Patent application number | Description | Published |
20130299846 | GROUP 13 NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF ITS MANUFACTURE - Disclosed is a semiconductor device comprising a substrate ( | 11-14-2013 |
20130320400 | HETEROJUNCTION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed. | 12-05-2013 |
20140167064 | GaN HEMTs AND GaN DIODES - A GaN hetereojunction structure has a three-layer dielectric structure. The lowermost and middle portions of the gate electrode together define the gate foot, and this is associated with two dielectric layers. A thinner first dielectric layer is adjacent the gate edge at the bottom of the gate electrode. The second dielectric layer corresponds to the layer in the conventional structure, and it is level with the main portion of the gate foot. | 06-19-2014 |
20140306232 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - Disclosed is a semiconductor device comprising at least one active layer ( | 10-16-2014 |
20140366641 | FLOW SENSOR - Flow sensors for measuring the flow of an ion-containing fluid may be implemented using mechanical or electrical techniques. Mechanical flow sensors are have moving parts and therefore may be unreliable after some time and are expensive to manufacture. Hall-effect type flow sensors typically require a reversible magnetic field to compensate for electrochemical effects. A flow meter including such a sensor uses an electromagnet. A flow sensor ( | 12-18-2014 |