma nitridation process or a UV treatment to provide a treated film. | 09-18-2014 |
20140273539 | METHODS FOR CONFORMAL TREATMENT OF DIELECTRIC FILMS WITH LOW THERMAL BUDGET - Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds. | 09-18-2014 |
20140302686 | Apparatus and Method for Conformal Treatment of Dielectric Films Using Inductively Coupled Plasma - Disclosed are apparatus and methods for processing a substrate. The substrate having a feature with a layer thereon is exposed to an inductively coupled plasma which forms a substantially conformal layer. | 10-09-2014 |
20150020736 | SUBSTRATE SUPPORT RING FOR MORE UNIFORM LAYER THICKNESS - Embodiments of substrate support rings providing more uniform thickness of layers deposited or grown on a substrate are provided herein. In some embodiments, a substrate support ring includes: an inner ring with a centrally located support surface to support a substrate; and an outer ring extending radially outward from the support surface, wherein the outer ring comprises a reaction surface area disposed above and generally parallel to a support plane of the support surface, and wherein the reaction surface extends beyond the support surface by about 24 mm to about 45 mm. | 01-22-2015 |