Patent application number | Description | Published |
20080197441 | SEMICONDUCTOR COMPONENT WITH VERTICAL STRUCTURES HAVING A HIGH ASPECT RATIO AND METHOD - A semiconductor component with vertical structures having a high aspect ratio and method. In one embodiment, a drift zone is arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone in a first direction. A dielectric layer is arranged between the drift zone and the drift control zone wherein the drift zone has a varying doping and/or a varying material composition at least in sections proceeding from the dielectric. | 08-21-2008 |
20090130806 | POWER SEMICONDUCTOR COMPONENT WITH CHARGE COMPENSATION STRUCTURE AND METHOD FOR THE FABRICATION THEREOF - A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones. | 05-21-2009 |
20090230535 | SEMICONDUCTOR MODULE - A semiconductor module. In one embodiment, at least two semiconductor chips are placed on a carrier. The at least two semiconductor chips are then covered with a molding material. An exposed portion of the at least two semiconductor chips is provided. A first layer of conductive material is applied over the exposed portion of the at least two semiconductor chips to electrically connect to a contact pad on the exposed portion of the at least two semiconductor chips. The at least two semiconductor chips are singulated. | 09-17-2009 |
20090261468 | SEMICONDUCTOR MODULE - A semiconductor module. One embodiment provides at least two semiconductor chips placed on a carrier. The at least two semiconductor chips are then covered with a molding material to form a molded body. The molded body is thinned until the at least two semiconductor chips are exposed. Then, the carrier is removed from the at least two semiconductor chips. The at least two semiconductor chips are singulated. | 10-22-2009 |
20090298270 | METHOD FOR PRODUCING A SEMICONDUCTOR - A method for producing a semiconductor is disclosed. One embodiment provides a p-doped semiconductor body having a first side and a second side. An n-doped zone is formed in the semiconductor body by implantation of protons into the semiconductor body via the first side down to a specific depth of the semiconductor body and by subsequent heating at least of the proton-implanted region of the semiconductor body. A pn junction arises in the semiconductor body. The second side of the semiconductor body is removed at least as far as a space charge zone spanned at the pn junction. | 12-03-2009 |
20090305486 | METHOD FOR PRODUCING A SEMICONDUCTOR LAYER - A method for producing a semiconductor layer is disclosed. One embodiment provides for a semiconductor layer on a semiconductor substrate containing oxygen. Crystal defects are produced at least in a near-surface region of the semiconductor substrate. A thermal process is carried out wherein the oxygen is taken up at the crystal defects. The semiconductor layer is deposited epitaxially over the near-surface region of the semiconductor substrate. | 12-10-2009 |
20100210091 | METHOD FOR PRODUCING A SEMICONDUCTOR - A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction. | 08-19-2010 |
20100264523 | Panel, Semiconductor Device and Method for the Production Thereof - A panel has a baseplate with an upper first metallic layer and a multiplicity of a vertical semiconductor components. The vertical semiconductor components in each case have a first side with a first load electrode and a control electrode and an opposite second side with a second load electrode. The second side of the semiconductor components is in each case mounted on the metallic layer of the baseplate. The semiconductor components are arranged in such a way that edge sides of adjacent semiconductor components are separated from one another. A second metallic layer is arranged in separating regions between the semiconductor components. | 10-21-2010 |
20110042791 | METHOD FOR TREATING AN OXYGEN-CONTAINING SEMICONDUCTOR WAFER, AND SEMICONDUCTOR COMPONENT - A method for treating an oxygen-containing semiconductor wafer, and semiconductor component. One embodiment provides a first side, a second side opposite the first side. A first semiconductor region adjoins the first side. A second semiconductor region adjoins the second side. The second side of the wafer is irridated such that lattice vacancies arise in the second semiconductor region. A first thermal process is carried out the duration of which is chosen such that oxygen agglomerates form in the second semiconductor region and that lattice vacancies diffuse from the first semiconductor region into the second semiconductor region. | 02-24-2011 |
20130049176 | METHOD FOR PRODUCING A SEMICONDUCTOR - A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction. | 02-28-2013 |
20130330908 | SEMICONDUCTOR COMPONENT WITH VERTICAL STRUCTURES HAVING A HIGH ASPECT RATIO AND METHOD - A semiconductor component with vertical structures having a high aspect ratio and method. In one embodiment, a drift zone is arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone in a first direction. A dielectric layer is arranged between the drift zone and the drift control zone wherein the drift zone has a varying doping and/or a varying material composition at least in sections proceeding from the dielectric. | 12-12-2013 |
20140061863 | METHOD FOR PRODUCING A SEMICONDUCTOR LAYER - A method for producing a semiconductor layer is disclosed. One embodiment provides for a semiconductor layer on a semiconductor substrate containing oxygen. Crystal defects are produced at least in a near-surface region of the semiconductor substrate. A thermal process is carried out wherein the oxygen is taken up at the crystal defects. The semiconductor layer is deposited epitaxially over the near-surface region of the semiconductor substrate. | 03-06-2014 |
20140073110 | METHOD FOR FABRICATING A TRENCH STRUCTURE, AND A SEMICONDUCTOR ARRANGEMENT COMPRISING A TRENCH STRUCTURE - A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure. | 03-13-2014 |