Patent application number | Description | Published |
20100221906 | ENHANCING INTEGRITY OF A HIGH-K GATE STACK BY CONFINING A METAL CAP LAYER AFTER DEPOSITION - During a manufacturing sequence for forming a sophisticated high-k metal gate structure, a cover layer, such as a silicon layer, may be deposited on a metal cap layer in an in situ process in order to enhance integrity of the metal cap layer. The cover layer may provide superior integrity during the further processing, for instance in view of performing wet chemical cleaning processes and the subsequent deposition of a silicon gate material. | 09-02-2010 |
20100244141 | THRESHOLD ADJUSTMENT OF TRANSISTORS INCLUDING HIGH-K METAL GATE ELECTRODE STRUCTURES COMPRISING AN INTERMEDIATE ETCH STOP LAYER - During the formation of sophisticated gate electrode structures, a replacement gate approach may be applied in which plasma assisted etch processes may be avoided. To this end, one of the gate electrode structures may receive an intermediate etch stop liner, which may allow the replacement of the placeholder material and the adjustment of the work function in a later manufacturing stage. The intermediate etch stop liner may not negatively affect the gate patterning sequence. | 09-30-2010 |
20100301427 | WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES BY SELECTIVELY REMOVING A BARRIER LAYER - In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be formed with superior uniformity, while the efficiency of the subsequent adjusting of the work function may also be increased. Thus, superior uniformity, i.e., less pronounced transistor variability, may be accomplished on the basis of a replacement gate approach in which the work function of the gate electrodes of P-channel transistors and N-channel transistors is adjusted after completing the basic transistor configuration. | 12-02-2010 |
20100330790 | TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE APPROACH BY MODIFYING A REMOVAL RATE OF STRESSED DIELECTRIC OVERLAYERS - In a replacement gate approach, the sacrificial gate material is exposed on the basis of enhanced process uniformity, for instance during a wet chemical etch step or a CMP process, by forming a modified portion in the interlayer dielectric material by ion implantation. Consequently, the damaged portion may be removed with an increased removal rate while avoiding the creation of polymer contaminants when applying an etch process or avoiding over-polish time when applying a CMP process. | 12-30-2010 |
20110073963 | SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY CORNER ROUNDING PRIOR TO COMPLETELY REMOVING A PLACEHOLDER MATERIAL - In a replacement gate approach, a superior cross-sectional shape of the gate opening may be achieved by performing a material erosion process in an intermediate state of removing the placeholder material. Consequently, the remaining portion of the placeholder material may efficiently protect the underlying sensitive materials, such as a high-k dielectric material, when performing the corner rounding process sequence. | 03-31-2011 |
20110101470 | HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL OF PLACEHOLDER MATERIALS IN TRANSISTORS OF DIFFERENT CONDUCTIVITY TYPE - In a replacement gate approach, a superior cross-sectional shape of the gate opening may be achieved by performing a material erosion process in an intermediate state of removing the placeholder material. Consequently, the remaining portion of the placeholder material may efficiently protect the underlying sensitive materials, such as a high-k dielectric material, when performing the corner rounding process sequence. | 05-05-2011 |
20110127590 | INCREASING STABILITY OF A HIGH-K GATE DIELECTRIC OF A HIGH-K GATE STACK BY AN OXYGEN RICH TITANIUM NITRIDE CAP LAYER - In a replacement gate approach, the oxygen contents of a cap material may be increased, thereby providing more stable characteristics of the cap material itself and of the high-k dielectric material. Consequently, upon providing a work function adjusting metal species at a very advanced manufacturing stage, corresponding additional treatments may be reduced in number or may even be completely avoided, while at the same time threshold voltage variations may be reduced. | 06-02-2011 |
20110127613 | HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL OF PLACEHOLDER MATERIALS USING A MASKING REGIME PRIOR TO GATE PATTERNING - In a replacement gate approach in sophisticated semiconductor devices, the place-holder material of gate electrode structures of different type are separately removed. Furthermore, electrode metal may be selectively formed in the resulting gate opening, thereby providing superior process conditions in adjusting a respective work function of gate electrode structures of different type. In one illustrative embodiment, the separate forming of gate openings in gate electrode structures of different type may be based on a mask material that is provided in a gate layer stack. | 06-02-2011 |
20110266633 | Semiconductor Device Comprising Metal Gates and Semiconductor Resistors Formed on the Basis of a Replacement Gate Approach - In a replacement gate approach, the semiconductor material or at least a significant portion thereof in a non-transistor structure, such as a precision resistor, an electronic fuse and the like, may be preserved upon replacing the semiconductor material in the gate electrode structures. To this end, an appropriate dielectric material may be provided at least prior to the removal of the semiconductor material in the gate electrode structures, without requiring significant modifications of established replacement gate approaches. | 11-03-2011 |
20120238086 | REDUCING EQUIVALENT THICKNESS OF HIGH-K DIELECTRICS IN FIELD EFFECT TRANSISTORS BY PERFORMING A LOW TEMPERATURE ANNEAL - When forming sophisticated high-k metal gate electrode structures, for instance on the basis of a replacement gate approach, superior interface characteristics may be obtained on the basis of using a thermally grown base material, wherein the electrically effective thickness may be reduced on the basis of a low temperature anneal process. Consequently, the superior interface characteristics of a thermally grown base material may be provided without requiring high temperature anneal processes, as are typically applied in conventional strategies using a very thin oxide layer formed on the basis of a wet oxidation chemistry. | 09-20-2012 |
