Patent application number | Description | Published |
20120164484 | MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER INCLUDING MAIN SPACER LAYER CONTAINING GALLIUM OXIDE AND NONMAGNETIC LAYER - A magnetoresistive effect element (MR element) includes first and second magnetic layers of which relative angles formed by magnetization directions change in relation to an external magnetic field; and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned on a side closer than the second magnetic layer in regards to a substrate above which the magnetoresistive effect element is formed, and the spacer layer includes a main spacer layer made of gallium oxide as the primary component, and a first nonmagnetic layer positioned between the main spacer layer and the first magnetic layer and contains copper and gallium. | 06-28-2012 |
20120196153 | MAGNETO-RESISTIVE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC HEAD SLIDER, HEAD GIMBAL ASSEMBLY AND HARD DISK DRIVE APPARATUS - An MR element includes a stack, being a pillar or trapezoidal stack, including first and second magnetic layers in which a relative angle formed by magnetization directions changes according to an external magnetic field, and a spacer layer that is positioned between the first magnetic layer and the second magnetic layer, and that is provided with a main spacer layer that is composed of gallium oxide, zinc oxide or magnesium oxide as a primary component, wherein, one part of side surfaces of the stack forms a part of an air bearing surface; and a cover layer that covers at least another part of the side surfaces of the stack and that is composed of gallium oxide as a primary component. | 08-02-2012 |
20120212859 | MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER INCLUDING MAIN SPACER LAYER CONTAINING GALLIUM OXIDE AND METAL INTERMEDIATE LAYER - A magneto-resistive effect (MR) element includes first and second magnetic layers in which a relative angle formed by magnetization directions changes in response to an external magnetic field, and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes a copper layer, a metal intermediate layer and a main spacer layer composed of gallium oxide as a primary component. The copper layer and the metal intermediate layer are positioned between the main spacer layer and the first magnetic layer. The metal intermediate layer is positioned between the copper layer and the main spacer layer. The metal intermediate layer is composed of at least one member selected from a group consisting of one of magnesium and at least partially oxidized magnesium, one of aluminum and at least partially oxidized aluminum, and one of zinc and at least partially oxidized zinc, as a primary component. | 08-23-2012 |
20120212860 | MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER INCLUDING GALLIUM OXIDE LAYER WITH METAL ELEMENT - A magneto-resistive effect (MR) element includes: first and second magnetic layers in which a relative angle formed by magnetization directions changes according to an external magnetic field; and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer includes a main spacer layer composed of gallium oxide as a primary component and containing at least one metal element selected from a group of magnesium, zinc, indium and aluminum. | 08-23-2012 |
20120214020 | MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER WITH THIN CENTRAL PORTION - A magneto-resistive effect (MR) element includes first and second magnetic layers in which a relative angle formed by magnetization directions changes in response to an external magnetic field, and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer, on an air bearing surface, has a larger film thickness at both side edge parts in a track width direction than a film thickness at a central part in a track width direction. When a region of the spacer layer on the air bearing surface is divided into quarters which are both side edge part regions and two central regions such that track width direction lengths are equivalent, an average film thickness of a region where the both side edge regions are combined is preferably larger than a region where the two central regions are combined. | 08-23-2012 |
20120237796 | MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER CONTAINING GALLIUM OXIDE, PARTIALLY OXIDIZED COPPER - A magneto-resistive effect (MR) element includes first and second magnetic layers where a relative angle formed by magnetization directions changes in response to an external magnetic field and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes a main spacer layer that is composed of gallium oxide as a primary component and a bottom layer that is positioned between the main spacer layer and the first magnetic layer and that is composed of partially oxidized copper as a primary component. | 09-20-2012 |
20120250472 | MAGNETIC HEAD FOR MICROWAVE ASSISTED MAGNETIC RECORDING - A magnetic head that writes information to a recording medium includes a magnetic pole layer that generates a writing magnetic field to the recording medium, a microstripline that is disposed in proximity to the magnetic pole layer and to which high frequency current is applied, and a ferromagnetic thin film that is disposed on a portion of the microstripline that faces the recording medium, and that generates a high frequency alternate-current (AC) magnetic field to be applied to the recording medium, using a current magnetic field generated on the microstripline due to the high frequency current. | 10-04-2012 |
20130258524 | SPIN CONDUCTION ELEMENT AND MAGNETIC SENSOR AND MAGNETIC HEAD USING SPIN CONDUCTION - A spin conduction element includes a main channel layer having a first electrode, a second electrode, a third electrode, a fourth electrode, a fifth electrode, and a sixth electrode, and extending in a first direction. Spins are injected into the main channel layer from a second ferromagnetic layer constituting the second electrode and a fourth ferromagnetic layer constituting the fourth electrode, and a spin current is detected as a voltage in a third ferromagnetic layer constituting the third electrode. | 10-03-2013 |