Heiji
Heiji Enomoto, Sendai-Shi JP
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20090088589 | PROCESS FOR PRODUCTION OF LACTIC ACID AND EQUIPMENT FOR THE PRODUCTION - A process for producing lactic acid according to the invention is characterized in that glycerin is subjected to a hydrothermal reaction under an alkaline condition at a temperature in the range of 150 to 400° C. and under pressure equal to or more than the saturated vapor pressure at the temperature. The glycerin produced from plant fats, animal fats or the like or pure product synthesized chemically or a discharge containing glycerin generated at the production of diesel fuel oil from fats, in which the fats are subjected to a transesterification with alcohol in the presence of an alkali catalyst in order to obtain fatty acid ester is preferably used as a starting material. | 04-02-2009 |
20100047140 | APPARATUS FOR PRODUCING LACTIC ACID - An apparatus for producing lactic acid according to the invention comprises a reactor carrying out: subjecting glycerin to a hydrothermal reaction under an alkaline condition, supplying an alkaline solution comprising glycerin; and continuously producing lactic acid, wherein glycerin is subjected to a hydrothermal reaction under an alkaline condition at a temperature in the range of 150 to 400° C. and under pressure equal to or more than the saturated vapor pressure at the temperature. The glycerin produced from plant fats, animal fats or the like or pure product synthesized chemically or a discharge containing glycerin generated at the production of diesel fuel oil from fats, in which the fats are subjected to a transesterification with alcohol in the presence of an alkali catalyst in order to obtain fatty acid ester is preferably used as a starting material. | 02-25-2010 |
Heiji Kobayashi, Hsinchu City TW
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20120015494 | METHOD FOR FABRICATING BOTTOM ELECTRODE OF CAPACITORS OF DRAM - A method for manufacturing a capacitor bottom electrode of a dynamic random access memory is provided. The method comprises providing a substrate having a memory cell region and forming a polysilicon template layer on the memory cell region of the substrate. A supporting layer is formed on the polysilicon template layer and plural openings penetrating through the supporting layer and the polysilicon template layer are formed and a liner layer is formed on at least a portion of the polysilicon template layer exposed by the openings A conductive layer substantially conformal to the substrate is formed on the substrate. A portion of the conductive layer on the supporting layer is removed so as to form plural capacitor bottom electrodes. Using the polysilicon template layer, the openings with relatively better profiles are formed and the dimension of the device can be decreased. | 01-19-2012 |
20120018801 | VERTICAL CHANNEL TRANSISTOR ARRAY AND MANUFACTURING METHOD THEREOF - A vertical channel transistor array has an active region formed by a plurality of semiconductor pillars. A plurality of embedded bit lines are arranged in parallel in a semiconductor substrate and extended along a column direction. A plurality of bit line contacts are respectively disposed on a side of one of the embedded bit lines. A plurality of embedded word lines are arranged in parallel above the embedded bit lines and extended along a row direction. Besides, the embedded word lines connect the semiconductor pillars in the same row with a gate dielectric layer sandwiched between the embedded word lines and the semiconductor pillars. The current leakage isolation structure is disposed at terminals of the embedded bit lines to prevent current leakage between the adjacent bit line contacts. | 01-26-2012 |
20130130471 | MANUFACTURING METHOD OF VERTICAL CHANNEL TRANSISTOR ARRAY - A vertical channel transistor array has an active region formed by a plurality of semiconductor pillars. A plurality of embedded bit lines are arranged in parallel in a semiconductor substrate and extended along a column direction. A plurality of bit line contacts are respectively disposed on a side of one of the embedded bit lines. A plurality of embedded word lines are arranged in parallel above the embedded bit lines and extended along a row direction. Besides, the embedded word lines connect the semiconductor pillars in the same row with a gate dielectric layer sandwiched between the embedded word lines and the semiconductor pillars. The current leakage isolation structure is disposed at terminals of the embedded bit lines to prevent current leakage between the adjacent bit line contacts. | 05-23-2013 |
Heiji Kobayashi, Tokyo JP
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20100190306 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CAPABLE OF SUPPRESSING IMPURITY CONCENTRATION REDUCTION IN DOPED CHANNEL REGION ARISING FROM FORMATION OF GATE INSULATING FILM - A method of manufacturing a semiconductor device is provided that can suppress impurity concentration reduction in a doped channel region arising from formation of a gate insulating film. With a silicon oxide film and a silicon nitride film being formed, p-type impurity ions are implanted in a Y direction from diagonally above. As for an implant angle α of the ion implantation, an implant angle is adopted that satisfies the relationship tan | 07-29-2010 |
Heiji Maruyama, Shizuoka JP
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20130230185 | SOUND GENERATING DEVICE FOR VEHICLE, AND SOUND GENERATING METHOD FOR VEHICLE - Provided is a sound generating device ( | 09-05-2013 |
20150092957 | VEHICLE SOUND GENERATION APPARATUS, AND VEHICLE SOUND GENERATION METHOD - A vehicle sound generation apparatus | 04-02-2015 |
Heiji Watanabe, Suita-Shi, Osaka JP
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20150318372 | SEMICONDUCTOR DEVICE - A semiconductor device according to the present invention has a MIS structure that includes a semiconductor layer, a gate insulating film in contact with the semiconductor layer, and a gate electrode formed on the gate insulating film, and the gate insulating film includes an AlON layer with a nitrogen composition of 5% to 40%. A semiconductor device is thereby provided with which electron trapping in the gate insulating film can be reduced and shifting of a threshold voltage V | 11-05-2015 |
Heiji Watanabe, Suita-Shi JP
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20080305597 | SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF - The object of the present invention is to provide a method of manufacturing high permittivity gate dielectrics for a device such as an MOSFET. A HfSiO film | 12-11-2008 |
20090170300 | SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF - The object of the present invention is to provide a method of manufacturing high permittivity gate dielectrics for a device such as an MOSFET. A HfSiO film | 07-02-2009 |
20150034971 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - [Problem] To provide an SiC semiconductor device, with which stabilization of high-temperature operation can be achieved by decreasing mobile ions in a gate insulating film, and a method for manufacturing the SiC semiconductor device. | 02-05-2015 |
Heiji Watanabe, Minato-Ku JP
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20120181632 | SEMICONDUCTOR DEVICE AND ITS MANUFACUTURING METHOD - A semiconductor device having, on a silicon substrate, a gate insulating film and a gate electrode in this order; wherein the gate insulating film comprises a nitrogen containing high-dielectric-constant insulating film which has a structure in which nitrogen is introduced into metal oxide or metal silicate; and the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film has a distribution in the direction of the film thickness; and a position at which the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film reaches the maximum in the direction of the film thickness is present in a region at a distance from the silicon substrate. A method of manufacturing a semiconductor device including introducing nitrogen by irradiating the high-dielectric-constant insulating film which is made of metal oxide or metal silicate, with a nitrogen containing plasma, is also provided. | 07-19-2012 |
Heiji Watanabe, Mino-Shi JP
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20120223338 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon carbide substrate, annealing the silicon carbide substrate and the silicon oxide film in gas containing hydrogen, and forming an aluminum oxynitride film on the silicon oxide film after the annealing of the silicon carbide substrate and the silicon oxide film. | 09-06-2012 |