20120261765 | HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL OF PLACEHOLDER MATERIALS USING A MASKING REGIME PRIOR TO GATE PATTERNING - In a replacement gate approach in sophisticated semiconductor devices, the placeholder material of gate electrode structures of different type are separately removed. Furthermore, electrode metal may be selectively formed in the resulting gate opening, thereby providing superior process conditions in adjusting a respective work function of gate electrode structures of different type. In one illustrative embodiment, the separate forming of gate openings in gate electrode structures of different type may be based on a mask material that is provided in a gate layer stack. | 10-18-2012 |
20120282764 | TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE APPROACH BY MODIFYING A REMOVAL RATE OF STRESSED DIELECTRIC OVERLAYERS - In a replacement gate approach, the sacrificial gate material is exposed on the basis of enhanced process uniformity, for instance during a wet chemical etch step or a CMP process, by forming a modified portion in the interlayer dielectric material by ion implantation. Consequently, the damaged portion may be removed with an increased removal rate while avoiding the creation of polymer contaminants when applying an etch process or avoiding over-polish time when applying a CMP process. | 11-08-2012 |
20120315749 | Metal Gate Stack Formation for Replacement Gate Technology - Generally, the subject matter disclosed herein relates to modern sophisticated semiconductor devices and methods for forming the same, wherein a reduced threshold voltage (V | 12-13-2012 |
20120319205 | HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY REDUCING A GATE FILL ASPECT RATIO IN REPLACEMENT GATE TECHNOLOGY - When forming sophisticated high-k metal gate electrode structures on the basis of a replacement gate approach, the fill conditions upon filling in the highly conductive electrode metal, such as aluminum, may be enhanced by removing an upper portion of the final work function metal, for instance a titanium nitride material in P-channel transistors. In some illustrative embodiments, the selective removal of the metal-containing electrode material in an upper portion of the gate opening may be accomplished without unduly increasing overall process complexity. | 12-20-2012 |
20130017679 | WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES BY SELECTIVELY REMOVING A BARRIER LAYER - Generally, the present disclosure is directed work function adjustment in high-k metal gate electrode structures. In one illustrative embodiment, a method is disclosed that includes removing a placeholder material of a first gate electrode structure and a second gate electrode structure, and forming a first work function adjusting material layer in the first and second gate electrode structures, wherein the first work function adjusting material layer includes a tantalum nitride layer. The method further includes removing a portion of the first work function adjusting material layer from the second gate electrode structure by using the tantalum nitride layer as an etch stop layer, removing the tantalum nitride layer by performing a wet chemical etch process, and forming a second work function adjusting material layer in the second gate electrode structure and above a non-removed portion of the first work function adjusting material layer in the first gate electrode structure. | 01-17-2013 |
20130109166 | METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH CONTROLLED P-CHANNEL THRESHOLD VOLTAGE | 05-02-2013 |
20130168773 | High-K Metal Gate Electrode Structure Formed by Removing a Work Function on Sidewalls in Replacement Gate Technology - When forming sophisticated high-k metal gate electrode structures on the basis of a replacement gate approach, the fill conditions upon filling in the highly conductive electrode metal, such as aluminum, may be enhanced by removing the final work function metal, for instance a titanium nitride material in P-channel transistors, only preserving a well-defined bottom layer. | 07-04-2013 |
20130217221 | DRY ETCH POLYSILICON REMOVAL FOR REPLACEMENT GATES - Semiconductor devices are formed with a gate last, high-K/metal gate process with complete removal of the polysilicon dummy gate and with a gap having a low aspect ratio for the metal fill. Embodiments include forming a dummy gate electrode on a substrate, the dummy gate electrode having a nitride cap, forming spacers adjacent opposite sides of the dummy gate electrode forming a gate trench therebetween, dry etching the nitride cap, tapering the gate trench top corners; performing a selective dry etch on a portion of the dummy gate electrode, and wet etching the remainder of the dummy gate electrode. | 08-22-2013 |
20130273729 | HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL OF PLACEHOLDER MATERIALS IN TRANSISTORS OF DIFFERENT CONDUCTIVITY TYPE - In a replacement gate approach, a superior cross-sectional shape of the gate opening may be achieved by performing a material erosion process in an intermediate state of removing the placeholder material. Consequently, the remaining portion of the placeholder material may efficiently protect the underlying sensitive materials, such as a high-k dielectric material, when performing the corner rounding process sequence. | 10-17-2013 |
20130302974 | REPLACEMENT GATE ELECTRODE FILL AT REDUCED TEMPERATURES - Generally, the present disclosure is directed to forming conductive metal fill materials in replacement gate electrodes using reduced deposition temperatures. One illustrative method disclosed herein includes, among other things, forming a sacrificial gate structure above a semiconductor layer, the sacrificial gate structure including a dummy gate electrode, and forming a gate cavity by removing at least the dummy gate electrode from above the semiconductor layer. The disclosed method further includes forming a work-function material of a replacement metal gate electrode in the gate cavity, and forming a conductive metal fill material in the gate cavity and above the work-function material, wherein forming the conductive metal fill material includes performing a material deposition process at a temperature below approximately 450° C. | 11-14-2013 |